SiC_W含量对SiC_W/Si_3N_4复合陶瓷力学及高温微波性能影响

以α-Si_3N_4粉、β-SiC_W为原料,Al_2O_3、Y_2O_3为烧结助剂,采用凝胶注模工艺制备了SiC_W/Si_3N_4复合陶瓷材料,烧结温度为1 650℃,保温1.5h。研究了SiC_W加入含量对SiC_W/Si_3N_4复合陶瓷的微观结构、力学及常温/高温微波吸收性能的影响。结果表明:随着SiC_W含量的增加,SiC_W/Si_3N_4复合陶瓷的抗弯强度和断裂韧性都有先増后减的趋势,当含量为10wt%时,抗弯强度达到最大值505MPa,断裂韧性达9.515MPa·m1/2。常温介电常数在SiC_W含量为10wt%时,实部达最大值12,在12GHz最大吸收值为-21dB。高温介电常数随着SiC_W含量的增加有先增后减的趋势,在含量为10wt%时,实部达到最大值12.5。相比于纯Si_3N_4陶瓷,当SiC_W含量为10wt%时,SiC_W/Si_3N_4复合陶瓷在11.7GHz左右最大吸收可达-27dB,有效吸收频带(小于-5dB)为11.2~12.3GHz。     

Si/C/N纳米粉体的吸波特性研究

采用ＸＲＤ研究了氮原子百分含量为１１．６１%的Ｓｉ/Ｃ/Ｎ纳米粉体的相组成,并测定了粉体介电常数根据介电常数,分别优化设计了单层和双层的吸波徐层,设计的吸波涂层对８~１８ＧＨｚ范围的电磁波有较好的吸收作用．设计厚度为２．７ｍｍ的单层吸波涂层,在８~１５ＧＨｚ范围内反射率＜－５ｄＢ设计厚度为２．８ｍｍ的双层吸波涂层,在８~１８ＧＨｚ频率范围内电磁波的反射率均＜－５ｄＢ,反射率＜－８ｄＢ的频带为６ＧＨｚ．针对纳米粉体的吸波特性,提出了Ｓｉ/Ｃ/Ｎ纳米粉体的吸波机理．     

用聚碳硅烷为先驱体制备SiC/Si3N4纳米复相陶瓷

采用聚碳硅烷(PCS) 为先驱体, 利用原位生长法制备SiC/Si₃N₄ 纳米复相陶瓷, 其室温弯曲强度和断裂韧性达到了637M Pa 和8. 10M Pa·m1/2 。研究了材料微观结构的形成及断裂机理,指出在微观结构的形成过程中, 控制SiC 纳米微晶的生成和B-Si₃N₄ 柱状晶的生长是关键, 而增韧补强的主要原因在于形成了晶内型结构和长径比大(大于7. 5) 的Si₃N₄ 柱状晶, 从而改变了断裂机理。      

纳米SiC纤维改性短切碳纤维增强Si_3N_4陶瓷介电响应及吸波性能

以甲基三氯硅烷为原料,采用催化化学气相沉积(CCVD)工艺在短切碳纤维(C_(fd))表面制备了纳米SiC纤维(nano SiC_f)改性层,并采用凝胶注模-无压烧结工艺制备了nano SiC_f-C_(fd)/Si_3N_4和C_(fd)/Si_3N_4复合材料。使用矢量网络分析仪研究了nano SiC_f-C_(fd)和C_(fd)对Si_3N_4陶瓷在X波段(8.2~12.4GHz)的介电响应和吸波性能的影响。结果表明:nano SiC_f-C_(fd)/Si_3N_4和C_(fd)/Si_3N_4复合材料的复介电常数和介电损耗角正切值(tanδ)均随纤维添加量增加而增大;相同纤维含量时,nano SiC_f-C_(fd)/Si_3N_4复合材料的介电常数实部比C_(fd)/Si_3N_4复合材料有所降低,但损耗角正切升高。反射损耗结果表明:nano SiC_f-C_(fd)/Si_3N_4复合材料拥有更优的电磁波吸收效果。nano SiC_f-C_(fd)含量为2wt%、d=2.5mm时,出现最大吸收峰-14.95dB,反射损耗优于-5dB,波段频宽达3.5GHz。nano SiC_f界面改性能有效提高C_(fd)/Si_3N_4复合材料的吸波性能。     

Al2O3填料对SiCf/BN/SiC复合材料弯曲强度和高温吸波性能的影响

用有机先驱体浸渍裂解(PIP)法制备SiC_f/BN/SiC复合材料,研究了微米Al₂O₃粉体对其弯曲强度、高温介电和高温吸波性能的影响。结果表明,随着Al₂O₃的含量从5%提高到20%,SiC_f/BN/SiC的弯曲强度呈现出先升高后降低的趋势,最大值达到295 MPa;随着温度的升高复合材料复介电常数的实部和虚部均逐渐增大,加入Al₂O₃填料能降低高温复介电常数及其随温度增大的幅度。无填料复合材料的室温和高温吸波性能均较差,而添加20% Al₂O₃的复合材料在8.2~12.4 GHz频段的室温反射损耗均低于-8 dB,且适用厚度为3.0~3.5 mm,700℃时厚度为3.0 mm的反射损耗为-5~-8 dB,在实际工程应用中具有较强的可设计性。     

纳米Si/C/N复相粉体的微波吸收特性

采用双反应室激光气相合成纳米粉体装置,以六甲基二硅胺烷((Me₃Si)₂NH)(Me:CH₃)为原料合成了纳米Si/C/N复相粉体,粒径为20 nm~30 nm。研究了纳米Si/C/N复相粉体在8.2 GHz~18 GHz的微波吸收特性,结果表明:纳米Si/C/N复相粉体介电常数的实部(ε')和虚部(ε″)在8.2 GHz~18 GHz随频率增大而减小,介电损耗(tgδ=ε″/ε ')较高,是较为理想的微波吸收材料;纳米Si/C/N复相粉体在不同基体中的微波吸收特性出现很大差异。纳米Si/C/N复相粉体中的SiC微晶固溶了大量的N原子,形成大量带电缺陷,极化弛豫是吸收微波的主要原因。根据纳米Si/C/N复相粉体与石蜡复合体的实测介电参数,设计出多组在8 GHz~18 GHz范围内微波反射系数R≤-8dB的吸波涂层结构。     

Characteristics evaluation of SiC/Si nanocomposites produced by spark plasma sintering

SiC–Si composites are widely used either as a bulk material or as a matrix for fibre reinforced ceramics. In the current research, nanocomposites of SiC–Si with different volume fractions of Si were sintered by spark plasma sintering (SPS) for the first time. The effect of Si content and different sintering parameters on relative density, microstructure, hardness and fracture toughness of the sintered materials have been investigated. The relative density increased from about 83 to 99% by increasing the sintering temperature to 1700°C, sintering time to 10?min, and pressure to 70?MPa for composites containing >20?vol.-% Si. The results revealed that the full dense SiC–20?vol.-%Si composite can be obtained by SPS at 1700°C, 10?min and 70?MPa. Moreover, in this condition, the hardness and toughness of the composites reached the optimum values.     

Dielectric property of Cu powder/polymer composites

Dielectric property of Cu/polymer thermoplastic composites was measured in high frequencies up to 1 GHz. Generally relative permittivity and dielectric loss of the composites increased as the increasing metal inclusion loading as the percolation theory predicts. The incorporation of the copper inclusion with surface antirust layer raised relative permittivity of the composite from 2.3 to 21.3 at the loading level of 39.3 vol. % at 500 MHz. When copper oxide layer was introduced to the filler surface, estimated increase of relative permittivity was ca. 25 %. Since metal composites with ordered structure would raise the relative permittivity of the composites, the cause of this increase in relative permittivity in the present study can be attributable to reduced compatibility of the filler surface and the polymer matrix which lowers randomness of particle distribution. On the other hand, dielectric loss of the composite with surface oxidized Cu powder was increased by ca. 50 % compared to that of the anti-rusted powder composite. This would be caused by skin effect that part of the induced current flows through the less conductive surface oxide layer.     

凝胶注模成型制备纳米复合多孔氮化硅陶瓷

采用凝胶注模成型两步法烧结工艺,利用纳米碳粉增强,成功地制备出了具有高强度、结构比较均匀并有较高气孔率的氮化硅多孔陶瓷。借助X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能谱(EDS)、Archimedes法和三点弯曲法等方法对多孔氮化硅陶瓷的微观结构和基本力学性能进行了研究。结果表明:在适当工艺条件下可制成平均强度>100 MPa、气孔率>60%的多孔氮化硅陶瓷。SEM照片显示气孔是由长柱状β-Si₃N₄晶搭接而成的,气孔分布均匀。XRD图谱显示有SiC生成。发育良好的柱晶结构、均匀的气孔分布以及反应生成的SiC微晶是获得高性能的主要原因。      

静电纺制备Fe3O4/PEK-C纳米复合膜及其吸波性能

静电纺丝技术是一种新颖、高效且简单的制备连续纳米纤维的方法,纳米复合纤维膜的优异特点赋予了纳米吸波剂新的吸波通道。本文采用静电纺丝工艺制备Fe3O4/PEK-C纳米复合纤维膜,利用SEM和TGA表征纳米复合纤维膜的微观形貌和热稳定性,用矢量网络分析仪测试样品在8.2~12.4 GHz的电磁参数与吸波性能。结果表明,Fe3O4/PEK-C纳米复合纤维膜呈现出超细纤维彼此交织构成的立体网络结构,其热稳定性、复介电常数和复磁导率均随着Fe3O4含量的增加而增加,介电损耗和磁损耗得到加强。当纳米复合纤维膜的厚度为1.8 mm时,其反射损耗在整个测试波段均处于-5 dB以下,-10 dB以下有效吸收频宽为2 GHz,频率在8.6 GHz处吸收强度达到最大值-15.4 dB。预期可作为隐身复合材料的吸波功能层。     

SINCO陶瓷粉末吸波性的初步研究

对ＳＩＮＣＯ粉末的吸波性作了初步研究。对以氯硅烷为单体合成的聚硅氮烷，经裂解、球磨制得的黑色粉末进行了红外、相分析、元素分析及吸波性测试，并通过发迹单体配比，发迹粉末中Ｃ元素的含量，探究粉末吸波性的变化。实验结果表明，黑色粉末为硅的氮碳氧复合化合物，预相的ＳＩＮＣＯ陶瓷存在；ＳＩＮＣＯ粉末在３８．０￣３９．５ＧＨｚ高频带表现出较好吸波性，衰减大于１０ｄＢ；ＳＩＮＣＯ粉末与Ｆｅ３Ｏ４按一定比例复配后     

无压烧结Ti3SiC2/铝基复合材料组织与性能

MAX相具有独特的层状晶体结构,不但具备常用铝基复合材料外加陶瓷颗粒的性能特征,同时具有可与石墨媲美的摩擦性能.本文以Al粉、Si粉和典型MAX相Ti_3SiC_2为原料,采用冷压成型-无压烧结方法制备了Ti_3SiC_2/Al-Si复合材料,并通过金相显微镜、X射线衍射仪(XRD)、扫描电镜(SEM)、能谱仪(EDS)等分析手段,研究了烧结温度、Si元素含量对复合材料组织与性能的影响.研究表明:随着烧结温度从500℃提高到700℃,复合材料致密度先上升后下降,摩擦系数先降低后上升,硬度逐渐增大至最大值并基本保持稳定;随着Si质量分数从0增加到20.7%,复合材料的致密度逐渐降低,硬度逐渐增大,摩擦系数先降低后增大,晶粒尺寸随之下降,12.5%Si晶粒最为细小;烧结温度为650℃,Si元素质量分数为12.5%的铝基复合材料具有最低的摩擦系数0.18,相应的硬度为62 HV,致密度为92.12%.XRD物相和扫描电镜组织分析表明,复合材料的主要相组成为Al、Ti_3SiC_2,及由界面反应产生的Al_4C_3和Al的氧化产物Al_2O_3.     

A low-firing microwave dielectric material in Li2O-ZnO-Nb2O5 system

LiZnNbO₄ ceramic was fabricated by the conventional solid state reaction method and its microwave dielectric properties were reported for the first time. The phase structure, microstructure, and sintering behavior were also investigated. The LiZnNbO₄ ceramic could be well densified at around 950 °C and demonstrated high performance microwave dielectric properties with a low relative permittivity ~ 14.6, a high quality factor (resonant frequency/dielectric loss) ~ 47, 200 GHz (at 8.7 GHz), and a negative temperature coefficient of resonant frequency approzmiately −64.5 ppm/°C. The LiZnNbO₄ ceramic is chemically compatible with Ag electrode material at its sintering temperature. It can be a promising microwave dielectric material for low-temperature co-fired ceramic technology.     

三维碳化硅纳米线增强碳化硅陶瓷基复合材料的电磁屏蔽性能

碳化硅纳米线具有优异的电磁吸收性能, 三维网络结构可以更好地使电磁波在空间内被多次反射和吸收。通过抽滤的方法制备得到体积分数20%交错排列的碳化硅纳米线网络预制体。然后采用化学气相渗透工艺制备热解炭界面和碳化硅基体, 并通过化学气相渗透和前驱体浸渍热解工艺得到致密的SiCNWs/SiC陶瓷基复合材料。甲烷和三氯甲基硅烷分别是热解炭和碳化硅的前驱体, 随着热解碳质量分数从21.3%增加到29.5%, 多孔SiCNWs预制体电磁屏蔽效率均值在8~12 GHz (X)波段从9.2 dB增加到64.1 dB。质量增重13%的热解碳界面修饰的SiCNWs/SiC陶瓷基复合材料在X波段平均电磁屏蔽效率达到37.8 dB电磁屏蔽性能。结果显示, SiCNWs/SiC陶瓷基复合材料在新一代军事电磁屏蔽材料中具有潜在应用前景。     

熔盐辅助合成Dy3Si2C2包裹SiC粉体及其陶瓷的烧结行为

碳化硅陶瓷因自身优良的物理化学性能而具有广泛的应用前景.碳化硅的化学键结合特性决定了其难以烧结成型,因此如何制备高质量碳化硅陶瓷是领域内的难点之一.本研究以三元稀土碳化物Dy3Si2C2作为新型SiC陶瓷的烧结助剂,依据Dy-Si-C体系的高温相转变原位促进碳化硅的烧结致密化.采用放电等离子烧结技术,利用金属Dy与Si...     

Processing of Al/SiC composites in continuous solid–liquid co-existent state by SPS and their thermal properties

Silicon carbide (SiC)-particle-dispersed-aluminum (Al) matrix composites were fabricated in a unique fabrication method, where the powder mixture of SiC, pure Al and Al–5mass% Si alloy was uniquely designed to form continuous solid–liquid co-existent state during spark plasma sintering (SPS) process. Composites fabricated in such a way can be well consolidated by heating during SPS processing in a temperature range between 798 K and 876 K for a heating duration of 1.56 ks. Microstructures of the composites thus fabricated were examined by scanning electron microscopy and no reaction was detected at the interface between the SiC particle and the Al matrix. The relative packing density of the Al–matrix composite containing SiC was higher than 99% in a volume fraction range of SiC between 40% and 55%. Thermal conductivity of the composite increased with increasing the SiC content in the composite at a SiC fraction range between 40 vol.% and 50 vol.%. The highest thermal conductivity was obtained for Al–50 vol.% SiC composite and reached 252 W/mK. The coefficient of thermal expansion of the composites falls in the upper line of Kerner’s model, indicating strong bonding between the SiC particle and the Al matrix in the composite.     

Characterization and dielectric properties of β-SiC nanofibres

SiC nanofibres produced by chemical vapour reaction technique are investigated using scanning and transmission electron microscopy. The nanofibres have been found to have a crystalline core of β-SiC sheathed with thorn-like turbostratic carbon or amorphous Si/O/C, respectively. For this material, real and imaginary part of relative permittivity is measured in a frequency range of 1–18 GHz at room temperature. The results reveal that the permittivity and dielectric loss in the SiC nanofibres are a magnitude higher compared with sub-microcrystalline SiC powder. Composition and nanostructure are held responsible for the difference in dielectric properties. The mechanisms of dielectric loss in the SiC nanofibres are discussed based on interfacial polarization, lattice defects in the SiC nanofibre cores and conduction loss of turbostratic carbon in the thorn-like sheath of SiC nanofibres.     

氮气压力对Si3N4-SiC-TiN陶瓷自蔓延燃烧合成的影响

以TiSi₂为反应原料, SiC 作稀释剂, 利用自蔓延高温合成(SHS) 方法合成Si₃N₄2SiC2TiN 复相陶瓷。计算了氮气压力对毛坯反应物理论转化率的影响, 并在50 、100 和150 MPa 三种氮气压力下进行了燃烧合成。结果表明, 孔隙率为50 vol %的压坯在三种条件下反应都比较完全, 反应物转化率随氮气压力增加而提高。而孔隙率为40 vol %的压坯在较低氮气压力下燃烧反应变得不完全, 产物中残留大片Si 。当压力为150 MPa 时产物中未出现单质Si 。说明氮气压力增大有利于氮气向反应前沿的渗入, 进而提高反应物的转化率。      

Double layer microwave absorber based on Cu dispersed SiC composites

The present work has been focused on designing an efficient and cost-effective double layer microwave absorber in 8.2–12.4?GHz frequency range. For the same, Cu particles were dispersed in SiC to achieve enhanced microwave absorption by combining the excellent dielectric characteristics of SiC with highly conductive Cu. Cu dispersed SiC composites were prepared by dispersing various weight fractions of Cu particles in the SiC matrix using planetary ball mill. The Cu dispersion in SiC yielded excellent relative complex permittivity values translating into a decrease in the reflection loss (RL) values of dispersed composites as compared to the pristine counterpart. The minimum RL of ?17.18?dB has been observed for 2?wt% Cu dispersed SiC composite at 11.81?GHz with a thickness of 1.3?mm and bandwidth corresponding to ?10?dB is 1.77?GHz. Genetic algorithm approach has been implemented to design double layer microwave absorber to further enhance the microwave absorption of the prepared composites for realizing a cost-effective solution. The optimum double layer results show the RL of ?32.16?dB at 11.05?GHz with 1.67?mm total thickness and bandwidth corresponding to ?10?dB is 2.35?GHz.     

Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3压电陶瓷的温度稳定性研究

探讨了硬性添加物MnO2、软性添加物Nb2O5和两性添加物Cr2O3对锑锰锆钛酸铅Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3(简称PMSZT5)压电陶瓷的相组成及温度稳定性的影响.研究结果发现:各掺杂组成在900℃的煅烧温度下,都可以得到钙钛矿结构.随着各掺杂离子的增大,四方相含量减少,准同型相界向三方相移动.综合考虑离子掺杂对PMSZT5压电陶瓷的机电性能及温度稳定性的研究结果表明:锰过量较其它铌和铬掺杂的温度稳定性更好,机电性能最佳的PMSZT5+0.1wt%MnO2的组成,ε33T/ε0=1560,d33=350pC/N,Kp=0.63,25~80℃的fr、K31和d31平均温度系数分别为72×10-6/℃、0.027%/℃和0.100%/℃.