Structural,optical and magnetic properties of Cr doped In<Subscript>2</Subscript>O<Subscript>3</Subscript> powders and thin films

The (In_1?xCr_x)₂O₃ powders as well as thin films of x = 0.03, 0.05 and 0.07 were synthesized using a solid state reaction and an electron beam evaporation technique (on glass substrate), respectively. The influence of Cr doping concentration on structural, optical and magnetic properties of the In₂O₃ samples was systematically studied. The X-ray diffraction results confirmed that all the Cr doped In₂O₃ samples exist cubic structure of In₂O₃ without any secondary phases presence. The chemical composition analyses showed that all the Cr doped In₂O₃ compounds were nearly stoichiometric. The X-ray photoelectron spectroscopy analysis of the Cr doped In₂O₃ thin films showed an increase of oxygen vacancies with Cr concentration and the existence of Cr as Cr³⁺ state in the host In₂O₃ lattice. A small blue shift in the optical band gap was observed in the powder compounds, when the dopant concentration increased from x = 0.03 to x = 0.07. In thin films, the band gap found to increase from 3.63 to 3.74 eV, with an increase of Cr concentration. The magnetic measurements show that the undoped In₂O₃ bulk powder sample has the diamagnetic property at room temperature. And a trace of paramagnetism was observed in Cr doped In₂O₃ powders. However (In_1?xCr_x)₂O₃ thin films (x = 0.00, 0.03, 0.05 and 0.07) samples shows soft ferromagnetism. The observed ferromagnetism in thin films are attributed to oxygen vacancies created during film prepared in vacuum conditions. The ferromagnetic exchange interactions are established between metal cations via free electrons trapped in oxygen vacancies (F-centers).     

Spectral optoelectronic features of Cu-containing arsenic sulfide (As<Subscript>2</Subscript>S<Subscript>3</Subscript>)<Subscript>0.95</Subscript>Cu<Subscript>0.05</Subscript>

Chalcogenide amorphous thin films of the modification (As₂S₃)_0.95Cu_0.05 were prepared using a thermal evaporation technique. The optical properties of the resultant films were investigated based on the transmittance spectra in the photon energy range 1.6–2.82 eV. Thicknesses of the films under study were determined using the envelope technique based on the transmittance spectra. The optical measurements were carried out over the conditional temperature extending from 77 to 300 K. The results of the mentioned measurements are conductive tools in investigating the electronic structures of the Chalcogenide Glasses, however the analysis of the experimental results provide information about the optical gap width and elucidate the broadness of the band tail that may disturb the band gap edges. Moreover, the single-effective oscillator was implemented in calculating both the oscillation and dispersion energies of the films under investigation. The static refractive index and the static dielectric constant were also determined for these films.     

In<Subscript>2</Subscript>O<Subscript>3</Subscript>-decorated ordered mesoporous NiO for enhanced NO<Subscript>2</Subscript> sensing at room temperature

In this work, ordered mesoporous structures of In₂O₃-decorated NiO were prepared by a two-step process, comprising of the synthesis of ordered mesoporous NiO followed by injection of In³⁺ into their pores. The pore size distribution of the as prepared samples was between 4.1 and 21.1 nm. Furthermore, their sensing performances toward NO₂ were tested systematically. The results showed the highest response about 3 towards 15 ppm NO₂ sensing at room temperature for 5.0 at.% In₂O₃-decorated NiO compared to other decorated and pure samples. Moreover, the sensor displayed excellent selectivity towards NO₂ in the presence of other interfering gases, such as carbon monoxide, ammonia, ethanol, methanol, formaldehyde, toluene, acetone. The exceptional NO₂ sensing performance of the In₂O₃-decorated mesoporous NiO may be attributed to their high specific surface area and the formation of p–n junction with modified carrier concentration caused by In³⁺ doping. This method can act as an effective strategy for enhancement of gas-sensing properties of pure metal oxides.     

Properties of nickel doped In<Subscript>2</Subscript>S<Subscript>3</Subscript> thin films deposited by spray pyrolysis technique

In this work, nickel (Ni) doped indium sulfide (In₂S₃) films have been prepared by the spray pyrolysis (CSP) technique on glass substrates at 350 °C. The Ni doping level was changed with Ni:In (0, 2 and 4% in solution). The structural studies reveal that the deposited films are polycrystalline in nature exhibiting cubic structure. The crystallite size decreases from 27.5 to 23 nm and the root mean square roughness values increase from 13 to 18 nm. The transmission coefficient is about 70–55% in the visible region and 85–75% in near-infrared region. The band gap energy increases with nickel content from 2.74 to 2.82 eV for direct transitions. The refractive index values of In₂S₃:Ni thin films decrease from 2.43 to 2.40 and the extinction coefficient values are in the range 0.01–0.20. Besides, the AC conductivity contribution is interpreted using the universal Jonscher’s power law and it is found thermally activated and it can be described by the correlated barrier-hopping models. These studies help to form significant correlation between temperature and activation energy. Nyquist plots show that the electrical response is accurately fitted by the Cole–Cole model and represented by an equivalent electrical circuit which consists of a parallel combination of a resistance and a constant phase element. From this analysis, the evidence of grain boundary conduction has been observed.     

Study of surface morphology and optical properties of Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films with annealing

Nb₂O₅ films have been deposited on variety of substrates using the sol-gel dip coating technique. As-deposited films on all substrates are amorphous. Films were annealed under controlled ambience at 300, 400 and 600°C for 5 h. As-deposited films on glass substrate show uniform surface structure. The crystal structure and surface topography are found to depend strongly on the annealing temperature and nature of the substrates. The average grain size of 40 nm is observed in films annealed at 300°C. On annealing at 400°C increasing grain size and resulting fusing of them, enhanced surface roughness. Films deposited on NaCl substrates crystallized into a stable monoclinic phase and those deposited on single crystal Si substrates crystallized into hexagonal phase after annealing at 600°C. The as-deposited films show very high transmittance (>90%) in the visible region. The optical band gap is observed to increase from 4.35 eV when the films are in amorphous state to 4.87 eV on crystallization.     

Rutile TiO<Subscript>2</Subscript> films as electron transport layer in inverted organic solar cell

Titanium dioxide (TiO₂) thin films were prepared by sol–gel spin coating method and deposited on ITO-coated glass substrates. The effects of different heat treatment annealing temperatures on the phase composition of TiO₂ films and its effect on the optical band gap, morphological, structural as well as using these layers in P3HT:PCBM-based organic solar cell were examined. The results show the presence of rutile phases in the TiO₂ films which were heat-treated for 2 h at different temperatures (200, 300, 400, 500 and 600 °C). The optical properties of the TiO₂ films have altered by temperature with a slight decrease in the transmittance intensity in the visible region with increasing the temperature. The optical band gap values were found to be in the range of 3.28–3.59 eV for the forbidden direct electronic transition and 3.40–3.79 eV for the allowed direct transition. TiO₂ layers were used as electron transport layer in inverted organic solar cells and resulted in a power conversion efficiency of 1.59% with short circuit current density of 6.64 mA cm^?2 for TiO₂ layer heat-treated at 600 °C.     

Correlation between the physical properties and the novel applications of Mg<Subscript>0.7</Subscript>Cu<Subscript>0.3</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> nano-ferrites

Nano-ferrite of the general formula Mg_0.7Cu_0.3Fe₂O₄ was prepared by citrate-gel auto combustion method. The structure was studied by X-ray diffraction, Brunauer–Emmet–Teller, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy analyses. The crystallite size of the investigated nano ferrite was ?39 nm. The magnetic hysteresis measurements at different temperatures (100, 170, 240, and 300 K) were performed using a vibrating sample magnetometer. A correlation between magnetic behavior and lattice strain has been established. Arrott plot has been employed to understand the magnetic behavior of nano-crystalline Mg_0.7Cu_0.3Fe₂O₄. The magnetic susceptibility was carried out using Faraday’s method. Magnetic constants such as Curie temperature, effective magnetic moment, saturation magnetization, and coercivity were obtained and reported. Based on UV diffuse reflectance spectroscopy studies, the optical band gaps are in the range from (1.3–1.9 eV), hence the investigated samples could act as visible light driven photo catalysts.     

Impedance study of PVA/PEG/LiClO<Subscript>4</Subscript>/TiO<Subscript>2</Subscript> nanocomposite solid polymer blend electrolyte

Composite solid polymeric electrolytes (CSPE) of PVA/PEG/LiClO₄ and nanocomposite solid polymeric electrolytes (NSPE) of PVA/PEG/LiClO₄/TiO₂ films were prepared via solution casting technique using water as the solvent. TiO₂ nano powder was prepared from the sulfate process and characterized by the XRD and SEM techniques. The structural interactions of the prepared films were studied by FTIR. Ionic conductivity of the prepared CSPE and NSPE films were measured using AC impedance method at a wide temperature range from 298.15 to 348.15 K in frequency range 50–100 MHz. The measured ionic conductivity results from Nyquist plot were compared with calculations results from equivalent circuit model. The temperature dependence of ionic conductivity of the prepared CSPE and NSPE films was expressed by Arrhenius model and the ionic conductivity activation energy was reported to be 0.86 and 0.89 eV respectively.     

Structural,morphological and optical properties of SnS<Subscript>2</Subscript> thin films by nebulized spray pyrolysis technique

The thin films of Nano crystalline tin disulfide (SnS₂) have been prepared by nebulized spray pyrolysis technique (NSP) with different molar concentrations (0.3, 0.4 and 0.5 M). Cleaned glass substrates were used and the substrate temperature was maintained at 300?°C. The films were deposited using tin tetrachloride monohydrate (SnCl₄·H₂O) and thiourea in de-ionized water and Isopropyl alcohol (1:3 ratio). The prepared films structural, morphological and optical properties were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), UV–Vis spectrophotometer. The structure of the films were found to be face centered cubic with preferential orientation along (002) plane. X-ray line profile analysis was used to evaluate the micro structural parameters such as crystallite size, micro strain, dislocation density and texture coefficient. The average crystallite size values are 60 nm. Morphological results of the SnS₂ thin films are small needle shaped particles and the average grain size was 400 nm. The optical studies revealed that the band gap between 2.65 and 2.72 eV and high optical transmittance 98%. EDAX spectrum of tin disulfide result showed some amount of excess tin was present in the sample. This is the method with very low cost of producing tin disulfide (SnS₂) thin films, which is very important for many applications in industry.     

General aspects of the growth of In-In<Subscript>2</Subscript>O<Subscript>3</Subscript> films

Transformations in indium nanolayers have been studied by optical spectroscopy, microscopy, and gravimetry in relation to the thickness of the layers (2–147 nm) and heat treatment temperature (473–873 K) and time (0–120 min). The kinetic curves for the degree of conversion are adequately described by a linear, inverse logarithmic, parabolic, or logarithmic law, depending on the thickness of the indium film and heat treatment temperature. We have measured the contact potential difference across the In and In₂O₃ films and the photovoltage in the In-In₂O₃ system. The results have been used to derive the energy band diagram of the In-In₂O₃ system. A model has been proposed for the thermal transformation of indium films, which involves oxygen adsorption steps, charge carrier redistribution in the In-In₂O₃ interfacial field (positive on the In₂O₃ side), and In₂O₃ formation.     

Effect of crucible material on optical bandgap and activation energy of Na<Subscript>2</Subscript>O-CdO-P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

In the sodium cadmium phosphate glasses, the effect of diffused alumina from alumina crucible has been assessed by measuring various properties such as mass density, refractive index, optical bandgap and dc conductivity. The results of measurements corresponding to glasses prepared in alumina crucible have been compared with those of glasses prepared in platinum crucible with and without adding Al₂O₃. The Optical bandgap and direct current (dc) electrical conductivity of the Na₂O-CdO-P₂O₅ glasses prepared in alumina and platinum crucibles have been determined at room temperature. These glasses have also been electrically characterised in the temperature range 293–423 K. Activation energy E_a of the samples prepared in alumina crucible lies in the range 0.60–0.96 eV whereas it stands in the range of 0.57–0.94 eV for the samples prepared in platinum crucible.     

Ultraviolet-assisted cold poling of Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript> films

This paper discusses the advantages of a room-temperature poling procedure during exposure to ultraviolet light for Pb(Zr_0.52Ti_0.48)O₃ (PZT) films. The results of these experiments include the following: for 1.7-µm-thick chemical solution-deposited PZT films, the saturation photocurrent density after a 10 min white light exposure (190–1900 nm) (no DC bias field applied) increased up to 0.066 µA/cm² with increasing Cr thickness of top electrode in Cr/Pt bilayer electrodes. Furthermore, the d_33,f piezoelectric coefficients for UV-poled samples were 40 and 20% higher than those achieved from field-only poling at either room temperature or 150 °C. Additionally, the development of an internal bias field and pinching were investigated in major and minor polarization–electric field loops. It was found that ultraviolet illumination during the poling process produced photoinduced charge carriers that became trapped by local defects and/or grain boundaries in the films.     

Enhancement of the optical and mechanical properties of chitosan using Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoparticles

In this work, the optical and mechanical properties of Fe₂O₃ nanoparticles (NPs)/chitosan nanocomposite films have been investigated. Nanocomposite films of different weight ratios of Fe₂O₃ NPs/chitosan (0, 1, 5, 10, 20 and 30 wt%) were fabricated using casting technique. The optical properties of colloidal Fe₂O₃ NPs and Fe₂O₃ NPs/chitosan nanocomposite films were recorded using UV–visible spectrophotometer. As the ratio of Fe₂O₃ NPs to chitosan increases from 0 to 30%, the energy band gap of Fe₂O₃ NPs/chitosan films decreases from 3.16 to 2.11 eV. This decrease is due to quantum confinement effect. The mechanical properties of the nanocomposite films as a function of sweeping temperature were measured using a dynamic mechanical analyzer. An enhancement in storage modulus, stiffness and glass transition temperature (T_g) has been observed as the ratio of Fe₂O₃ NPs/chitosan increases. T_g of Fe₂O₃ NPs/chitosan nanocomposite film shifts towards higher temperature side with respect to pure chitosan film from 152.1 to 166.3?°C as the ratio of Fe₂O₃ NPs/chitosan increases from 0 to 30 wt%. The increase in T_g is mainly attributed to the decrease in free volumes and vacancies in the nanocomposite films as the weight ratio of Fe₂O₃ NPs/chitosan increases.     

Preparation of Sb<Subscript>2</Subscript>S<Subscript>3</Subscript> film on functional organic self-assembled monolayers by chemical bath deposition

In this work, self-assembled monolayers (SAMs) of octadecyltrichlorosilane (OTS) were applied to induce the nucleation and growth of the antimony sulfide (Sb₂S₃) films on the functional ITO glass substrate at low temperature. The structure, morphology, and optical properties of the Sb₂S₃ films were investigated by X-ray diffraction, scanning electron microscopy, X-ray energy dispersive spectroscopy, and UV–vis spectroscopy. After thermal treatment at 200 °C for 1 h in air, the orthorhombic Sb₂S₃ was formed as a predominant phase in the deposited thin films. When the deposited films were thermally treated at 400 °C for 1 h in air, the orthorhombic Sb₂S₃ was decomposed and a cubic Sb₂O₃ was formed. The optical band energies of the as-deposited and thermally treated Sb₂S₃ films at 200 °C for 1 h in air and nitrogen were found to be 2.05 eV, 1.77, and 1.76 eV, respectively. As chemical templates, the OTS-functionalized SAMs played an important role in controlling the nucleation and growth of Sb₂S₃ films at low temperature. The results obtained from different preparation parameters applied in the present work will allow controlling the growth of the Sb₂S₃ films with uniform surface.     

Magnetic,optical, dielectric,and sintering properties of nano-crystalline BaFe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> synthesized by a polymerization method

A one-pot polymerization method using citric acid and glucose for the synthesis of nano-crystalline BaFe_0.5Nb_0.5O₃ is described. Phase evolution and the development of the crystallite size during decomposition of the (Ba,Fe,Nb)-gel were examined up to 1100 °C. Calcination at 850 °C of the gel leads to a phase-pure nano-crystalline BaFe_0.5Nb_0.5O₃ powder with a crystallite size of 28 nm. The shrinkage of compacted powders starts at 900 °C. Dense ceramic bodies (relative density ≥ 90%) can be obtained either after conventional sintering above 1250 °C for 1 h or after two-step sintering at 1200 °C. Depending on the sintering regime, the ceramics have average grain sizes between 0.3 and 52 µm. The optical band gap of the nano-sized powder is 2.75(4) eV and decreases to 2.59(2) eV after sintering. Magnetic measurements of ceramics reveal a Néel temperature of about 23 K. A weak spontaneous magnetization might be due to the presence of a secondary phase not detectable by XRD. Dielectric measurements show that the permittivity values increase with decreasing frequency and rising temperature. The highest permittivity values of 10.6 × 10⁴ (RT, 1 kHz) were reached after sintering at 1350 °C for 1 h. Tan δ values of all samples show a maximum at 1–2 MHz at RT. The frequency dependence of the impedance can be well described using a single RC-circuit.     

Electrochemical performance of potentio-dynamically deposited Co<Subscript>3</Subscript>O<Subscript>4</Subscript> electrodes: influence of annealing temperature

Co₃O₄ thin films were deposited potentiodynamically on to the stainless steel substrate. Prepared samples were annealed within the temperature range 473 K to 873 K by the interval of 100 K. XRD study reveals cubic crystal structure of Co₃O₄. FE-SEM showed compact agglomerated granular type morphology. Electrochemical characterization of electrodes showed pseudo capacitive behavior. Maximum value of specific capacitance (441.17 F/g) was achieved at the scan rate 2 mV/s in 1 M KOH with 87.88% stability. Charge–discharge curves showed nonlinear behavior and used to calculate the specific energy, specific power and columbic efficiency which were 20.98 W/kg, 15.96 kW/kg and 86.63% respectively. EIS of complex impedance spectra showed internal resistance ~0.9435 Ω.     

Preparation of nanocrystalline Cu<Subscript>2</Subscript>O thin film by pulsed laser deposition

In this paper, the synthesis of nanocrystalline copper oxides Cu₂O and CuO thin films on glass substrates using a pulsed 532 nm Nd:YAG laser is presented. Deposition of films is achieved at two different substrate temperatures. The influence of substrate temperature on the structural and optical properties of copper oxide films are discussed and analyzed. The X-ray diffraction (XRD) results show that the deposited films are crystalline in nature. Films prepared at 300 °C substrate temperature were Cu₂O and has (111) and (200) diffracted peaks, while films grown at 500 °C were CuO and has (111) and (020) planes. The morphology of deposited films were characterized by scanning electron microscope (SEM) and atomic force microscope (AFM). The optical energy gap of Cu₂O and CuO films have been determined and found to be 2.04 and 1.35 eV respectively.     

Photoelectrochemical properties of lead-free ferroelectric ceramic Ba(Ti<Subscript>0.96</Subscript>Mg<Subscript>0.013</Subscript>Nb<Subscript>0.026</Subscript>)O<Subscript>3</Subscript>: application to solar conversion of eosin

The lead-free Ba(Ti_0.96Mg_0.013Nb_0.026)O₃ composition has been prepared by solid state reaction. The room temperature X-ray diffraction revealed a perovskite phase with a tetragonal symmetry. The complex dielectric permittivity measured on cooling from 470 to 150 K in the frequency range (10²–10⁶ Hz) indicated a ferroelectric behavior and exhibited a large electromechanical response. This ferroelectric perovskite showed photoelectrochemical properties with an optical gap of 2.90 eV, n-type conduction and a flat band potential of ?0.57 V _SCE . As application, the oxide is successfully tested for the eosin oxidation under solar light. At pH ~ 6.3, 90 % of eosin (15 mg L^?1) disappeared after 6 h of illumination for a catalyst dose of 2.5 g L^?1.     

Structural stability of In<Subscript>2</Subscript>O<Subscript>3</Subscript> films as sensor materials

A structural stability of In₂O₃ films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In₂O₃ films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In₂O₃ films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In₂O₃ films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In₂O₃ films led to improvement of their operational parameters.     

Structural,optical and microscopic properties of chemically deposited In<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films

Solar cell technologically important binary indium selenide thin film has been developed by relatively simple chemical method. The reaction between indium chloride, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at room temperature gives deposits In₂Se₃ thin film. Various preparative parameters are discussed. The as grown films were found to be transparent, uniform, well adherent, red in color. The prepared films were studied using X-ray diffraction, scanning electron microscopy, atomic absorption spectroscopy, Energy dispersive atomic X-ray diffraction, optical absorption and electrical conductivity properties. The direct optical band gap value E_g for the films was found to be as the order of 2.35 eV at room temperature and having specific electrical conductivity of the order of 10⁻² (Ω cm)⁻¹ showing n-type conduction mechanism. The utility of the adapted technique is discussed from the point of view of applications considering the optoelectric and structural data obtained.