Mode Analytical Study of Cylindrical Cavity Power Combiners

A mode analytical treatment of cylindrical cavity power combiners is presented to discuss power-combining capability and the method for attaining stable desired mode operation. Both the conventional coaxial-probe output type and the window output type are treated, based on a circuit model which can support TM/sub 010/, TM/sub 020/, and TM/sub m10/ modes (1<=m<=N, N being the number of active devices employed). It is shown that adoption of the window output largely facilitates undesired mode suppression and also enables power combining in some azimuthal modes.     

Cylindrical TE/sub 011/ /TM/sub 111/ Mode Control by Cavity Shaping

An appropriate modification of the shape of a cylindrical filter cavity has been used to separate the degenerate TM/sub 111/ (doublet) modes while at the same time providing a slight increase in the already high unloaded Q of the desired TE/sub 011/ mode. Experimental results of mode frequencies and unloaded Q's are tabulated for a family of shaped cavities. Two low-loss filters utilizing these cavities are discussed. The general correspondence between modes of spherical, cylindrical and rectangular cavities and waveguides is described in order to place the performance of intermediate shapes in perspective.     

Calculation of TM/sub 0n/ Dispersion Relations in a Corrugated Cylindrical Waveguide

The TM/sub 0n/-mode Maxwell equations in a cylindrical geometry are converted to a state-vector system of coupled linear differential equations, in which the boundary conditions for a waveguide of varying diameter are included in the coefficient matrix of the state-vector system. The particular problem of periodic boundary conditions is solved for a waveguide with a sinusoidally undulating wall.     

TM020模多注速调管圆柱谐振腔的仿真设计

根据微波电磁场理论设计了工作于L波段的TM020模圆柱谐振腔,由模式场分布图结合数学方法确定出漂移管在谐振腔中的位置,利用三维电磁场仿真软件Isfel3D对空腔及腔体加漂移管后进行仿真,得到了加漂移管前后谐振腔的特征参数和模式场分布图,同时将模TM020与基模TM010进行比较,证明工作于TM020模式的谐振腔可以增大谐振腔的体积,减小阴极负载,提高谐振腔的功率容量.     

Circular TE/sub 0n/ Mode Filters for Guided Millimeter-Wave Transmission

A millimeter-wave circular TE/sub 01/ mode waveguide generates undesired circularly symmetric modes (TE/sub 02/, TE/sub 03/ modes, etc.) in bends or at discontinuities along a waveguide line. This paper describes the theory and experiment on the TE/sub 02/ and TE/sub 03/ mode filters developed for guided millimeter-wave transmission. The experimental results of two improved TE/sub 03/ mode filters show that the attenuation of the TE/sub 03/ mode is more than 16 dB for one type over the 40-70-GHz range. The TE/sub 01/-mode insertion loss of another type is about 0.2 dB over the 40-80-GHz range. The present mode filters can be applied to various high-speed guided rnillimeter-wave systems currently under development.     

Analysis and Design of TE/sub 11/-to-HE/sub 11/ Corrugated Cylindrical Waveguide Mode Converters

A theoretical parametric study is given of a TE/sub 11/-to-HE/sub 11/ mode converter consisting of a section of cylindrical corrugated waveguide with varying slot depth. The analysis makes use of modal field-matching techniques to determine the scatter marks of the mode converter from which we deduce its propagation properties. It is shown that a mode converter consisting of only five slots achieves a return loss better than 30dB over the band 2.7相似文献   

TE /sub 11/ to HE /sub11/ Cylindrical Waveguide Mode Converters Using Ring-Loaded Slots

A theoretical parameter study is given of a TE/sub 11/ to HE/sub 11/ mode converter consisting of a section of cylindrical corrugated waveguide with ring-loaded slots. The analysis, using modal field-matching techniques to determine the scatter matrix of the converter, allows the return loss to be computed accurately. For a wide range of waveguide sizes it is shown that a bandwidth ratio of 1.5 with a return loss better than 30 dB is possible. The low-frequency performance of the converter is limited by the deterioration in return loss, while at high frequencies the generation of a small amount of unwanted EH/sub 12/ mode is the restriction. If the effects of this mode can be neglected, operation over a wider bandwidth is possible, particularly for larger waveguide size.     

TM310高次模圆柱形谐振腔耦合矩形波导输出回路研究

设计了适用于多注速调管,工作在TM310高次模圆柱形谐振腔耦合矩形波导输出回路,其工作中心频率为7 585.3 MHz,计算了腔体内各漂移管间隙阻抗的频率特性,并分析了输出回路的输出带宽.研究结果表明: 在相同频率条件下,采用圆柱形TM310工作模式的谐振腔体积将是采用圆柱形TM010工作模式谐振腔体积的7倍;TM310高次模圆柱形谐振腔耦合矩形波导后,各漂移管特性阻抗与耦合前相比有稍微变化,但耦合后各间隙特性阻抗非常接近;反射系数相位法及等效电路法计算输出腔外观品质因数分别为为154和160,输出中心频率7 585.263 MHz,比耦合前腔体谐振频率降低26.525 MHz,输出带宽约为3%,因此,该类型输出回路比较适合用作高射频段的窄带多注速调管.     

Improved Selectivity in Cylindrical TE/sub 011/ Filters by TE/sub 211/TE/sub 311/ Mode Control

A new method is presented for the design of low loss cylindrical TE/sub 011/-mode resonators whereby transmission nulls can be placed near the TE/sub 011/, resonance by controlling the TE/sub 211/, and TE/sub 311/, modes that are naturally excited in the same resonator. The frequencies at which the nulls occur are controlled by the angular offset of the sidewall coupling apertures and the relative amplitude of the TE/sub 011/ mode compared to the TE/sub 211/ and TE/sub 311/ modes. It is also shown that a lumped constant circuit model can be used to accurately represent the multimode response of the resonator.     

圆柱谐振腔TE0np模式净化的研究

主要通过对圆柱谐振腔电磁场特性的分析,探讨采用对称的矩形波导的小孔在合适的腔体位置电磁激励、优化腔体大小的设计和谐振腔后腔处理,以达到对谐振腔中一些高次模和干扰模的抑制,即一腔多模的模式净化,同时提出了降低高次模和干扰模的有效方法,仿真和实验结果相吻合。     

Techniques for Increasing the Bandwidth of a TM/sub 010/-Mode Power Combiner

A computer analysis of the TM/sub 010/-mode power combiner for N diodes is described which identifies circuit parameters that increase the bandwidth of the power combiner. These parameters reduce the external Q and provide unique techniques for increasing the bandwidth of injection-locked power combiners. Comparisons with external Q measurements give experimental verification of the analysis.     

Inline TM/sub 110/-mode filters with high-design flexibility by utilizing bypass couplings of nonresonating TE/sub 10/01/ modes

This paper presents a new class of pseudoelliptic function filters that are based on compact inline TM/sub 110/-mode cavity configurations. No structural folding is required. The bypass couplings are implemented through the nonresonating TE/sub 10/01/ modes so that arbitrarily positioned transmission zeros can be implemented. Design guidelines to generate a given transmission zero on the desired side of the passband and how to control it are presented. To demonstrate its flexibility, the approach is illustrated at examples of four-pole inline filters providing Chebyshev, elliptic-function-type, and asymmetric characteristics. Performance comparisons with different numerical codes validate the designs. A fourth-order pseudoelliptic filter with four transmission zeros is then designed, constructed, and measured. Excellent agreement between simulated and experimental results verifies the approach.     

Precise Calculations and Measurements on the Complex Dielectric Constant of Lossy Materials Using TM/sub 010/ Cavity Perturbation Techniques

An exact field theory solution for the cylindrical TM/sub 010/ cavity with a coaxial lossy dielectric cylinder is given. The error in the calculated field solutions is estimated to be less than 1 percent of the true values. Correction for the cavity holes used to introduce the sample is taken into account. The exact solution shows that the real part of the permittivity (epsilon') is a complex function of both the frequency shift and the change in the loaded Q-factor (Q/sub L/). On the other hand the imaginary part (epsilon") is nearly proportional to delta(1/Q/sub L/) and it has different slopes for varying frequencies. By means of active cavity techniques already reported, experimental measurements on epslion' and epsilon" taken at 2.2 GHz on a number of materials (water, teflon, n-proponal, methanol, etc.) agree with published data within 1 percent even when rising large samples.     

High-T/sub 0/ strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 /spl mu/m

Strain-compensated InGaAsSb-AlGaAsSb quantum-well (QW) lasers emitting near 2.5 /spl mu/m have been grown by solid-source molecular beam epitaxy. The relatively high arsenic composition causing a tensile strain in the Al/sub 0.25/GaAs/sub 0.08/Sb barriers lowers the valence band edge and the hole energy level, leading to an increased hole confinement and improved laser performance. A 60% external differential efficiency in pulsed mode was achieved for 1000-/spl mu/m-long lasers emitting at 2.43 /spl mu/m. A characteristic temperature T/sub 0/ as high as 163 K and a lasing-wavelength temperature dependence of 1.02 nm//spl deg/C were obtained at room temperature. For 2000 /spl times/ 200 /spl mu/m/sup 2/ broad-area three-QW lasers without lateral current confinement, a low pulsed threshold of 275 A/cm/sup 2/ was measured.     

60-GHz high power performance In/sub 0.35/Al/sub 0.65/As-In/sub 0-35/Ga/sub 0.65/As metamorphic HEMTs on GaAs

We report on a double-pulse doped, double recess In/sub 0.35/Al/sub 0.65/As-In/sub 0.35/Ga/sub 0.65/As metamorphic high electron mobility transistor (MHEMT) on GaAs substrate. This 0.15-/spl mu/m gate MHEMT exhibits excellent de characteristics, high current density of 750 mA/mm, extrinsic transconductance of 700 mS/mm. The on and off state breakdown are respectively of 5 and 13 V and defined It gate current density of 1 mA/mm. Power measurements at 60 GHz were performed on these devices. Biased between 2 and 5 V, they demonstrated a maximum output power of 390 mW/mm at 3.1 V of drain voltage with 2.8 dB power gain and a power added efficiency (PAE) of 18%. The output power at 1 dB gain compression is still of 300 mW/mm. Moreover, the linear power gain is of 5.2 dB. This is to our knowledge the best output power density of any MHEMT reported at this frequency.     

BCB-bridged distributed wideband SPST switch using 0.25-/spl mu/m In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic HEMTs

In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-/spl kappa/ benzocyclobutene (BCB) bridged technology. The current gain cutoff frequency, and the electron transit time of In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As mHEMTs have been investigated. By analyzing the extrinsic total delay time, the effective velocity of electrons can be estimated, and the average velocity is 2.3/spl times/10/sup 7/cm/s. The dc-30 GHz distributed wideband SPST switch exhibits an insertion loss of less than 5.5 dB, and an isolation larger than 30 dB, which is the first demonstration of the high-isolation of InAlAs-InGaAs mHEMTs monolithic switch. As to the power performance, this switch can handle the power up to 12 dBm at 2.4 GHz. After over 250 h of 85-85 (temperature =85/spl deg/C, humidity =85%) environmental evaluation, this BCB passivated and bridged microwave and monolithic integrated circuit switch demonstrates reliable RF characteristics without any significant performance change, which proves that this process using the low-/spl kappa/ BCB layer is attractive for millimeter-wave circuit applications.     

Application of the Galerkin Method for Determination of Quasi TE/sub i0k/ Mode Frequencies of a Rectangular Cavity Containing a Dielectric Sample

A new method determination of quasi TE/sub i0k/ mode frequencies of a rectangular cavity containing a dielectric sample is presented. A centrally loaded dielectric sample fills completely only one dimension of a cross section of the cavity. The calculations are based on the Galerkin method using a new suitable set of basis functions. The theoretical results are illustrated by experiments. The obtained results of calculations and experiments demonstrate the advantages of the new basis as compared with the classical one. The presented method may be applied for the analysis of two-dimensional boundary problems for various resonant cavities with inhomogeneous filling.     

G/sub m/-boosted common-gate LNA and differential colpitts VCO/QVCO in 0.18-/spl mu/m CMOS

The demand for radio frequency (RF) integrated circuits with reduced power consumption is growing owing to the trend toward system-on-a-chip (SoC) implementations in deep-sub-micron CMOS technologies. The concomitant need for high performance imposes additional challenges for circuit designers. In this paper, a g/sub m/-boosted common-gate low-noise amplifier (CGLNA), differential Colpitts voltage-controlled oscillators (VCO), and a quadrature Colpitts voltage-controlled oscillator (QVCO) are presented as alternatives to the conventional common-source LNA and cross-coupled VCO/QVCO topologies. Specifically, a g/sub m/-boosted common-gate LNA loosens the link between noise factor (i.e., noise match) and input matching (i.e., power match ); consequently, both noise factor and bias current are simultaneously reduced. A transformer-coupled CGLNA is described. Suggested by the functional and topological similarities between amplifiers and oscillators, differential Colpitts VCO and QVCO circuits are presented that relax the start-up requirements and improve both close-in and far-out phase noise compared to conventional Colpitts configurations. Experimental results from a 0.18-/spl mu/m CMOS process validate the g/sub m/-boosting design principle.     

Analysis and simulation of a mid-infrared P/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30//n/sup 0/-InAs/sub 0.89/Sb/sub 0.11//N/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30/ double heterojunction photodetector grown by LPE

A photovoltaic detector based on an N/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30//n/sup 0/-InAs/sub 0.89/Sb/sub 0./$ d1/sub 1//P/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30/ double heterostructure (DH) suitable for operation in the mid-infrared (MIR) spectral region (2 to 5 /spl mu/m) at room temperature has been studied. A physics based closed form model of the device has been developed to investigate the relative importance of the different mechanisms which determine dark current and photoresponse. The results obtained on the basis of the model have been compared and contrasted with those obtained from experimental measurements on DH detectors fabricated previously in our laboratory using liquid phase epitaxy (LPE). The model helps to explain the various physical mechanisms that shape the characteristics of the device under room temperature operation. It can also be used to optimize the performance of the photodetector in respect of dark current, responsivity and detectivity. A comparison of theoretical predictions and experimental results revealed that Shockley-Read-Hall (SRH) recombination is more important than Auger recombination in determining the room temperature detector performance when the concentration of nonradiative recombination centers in our material exceeds 10/sup 17/ cm/sup -3/. Furthermore, compositional grading in the cladding regions of the double heterostructure has been found to be responsible for the reduction of the detectivity of the device in the shorter wavelength region.     

Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region

P-type doping is used to demonstrate high-To, low-threshold 1-3 /spl mu/m InAs quantum-dot lasers. A 5-/spl mu/m-wide oxide confined stripe laser with a 700-/spl mu/m-long cavity exhibits a pulsed T/sub 0/ = 213 K (196 K CW) from 0/spl deg/C to 80/spl deg/C. At room temperature, the devices have a CW threshold current of /spl sim/4.4 mA with an output power over 15 mW. The threshold at 100/spl deg/C is 8.4 mA with an output power over 8 mW.