大型激光装置光学元件的稳定性分析

大型高功率固体激光装置对打靶精度有很高的要求，总的打靶精度通常在几十微米。而分配到单个光学元件的稳定性指标只有几微米或者几个微弧度，某些光学元件的稳定性指标甚至小于一微弧。这就对结构的稳定性提出了很高的要求。以一大型激光装置为背景，以关键光机系统为例进行稳定性设计。应用有限元理论对关键光学元件及其支撑结构的稳定性进行分析，以验证光机结构设计的合理性。分析结果表明关键光学元件均满足稳定性设计指标和裕度系数。     

纳米切削过程中刀-屑接触区应力分布研究

高速切削时刀屑接触区的应力分布直接影响切削过程、切削温度及刀具磨损。利用分子动力学技术对纳米切削过程中刀屑接触区的应力分布特征进行研究,分别采用EAM势、Tersoff 势及Morse势计算单晶铜原子间、单晶硅原子间、工件原子与刀具原子间的相互作用力。分析纳米尺度下刀屑接触长度随切削距离变化的规律,探讨刀具前角对刀屑接触区应力分布的影响,通过描述刀屑接触区切屑原子的运动情况,为阐释刀屑接触区的应力分布特征提供依据。研究结果表明在刀-铜屑接触区,正应力在切削刃处最大,随着到切削刃距离的增大而减小,在刀-硅屑接触区,正应力以规则的波动形式逐渐减小。而切应力在切削刃处为负值,随着到切削刃距离的增大,切应力在刀屑接触长度的三分之二处增大到最大值后逐渐减小至零。     

高速锯切单晶硅的锯切力和锯缝崩边研究

探讨在单晶硅的高速精密锯切中,锯切用量与锯切崩边幅度大小之间的关系。通过使用金刚石薄锯片对单晶硅进行高速锯切,测量和分析不同参数下的锯切力,并结合锯切力比来分析金刚石锯片对单晶硅的锯切中力与崩边相互联系的特征。结果表明:在高速锯切单晶硅过程中,锯切深度、进给速度增大都能引起锯切力与力比的增大,也造成了单晶硅崩边情况更加严重。但是转速的提高则可以使锯切力大幅降低,并有效抑制加工过程中沟槽侧面的崩边问题。锯切深度与进给速度的增加引起锯切力增大时使单晶硅材料更加倾向于脆性断裂而被去除,但是提高转速降低锯切力后可使单晶硅渐转化为塑性去除,有效提高了加工产品质量。     

方型硅杯力敏器件计算机辅助设计

介绍了扩散硅力敏器件计算机辅助设计的方法。根据方型硅杯形式的有限元分析结果，计算力敏器件的性能。给出了方型硅杯形式的应力和热应力分布曲线以及力敏电阻灵敏度曲线，为传感器的设计和平面工艺版图设计提供了理论依据     

A THRESHOLD MODEL FOR LASER CLEANING OF LARGER SILICON WAFERS

High cleaning quality for silicon wafers without damage is a challenge in laser cleaning technologies. Laser cleaning of Al₂O₃ micro-particles, which are the main contaminants of silicon wafer lapping and polishing solutions used in industry, from silicon wafers was studied for determining laser energy for high efficient particle removal while not causing damage to the wafers. As the cleaning force is generated from laser-energy absorption and conduction of the wafer, heat-conduction model on silicon wafer was developed during laser irradiation using a finer finite element method, from which cleaning force exerting on the particles greater than the adhesion force between the particle and the substrate, but less than the wafer damage energy of laser input was determined. Calculations of the laser energy threshold values for both particle cleaning and wafer damage were conducted for silicon wafers of 200 mm in diameter and 0.2 mm in thickness, and they were found to be about 60 mJ/cm² and 320 mJ/cm², respectively. The laser energy threshold model was finally verified experimentally using a KrF Excimer laser and found to be in good agreement with the experimental data. With the cleaning parameters from the model, the cleaning efficiency of as high as 98% has been achieved.     

Fast Fourier Transform Analysis of Computer-Acquired Friction Data©

A commercial computer program for data acquisition and analysis has been used to facilitate the evaluation of the frequency content of friction force data obtained from a sliding wear test. The program uses a fast Fourier transform (FFT) algorithm to calculate the frequency spectrum of the friction force. The validity of the FFT program has been demonstrated by applying it to a recently published example that used a detailed mathematical treatment to remove an oscillatory component from friction data. When applied to friction force data from a pin-on-disk sliding wear test of NBD 200 silicon nitride sliding on NBD 100 silicon nitride, filtering of the dominant frequencies revealed by the FFT method reduces both the general dispersion of the friction values and almost completely eliminates localized signal perturbations. Successive filtering steps permit the association of particular frequencies with observed signal disturbances. Although the mean friction value in this example is not greatly altered by the frequency filtering, knowledge of the existing vibration frequency components in the tribosystem is important for a complete interpretation of wear mechanisms and for characterization of the machine/specimen interaction.     

IMPROVED FABRICATION METHOD FOR CARBON NANOTUBE PROBE OF ATOMIC FORCE MICROSCOPY（AFM）

An improved arc discharge method is developed to fabricate carbon nanotube probe of atomic force microscopy (AFM) here. First, silicon probe and carbon nanotube are manipulated under an optical microscope by two high precision microtranslators. When silicon probe and carbon nanotube are very close, several tens voltage is applied between them. And carbon nanotube is divided and attached to the end of silicon probe, which mainly due to the arc welding function. Comparing with the arc discharge method before, the new method here needs no coat silicon probe with metal film in advance, which can greatly reduce the fabrication's difficulty. The fabricated carbon nanotube probe shows good property of higher aspect ratio and can more accurately reflect the true topography of silicon grating than silicon probe. Under the same image drive force, carbon nanotube probe had less indentation depth on soft triblock copolymer sample than silicon probe. This showed that carbon nanotube probe has lower spring constant and less damage to the scan sample than silicon probe.     

激光清洗硅片表面Al2O3颗粒的试验和理论分析

以KrF准分子激光器为激光源,对目前工业上常用的硅片研磨抛光液的主要成分Al₂O₃颗粒进行激光清洗的试验和理论分析。建立一维热传导模型,利用有限元分析软件MSC.MarC模拟硅片表面的温度随激光作用时间和能量密度的分布。通过理论计算,量化了颗粒所受到的清洗力以及其与硅片表面之间的粘附力,理论预测出1 μm Al₂O₃颗粒的激光清洗阈值为60 mJ/cm²。在理论分析的指导下,利用248 nm、30 ns的KrF准分子激光进行单因素试验,研究激光能量密度、脉冲个数、激光束入射角度对激光干法清洗效率的影响,并且实验验证了清洗模型以及场增强效应对激光清洗结果的影响。     

Investigations on the friction force anisotropy of the silicon lattice

State of the art thin film technologies allow silicon, the material of choice in semiconductor applications, to be used for micro-electro-mechanical systems (MEMS) type microactuators. To investigate the suitability of silicon for these applications, friction force tests for a silicon-silicon interface were performed. For microactuators using friction bearings there is a great need for a general understanding of friction and wear phenomena. Since silicon wafers in general exhibit a single crystalline structure, the investigations included activities regarding the influence of the single crystal silicon’s orientation. The test result shows a periodic change in the coefficient of friction depending on the slider’s rotational position. For instance, a single crystal silicon disk with a {1 1 1} surface crystal orientation exhibits six recurring maxima of the friction force per rotation when tested against a specimen with the same crystal orientation. The contact between wafer and specimen results in a coefficient of friction μ reaching its maximal value of 0.5 every 60° of rotation. To find the root cause for this repetitive behavior, the sliding directions for maximal friction values were compared to the wafer’s respective crystal orientation. For a {1 1 1} silicon wafer, the atoms at the surface are arranged in equilateral triangles. The angle of 60° between the atoms in these triangles corresponds with the periodicity of the friction force. It therefore may be concluded that the coefficient of friction follows the crystal structure. Depending on the lattice orientation, the friction force varies by more than 50%. This information is crucial for designing a micro-slide bearing as well as choosing a combination of lattice orientations that yield minimal friction.     

High efficiency fine boring of monocrystalline silicon ingot by electrical discharge machining

This article deals with high efficiency and high accuracy fine boring in a monocrystalline silicon ingot by electrical discharge machining (EDM). In manufacturing process of integrated circuits, a plasma-etching process is used for removing oxidation films. This process has recently been examined for use of monocrystalline silicon as the electrode to minimize the contamination. However, it is difficult to machine silicon accurately by the conventional diamond drilling method, because the material removal is due to brittle fracture. The machining force in the EDM process is very small compared with that in conventional machining, therefore, the possibility of high efficiency and high accuracy boring holes in silicon ingot by EDM is experimentally investigated. The removal rate of monocrystalline silicon by EDM is much higher than that of steel, while the electrode wear is extremely small. The improvement method leads to a better hole without chipping at the exit of hole or sticking of the insulator on the wall of hole. Furthermore, it is proved that even a high aspect ratio of about 200 boring is possible.     

单颗金刚石磨粒切削氮化硅陶瓷仿真与试验研究

为探索氮化硅陶瓷单颗磨粒切削加工的机理,进行单颗金刚石磨粒切削氮化硅陶瓷的仿真与试验。选用截角八面体模拟金刚石磨粒,基于Johnson-Holmquist ceramic硬脆材料本构模型,采用有限元网格法进行单颗磨粒直线切削仿真,分析工件材料的切屑去除、划痕形貌、应力动态变化与分布、切削力变化等现象,以及工艺参数对切削力的影响。制备单颗金刚石磨粒工具,在平面磨床上进行单颗磨粒切削氮化硅陶瓷的试验,进一步分析划痕形貌、切削力的变化,并验证有限元仿真的正确性。研究表明,划痕光直平整,塑性隆起很少,边缘存在较大尺寸的破碎,划痕内有局部小尺寸的破碎;划痕的深度和宽度比磨粒的切削深度和宽度尺寸略大。应力与切削力存在动态波动。随着砂轮速度的增加,切向力和法向力减小;随着切削深度的增加,切向力和法向力增大。切削力比在4～6之间变化。