Effect of Bi2O3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn2SiO4 Ceramics

Bi₂O₃ was added to a nominal composition of Zn_1.8SiO_3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi₂O₃ content was <8.0 mol%, a porous microstructure with Bi₄(SiO₄)₃ and SiO₂ second phases was developed in the specimen sintered at 885°C. However, when the Bi₂O₃ content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛ_r=7.6, and τ_f=−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi₂O₃ sintered at 885°C for 2 h.     

Factors Affecting the Electrical Conductivity of Donor-Doped Bi4Ti3O12 Piezoelectric Ceramics

High-temperature piezoelectric ceramics based on W⁶⁺-doped Bi₄Ti₃O₁₂ (W-BIT) were prepared by both the conventional mixing oxides and the chemical coprecipitation methods. Sintering was carried out between 800° and 1150°C in air. A rapid densification, >99% of the theoretical density (rho_th) at 900°C/2 h, took place in the chemically prepared W⁶⁺-doped Bi₄Ti₃O₁₂ ceramics, whereas conventionally prepared BIT-based materials achieved a lower maximum density, ∼94% of rho_th, at higher temperature (1050°C). The microstructure study revealed a platelike morphology in both materials. Platelike grains were larger in the conventionally prepared W-BIT-based materials. The sintering behavior could be related both to the agglomeration state of the calcined powders and to the enlargement of the platelets at high temperature. The W⁶⁺-doped BIT materials showed an electrical conductivity value 2-3 orders of magnitude lower than undoped samples. The electrical conductivity increased exponentially with the aspect ratio of the platelike grains. The addition of excess TiO₂ produced a further decrease of the electrical conductivity.     

Sintering and Microwave Dielectric Properties of the LiNb0.63Ti0.4625O3 Ceramics with the B2O3–SiO2 Liquid-Phase Additives

The effect of B₂O₃–SiO₂ liquid-phase additives on the sintering, microstructure, and microwave dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics was investigated. It was found that the sintering temperature could be lowered easily, and the densification and dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics could be greatly improved by adding a small amount of B₂O₃–SiO₂ solution additives. No secondary phase was observed for the ceramics with B₂O₃–SiO₂ additives. With the addition of 0.10 wt% B₂O₃–SiO₂, the ceramics sintered at 900°C showed favorable microwave dielectric properties with ɛ_r=71.7, Q × f =4950 GHz, and τ_f=−2.1 ppm/°C. The energy dispersive spectra analysis showed an excellent co-firing interfacial behavior between the LiNb_0.63Ti_0.4625O₃ ceramic and the Ag electrode. It indicated that LiNb_0.63Ti_0.4625O₃ ceramics with B₂O₃–SiO₂ solution additives have a number of potential applications on passive integrated devices based on the low-temperature co-fired ceramics technology.     

Bi4Ti3O12 Ceramics from Powders Prepared by Alternative Routes: Wet No-Coprecipitation Chemistry and Mechanochemical Activation

The processing of ferroelectric Bi₄Ti₃O₁₂ ceramics from powders prepared by wet no-coprecipitation chemistry (WNCC) and mechanochemical activation (MCA) has been investigated. Dense ceramics were obtained at sintering temperatures as low as 900°C. Exaggerated grain growth was observed for samples from WNCC, but not for those from MCA. Dielectric properties are discussed in relation to the type and concentration of defects, which is smaller for ceramic samples from WNCC. The activation energy of the dielectric relaxation for ceramics from MCA suggests that additional V _O^•• are present at the pseudoperovskite [Bi₂Ti₃O₁₀]²⁻ block in this case.     

Dielectric and Ferroelectric Properties of Nanocrystalline Bi2Ti2O7 Prepared by a Metallorganic Decomposition Method

Nanopowders of Bi₂Ti₂O₇ were synthesized by a metallorganic decomposition (MOD) technique. Pure Bi₂Ti₂O₇ nanocrystals formed after annealing at 550°C for 5 min. X-ray patterns show that Bi₂₀TiO₃₂ is a metastable phase during Bi₂Ti₂O₇ formation. It was found that there were two peaks in the curves of the dielectric response as a function of temperature for pressed nanocrystalline Bi₂Ti₂O₇ samples. The Curie temperature decreases with decrease of grain size whereas the ferroelectric-ferroelectric phase transition temperature increases. The hysteresis loops observed also suggest that Bi₂Ti₂O₇ might belong to a ferroelectric material.     

Sintering of Zinc Oxide Doped with Antimony Oxide and Bismuth Oxide

The phase change, densification, and microstructure development of ZnO doped with both Bi₂O₃ and Sb₂O₃ are studied to better understand the sintering behavior of ZnO varistors. The densification behavior is related to the formation of pyrochlore and liquid phases; the densification is retarded by the former and promoted by the latter. The pyrochlore phase, whose composition is Bi_3/2ZnSb_3/2O₇, appears below 700°C. The formation temperature of the liquid phase depends on the Sb/Bi ratio: about 750°C for Sb/Bi < 1 by the eutectic melting in the system ZnO—Bi₂O₃, and about 1000°C for Sb/Bi > 1 by the reaction of the pyrochlore phase with ZnO. Hence, the densification rate is determined virtually by the Sb/Bi ratio and not by the total amount of additives. The microstructure depends on the sintering temperature. Sintering at 1000°C forms intragrain pyrochlore particles in ZnO grains as well as intergranular layers, but the intragrain particles disappear at 1200°C by the increased amount of liquid phase, which enhances the mobility of the solid second phase.     

Sintering and Dielectric Characterization of Pseudoternary Compounds from the Bi2O3–TiO2–TeO2 System

Using X-ray diffraction analysis, scanning electron microscopy, thermogravimetry, and measurements of the dielectric properties up to the MW frequency range, the characterization of Bi₂Ti₃TeO₁₂, Bi₂TiTeO₈, and Bi₆Ti₅TeO₂₂ compounds, which all include Te⁶⁺, was performed. As the processes of Te⁶⁺ reduction and the evaporation of TeO₂-containing species contribute to the presence of secondary phases, the preparation of single-phase ceramics is rather difficult. To minimize the amount of secondary phases during the firing process, the pellets were muffled in a corresponding compound and then fired in an autoclave furnace under 10 bars of oxygen pressure. By sintering the Bi₂Ti₃TeO₁₂, Bi₂TiTeO₈, and Bi₆Ti₅TeO₂₂ between 840° and 1010°C, ceramics with ɛ_r ranging from 36 to 350, Q × f values from 220 to 12 500 GHz, and τ_f from +41 to +2600 ppm/K were obtained.     

Microwave Dielectric Properties and Chemical Resistance of Low-Temperature-Sintered CaZrB2O6 Ceramics

Dolomite-type borate ceramics consisting of CaZrB₂O₆ were synthesized via a conventional solid-state reaction route; low-temperature sintering was explored using Bi₂O₃–CuO additives of 1–7 wt% for low-temperature co-fired ceramics applications. For several sintering temperatures, the microwave dielectric properties and chemical resistance of the ceramics were investigated. The CaZrB₂O₆ ceramics with 3 wt% Bi₂O₃–CuO addition could be sintered below 925°C, and the microwave dielectric properties of the low-temperature samples were ɛ_r=10.55, Q × f =87,350 GHz, and τ_f=+2 ppm/°C. The chemical resistance test result showed that both CaZrB₂O₆- and Bi₂O₃–CuO-added CaZrB₂O₆ ceramics were durable in basic solution but were degraded in acid solution.     

Fabrication of Textured Bi3NbTiO9 Ceramics

Highly textured Bi₃NbTiO₉ ceramics are fabricated by normal sintering from molten salt-synthesized plate-like crystallites. Fine Bi₃NbTiO₉ plate-like crystallites (∼1 μm) not only facilitate the densification, but also enhance texture in Bi₃NbTiO₉ ceramics. Weak-agglomerated platelets exhibit higher sinterability and can be densified at a temperature as low as 1000°C, which is about 100°C lower than that of equiaxed powders prepared by directly calcining Bi₃NbTiO₉ precursor. Meanwhile, the orientation degree of textured Bi₃NbTiO₉ ceramics increases with sintering temperature. Highly oriented Bi₃NbTiO₉ (orientation degree of ∼0.91) ceramic with a relative density of ∼92% is obtained at 1150°C. Because of the oriented grain microstructure, textured Bi₃NbTiO₉ ceramic exhibits anisotropic electrical properties.     

Influence of Processing Conditions on the Electrical Properties of CaCu3Ti4O12 Ceramics

The electrical properties of a series of CaCu₃Ti₄O₁₂ ceramics prepared by the mixed oxide route and sintered at 1115°C in air for 1–24 h to produce different ceramic microstructures have been studied by Impedance Spectroscopy. As-fired ceramics are electrically heterogeneous, consisting of semiconducting grains and insulating grain boundaries, and can be modelled to a first approximation on an equivalent circuit based on two parallel RC elements connected in series. The grain boundary resistance and capacitance values vary as a function of sintering time and correlate with the ceramic microstructure based on the brickwork layer model for electroceramics. The large range of apparent high permittivity values for CaCu₃Ti₄O₁₂ ceramics is therefore attributed to variations in ceramic microstructure. The grain-boundary resistance decreases by three to four orders of magnitude after heat treatment in N₂ at 800°–1000°C but can be recovered to the original value by heat treatment in O₂ at 1000°C. The bulk resistivity decreases from ∼80 to 30 Ω·cm with increasing sintering time but is independent of heat treatment in N₂ or O₂ at 800°–1000°C. The origin of the bulk semiconductivity is discussed and appears to be related to partial decomposition of CaCu₃Ti₄O₁₂ at the high sintering temperatures required to form dense ceramics, and not to oxygen loss.     

Effect of V2O5 Doping on the Sintering and Dielectric Properties of M-Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics

The effect of the addition of V₂O₅ on the structure, sintering and dielectric properties of M -phase (Li_{1+ x − y} Nb_{1− x −3 y} Ti _x +4 _y )O₃ ceramics has been investigated. Homogeneous substitution of V⁵⁺ for Nb⁵⁺ was obtained in LiNb_{0.6(1− x )}V_{0.6 x} Ti_0.5O₃ for x ≤ 0.02. The addition of V₂O₅ led to a large reduction in the sintering temperature and samples with x = 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M -phase system and the x = 0.02 ceramics had [alt epsilon]_r= 66, Q × f = 3800 at 5.6 GHz, and τ_f= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V₂O₅-doped M -phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications.     

Effects of La2O3/ZnO Additives on Microstructure And Microwave Dielectric Properties of Zr0.8Sn0.2TiO4 Ceramics

Dielectric ceramics of Zr_0.8Sn_0.2TiO₄ containing La₂O₃ and ZnO as sintering aids were prepared and investigated for microstructure and microwave dielectric properties. Low-level doping with La₂O₃ and ZnO (up to 0.30 wt%) is good for densification and dielectric properties. These additives do not affect the dielectric constant and the temperature coefficient. Dielectric losses increase significantly at additive levels higher than 0.15 wt%. The combined additives La₂O₃ and ZnO act as grain growth enhancers. With 0.15 wt% additives, a ceramic having a dielectric constant, a quality factor, and a temperature coefficient of frequency at 4.2 GHz of 37.6, 12 800, and –2.9 ppm/°C, respectively, was obtained. The quality factor was considerably improved by prolonged sintering.     

Novel Low-Temperature Synthesis of Ferroelectric Neodymium-Doped Bismuth Titanate Nanoparticles

In this study, we report on the synthesis of nanopowders of ferroelectric Bi_3.5Nd_0.5Ti₃O₁₂ ceramic at temperatures below 500°C via a simple chemical method using citric acid as a solvent. The calcined powders were characterized using X-ray diffraction (XRD), differential scanning calorimetry (DSC), and transmission electron microscopy (TEM). Heating the as-dried powders in air first leads to crystallization of the Bi₂Ti₂O₇ phase at ∼310°C, followed by crystallization of the perovskite Nd-doped Bi₄Ti₃O₁₂ phase at ∼490°C as suggested by the peaks in the DSC analysis and confirmed by the evolution of phases in XRD patterns of the powders calcined at various temperatures. TEM of particles calcined at 550°C for 1 h in air showed an average particle size of 50–60 nm. The temperature dependence of capacitance of nanopowders calcined at 700°C for 1 h in air showed a Curie temperature of ∼615°C evincing a ferroelectric transition.     

Determination of the Temperature Coefficient Distribution of Dielectric Ceramics Using Scanning Photothermal Dielectric Microscopy

Two-dimensional images of the distribution showing the temperature coefficient of the dielectric constant for two types of two-phase composite ceramics composed of TiO₂-Bi₂Ti₄O₁₁ and BaTi₄O₉-BaPr₂Ti₄O₁₂ were obtained using scanning photothermal dielectric microscopy. The images of the TiO₂-Bi₂Ti₄O₁₁ ceramic showed that the TiO₂ and Bi₂Ti₄O₁₁ grains had negative and positive temperature coefficients, respectively, and that the macroscopic averaged temperature coefficient of the ceramic was relatively low because of the cancellation of the opposite signs of the coefficients. On the other hand, the images of the BaTi₄O₉-BaPr₂Ti₄O₁₂ ceramic showed that the temperature coefficient of both grains had the same sign (negative), although their absolute values were quite different.     

Densification of Nanocrystalline Yttria by Low Temperature Spark Plasma Sintering

We investigated the densification of undoped, nanocrystalline yttria (Y₂O₃) powder by spark plasma sintering (SPS) at sintering temperatures between 650°C and 1050°C at a heating rate of 10°C/min and an applied stress of 83 MPa. In spite of the low sinterability of the undoped Y₂O₃, a remarkable densification of the powder started at about 600°C, and a theoretical density of more than 97% was achieved at a sintering temperature of 850°C with a grain size of about 500 nm. The low temperature SPS is effective for fabricating dense Y₂O₃ polycrystals.     

Sintering Behavior and Dielectric Properties of Bi3NbO7 Ceramics Prepared by Mixed Oxides and High-Energy Ball-Milling Methods

The sintering behavior and dielectric properties of Bi₃NbO₇ ceramics prepared by the high-energy ball milling (HEM) method and conventional mixed oxides method with V₂O₅ addition were investigated. All the samples were sintered between 840° and 960°C. For the ceramics prepared by the mixed oxides method, the pure tetragonal Bi₃NbO₇ phase formed without any cubic phase. With changing sintering temperature, the dielectric constant ɛ_r lies between 79 and 92, while the Q × f values are between 300 and 640 GHz. The samples sintered at 870°C have the best microwave dielectric properties with ɛ_r=79, Q × f =640 GHz, and the temperature coefficients of resonant frequency τ_f between 0 and −20 ppm/°C. For the ceramics prepared by the HEM, a pure cubic phase was obtained. The ɛ_r changes between 78 and 80 and Q × f were between 200 and 290 GHz.     

Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

BiNbO4-Based Glass–Ceramic Composites for Microwave Applications

The effect of a bespoke glass sintering aid, 0.3Bi₂O₃–0.3Nb₂O₅–0.3B₂O₃–0.1SiO₂ (BN1), developed from the base ceramic composition, BiNbO₄ (BN), on the sinterability, microstructure, and microwave (MW) dielectric properties of BN ceramics has been investigated. Densities >97% theoretical could be achieved at 1020°C for samples with up to 15% BN1 additions. The resulting microstructure was composed of BN laths surrounded by a residual glass phase that contained small fibrous crystals. Some evidence of dissolution of BN crystals was observed. Optimum properties were exhibited for samples with 15 wt% of glass addition sintered for 4 h at 1020°C with a relative permittivity ɛ_r=38, a MW quality factor Q × f ₀=17 353 at 5.6 GHz, and a temperature coefficient of resonant frequency τ_f=−10 ppm/°C. The high Q × f ₀, ɛ_r, and low τ_f, coupled with a relatively low sintering temperature, suggest that the use of bespoke glass sintering aids of this type may have great potential for the fabrication of MW ceramics.     

Extended Defects in ZnO Ceramics Containing Bi4Ti3O12 Additive

Extended defects in ZnO ceramics containing, 6 wt% Bi₄Ti₃O₁₂ were studied by analytical electron microscopy. Apart from basal plane condensation stacking faults, which are also present in as-received ZnO, extended defects related to the presence of Bi₄Ti₃O₁₂ were observed. In samples sintered at 900°C they lie in the basal or in the prismatic     planes and they quite often form closed loops, whereas they form serpentine-shaped boundaries in samples sintered at 1200°C. Evidence is given that they are inversion boundaries. Their TEM image characteristics, as well as the unambiguous presence of Ti at the boundaries, suggest that they are formed due to the presence of 2-D coherent precipitates of Ti-rich (possibly Zn₂TiO₄-type spinel) phase.     

Low Temperature Sintering of Zn3Nb2O8 Ceramics from Fine Powders

A possibility to produce microwave (MW) dielectric materials by liquid-phase sintering of fine particles was investigated. Zn₃Nb₂O₈ powders with a grain size 50–300 nm were obtained by the thermal decomposition of freeze-dried Zn–Nb hydroxides or frozen oxalate solutions. The crystallization of Zn₃Nb₂O₈ from amorphous decomposition products was often accompanied by the simultaneous formation of ZnNb₂O₆. Maximum sintering activity was observed for single-phase crystalline Zn₃Nb₂O₈ powders obtained at the lowest temperature. The sintering of as-obtained powders with CuO–V₂O₅ sintering aids results in producing MW dielectric ceramics with a density 93%–97% of the theoretical, and a Q × f product up to 36 000 GHz at sintering temperature ( T _s)≥680°C. The high level of MW dielectric properties of ceramics was ensured by intensive grain growth during the densification and the thermal processing of ceramics.