低压MOCVD法制备TiO2薄膜的研究

以四异丙醇钛为原料,氧气作反应气体,高纯氮气作载气,采用低压ＭＯＣＶＤ法在单晶Ｓｉ基片上制备出了ＴｉＯ２薄膜,研究了基片温度和氧气流量对ＴｉＯ２薄膜沉积速率的影响,以及基片温度和退火温度对ＴｉＯ２薄膜的结构的影响。采用Ｘ射线衍射和喇曼光谱对ＴｉＯ２薄膜的结构进行分析,实验表明：基片温度在１１０℃～２５０℃时制备的ＴｉＯ２薄膜是非晶态的,在３５０℃～５００℃时制备的ＴｉＯ２薄膜为锐钛矿和非晶态混杂结     

基片温度对TiO2薄膜的微观结构和紫外光电特性的影响

为了制备具有紫外光电特性的TiO2薄膜,采用直流磁控溅射(DC)的方法在不同温度的玻璃基片上制备了TiO2薄膜。通过用X射线衍射(XRD)、扫描电子显微镜(SEM)、X-射线能谱仪(EDS)测试薄膜的晶体结构、表面形貌和薄膜组成成分。结果表明:当基片温度在250℃及以上时,制备出具有锐钛矿结构的TiO2薄膜,并且有较好化学计量比。TiO2薄膜电阻在紫外光照射下的响应时间随基片温度的升高而减少。     

直流反应磁控溅射法制备锐钛矿TiO2薄膜

采用直流反应磁控溅射的方法，溅射高纯钛靶在玻璃衬底上制备了TiO2薄膜。用XRD测试了TiO2薄膜的结构，研究了工艺因素中衬底温度、溅射气压、氧氩气体流量比和退火温度对薄膜结构的影响。实验结果表明：衬底温度高于200℃、溅射气压不高于0．7Pa、氧氩流量比为1／4、退火温度为650℃时，锐钛矿TiO2薄膜更容易结晶。     

CdTe光敏薄膜的制备及性能研究

本文采用高温烧结和真空蒸发制备了ＣｄＴｅ光敏薄膜，探讨了制备工艺对ＣｄＴｅ薄膜性能和结构的影响，得到在基片温度为１３０℃左右制备的ＣｄＴｅ薄膜具有明显的光敏特性，并得到ＣｄＴｅ材料的禁带宽度为１．６３ｅＶ。利用Ｘ衍射对不同基片温度下制备的ＣｄＴｅ薄膜材料进行了结构分析，发现基片温度为１３０℃左右制备的ＣｄＴｅ薄膜具有明显的衍射峰。     

非致冷钛酸锶钡铁电薄膜红外探测器

采用半导体微机械 (Micro Electro MechanicalSystem ,MEMS)技术制备了具有热隔离微桥的 8× 8元非致冷Ba0 .8Sr0 .2 TiO3 薄膜红外探测器列阵原型器件。热释电性能优良的Ba0 .8Sr0 .2 TiO3 薄膜是使用浓度为 0 .0 5M的前躯体溶液、采用Sol Gel制备的。在 5～ 30℃的温度范围内 ,Ba0 .8Sr0 .2 TiO3 薄膜的热释电系数大于 2 0nC cm2 K ,在 16 .8℃处达到最大值 4 1.3nC cm2 K。在 19℃的环境温度下 ,使用 5 0 0K黑体作为红外辐射源 ,测得 10Hz调制频率下 ,探测单元的探测率D 为 5 .9× 10 7cmHz1 2 W-1。对器件结构的进一步改进和测试条件的进一步改善可望获得更高的探测率     

利用表面化学反应生长高功率激光用光学薄膜

用TiCl4和H2O经表面化学反应生长出TiO2而制备出光学薄膜。在240mm直径上的厚度分布不均匀性小于1%。25℃下生长的TiO2薄膜结构为非晶态；当温度增加至400℃时结构变多晶态。二次离子质谱表明在各种生长温度下薄膜中均存留有氯化物。但这种残留氯化物可通过400℃的加热退火去除。25℃下生长的TiO2薄膜的激光破坏阈值在波长1064nm，脉宽1ns时为5J/cm^2。较高温度下生长的TiO2薄膜的破坏阈值将下降。膜中的氯化物对激光破坏阈值并无影响。     

基片温度对氧化钒薄膜结构与电性能的影响

以V2O5粉末为原料采用真空蒸发法结合真空退火还原法在玻璃基片上制备VOx薄膜，调节不同的基片温度获得几组薄膜。运用X-射线衍射(XRD)分析和扫描电子显微镜(SEM)分析发现随着基片温度的不同，薄膜成分、物相以及表面形貌有明显差异。在基片温度为200℃时所得薄膜的电阻温度系数(TCR)达到-0．03／℃，并发现基片温度越高，薄膜在室温附近的电阻率越低，电阻温度系数绝对值也越小。     

温度对飞秒激光沉积ZnO/Si薄膜的结构和性能的影响

通过飞秒脉冲激光(50 fs,800 nm,1 kHz,2 mJ)沉积技术在n型Si(100)单晶基片上制备了ZnO薄膜.详细研究了基片温度变化以及退火处理对ZnO薄膜的结构、表面形貌及光学性质的影响.X射线衍射(XRD)结果表明,不同温度下(20~350℃)生长的ZnO薄膜具有纤锌矿结构,并且呈c轴择优取向;当基片温度为80℃时,薄膜沿(002)晶面高度择优生长;当基片温度为500℃时薄膜沿(103)晶面择优生长,场发射扫描电子显微镜(FEEM)结果表明薄膜呈纳米晶结构,并观察到了ZnO的六方结构.进一步通过透射光谱的测量讨论了基片温度及退火处理对ZnO薄膜光学透射率的影响,结果表明退火后薄膜的透射率增大.     

掺锑二氧化锡薄膜的喷雾热解法制备与热处理

以SnCl4·5H2O和SbCl3为原料,采用喷雾热解法在玻璃基片上制备了掺锑二氧化锡(SnO2∶Sb)透明导电薄膜.用X光电子能谱分析仪(XPS)、X射线衍射仪(XRD)和紫外-可见光吸收谱仪分别对样品进行了表征,且对其结构、电学和光学特性作了研究.实验结果表明:薄膜仍为金红石型结构,在Sb的掺杂量为(1.0～1.5)wt%(质量百分比)和基片温度为500℃时,薄膜方阻为0.8～3.5Ω/□,可见光透过率达80%,红外光反射率达到80%.样品在O2,N2中进行热处理,其电导率呈有规律的变化趋势,热处理温度为550℃时,两种样品的电导率变化曲线上同时出现拐点.     

无水化学沉积法制备Sb2S3薄膜

采用无水化学沉积(NCBD)法在玻璃基片上制备了Sb2S3薄膜。先用无水乙醇将4．0mL浓度为0．1mol／L的SbCl3乙醇溶液稀释至39．6mL,再加入0．4mL浓度为0．5mol／L的CH3CSNH2乙醇溶液,搅拌均匀后垂直放入玻璃基片,在15～18℃温度下沉积72h后,进行退火处理。利用X射线衍射(XRD)和扫描电子显微镜(SEM)对薄膜在退火前后的结构特性进行了研究,利用光学测试计算了薄膜的光学带隙。结果表明,高温退火使薄膜由退火前的非晶态转变为多晶的Sb2S3结构(正交晶系),薄膜的直接光学带隙从1．86eV降低为1.75eV。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks