分布子电子回旋共振等离子体制备高质量二氧化硅薄膜

介绍了一种采用ＤＥＣＲ等离子体在低温下制备高质量ＳｉＯ２薄膜的ＰＥＣＶＤ工艺。讨论了ＤＥＣＲＰＥＣＶＤ工艺中气相Ｏ／Ｓｉ原子比以及沉积速率对ＳｉＯ２薄膜性能的影响。采用包括高能离子分析，椭扁仪，化学刻蚀以及红外吸收谱等物理和化学方法，对所镀ＳｉＯ２薄膜的各种理化特性地分析和研究。     

聚苯胺薄膜的制备及其C—V特殊研究

报导了采用ＰＥＣＶＤ技术制备聚苯胺薄膜及沉积条件对薄膜沉积速率的影响。红外吸收光谱和电容－电压法表征了薄膜的组成及介电特征 。     

PVC／EPDM合金的制备与力学性能研究

研究了采用聚氯乙烯（ＰＶＣ）、三元乙丙橡胶（ＥＰＤＭ）为主体材料，氯化聚乙烯（ＣＰＥ）为增容剂，并配以其他助剂制备ＰＶＣ／ＥＰＤＭ合成。实验结果表明：选择ＰＶＣ３０、ＥＰＤＭ７０、ＣＰＥ３０、白炭黑３０～５０、过氧化二异丙苯（ＤＣＰ）２～３（均为质量份）及适量助剂，可制备性能较好的ＰＶＣ／ＥＰＤＭ合金。ＣＰＥ对ＰＶＣ／ＥＰＤＭ合金的增容效果同乙烯－醋酸乙烯共聚物相近，但优于丁腈橡胶。     

PECVD方法制备SnO2气敏薄膜的电子显微镜研究

通过ＳＥＭ、ＴＥＭ研究了ＰＥＣＶＤ方法制备的ＳｎＯ＿２薄膜的显微结构，讨论了沉积速率与颗粒大小的关系；在Ｓｉ、陶瓷和ＫＢｒ３种不同衬底上沉积的ＳｎＯ＿２薄膜的差异以及退火对ＳｎＯ＿２膜结晶状态的影响。结果表明，ＰＥＣＶＤ方法制备的ＳｎＯ＿２薄膜是非晶态，具有柱状结构。退火使非晶ＳｎＯ＿２膜向着多晶方向转化，演化过程为：非晶大颗粒→超微粒多晶→晶粒长大。     

MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响

为制备符合铁电场效应晶体管（ Ｆ Ｆ Ｅ Ｔ） 及铁电存储二极管（ Ｆ Ｍ Ｄ） 要求的高质量铁电薄膜,采用 Ｐ Ｌ Ｄ （ Ｐｕｌｓｅｄ Ｌａｓｅｒ Ｄｅｐｏｓｉｔｉｏｎ） 工艺, 制备了不同 Ｍ Ｆ （ Ｉ） Ｓ 结构的硅基铁电薄膜系统由 Ｃ－ Ｖ特性的对比分析可见, 影响 Ｃ－ Ｖ 特性的主要因素除了衬底类型、界面特性之外, 还有薄膜的结构设计在此基础上, 为改善铁电薄膜的 Ｃ－ Ｖ 特性提出了合理设想     

MF(I)S结构设计对硅基铁电薄膜系统C-V特性的影响

为制备符合铁电场效应晶体管（ Ｆ Ｆ Ｅ Ｔ） 及铁电存储二极管（ Ｆ Ｍ Ｄ） 要求的高质量铁电薄膜,采用 Ｐ Ｌ Ｄ （ Ｐｕｌｓｅｄ Ｌａｓｅｒ Ｄｅｐｏｓｉｔｉｏｎ） 工艺, 制备了不同 Ｍ Ｆ （ Ｉ） Ｓ 结构的硅基铁电薄膜系统由 Ｃ－ Ｖ特性的对比分析可见, 影响 Ｃ－ Ｖ 特性的主要因素除了衬底类型、界面特性之外, 还有薄膜的结构设计在此基础上, 为改善铁电薄膜的 Ｃ－ Ｖ 特性提出了合理设想.     

H2S敏感薄材料的研究

报导了采用ＰＥＣＶＤ方法制备ＳｎＯ２敏感薄材料,并用浸渍法对薄膜修饰了金属氧化物ＣｕＯ２。实验发现该薄膜材料对Ｈ２Ｓ气体具有很高的灵敏度和选择性,并且具有较快的响应,恢复速度。     

ECR—PECVD制备Si3N4硬质陶瓷薄膜的研究

采用电子回旋共振等离子体化学气相沉积（ＥＣＲ－ＰＥＣＶＤ）技术制备了Ｓｉ３Ｎ４薄膜。利用显微硬度计测定了Ｓｉ３Ｎ４薄膜的表面微硬度。由摩擦测试机对ＳｉＮ４薄膜的摩擦性能进行了测试分析。结果表明，Ｓｉ３Ｎ４薄膜的摩擦系数和单位时间的磨损量较小，该膜具有良好的耐磨性和耐划伤能力。     

钛基-TiN-TiC系梯度薄膜材料的生物摩擦磨损特性研究

在ＳＲＶ试验机上用血清润滑对钛合金及钛基－Ｔｉｎ－ＴｉＣ梯度薄膜与ＵＨＡＭＷＰＥ摩擦副摩擦磨损性能进行了测试与比较,并对其磨损机理进行了分析。研究结果表明,钛基－ＴｉＮ－ＴｉＣ梯度薄膜材料表面硬度得到提高,达到２６３０ＨＶ,与基力,生物耐磨性明显提高,为发展耐磨性好的人工关节材料探索了一条新的途径。     

含Fe聚合物混合薄膜的制备

采用等离子体增强金属有机化合物化学气相沉积技术（ＰＥＭＯＣＶＤ）制备含Ｆｅ聚合物混合薄膜，系统考查了偏压，源物加工热电压，沉积位置对膜沉积的影响，对膜的组成和结构进行了研究。     

Ellipsometric and Rutherford Back scattering Spectrometry studies of SiO(X)N(Y) films elaborated by plasma-enhanced chemical vapour deposition technique

Silicon oxynitride (SiO(X)N(Y)) thin films were deposited by plasma-enhanced chemical vapour deposition technique (PECVD) from silane (SiH4), nitrous oxide (N2O), ammonia (NH3) and nitrogen (N2) mixture. Spectroscopic ellipsometry (SE), in the range of wavelengths 450-900 nm, was used to define the film thickness and therefore the deposition rate, as well as the refractive index as a function of the N2O gaseous flow. While considering the (Si3N4, SiO2, H2 or void) heterogeneous mixture, Maxwell Garnett (MG) theory allows to fit the SE measurements and to define the volume fraction of the different phases. Finally, Rutherford Backscattering Spectrometry (RBS) results showed that x = O/Si ratio increases gradually with increasing the N2O flow, allowing the correlation of the SiO(X)N(Y) films main parameters.     

磁场辅助等离子体增强化学气相沉积

本文根据螺线管线圈内部磁场的分布规律，以及磁场对等离子体内部电子的作用原理，设计了磁场辅助的等离子体增强化学气相沉积（PECVD）系统，并且研究了在PECVD系统中获得均匀磁场的方法。而后，以SiH4和N2为反应气体，在低气压下沉积了SiN薄膜。测量了SiN薄膜的沉积速率，折射率，表面形貌等参数。验证了磁场分布的均匀性，分析了磁场在等离子体增强化学气相沉积系统中的作用。     

Low refraction properties of F-doped SiOC:H thin films prepared by PECVD

Low refractive index materials which F-doped SiOC:H films were deposited on Si wafer and glass substrate by low temperature plasma enhanced chemical vapor deposition (PECVD) method as a function of rf powers, substrate temperatures, gas flow ratios (SiH₄, CF₄ and N₂O). The refractive index of the F-doped SiOC:H film continuously decreased with increasing deposition temperature and rf power. As the N₂O gas flow rate decreases, the refractive index of the deposited films decreased down to 1.378, reaching a minimum value at an rf power of 180 W and 100 °C without flowing N₂O gas. The fluorine content of F-doped SiOC:H film increased from 1.9 at.% to 2.4 at.% as the rf power was increased from 60 W to 180 W, which is consistent with the decreasing trend of refractive index. The rms (root-mean-square) surface roughness significantly decreased to 0.6 nm with the optimized process condition without flowing N₂O gas.     

等离子体增强化学气相沉积设备的研制

本文介绍非晶硅薄膜太阳能电池生产线的核心设备——等离子体增强化学气相沉积(PECVD, Plasma Enhanced Chemical Vapor Deposition)系统,并阐述了其重要地位.非晶硅太阳能电池制造的关键技术是非晶硅薄膜的制备,目前最常见的制备方法是PECVD技术.PECVD技术凭借其低温沉积、可大面积成膜、成膜均匀等特点,在非晶硅薄膜制备方面迅速发展.PECVD系统用于制备非晶硅太阳能电池的关键结构P、I、N硅薄膜层.本文阐述了该设备的结构特点、技术指标、工作原理及工艺过程,对沉积室的结构和配置进行了详细设计计算,非晶硅太阳能电池稳定后的转化效率可达6％.     

Optical Properties of Ca_(0.25)Ba_(0.75)Nb_2O_6 Thin Films Prepared by Spinning Coating

Ca0.25Ba0.75Nb2O6 (CBN25) thin film was prepared on quartz substrate by spinning coating and the optical properties were investigated by a Hitachi U-3410 spectrophotometer and a Metricon 2010 prism coupler. The optical band gap, thickness and refractive index at 632.8 nm of the CBN25 thin film were determined to be 3.65 eV, 529 nm and 2.2258, respectively. The dispersion of the refractive index fitted to Sellmeier relation well and optical waves could be guided into the thin film, which implied that CBN25 thin films were promising for integrated optics and optically active devices.     

Refractive index and etched structure of silicon nitride waveguides fabricated by PECVD

Silicon nitride (SiN_X) thin films were deposited by means of an RF plasma enhanced chemical vapor deposition (PECVD) reactor using SiH₄ and N₂ gases. The refractive index of the SiN thin films increased from 1.5652 to 2.7621 as the SiH₄/N₂ flow ratio was increased from 0.16 to 1.66, since the amount of Si in the film increased, while that of N decreased, as the SiH₄/N₂ flow ratio was increased. The core shape became circular after annealing at 1200 °C. This change is related to a decrease in the viscosity with increasing annealing temperature. This decreased viscosity causes condensation of the core layer due to surface tension, which leads to the change in shape from rectangular to circular. The thickness, refractive index and shape of the films were characterized by ellipsometry, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS).     

利用^4He—O共振散射测量SiOxNy功能梯度薄膜中氧的深度分布

利用＾４Ｈｅ－Ｏ共振散射测量了ＳｉＯｘＮｙ功能梯度薄膜中氧元素的深化度分布。测试样品由计算机控制的等离子增强化学汽相溶积方法制备，所用的反应气体是ＳｉＨ４，Ｎ２Ｏ中ＮＨ３。     

PECVD法低温制备二氧化硅薄膜(英文)

针对金属层间介质以及MEMS等对氧化硅薄膜的需求,介绍了采用等离子增强型化学气相沉积(PECVD)技术,以SiH4和N2O为反应气体,低温制备SiO2薄膜的方法.利用椭偏仪和应力测试系统对制得的SiO2薄膜的厚度、折射率、均匀性以及应力等性能指标进行了测试,探讨了射频功率、反应腔室压力、气体流量比等关键工艺参数对SiO2薄膜性能的影响.结果表明:SiO2薄膜的折射率主要由N2O/SiH4的流量比决定,而薄膜均匀性主要受电极间距以及反应腔室压力的影响.通过优化工艺参数,在低温260℃下制备了折射率为1.45～1.52、均匀性为±0.64%、应力在-350～-16MPa可控的SiO2薄膜.采用该方法制备的SiO2薄膜均匀性好、结构致密、沉积速率快、沉积温度低且应力可控,可广泛应用于集成电路以及MEMS器件中.     

Ellipsometry on sputter-deposited tin oxide films: optical constants versus stoichiometry, hydrogen content, and amount of electrochemically intercalated lithium

Tin oxide thin films were deposited by reactive radio-frequency magnetron sputtering onto In(2)O(3):Sn-coated and bare glass substrates. Optical constants in the 3002500-nm wavelength range were determined by a combination of variable-angle spectroscopic ellipsometry and spectrophotometric transmittance measurements. Surface roughness was modeled from optical measurements and compared with atomic-force microscopy. The two techniques gave consistent results. The fit between experimental optical data and model results could be significantly improved when it was assumed that the refractive index of the Sn oxide varied across the film thickness. Varying the oxygen partial pressure during deposition made it possible to obtain films whose complex refractive index changed at the transition from SnO to SnO(2). An addition of hydrogen gas during sputtering led to lower optical constants in the full spectral range in connection with a blueshift of the bandgap. Electrochemical intercalation of lithium ions into the Sn oxide films raised their refractive index and enhanced their refractive-index gradient.     

Tunable waveguides via photo-oxidation of plasma-polymerized organosilicon films

Plasma-enhanced chemical vapor deposition (PECVD) of dimethylsilane and hexamethyldisilane produced thin films with a refractive index of 1.56 +/- 0.01 at 633 nm. A decrease in the refractive index of approximately 3% was observed after irradiation with UV light from an ArF laser operating at 193 nm. Lower-intensity UV light from a Hg arc lamp induced a slower and controllable decrease in the refractive index. Top-side prism coupling showed the as-deposited organosilicon films to be multimode at 633 nm and single mode at 1550 nm. A model predicted that 30 s of UV irradiation with the Hg arc lamp would decrease the refractive index of the light-guiding film by approximately 0.01, converting the waveguide into single-mode operation across the spectrum of essential wavelengths for microphotonics. Irradiation followed by further coupling experiments confirmed this tunability. Trimming the refractive index of patternable organosilicon polymeric films presents a method of optimizing the coupling performance of PECVD microphotonic interconnect layers postdeposition.