交叉耦合绝热动态触发器及同步动态时序电路

本文提出交叉耦合绝热动态触发器及其同步时序电路综合方法。首先利用文献[1]的电路三要素理论定量描述交叉耦合型绝热锁存器，由绝热主锁存器和从锁存器构成一个单相输入的绝热触发器。在交叉耦合型绝热触发器的基础上，本文提出绝热同步动态时序电路综合方法，用此法设计出绝热8421BCD码错码检测电路（仅用50管），总功耗小于三个绝热ADL非门的功耗，计算机模拟验证本文方法的正确性。     

绝热电路稳定性和三时钟绝热同步时序电路

因为稳定性对绝热同步时序电路实现的重要性，该文首先提出绝热记忆电路的稳定性条件。依据稳定性条件，该文证明三相时钟是满足电路稳定性的最小值。在此基础上该文又提出三相时钟绝热动静态触发器，用此触发器设计出带有反馈清0的绝热可变计数电路。最后用计算机模拟程序检验绝热触发器和可变计数电路的结果。     

可预置绝热触发器的设计及其应用

研究了采用交流能源的可预置绝热触发器。首先对CMOS电路的能量恢复原理进行了分析，在此基础上，提出了性能良好的低功耗绝热触发器，并设置了它的预置控制端，使该触发器可方便地应用于时序电路设计。验征了采用该触发器设计时序系统的实例。SPICE模拟表明，所设计的电路具有正确的逻辑功能及低功耗的优点。     

采用三相交流电源的低功耗绝热时序电路

研究采用三相交流电源的绝热时序电路.首先介绍了采用三相交流电源的双传输门绝热电路并分析其工作原理，在此基础上提出了性能良好的低功耗绝热D、T与JK触发器.使用绝热触发器设计时序系统的实例被演示.SPICE程序模拟表明，设计的电路具有正确的逻辑功能及低功耗的优点。     

静态绝热CMOS记忆电路和信息恢复能力

通过等效电路分析、考虑参数选取和整体时序电路的实现,提出具有信息恢复能力的静态绝热CMOS记忆电路.认为整体绝热电路结构最好融合输入、输出电路和记忆电路、时序电路为一体,由主触发器集合和从触发器集合相互连接构成,其中含有输出和反馈从触发器.采用绝热取样输入电路实现信息记忆单元接收代码和保存信息时将信息单元与外输入隔离.还设计出5421BCD码10进制和7进制可变计数器(带有进位输出从触发器和反馈清0从触发器),用计算机模拟程序检验电路的正确性.     

静态绝热CMOS记忆电路和信息恢复能力

通过等效电路分析、考虑参数选取和整体时序电路的实现 ,提出具有信息恢复能力的静态绝热 CMOS记忆电路 .认为整体绝热电路结构最好融合输入、输出电路和记忆电路、时序电路为一体 ,由主触发器集合和从触发器集合相互连接构成 ,其中含有输出和反馈从触发器 .采用绝热取样输入电路实现信息记忆单元接收代码和保存信息时将信息单元与外输入隔离 .还设计出 5 4 2 1BCD码 10进制和 7进制可变计数器 (带有进位输出从触发器和反馈清 0从触发器 ) ,用计算机模拟程序检验电路的正确性     

静态绝热CMOS记忆电路和信息恢复能力

通过等效电路分析、考虑参数选取和整体时序电路的实现,提出具有信息恢复能力的静态绝热CMOS记忆电路.认为整体绝热电路结构最好融合输入、输出电路和记忆电路、时序电路为一体,由主触发器集合和从触发器集合相互连接构成,其中含有输出和反馈从触发器.采用绝热取样输入电路实现信息记忆单元接收代码和保存信息时将信息单元与外输入隔离.还设计出5421BCD码10进制和7进制可变计数器(带有进位输出从触发器和反馈清0从触发器),用计算机模拟程序检验电路的正确性.     

绝热无比型动态触发器和同步时序电路综合

该文从电路三要素理论出发研究低功耗电路，定量描述绝热无比型动态记忆电路。绝热无比型动态触发器利用电容接收和保存信息，避免目前绝热电路中电容上的信息得而复失的现象，其中绝热D和T'触发器只用6管，带‘与或非’输入的绝热D触发器只用9管。在上述理论基础上该文提出绝热无比型动态同步时序电路综合方法，用此法设计出绝热5421BCD码十进制计数器，仅用32管，总功耗小于一个PAL－2N四位二进制计数器的功耗，计算机模拟验证该文方法正确。     

采用“归D法”的时序电路CAA

本文提出了各类触发器分解成Ｄ触发器的分解逻辑表达式，利用它把其它类型触发器的时序电路转换成了Ｄ触发器时序电路（简称＂归Ｄ法＂）。采用＂归Ｄ法＂编制的时序电路ＣＡＡ（计算机辅助分析）程序，适用于各类触发器时序电路的分析，这样做既简化了软件编程，又提高了分析效率。     

采用“归D法”的时充电路CAA

本文提出了各类触发器分解成Ｄ触发器的分解逻辑表达式，利用它把其它类型触发的时序电路转换成了Ｄ触发器时序电路（简称“归Ｄ法”）。采用“归Ｄ法”编制的时序电路ＣＡＡ（计算机辅助分析）程序，适用于各类触发器的时序电路的分析，这样做既简化了软件编程，又提高了分析效率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.