基于复数权神经元的布尔函数稳健学习算法

复数权神经元由于引入了多阈值逻辑而具有更强的性能.文中根据其数学模型,结合二进感知器神经元稳健设计概念,提出了该神经元的稳健性数学定义,并根据定义,得到了简单逻辑和异或逻辑的单个神经元稳健实现方案.然后根据该方案提出了任意复杂布尔函数稳健实现算法,同时证明了该算法的正确性.最后通过具体实例演示该算法实现布尔函数的过程和...     

一种基于符号逻辑的神经元模型和电路实现

为了实现基于符号逻辑的神经网络系统,本文定义了一种逻辑神经元模型,并采用了电流型CMOS工艺实现这种神经元电路的各种逻辑功能,最后通过电路模拟,证明设计的正确性。     

一种基于符号逻辑的神经元模型和电路实现

为了实现基于符号逻辑的神经网络系统,本文定义了一种逻辑神经元模型,并采用了电流型ＣＭＯＳ工艺实现辽种神经元电路的各种逻辑功能,最后通过电路模拟,证明设计的正确性。     

二进神经网络的最稳健设计

本文基于对ｎ维超立方体的分割超平面应处在任两个不同类相邻顶点连线的中点、且与连 的思想，设计了能够实现逻辑功能的具有次强和最强稳健能力的我层前向神经网络、给出了稳健神经元之间的连接权和偏置值的设计规则，并服运用这一规则能够设计出既能实现所希望逻辑功能，又具有对输入数据的次强和最强稳健能力的前向网络，相应的网络规模分别为ｎ－ｋ－１和ｎ－ｎ－ｋ－１由于所构造的网络其连接权值只可能是＋１、－１、０，使得     

多值逻辑基本运算的神经网络实现

多层感知器神经网络是典型的人工神经网络模型。算后，将其推广到多值逻辑。根据感知器神经元的分类特点，系统中的基本运算，从而也实现了任意三值逻辑函数。本文在分析二值感知器神经网络实现二值数字逻辑运采用三层前向稳健感知器神经网络实现了三值格代数。     

截断斜坡函数多值逻辑神经元

基于截断斜坡函数实现方便和多值逻辑变量信息含量高的特点,提出了一种多值逻辑神经元,并给出了相应的训练方法和电路实现方案.该神经元可应用于模式识别、降低神经元网络中的神经元数量和提高训练速度.     

基于区间值模糊逻辑神经元的区间值模糊C-均值聚类神经网络

本文提出了一种基于区间值模糊逻辑神经元的三层前馈自组织学网络模型，用来实现区间值模糊Ｃ－均值聚类分析，网络第一，二层神经元的输入，输出和权连续取值属于区间值模糊集Ｉ（０，１）第一层神经元为区间值线性神经元；第二层为区间值模糊相等神经元，其功能是实现输入样本与各类的匹配运算，本文采用区间值模糊相等关系作为匹配的指标，为了定义区间值模糊相等神经元，本文在点值模糊相等关系的基础上推导了区间值模糊相等关系     

一个脉冲发放型人工神经元

本文首先总结了生物神经元的一些基本特性,对调节联接的霍伯(Hebb)规则提出了新的见解,得出生物神经元的总和过程是间歇式的结论,通过对支配神经元活动的Hodgkin-Huxley方程进行合理简化得到一个具有类似于生物神经元动作方式的人工神经元;给出了这一模型的电路实现和解析解 ;最后,研究了该模型组成的多层网络实现异或分类问题.该模型具有生物神经元的主要特性,如总和效应、潜伏期和不应期等,并且兼顾到在工程上其容易由硬件、软件实现等问题.     

基于FPGA的神经元相关性分析的设计与实现

利用Verilog HDL语言,Xilinx的ISE平台实现了神经元相关性分析的设计.首先对神经元相关性分析的理论和软件实现的方法进行了简单介绍,然后对相关性分析的主要模块进行了设计,最后用ModelSim进行了功能仿真和时序仿真,用ISE做了逻辑综合与实现以及性能分析.所选FPGA器件xc5vlx220-2ff1760逻辑资源消耗只占7%,最高时钟频率可以达到240Mhz左右.只需要48个时钟周期就可以实现两个神经元之间相关性的计算,也就是200ns.64通道的情况下需要0.4ms,而用软件实现的方法至少需要几秒的时间,这样可以对神经元之间的相关性进行实时性分析.     

强混叠模式下基于神经元捕获/抑制原理的分类器设计

目前的许多分类器设计方法,如多层感知器网络(MLP)、支持向量机(SVM)、相关向量机(RVM)、径向基函数网络(RBF)等,实际是非线性映射加线性分类的方法,即将输入空间的非线性可分问题经非线性映射到另一空间,在那一空间实现线性分类.本文则开拓性的运用脉冲耦合神经网络神经元的点火捕获的思想,提出了一种基于耦合神经元点火捕获/抑制特性的分类器设计方法,使一类样本对应神经元总是较其它类样本对应神经元先点火以实现对样本的有效分类.所设计的分类器可实现对样本空间中任意复杂分布训练样本的非线性稳健分类,特别是有效实现复杂混叠模式的模式稳健分类,大量复杂混叠模式分类问题的仿真实验验证了本文方法的有效性和可行性,并应用于微波暗室实测一维距离像数据的自动目标识别中.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.