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有机电致发光器件(OLEDs)的研究不断地深入,其亮度、效率、寿命等发光特性也得到了较丸也提高。近些年,Forrest等人提出有机多层量子阱结构(OMQWs)的概念,随后又将其应用到OLEDs中,从而增强了具有这种结构的器件的发光特性。本文从这种结构的分类、结构表征、吸收特性、光致发光及电致发光等特性和应用方面进行讨论,进而总结了有机电致发光主要应用和研究进展,并提出存在的问题及展望。 相似文献
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纳米半导体与聚合物复合形成的新型电致发光材料,在大规模平面显示和移动通信等现代信息显示方面具有广阔的应用前景。在这种复合型电致发光材料体系中,聚合物不仅可用作LED器件的粘接剂,而且在用作无机发光层的分散介质时,对纳米晶粒的表面可以起纯化作用,防止发光猝灭,从而通过控制和调节纳米晶粒的含量和尺寸来调节发光强度和波长。当采用共轭聚合物与纳米半导体形成复合体系时,还可以通过共轭聚合物与纳米半导体间的电子转移来调节发光层的电子结构及其发光性能。利用纳米半导体的高电荷输运性,也可以增强电致发光聚合物发光层的效率。 相似文献
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白光有机电致发光器件在显示和照明领域有着极大的应用前景,受到人们广泛的关注。本文对白光有机电致发光器件的结构、工作原理、工艺流程、存在的问题等进行了简单的概述,力求总结出制备白光有机发光器件的新途径。 相似文献
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有机薄膜电致发光的研究及现状 总被引:1,自引:0,他引:1
有机薄膜电致发光(OTFEL)由于具有许多独特的优点而成为当今发光领域研究的热点,具有十分诱人的应用前景,本文从其发展过程,发光原理,发光材料,器件结构等几个方面作了概括和论述。 相似文献
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有机薄膜电致发光(OTFEL)由于具有许多独特的优点而成为当今发光领域研究的热点,具有十分诱人的应用前景。本文从其发展过程、发光原理、发光材料、器件结构等几个方面作了概括和论述。 相似文献
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本文综述了有机电致发光板(EL)的进展,并着重介绍了用有机发光二极管(O-LED)研制点矩阵显示器的近况,本文还讨论了有机和无机EL的优缺点,要想和有机EL技术成高信息量彩色平板显示器,尚需解决其稳定性问题。 相似文献
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无机电致发光平板显示是重要的平板显示技术之一.总结了最近几年国际上无机EL领域理论研究和产品开发方面的研究进展,分析了当前无机EL产业状况、国内外存在巨大技术差距以及国内一些单位在产业化方面的努力相继失败的原因,指出了无机EL领域一些重要的科学与技术问题,并提出自己的看法. 相似文献
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The preparation and properties of direct current electroluminescent (dc EL) materials using manganese-activated ZnS powders for a flat-panel TV display are described. The firing process, the copper coating process, and the ferming process have been investigated. Suitable powder phosphors for the display panel contain 0.1-0.5 wt % manganese and 0.25-0.35 wt % copper coated on the ZnS powder surface. Although the powder-type dc EL still has low luminous efficiency, the light output can be increased to a useful level by exciting the panel with voltage pulses of high peak power. The crosstalk effect in the display panel can also be suppressed, since the brightness is very nonlinear with respect to the applied voltage. The sealing of the panel with silicone oil is effective in lengthening the life of the panel. An experimental dc EL panel with a 13-in diagonal and 50 176 picture elements has been fabricated, capable of reproducing broadcast TV images. These images have a highlight brightness of 10 fL, a contrast ratio of 20:1, a limiting resolution of about 150 TV lines in both horizontal and vertical directions, and a gray-scale capability of 16 steps. 相似文献
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《Electron Devices, IEEE Transactions on》1980,27(9):1784-1789
The operation of the thin-film transistor-controlled electroluminescent (TFT-EL) display panel was analyzed and the power dissipation under different conditions calculated. A hybrid electronic multiplier was used to measure the dissipation of individual electroluminescent (EL) cells, TFT-EL elements, and TFT-EL panels. The results of these measurements and the luminous efficiency of the EL material are presented. 相似文献
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KANG Hao LI Rong-yu YANG Xin 《半导体光子学与技术》2007,13(3):225-229
The increasing use of color terminals for personal computers has raised a demand for video graphic adapter(VGA)-format panel displays. Since only monochrome(ZnS : Mn) electroluminescence(EL) displays of suitable size and speed are available, lack of colors has to be replaced by grayscale in the first place. There are two basic driving methods to achieve grayscale in thin-film EL displays: pulse amplitude modulation(PAM) method and pulse width modulation(PWM) method. But there are serious disadvantages of the two traditional methods. For the former method, the high voltage PAM ICs are too expensive to produce the grayscale EL display in bulks and the driver integrated circuit(IC) is complex. Though the PWM method has good grayscale display quality, the hardware implementation is too complex. A new driving method with which the width and the amplitude of the pulse can be modulated and simultaneously the challenge can be solved efficaciously is presented. 相似文献
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Visible electroluminescence (EL) from stain-etched porous silicon (PoSi) films is presented. The PoSi thin layers (~200 nm) were obtained by stain-etching of B-doped 6-16 Ω-cm (100) crystalline Si in a HF:HNO3:H2O (1:3:5) solution. Indium tin oxide (ITO) films of ~2500 Å were used to form a Schottky contact. Visible EL was observed at room temperature from the diode under forward bias. EL onset bias as low as 3 mA/cm2 was measured. The EL, with an emission peak at ~640 nm, is similar to the photoluminescence under UV excitation, indicating the same luminescent centers. This result demonstrates a promising and simple technique for the fabrication of PoSi-based light emitting diodes and flat panel display devices 相似文献