纳米级电子束曝光机用图形发生器

为满足纳米级电子束曝光系统的要求，设计了高速图形发生器。该图形发生器包括硬件和软件两部分。硬件方面主要是利用高性能数字信号处理器(DSP)将要曝光的单元图形拆分成线条和点，然后通过优化设计的数模转换电路，将数字量转化成高精度的模拟量，驱动扫描电镜的偏转器，实现电子束的扫描。通过图形发生器还可以对标准样片进行图像采集以及扫描场的校正。配合精密定位的工件台和激光干涉仪，还可以实现曝光场的拼接和套刻。利用配套软件可以新建或导入通用格式的曝光图形，进行曝光参数设置、图形修正、图形分割、临近效应修正等工作，完成曝光图形的准备。结果表明，该图形发生器能够与整个纳米级电子束曝光系统协调工作，刻画出纳米级的图形。     

基于TMS320C6713的电子束曝光机图形发生器的硬件设计

提出了一套功能较为完备的新型扫描电子束曝光机图形发生器的硬件设计方案.方案采用TMS320C6713芯片作为核心单元,并由USB2.0接口电路、存储器扩展电路、标记检测控制电路、曝光控制电路和束闸控制电路构成.方案具有数据处理能力强、速度快、接口方便等优势,克服了传统图形发生器单纯依靠软件完成、速度慢、精度低、工作不稳定的缺点.     

EM-5009b激光图形发生器漏曝和曝光移位现象研究

针对EM-5009b激光图形发生器出现漏曝、曝光移位问题，通过实验和分析。总结了产生漏曝、曝光移位现象的一些原因。     

图形发生器单元圆生成算法及填充策略

随着微电子技术的发展，某些特殊器件如集成光栅的生产，需要进行圆弧图形的曝光。在Bresenham算法的基础上，提出了一种圆生成算法及填充策略。该方法通过设置决策函数和迭代增量，判断最接近圆函数曲线的象素点，从而得到和圆函数图形逼近较好的曲线图形。这种算法应用于以DSP芯片为基础的电子束曝光机图形发生器上，可以快速又较好地得出圆图形单元的各象素点，输出信号至D／A，通过信号转换控制偏转放大器绘制图形。此算法适于硬件完成，简化了数据处理过程，并提高了图形绘制速度和图形精度。     

多目的半导体曝光装置TZ—310

在半导体器件制造最重要的工艺——曝光工序中,将掩模制作功能——图形发生器与重复照像、缩小投影曝光和光的直接作图曝光四种功能紧密地集中统一在一台装置上的“多目的半导体曝光装置TZ—310”开始出售了。     

电子束曝光机特殊图形辅助发生器

介绍电子束曝光机的图形发生器系统中用以解决硬件化高速扫描特殊图形和硬件过于复杂的特殊图形辅助发生器，叙述了它的工作原理，硬件配置和软件设计及特殊图形的描述参数和计算公式。     

GCA3600F图形发生器数据处理技术的改进与应用

为了进一步挖掘传统光学曝光的潜力、扩展其应用范围、提高其曝光效率,对GCA3600F光学图形发生器数据处理技术开展了研究,其中包括对曝光数据的优化处理技术以及复杂图形切割算法的研究,并编制了相应的软件补偿程序.结果表明,该技术可有效提高光学图形发生器曝光效率,减少机器设备的磨损,提高光刻掩模版的精度.     

基于CPLD的面阵CCD图像传感器驱动时序发生器设计

在分析FTT1010-M型面阵CCD图像传感器驱动时序关系的基础上,设计了可调曝光时间的面阵CCD图像传感器驱动时序发生器.选用CPLD器件作为硬件设计平台,使用VHDL语言对驱动时序发生器进行了硬件描述.采用Quartus II对所设计的驱动时序发生器进行了功能仿真,并针对ALTERA公司的EPM7160SLC84-10进行了RTL级仿真及配置.系统测试结果表明,所设计的驱动时序发生器不仅可以满足面阵CCD图像传感器的驱动要求,而且还能够调节其曝光时间.     

基于DSP图形发生器曝光算法的研究

新型图形发生器使用DSP控制曝光过程，因此要求DSP程序高效地控制电子束实现图形的高精度扫描。而以往的算法(包括Bresenham算法)无法满足电子束扫描的特殊性，因此提出一种DSP实现曝光的算法。分析了Brcsenham算法的缺陷，同时对提出的新算法进行工作效率的理论分析和曝光数据的采集对比，结果证明该算法是一种能够保证精度和效率的算法。同时还探讨了斜矩形不分割的曝光算法。     

多动虚拟化技术助力智能手机甸大众市场渗透

低盛本智能手机方案通常是将基带和应用处理器内核集成在一起，通过单芯片里不同的核完成不同的功能。而有了虚拟机技术，单核架构处理器也能用来构建智能手机，并进一步降低手机硬件成本。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.