子阱及非对称势垒对GaN RTD电学特性的影响

利用Silvaco软件对Al0.2Ga0.8N/GaN共振隧穿二极管(RTD)进行仿真,重点研究了InGaN子量子阱结构及相应非对称势垒结构设计对其电流特性的影响。对比分析了子量子阱结构中InGaN的In组分和子阱厚度对RTD微分负阻(NDR)特性的影响,得出了提升器件性能的最佳参数范围。为了克服Al0.2Ga0.8N/GaN RTD势垒低对器件电流峰谷比(PVCR)的影响,在子量子阱结构的基础上引入了非对称势垒结构设计,通过改变收集区侧势垒的高度和厚度,将AlGaN/GaN的Ip和PVCR由基本结构的0.42 A和1.25,提高到了0.583 A和5.01,实现了器件性能的优化,并为今后的器件研制提供了设计思路。     

非对称InGaN多量子阱发光二极管的发光分布和空穴输运

为研究多量子阱中的发光分布和空穴输运,制备了非对称InGaN/GaN 多量子阱（MQW）发光二极管。在电注入下,具有wNQW有源区结构（靠近p的第一个阱QW1比其他QWs较宽）的样品只有一个来自QW1的发光峰,而具有nWQW有源区结构的样品具有一个短波长发光峰和一个长波长发光峰,分别来自QW1和后面的QWs。增加QW1和后面QWs之间的势垒厚度,来自后面QWs的长波长发光峰减弱,总的发光强度也随之减弱。结论是具有nWQW和薄势垒的非对称耦合MQW结构可以改善空穴输运,从而增强后面QW的发光,提高LED内量子效率。     

磁性材料、超导材料和器件

TM27 2003020047处理具有任意形状势垒的磁性隧道结中电子输运的一个简单方法/谢征微,李伯减(中国科学院物理所)“物理学报一2002,51(2)一399一405在引。nczewski自由电子模型的基础上.提出了一个可用于处理具有任意形状势垒的磁性隧道结中磁电子输运的简单方法,并以三种常见构形的势垒,即梯形势垒,计入了镜像势的梯形势垒和抛物线势垒为例,讨论了势垒形状对隧穿磁电阻及其随偏压变化的影响.图6参16(午)TM271 2003020048纳米Fe一1 n203颗粒膜的磁性和巨磁电阻效应/张林,刘宜华,黄宝歌(山东大学)“科学通报一2002,47(19)一1465一1468采用射…     

任意势垒隧穿几率的一种高精度数值算法

基于龙格-库塔算法求解薛定谔方程,并对获得的数值结果进行分析得出精确的量子隧穿几率.通过适当的处理,该方法适用于任意势垒的情形.利用该方法计算了多种结构的隧穿几率,如抛物线型势垒及双势垒,获得了高精度的隧穿几率.同时计算了MOS结构的隧穿电流密度,结果与Fowler-Nordheim隧穿完全吻合,表明了该方法的适用性.     

任意势垒隧穿几率的一种高精度数值算法

基于龙格-库塔算法求解薛定谔方程,并对获得的数值结果进行分析得出精确的量子隧穿几率.通过适当的处理,该方法适用于任意势垒的情形.利用该方法计算了多种结构的隧穿几率,如抛物线型势垒及双势垒,获得了高精度的隧穿几率.同时计算了MOS结构的隧穿电流密度,结果与Fowler-Nordheim隧穿完全吻合,表明了该方法的适用性.     

一种新型小型化功分器

文章提出了一种新的功分器分析方法。该方法利用任意两个隔离端口之间的反射和隔离散射参数,严格推导了任意两个隔离端口应该满足的以Y矩阵表示的约束条件。同时提出了先功分电路,后隔离电路的设计流程,为器件的小型化设计指引了方向。与传统的奇/偶模方法相比,该方法对于非对称功分器提供了更严谨的分析过程。该方法也适用于分析任意端口数、任意端接实阻抗、任意功分比的功分器、正交和180°耦合器设计问题。利用该方法,在微带PCB(印刷电路板)上,制作了一款功分器。通过对比理论计算、全波仿真以及测量结果,表明设计的小型化功分器性能良好。     

非均匀介质中的非对称耦合传输线的阻抗计算

本文导出了一组普遍的在非均匀介质中的非对称耦合线的方程,用矩量法计算了耦合传输线的二种基本模式阻抗特性。编制了通用计算机程序,可以计算任意介质中的任意结构形状的耦合传输线的阻抗参数。     

电子隧穿问题的数值算法

文中给出了计算电子隧穿问题的一种新的数值方法，该方法适用于任意形状的一维势垒。在该算法中，首先用Ｎｕｍｅｒｏｖ算法注解薛定谔方程，然后再利用所得结果计算电子透射系数，为检测算法的精度，计算了电子对矩形双势垒及三角形势垒的透射系数，并与相应的精确解做了比较，结果表明该方法具有很高的精度。     

利用FN振荡电流测量超薄栅MOS结构的栅氧化层厚度

给出了一种利用 FN振荡电流的极值测量超薄栅 MOS结构的栅氧化层厚度和电子在栅氧化层导带中的有效质量方法 .利用波的干涉方法来处理电子隧穿势垒的过程 ,方便地获得了出现极值时外加电压和栅氧化层厚度、势垒高度、电子的有效质量之间的关系 .这种方法的最大优点是精确和简便 ,并可方便地应用于任意形状的势垒和势阱     

势垒层对黑硅光电探测器性能影响的研究

讨论势垒层Si3N4的引入对黑硅光电探测器光电性能的影响。探测器采用金属一半导体一金属（MSM）器件结构在黑硅层和电极间增加一层势垒层以提高肖特基势垒,从而减低器件的暗电流。实验表明,在相同的光照情况下,有势垒层的探测器暗电流比无势垒层的探测器暗电流至少低1个数量级,且势垒层厚度增加30nm其暗电流降低约1个数量级,而...     

不对称势垒对共振隧穿二极管I-V特性的影响

利用Airy函数和传输矩阵方法计算了不对称势垒厚度的InP基AlAs/InGaAs/AlAs DBS结构在偏压情况下的共振透射系数,并通过材料生长和器件工艺制作得到了共振隧穿二极管的直流I-V特性。在峰值电流密度为132kA/cm2下,获得了17.84的电流峰谷比。测试结果还表明不对称势垒厚度的RTD在偏压情况下,当电子从较薄势垒向较厚势垒穿透时,更容易获得高的电流峰谷比,反之可获得较大的负微分电阻电压区域。     

Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers

A semiconductor-laser design is proposed in which parasitic recombination in the waveguide region is suppressed by means of double asymmetric barriers adjacent to the active region. Double asymmetric barriers block the undesirable transport of one type of charge carrier while allowing the transport of the other type of carrier. The spacer in the double asymmetric barrier can serve to compensate the elastic strain introduced by the barrier layers as well as to control the energy spectrum of charge carriers and, thus, the transmission coefficient. By the example of a laser with Al_0.2Ga_0.8As waveguide layers, it is shown that the design with double asymmetric barriers makes it possible to suppress undesirable electron transport by a factor of 4 in comparison to the design using single asymmetric barriers.     

On superluminal tunneling

Photonic tunneling is currently of theoretical and applied interest. In a previous review, faster-than-light (i.e. superluminal) photonic tunneling was discussed (Progr. Quantum Electron. 21 (1997) 81). Recently, superluminal photonic pulse transmission and reflection have been measured at microwave and infrared frequencies. It seems clear that superluminal photonic and electronic devices will become a reality in the near future.

In the present report, we introduce new experimental and theoretical data on superluminal tunneling and reflection. Data of reflection by barriers have evidenced the nonlocal nature of tunneling. Asymmetric barriers have revealed a strange asymmetric reflection behavior in time.

The principle of causality is not violated by a superluminal speed even though the time duration between cause and effect can be shortened compared with a luminal interaction exchange. An empirical relationship independent of the barrier system is found for the photonic tunneling time. This relation seems to be universal for all kind of tunneling processes in the case of single opaque barriers. We show that the superluminal velocity can be applied to speed up photonic modulation and transmission as well as to improve microelectronic devices.     

MCRB for timing,phase and frequency estimation in presence of self-phase modulation for low-rate optical communication

In this paper we derive the theoretical lower bound, namely Modified Cramér-Rao bound (MCRB) for symbol timing, phase and frequency offset in presence of nonlinear self-phase modulation (SPM) in a dispersion compensated long-haul coherent fiber link. The system model considers multiple span of fiber each associated with optical amplifier. Dual polarization multilevel quadrature amplitude modulation is opted for data transmission to support the data rate lower than 10 Gigabaud. We find that SPM induces underdamped oscillation on the MCRB bounds depending on the pulse shapes (symmetric and asymmetric) utilized. In presence of realistic low-pass filter at the receiver front end, the MCRB degrades significantly due to SPM. We also show the effect of SPM on symbol error rate degradation. Simulation is carried out with symmetric return-to-zero pulse with duty cycles of 33, 67 % and self-generated asymmetric pulse to verify the theoretical results.     

Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability

A method for enhancing the temperature stability of injection lasers that is based on introducing asymmetric barrier layers on each side of the quantum-confined active region is suggested. The asymmetric barrier layers prevent electrons from escaping from the active region into the part of the waveguide region where holes are injected and prevent holes from escaping into the part of the waveguide region where electrons are injected. Parameters of the layers that allow implementation of the asymmetric-barrier design using pseudomorphic structures grown on GaAs substrates are determined. The calculation of the threshold characteristics of these laser structures demonstrates that suppression of electron-hole recombination outside the active region attained due to the use of asymmetric barrier layers leads to a significant decrease in the threshold current and an increase in the characteristic temperature of this type of lasers.     

一种实现中红外非对称传输的手征超表面设计

为了研究手征超表面在中红外波段的非对称传输特性,设计了一种基于L型结构的手征超表面单元.利用CST电磁软件进行仿真分析,结果表明在68.92～88.68 THz范围内非对称传输参数大于0.8,在73.25 THz处非对称传输参数达到极值为0.88,由此可知该结构在中红外波段具有良好的非对称传输特性;通过分析表面电流分布...     

Theoretical analysis of confined quantum state GaAs/AlGaAssolid-state photomultipliers

A detailed theoretical analysis of the design considerations of a solid-state photomultiplier based on avalanche multiplication of carriers out of confined quantum states is presented. Since these devices are unipolar, much lower noise and higher speed of performance are anticipated as compared with interband avalanche photodiodes. As an example of the design criteria for confined-state photomultipliers, a GaAs/Al_0.32Ga_0.68As multiquantum well structure is analyzed as to impact ionization rate, gain, dark current, and multiplied dark current. It is found that the highest gain is achieved in an asymmetric quantum well structure in which the second barrier height is half as large as the initial barrier height. The gain is further evaluated for a symmetric quantum well device. The effects of the applied electric field, quantum well doping concentration, and layer widths on device performance are examined     

Multilayer Heterostructures with Asymmetric Barriers as New Components for Nonlinear Transmission Lines to Generate High-Frequency Oscillations in the 100-300 GHz Range

A new method of generation of RF radiation in the range 100-300 GHz due to direct conversion of a video pulse into a radio pulse in nonlinear transmission line (NLTL) based on multilayer heterostructure (MLHS) with asymmetric barrier is suggested. Calculations of the capacitance-voltage characteristics and high-frequency loss in MLHS, and also of the MLHS-based NLTL dimensions are carried out with an analytical study and computer modeling of the shock wave propagation in NLTL. Some advantages of the considered method of generation in comparision with such solid state sources as Gunn devices, IMPATT diodes or different types of frequency multipliers are discussed.     

Binding energies of shallow impurities in asymmetric strained wurtzite AlxGa1-xN/ GaN/Aly Ga1-yN quantum wells

The ground state binding energies of hydrogenic impurities in strained wurtzite AlxGa1-xN/GaN/AlyGa1-y>N quantum wells are calculated numerically by a variational method. The de-pendence of the binding energy on well width, impurity location and Al concentrations of the left and right barriers is discussed, including the effect of the built-in electric field induced by spontaneous and piezoelectric polarizations. The results show that the change in binding energy with well width is more sensitive to the impurity position and barrier heights than the barrier widths, especially in asymmetric well structures where the barrier widths and/or barrier heights differ. The binding energy as a function of the impurity position in symmetric and asymmetric structures behaves like a map of the spatial distribution of the ground state wave function of the electron. It is also found that the influence on the binding energy from the Al concentration of the left barrier is more obvious than that of the right barrier.     

Parasitic Recombination in a Laser with Asymmetric Barrier Layers

Semiconductors - In a laser with asymmetric barrier layers (ABLs) two thin barrier layers adjacent to the active region on both sides are intended to prevent bipolar population of the waveguide...