ITO透明导电膜制备工艺研究

电子器件柔性化、超薄化对柔性ITO透明导电膜需求越来越为迫切,但是由于ITO薄膜本身性质局限和柔性衬底问题,使得ITO透明导电膜的光电性能极容易受到影响。以PET柔性基材制备ITO膜为例,从ITO透明导电膜膜系结构出发,研究就ITO透明导电膜的制备工艺,对提高ITO透明导电膜的光电性能进行简要的探讨。     

用电子束蒸发法低温无损情况下在有机柔性衬底上制作ITO膜及其性能研究

在有机材料柔性衬底上沉积ITO膜,需要在低温及无损伤(即避免离子轰击及热损伤等)情况下进行.为满足此要求,采用电子束蒸发法来实现在PI衬底上沉积ITO膜,对沉积参数如电子束特性、氧分压及衬底温度对薄膜质量的影响进行了研究;对薄膜结构、表面形貌、电学及光学特性进行了检测.最后,在PI衬底上获得高质量ITO膜,其可见光透过率超过90%,电阻率低于5×10-4 Ω*cm.     

从专利分析的角度看我国FOLED技术的发展

正一、引言柔性有机发光二极管~([1])(Flexible Organic Light Emitting Diodes,FOLED)是一项基于柔性衬底的自有光源显示屏技术,所述柔性衬底可以是柔性聚合物膜,金属薄片或者超薄玻璃。FOLED的制备过程一般包括如下步骤:在柔性衬底上涂覆作为阳极的氧化铟锡(Indiumtinoxide,ITO)透明导电膜,然后将有机发光和载流子传输材料以薄膜的     

柔性透明导电薄膜及其制备技术

在柔性衬底上制作的器件具有重量轻、柔软等优点,所以柔性透明导电薄膜成为当前的研究热点.柔性衬底存在不耐高温的缺点,从而限制了柔性透明导电薄膜的性能.总结了近年来对柔性衬底材料处理的方法,并介绍了柔性透明导电ITO薄膜和ZAO薄膜,分析了它们的研究现状,同时讨论了柔性薄膜的制备方法,最后对柔性透明TCO领域未来的研究和应用工作进行了展望.     

衬底温度对ITO和ITO:Zr薄膜性能的影响

利用双靶共溅法在玻璃衬底上沉积了Zr掺杂ITO薄膜,对比研究了在不同衬底温度下ITO和ITOZr薄膜性能的变化.XRD和AFM分析表明,ITOZr比ITO薄膜具有更好的晶化程度和较低的表面粗糙度,Zr的掺入促进薄膜晶化的同时导致了(222)晶面向(400)晶面取向的转变.室温下Zr的掺杂显著改善了薄膜的光电性能,方阻由260.12 Ω降为91.65Ω,光学透过率也有所上升.随着温度的上升,方阻可达到10 Ω,薄膜也表现出明显的"B-M"效应,通过直接跃迁的模型得出ITOZr比ITO薄膜具有更宽的光学禁带.共溅法制备的ITOZr薄膜比传统的ITO薄膜展现了更好的综合性能.     

衬底温度对柔性硫化锌薄膜结构与光学性能的影响北大核心CSCD

本文利用射频磁控溅射薄膜沉积技术在柔性聚酰亚胺(PI)、氧化铟锡(ITO)玻璃及石英玻璃衬底上制备了透明硫化锌(ZnS)薄膜。通过改变生长过程中的衬底温度,全面系统地研究了衬底温度对柔性和刚性ZnS薄膜的晶体结构、光透过率、光学常数以及表面性能影响的规律。研究表明升高衬底温度有利于形成ZnS薄膜(111)晶面的择优取向生长。不同衬底温度条件下制备的柔性和刚性ZnS薄膜在可见光波长范围内的平均光透过率均大于80%;在红外波长范围的平均光透过率达到85%。柔性ZnS薄膜在400 nm-890 nm波长范围内的光学折射率为2.21-2.56。刚性ZnS薄膜的光学折射率随着衬底温度的升高有所增加,当衬底温度为300℃时,刚性ZnS薄膜在890 nm波长处的折射率达到2.26。柔性ZnS薄膜厚度及表面粗糙度均随着衬底温度的升高而降低,当衬底温度为300℃时,柔性ZnS薄膜表面均方根粗糙度达到最小值2.99 nm。为实现高性能柔性ZnS光电器件,应控制生长柔性ZnS薄膜的衬底温度在200℃-300℃,以获得最优化的器件性能。     

透明导电氧化物薄膜材料及其制备技术研究进展

综述了透明导电氧化物(TCO)薄膜的结构、光电性能以及TCO薄膜制备技术的研究进展.ITO薄膜性能优异,是重要的平面显示器件用材料.掺铝ZnO薄膜价格低廉,是极具开发前景的ITO薄膜的替代材料.柔性衬底氧化物半导体透明导电薄膜的开发和应用将扩大TCO薄膜的应用领域.     

PET衬底上ITO薄膜的制备及光电性能

用脉冲磁控溅射法在柔性衬底聚对苯二甲酸乙二醇酯(PET)上制备了氧化铟锡(ITO)透明导电薄膜,研究了溅射气压、时间和衬底温度等工艺条件对ITO薄膜光电性能的影响,并采用X射线衍射仪(XRD)、扫描电镜(SEM)对薄膜的物相结构与表面形貌进行了分析。结果表明:薄膜的平均晶粒尺寸随衬底温度的升高而增大;当溅射时间增加时,方块电阻与光透过率均减小;当衬底温度升高时,方块电阻减小,可见光透过率增大。     

在线紫外辐照辅助沉积柔性ITO薄膜的研究

显示技术正朝着柔性化、超薄化方向发展,低温制备柔性ITO薄膜已经成为一大趋势.本文在射频磁控溅射过程中,引入在线紫外辐照,室温条件下在有机衬底上制备柔性ITO薄膜的工艺,其最低方块电阻为5Ω,电阻率为2.5×10 -4Ω·cm,透光率为92%,远远优于未采用紫外辐照制备的柔性ITO薄膜.我们用四探针测试仪、分光光度计、原子力显微镜、X射线衍射仪等测试仪器,对未采用和采用在线紫外辐照制备的薄膜进行测试,分析探讨了紫外线辐照对薄膜的光电性能、表面形貌和生长取向的影响.研究结果表明:在紫外线的照射下,ITO薄膜表面形貌得到改善,晶界缺陷减少,生长更均匀,致密度更好,在降低薄膜电阻率的同时,提高了薄膜在可见光区的透射率,在紫外辐照下,ITO薄膜更趋于〈222〉的择优取向,且平均晶粒尺寸变大,结晶度提高,宏观表现为薄膜的电阻率降低.     

柔性衬底上AZO薄膜的附着力特性研究

使用脉冲激光沉积(PLD)方法在柔性衬底PMMA和PET上制备了具有高c轴择优取向的AZO(ZnO∶Al)薄膜。通过X射线衍射(XRD)、紫外可见分光光度计(UV-Vis)和纳米划痕仪,研究了在不同衬底下生长的薄膜样品的晶体结构、光学性能和附着力。结果表明,两种柔性衬底上生长的AZO薄膜都是单一的ZnO六方相,可见光范围内光学透过率均大于85%;PMMA、PET衬底上AZO薄膜的临界载荷数值分别为31.31mN和16.97mN,PET衬底上ITO薄膜的临界载荷数值为40.55mN。     

聚氨酯-聚丙烯酸酯共聚乳液的成膜和性能

通过XPS和接触角测试研究了聚氨酯-聚丙烯酸酯共聚乳液在不同基材上的成膜情况，并对共聚胶膜的耐水性和附着力进行了考察．由于该共聚乳液同时存在着亲水组分和疏水组分，所以它在不同的基材上成膜可导致其膜表面的组成成分不同，因而导致其耐水性和附着力也随基材而异。结果表明，亲水性的聚氨酯组分均富集于胶膜内部，但胶膜底层聚氨酯组分的含量却随基材的不同而不同。在憎水且表面张力较高的基材上，共聚胶膜的耐水性良好；共聚胶膜的附着力在表面张力较高的基材上也良好。     

类金刚石薄膜在不锈钢表面结合强度及耐腐蚀性研究

类金刚石(DLC)薄膜与不锈钢的结合强度是DLC薄膜应用于血管支架表面改性的关键技术问题.利用磁过滤阴极真空弧源沉积方法在316L不锈钢表面沉积DLC薄膜,研究沉积时基体偏压、薄膜厚度以及钛过渡层对DLC薄膜与基体结合强度的影响.研究结果表明,316L表面制备相同厚度的DLC薄膜,采用-1000V脉冲偏压制备的薄膜结合强度明显优于-80V直流偏压下制备的DLC薄膜;随着DLC薄膜厚度的增大,DLC薄膜与316L基体的结合力下降;316L不锈钢表面制备一层100nm的钛过渡层之后可以改善DLC薄膜的结合状况,并且经过20%的拉伸变形后,DLC薄膜完整,耐蚀性优于未表面处理的316L不锈钢.以上研究结果表明,磁过滤阴极真空弧源方法制备DLC薄膜与316L结合强度高,可以有效的提高316L的耐腐蚀性,是一种具有应用前景的血管支架表面改性方法.     

Effect of substrate patterning on hydroxyapatite sol-gel thin film growth

The effect of substrate patterning on hydroxyapatite (HA) sol-gel thin film growth is investigated. Sol-gel derived HA was spun onto wet and dry etched micro-patterned titanium substrates to obtain thin films of thickness ~ 400 nm. The amorphous films were made crystalline by firing at temperatures ranging from 650 to 850 °C for 5 min. Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to characterize the films. Crystal sizes calculated from XRD data show that films on patterned substrates contained larger grains than those on un-patterned substrates. The films on wet etched substrates contained larger grains than the films on dry etched substrates. AFM results confirm XRD results. A marked difference between the films on patterned and unpatterned substrates was observed, with those on the patterned substrates being much rougher than those on the unpatterned substrates. The films inside the channels contained larger grains than those outside of channels, on the polished, unetched portion of the substrate.     

Enhanced adhesion of plasma-sputtered copper films on polyimide substrates by oxygen glow discharge for microelectronics

Enhanced plasma-sputtered copper film adhesion onto polyimide substrates treated by oxygen glow discharge was investigated. The peel test demonstrates this improvement, with peel strengths of 0.7-1.2 g/mm for copper films prepared on un-modified polyimide substrates and 195.5-262.2 g/mm for copper films on oxygen plasma-modified polyimide substrates at certain plasma conditions. The enhanced adhesive strengths of plasma-sputtered copper films onto polyimide substrates by oxygen plasmas are due mainly to the increased surface energies of the polyimide substrates. Contact angle measurements indicate that the surface energies of polyimide substrates were greatly increased by oxygen plasmas. X-ray photoelectron spectroscopy analysis shows that the increased surface energies of polyimide substrates using oxygen plasmas occur because of the increased oxygen surface concentration and the increased C-O bond proportion.     

Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temperature ECR-PEMOCVD

A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of gallium nitride (GaN) films on ordinary soda-lime glass substrates with sputtered Cu as intermediate layer (Cu/glass substrates). The influence of deposition temperature on the properties of the GaN films on Cu/glass substrates was systematically investigated by means of In-situ reflection high energy electron diffraction, X-ray diffraction, atomic force microscopy and photoluminescence spectra. With this method, high c-orientated crystalline GaN films with relatively smooth surface were achieved on amorphous Cu/glass substrate at an extremely low temperature of ~400 °C. The successfully growth of crystalline GaN films on amorphous Cu/glass substrates show great potential for significant improvements in the scalability and cost of GaN based devices, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique.     

Closed equation for the normal incidence reflectance of thin films on absorbing substrates

The optical constants of thin films can be obtained from inversion of spectrophotometric measurements by using minimization gradient methods. The computational approach of these minimization methods requires closed compact formulas for reflectance and/or transmittance. For normal incidence closed compact formulations for the direct transmittance, both for thin films on transparent or absorbing substrates, and for the reflectance of thin films on transparent substrates, are available in the literature. We report here a closed compact formula to evaluate reflectance spectra of thin films on absorbing substrates, and it is shown that for vanishing substrate absorption this new, to the best of our knowledge, approach gives the same results obtained from the formulation corresponding to thin films supported by transparent substrates.     

The adhesion of thin plasma-polymerized organic films to metal substrates

The direct pull method was used to study the adhesion of thin (<1 μm) plasma-polymerized films on metal substrates. Application of this method provides information on the cohesive, as well as the adhesive, properties of these films. After breakage of the films by the pull method, the interface was analyzed by scanning electron microscopy to determine the nature of the breakage at the interface. Electron spectroscopy for chemical analysis was used to determine whether any chemically adsorbed layers of organic films remained after the films had been pulled from the metal substrate. The adhesive or cohesive strengths of plasma-polymerized tetrafluoroethylene and chlorotrifluoroethylene films on 304 stainless steel, aluminum and silver were measured by the pull method. Adhesive strength was found to be higher than cohesive strength for plasma-polymerized tetrafluoroethylene films on the various substrates. The result for plasma-polymerized chlorotrifluoroethylene films was not as expected, indicating that considerable care is required in the interpretation of tensile tests of laminates such as those conducted in this study.     

Al2O3基陶瓷及玻璃基底制备Ta-N薄膜微结构与电学特性的比较研究

在N2、Ar气氛中,采用反应直流磁控溅射法在Al2O3基陶瓷及玻璃基底上制备了Ta-N薄膜,并对各样品的形貌结构、化学组分及电学特性进行了比较分析研究。结果表明,沉积于Al2O3陶瓷及玻璃基底的Ta-N薄膜分别呈团簇状生长与层状紧密堆积生长;Al2O3陶瓷基底沉积的Ta-N为单相薄膜,而玻璃基底上的Ta-N薄膜,随N2、Ar流量比增加,呈单相向多相共存转变;薄膜表面形貌和微结构与基底材料的原始形貌和微结构紧密相关,这说明基底材料对薄膜的形成有重要的影响;N2、Ar流量比相同时,玻璃基底上沉积的Ta-N薄膜电性能优于Al2O3基陶瓷基底上沉积的Ta-N薄膜。     

磁控共溅射Ni3 Al合金薄膜的微观结构及电阻特性

研究了室温下采用直流磁控共溅射法在抛光玻璃和Si基底上沉积Ni3Al合金薄膜的制备工艺、微观结构和电阻特性.采用SEM、EDX、AFM、TEM等测试分析了不同基底、溅射功率、工作气压等因素对薄膜微观结构、成分比和电阻特性的影响.结果表明:采用大功率混合溅射可以得到多晶态Ni3Al纳米合金薄膜,且呈多层岛状生长.所得薄膜具有良好的导电性,与玻璃相比,在Si基底上的薄膜表面光滑平整,晶粒更小,电阻率略大.然而随着厚度的减小,薄膜的电阻率增加迅速,发生金属向绝缘体过渡的相变,而厚度较大时这种现象不明显,这表明Ni3Al薄膜相变与厚度及晶格中氧含量有关.     

Round pinholes in indium-tin-oxide thin films on the glass substrates: a Taguchi method analysis and theoretical approach to their origins

The origin of the round pinholes, ranging 30-70 μm in diameter, in indium-tin-oxide (ITO) thin films on the glass substrates were investigated. It has been found that the round pinholes in ITO thin films might arise from the tiny particles and organics, adsorbed onto the residual water of imperfectly pre-dried glass substrates at the pre-drying bath. The tiny particles and organics on the glass substrates might cause to weaken the adhesive powers between the ITO thin films and the glass substrates, finally resulting in the round pinholes at the photopatterning process.By Taguchi methods, it was revealed that the generation of the round pinholes in ITO thin films was directly related to the temperature and the amount of heat supply at the pre-drying bath. A simplified mechanism on the formation of the round pinholes in ITO thin films is proposed and verified.