Vacuum evaporated porous silicon photonic interference filters

Porous materials with nanometer-scale structure are important in a wide variety of applications including electronics, photonics, biomedicine, and chemistry. Recent interest focuses on understanding and controlling the properties of these materials. Here we demonstrate porous silicon interference filters, deposited in vacuum with a technique that enables continuous variation of the refractive index between that of bulk silicon and that of the ambient (n approximately 3.5 to 1). Nanometer-scale oscillations in porosity were introduced with glancing angle deposition, a technique that combines oblique deposition onto a flat substrate of glass or silicon in a high vacuum with computer control of substrate tilt and rotation. Complex refractive index profiles were achieved including apodized filters, with Gaussian amplitude modulations of a sinusoidal index variation, as well as filters with index matching antireflection regions. A novel quintic antireflection coating is demonstrated where the refractive index is smoothly decreased to that of the ambient, reducing reflection over a broad range of the infrared spectrum. Optical transmission characterstics of the filters were accurately predicted with effective medium modeling coupled with a calibration performed with spectroscopic ellipsometry.     

Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma

Low refractive index silicon oxide films were deposited using atmospheric-pressure He/SiH₄/CO₂ plasma excited by a 150-MHz very high-frequency power. Significant increase in deposition rate at room temperature could prevent the formation of dense SiO₂ network, decreasing refractive index of the resulting film effectively. As a result, a silicon oxide film with the lowest refractive index, n = 1.24 at 632.8 nm, was obtained with a very high deposition rate of 235 nm/s. The reflectance and transmittance spectra showed that the low refractive index film functioned as a quarter-wave anti-reflection coating of a glass substrate.     

Room-temperature formation of low refractive index silicon oxide films using atmospheric-pressure plasma

This study aims to apply atmospheric-pressure (AP) plasma to the fabrication of single-layer anti-reflection (AR) coatings with porous silicon oxide. 150 MHz very high-frequency (VHF) excitation of AP plasma permits to enhance the chemical reactions both in the gas phase and on the film-growing surface, increasing deposition rate significantly. Silicon oxide films were prepared from silane (SiH4) and carbon dioxide (CO2) dual sources diluted with helium. The microstructure and refractive index of the films were studied using infrared absorption and ellipsometry as a function of VHF power density. It was shown that significant increase in deposition rate at room temperature prevented the formation of a dense SiO2 network, decreasing refractive index of the resulting film effectively. As a result, a porous silicon oxide film, which had the lowest refractive index of 1.24 at 632.8 nm, was obtained with a very high deposition rate of 235 nm/s. The reflectance and transmittance spectra showed that the low refractive index film functioned as a quarter-wave AR coating of a glass plate.     

Development of interference filters based on multilayer porous silicon structures

Porous silicon (PS) has a great potential in optical applications due to its tuneable refractive index. In particular, multilayer structures consisting of alternating PS layers with different refractive indices can be used as interference filters for applications in the field of optoelectronics and sensors. In the present work, the optical properties of PS single layers and multilayer structures were studied. Since the refractive index of PS varies depending on the air content of the porous matrix, the PS structures were modelled as an homogeneous mixture of silicon and air, according to the effective medium theories (EMTs). By adjusting the refractive index and thickness of each individual layer, we can obtain a stack of PS layers with the desired optical properties, resulting in interference filters of predetermined bandwidth.     

Advanced key technologies for magnetron sputtering and PECVD of inorganic and hybrid transparent coatings

Besides classical multilayer systems with alternating low and high refractive indices, reactive pulse magnetron sputtering processes offer various possibilities of depositing gradient films with continuously varying refractive index. Using nanoscale film growth control it is possible to achieve optical filter systems with a defined dependency of refractive index on film thickness, e.g. by sputtering a silicon target in a time variant mixture of oxygen and nitrogen. Also reactive co-sputtering of different target materials such as silicon and tantalum in oxygen is suitable as well. Rugate filters made from SiO_xN_y or Si_xTa_yO_z gradient refractive index profiles find their application in spectroscopy, laser optics and solar concentrator systems.Furthermore polymer substrates are increasingly relevant for the application of optical coatings due to their mechanical and economical advantages. Magnetron PECVD (magPECVD) using HMDSO as precursor allows to deposit carbon containing films with polymer-like properties. Results show the suitability of these coatings as hard coatings or matching layers. Multifunctional coatings with antireflective and scratch-resistant properties were deposited on polymer substrates using a combined magPECVD and sputter deposition process.     

Thermally stable narrow-bandpass filter prepared by reactive ion-assisted sputtering

Thermal stabilities of three-cavity narrow-bandpass (NB) filters with high-index half-wave spacers and 78-102 layers of Ta(2)O(5) and SiO(2) prepared by reactive ion-assisted bipolar direct-current (dc) magnetron sputtering of tantalum and silicon targets, respectively, were investigated. Pure argon and pure oxygen were used as the sputtering gas and the reactant, respectively. The oxygen gas was introduced and ionized through the ion gun and toward the unheated BK7 glass substrate. The refractive indices of single-layer Ta(2)O(5) and SiO(2) films were 2.1 and 1.45, respectively, at 1550 nm, which were comparable with those of films prepared by other ion-assisted coating techniques. The moisture-resistant properties of the films were excellent as evidenced from the water-immersion test, implying that the packing density of the films was close to that of their bulk materials. The temperature-dependant wavelength shifts of the NB filters were <3 x 10(-3) nm/ degrees C at temperatures of <75 degrees C, indicating that the temperature-induced wavelength shift of the filter was <0.15 nm when the temperatures were raised from room temperature to 75 degrees C, which was compliant with Bellcore GR-1209-CORE generic requirements of NB filters used for optical-fiber communication systems.     

Elimination of interference effects from photoinduced-transmission decay curves of thin silicon films

The effects of interference on the photoinduced-absorption signals of thin absorbing films have been studied by recording the picosecond photoinduced-absorption decay curves of an amorphous and a polycrystalline silicon film and applying various probe-beam wavelengths and angles of incidence. The normalized decay curves measured at close to normal incidence have been found to depend strongly on the probe-beam wavelength. By contrast the decay curves obtained at the Brewster angle of incidence have shown a satisfactory coincidence. Theoretical calculations for the photoinduced changes of the transmittance of the film have been performed. These calculations prove that at normal incidence the contributions of the photoinduced changes of the absorption coefficient Δα and of the refractive index Δn to the change in the transmittance Δ T are comparable, whereas when the Brewster angle arrangement is employed, Δ T is proportional to Δα and the effect of the change in the refractive index is negligible.     

Optical and structural properties of LaF3 thin films

LaF(3) thin films of different thicknesses were deposited on CaF(2) (111) and silicon substrates at a relatively low substrate temperature of 150 degrees C. Optical (transmittance, reflectance, refractive index, and extinction coefficient) and mechanical (morphology and crystalline structure) properties have been investigated and are discussed. It is shown that LaF(3) thin films deposited on CaF(2) (111) substrates are monocrystalline and have a bulklike dense structure. Furthermore, it is presented that low-loss LaF(3) thin films can be deposited not only by boat evaporation but also by electron beam evaporation.     

Thermal oxidation of transition metal silicides: The role of mass transport

Thin films of almost all transition metal silicides on a silicon substrate oxidize and form SiO₂ on their surface when they are annealed in an oxidizing ambient atmosphere. In applications of these silicides as interconnects in integrated circuits, the oxidation characteristics of the silicide and the SiO₂ growth rate are very important.We review the four major steps controlling silicide oxidation: (1) oxidant transport through the oxide; (2) reaction at the silicide-oxide interface: (3) net transport of silicon atoms with respect to metal atoms in the silicide; (4) reaction at the silicide-silicon interface. The oxidant transport is shown to be the same for all silicides. The reaction at the silicide-oxide interface is explored using equilibrium thermodynamic arguments. The transport through the silicide is discussed and experimental results of inert marker experiments are presented.The diffusing species during the oxidation of PdSi, Pd₂Si, NiSi₂, CoSi₂, PtSi, CrSi₂ and TiSi₂ are discussed. The diffusing species during oxidation correlate with the moving species in silicide formation. A discussion of a mechanism that explains why the oxidation rate of some silicides on a silicon substrate is faster than that of the bare substrate is presented.     

High-accuracy spectrometer for measurement of regular spectral transmittance

A high-accuracy spectrometer has been developed for measuring regular spectral transmittance. The spectrometer is an automated, single-beam instrument that is based on a grating monochromator, reflecting optics, and an averaging sphere detector unit with a silicon photodiode. The uncertainties related to wavelength calibration, detector nonlinearity, system instability, beam displacement, polarization, stray light, interreflections, and beam uniformity are determined for the visible spectral range from 380 to 780 nm. A total uncertainty of 3 × 10(-4) (1σ) is estimated for transmittance measurements of homogeneous neutral-density filters. The uncertainty of the wavelength scale is 0.06 nm. As a specific application, calibration of V(λ)-correction filters is studied. To verify the accuracy of the transmittance measurements, a comparison of the measured and predicted transmittances of a sample of high-purity fused silica is made, revealing agreement at the 5 × 10(-4) level.     

Stable deposition of silicon oxynitride thin films with intermediate refractive indices by reactive sputtering

The deposition stability of silicon oxynitride thin films with intermediate refractive indices was investigated as a function of argon concentration in the process gas mixture. The silicon oxynitride thin films were deposited by pulsed dc reactive magnetron sputtering in a mixture of argon, nitrogen and oxygen. The refractive indices of the silicon oxynitride thin films gradually decreased with oxygen percentage in the reactive gas mixture when high argon concentrations were used. It is proposed that many silicon atoms were sputtered from the target and reached the substrates in high argon concentrations; consequently, drastic oxidation of the thin films did not occur.     

Characterization of high quality tantalum pentoxide film synthesized by oxygen plasma enhanced pulsed laser deposition

Tantalum pentoxide films were deposited on BK7 glass substrates using oxygen plasma enhanced pulsed laser deposition (OPE-PLD). X-ray diffraction, atomic force microscopy, ultraviolet–visible–near infrared scanning spectrophotometry, and spectroscopic ellipsometry were used to characterize the crystallinity, microscopic morphology and optical properties of films. Results show that the film roughness increased with the increase of oxygen pressure, and decreased with the application of OPE. Meanwhile the use of oxygen plasma in a 2 Pa O₂ pressure resulted in the transmittance of the thin film of 91.8% at its peak position (the transmittance of bare substrate). Moreover, the root-mean-square roughness as low as 0.736 nm, and refractive index of 2.18 at 633 nm wavelength, close to the refractive index of bulk Ta₂O₅ (~ 2.20 at 633 nm wavelength), were obtained.     

Optical properties of fluorinated silicon oxide films by liquidphase deposition for optical waveguides

Optical properties of fluorinated silicon oxide (SiOF) films for optical waveguide in optoelectronic devices were investigated. The SiOF films are formed at 25°C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (H₂SiF ₆) aqueous solution. Two main absorption peaks corresponding to Si-O and Si-F bonds were observed at the wavenumbers of 1090 and 930 cm^-1 in Fourier transform infrared (FTIR) spectrum, respectively. The LPD-SiOF films show very little content of water components such as Si-OH bonds and OH group. Although the transmittance for 600-nm-thick LPD-SiOF film gradually decreased from the wavelength around 700 nm, the relative transmittances to quartz glass are over 98% in the wavelength region from 350-2500 nm. The concentration of fluorine atoms in the LPD-SiOF film was about 5%, and the calculated composition was SiO_1.85F_0.15. The calculated refractive index from the polarizability for LPD-SiOF film was 1.430, and agrees very well with the measured value at the wavelength of 632.8 nm by ellipsometry. The dispersion of refractive index was evaluated and fitted to a three-term Sellmeier's dispersion equation. The zero dispersion wavelengths for the LPD-SiOF and thermally grown SiO₂ films were 1.271 and 1.339 μm, respectively     

Anti-reflection Coating for Cryogenic Silicon and Alumina Lenses in Millimeter-Wave Bands

A dielectric lens with high refractive index is suitable for focusing cryogenic devices in millimeter-wave bands when an appropriate anti-reflection (AR) coating is applied. Two types of AR coatings for silicon and alumina were studied at the millimeter-wave (220 GHz) band: one is by direct machining of mixed epoxy for a silicon lens array, while the other is by laser machining of an antireflective subwavelength structure for a large alumina lens used in a re-imaging optics system. The millimeter-wave optical properties of silicon, alumina, aluminum nitride, and Stycast epoxies were measured with a Fourier Transform Spectrometer (FTS) at cryogenic temperatures. The measured refractive index of the AR coating with a mixture of Stycast 1266 (n = 1.68) and Stycast 2850FTJ (n = 2.2) for silicon at 30 K was 1.84. The thickness of the epoxy AR coating was precisely controlled with direct machining. Transmittance of the AR-coated silicon substrate, measured with FTS, was approximately 95 % at the center frequency of the 220 GHz band with a bandwidth of 25 % at 27 K. An antireflective subwavelength structure was designed for an alumina sample with periodic cylindrical holes. The measured 220-GHz-band transmittance was above 90 % with a bandwidth of 25 % at 25 K.     

In situ and air index measurements: influence of the deposition parameters on the shift of TiO2/SiO2 Fabry-Perot filters

We measure the refractive index of thin films of TiO2 and SiO2 for given deposition parameters. Two complementary methods are used. The first is a postdeposition technique which uses the measurements of reflectance and transmittance in air. The second, in contrast, makes use of in situ measurements (under vacuum and during the actual deposition of the layer). The differences between the values deduced from the two methods can be explained by the amount of atmospheric moisture adsorbed by films. One tries to minimize these shifts for the two materials by choosing deposition parameters. The difficulties come from the absorption losses which must be as small as possible. We use the measured refractive indices of individual layers to give good numerical prediction of the wavelength shift (observed during the admittance of air after deposition in the vacuum chamber) of the transmittance peak of multidielectric Fabry-Perot filters.     

Optimization of PECVD silicon oxynitride films for anti-reflection coating

In this work, amorphous silicon oxynitride films were deposited on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD). The main purpose was to use silicon oxynitride film as a single-layer anti-reflection coating for Si-based optoelectronic devices. The chemical information was measured by infrared spectroscopy. Surface and cross-section morphology was determined by a scanning electron microscope. Spectroscopic ellipsometry (SE) was applied to measure the refractive index, extinction coefficient and thickness. The results of SE presented the refractive indices varied in the range of 1.83-1.92 by altering SiH₄/NH₃ ratio. One-side polished silicon substrate coated with silicon oxynitride film exhibited low reflectance, and two-side polished silicon substrate coated with silicon oxynitride film exhibited high transmittance. The results suggested that silicon oxynitride film was a very attractive single-layer anti-reflection coating.     

Substrate bias voltage influenced structural, electrical and optical properties of dc magnetron sputtered Ta2O5 films

Tantalum oxide (Ta₂O₅) films were formed on silicon (111) and quartz substrates by dc reactive magnetron sputtering of tantalum target in the presence of oxygen and argon gases mixture. The influence of substrate bias voltage on the chemical binding configuration, structural, electrical and optical properties was investigated. The unbiased films were amorphous in nature. As the substrate bias voltage increased to −50 V the films were transformed into polycrystalline. Further increase of substrate bias voltage to −200 V the crystallinity of the films increased. Electrical characteristics of Al/Ta₂O₅/Si structured films deposited at different substrate bias voltages in the range from 0 to −200 V were studied. The substrate bias voltage reduced the leakage current density and increased the dielectric constant. The optical transmittance of the films increased with the increase of substrate bias voltage. The unbiased films showed an optical band gap of 4.44 eV and the refractive index of 1.89. When the substrate bias voltage increased to −200 V the optical band gap and refractive index increased to 4.50 eV and 2.14, respectively due to the improvement in the crystallinity and packing density of the films. The crystallization due to the applied voltage was attributed to the interaction of the positive ions in plasma with the growing film.     

Optimized optical design of thin-film transistor arrays for high transmittance and excellent chromaticity

Transmittance and chromaticity are essential requirements for optical performance of thin-film transistor (TFT) arrays. However, it is still a challenge to get high transmittance and excellent chromaticity at the same time. In this paper, optimized optical design by using antireflection film theory and optical phase modulation is demonstrated in low temperature poly-silicon (LTPS) TFT arrays. To realize high transmittance, the refractive index difference of adjacent films is modified by using silicon oxynitride (SiO_xN_y) with adjustable refractive index. To realize excellent chromaticity, the thicknesses of multilayer films are precisely regulated for antireflection of certain wavelength light. The results show that the transmittance and chromaticity have been improved by about 6% and 18‰, respectively, at the same time, which is a big step forward for high optical performance of TFT arrays. The device characteristics of the TFT arrays with the optimal design, such as threshold voltage and electron mobility, are comparable to those of conventional TFT arrays. The optimized optical design results in enhanced power-conversion efficiencies and perfects the multilayer film design on the basic theory, which has great practicability to be applied in TFT arrays.     

Optical properties of erbium oxide thin films deposited by electron beam evaporation

Erbium oxide thin films were deposited by electron beam evaporation on substrates heated to 300 °C. The effect of the introduction of oxygen on the structural, chemical and optical properties of the films was investigated. The films were characterized using X-ray diffraction, X-ray photoelectron spectroscopy and normal-incidence transmittance and reflectance. The films had microcrystallites embedded in an amorphous matrix, and their stoichiometry was dependent on the oxygen partial pressure. The transmittance spectra of the films revealed that they were optically inhomogeneous. A model based on an inhomogeneous layer was applied to extract the refractive index and extinction coefficient from the transmittance and reflectance spectra.