基于Sn掺杂Ge2Sb2Te5的相变存储器器件单元存储性能

采用0.18μm标准工艺制备出基于Sn掺杂Ge2Sb2Te5相变材料的相变存储器器件单元,利用自行设计搭建的电学测试系统研究了其存储性能.结果表明:Sn的掺杂没有改变Ge2Sb2Te5的相变特性,其相变阚值电压和阈值电流分别为1.6V和25μA;实现了器件单元的非晶态(高阻)与晶态(低阻)之间的可逆相变过程;器件单元中相变材料结晶所需电流最低为1.78mA(电流宽度固定为100ns)、结晶时间大于80ns(电流高度固定为3mA);相变材料非晶化脉冲电流宽度为30ns时,所需电流大于3.3mA;与Ge2Sb2Te5相比,Sn的掺杂降低了SET操作的脉冲电流宽度,提高了结晶速度,有利于提高相变存储器的存储速度.     

阳离子迁移型阻变存储材料与器件研究进展

硅基闪存是当前半导体市场的主流非易失性存储器,但其小型化日益接近物理极限.阳离子迁移型阻变存储器是下一代高速、高密度和低功耗非易失性存储器的有力竞争者之一,近些年受到科学界和工业界的广泛关注.本文从材料、阻变机理和器件性能3个方面综述了阳离子迁移型阻变存储器的研究进展,其中材料部分包括电极材料和存储介质,阻变机理部分包括金属导电细丝的存在、生长模式和生长动力学,而器件性能部分包括开关比、擦写速度、擦写功耗、循环耐受性、数据保持特性以及器件小型化潜力.最后,对本领域的未来研究重点进行了展望.     

Sn掺杂Ge-Sb-Te相变薄膜的晶化特性

用磁控溅射法制备了掺杂Sn的Ge2Sb2Te5相变材料薄膜,研究了Sn含量对结晶性能的影响.薄膜的X射线衍射(XRD)表明,热处理使薄膜发生了从非晶态到晶态的相变,并出现Sn-Te相.通过示差扫描量热(DSC)实验测出在不同加热速率下非晶态薄膜粉末的结晶峰温度,计算了材料的结晶活化能.根据结晶动力学分析和结晶活化能数据,掺杂Sn后的Ge-Sb-Te具有更高的结晶速率,用于光存储时将具有更高的擦除速度.     

Ge2Sb2Te5相变存储器导电机制研究

本文研究了Ge2 Sb2 Te5相变存储器的导电机制.本文考虑了实验中观察到的场致激活能的非线性下降以及结晶化后跳跃间距变大带来的影响,提出了一种有效导带底偏移模型,并在此基础上建立了修正的电流模型.计算结果表明,激活能随电压增加呈双曲余切的下降趋势,符合测量结果.该模型还包含了温度效应,结果表明跳跃间距与温度成反比....     

基于相变存储器的相变存储材料的研究进展

相变存储器具有非易失性、循环寿命长、元件尺寸小、功耗低、多级存储、与现有集成电路工艺相兼容等诸多优点,被认为是最具潜力的下一代存储器.简要介绍了相变存储材料的工作原理和对相变存储材料的性能要求,综述了近年来国内外在相变材料存储性能的优化、存储机理以及面临的关键问题等方面的最新研究成果,最后展望了相变存储材料的研究和发展趋势.     

不同重复单元数的聚乙二醇正十六烷基醚的结晶性能

聚合物相变材料是一类新型清洁、储能材料。分别采用傅里叶变换红外光谱仪(FT-IR)、X射线衍射仪(XRD)、差示扫描量热仪(DSC)和热重分析仪(TG)等研究了重复单元数(n)为2,10和20的聚乙二醇正十六烷基醚(C16En)的结晶结构、结晶性能和热稳定性。重复单元数n的变化对C16En的性能有重要影响。C16En在0℃下可形成完整的结晶结构,在n≥10时,C16En的结晶结构与聚乙二醇相似。C16E10的熔融温度和结晶温度分别为33.7和15.0℃,热焓达到148J/g,5%失重温度296℃,热稳定性优于正十六烷和1-十六醇,是一种有前途的聚合物相变材料。     

一种含有乙烯基具有固-固相变性能的大单体的制备及表征

通过分子设计,把具有固-液相变性能的聚乙二醇单甲醚(MPEG)的端羟基改性为具有乙烯基碳碳双键的大单体,形成一种可以与任意含有乙烯基双键的骨架材料进行自由基共聚合的具有高相变焓的固-固相转变单体材料。运用傅立叶变换红外光谱(FT-IR)和核磁共振氢谱(1H-NMR)表征了大单体的结构,采用差示扫描量热法(DSC)、广角X射线散射仪(WAXD)和偏光显微镜(POM)、热失重(TG)表征并分析了MPEG的热性能及其结晶情况。结果表明,这种新型单体具有稳定的分子结构、良好的结晶性能、高相变焓,热稳定性良好。从而为聚乙二醇类的固-液相变材料在固-固相变材料的应用领域中开辟了一条新的途径。     

纳米晶镁铝水滑石结晶动力学

以尿素为沉淀剂制备纳米晶镁铝水滑石,其结晶生长机理与粒径无关.从相变驱动力、晶种与晶体形成、成核速率和晶体生长速率3个方面研究了纳米晶镁铝水滑石的结晶动力学,求出不同温度下成核速率、晶体生长速率及其相应的表观活化能,并确定其动力学模型.结果表明影响晶粒形成和生长的主要因素是晶化温度和反应物过饱和度.当x(Mg):x(Al)=3、晶化温度120℃、晶种Al(OH)3、晶种用量3.0%时可快速得到较好的层状纳米晶镁铝水滑石.     

微纳米水合盐相变材料Na2CO3·7H2O的仿生合成及热学性质研究

以定量滤纸为生物模板制备了具有定量滤纸形貌的Na2CO3晶体,经过低温下的吸水和结晶过程合成了相变材料Na2CO3·7H2O。并借助扫描电子显微镜(SEM)、X-射线粉末衍射仪(XRD)和差示扫描量热仪(DSC)对产物的形貌、晶型以及热学性质进行了表征。同时,考察了掺杂NaCl对合成的相变材料Na2CO3·7H2O的热学性能的影响。结果表明:产物纯度高,且很好地遗传了模板(滤纸)的形貌;Na2CO3.7H2O表现出了良好的储能效果,相变热可达216.8J/g;掺杂NaCl(20mol%)可使Na2CO3.7H2O的相变温度降低5.5℃,而相变热仍然高达177.9J/g。     

一种含有乙烯基具有固-固相变性能的大单体的制备及表征EI

通过分子设计,把具有固-液相变性能的聚乙二醇单甲醚(MPEG)的端羟基改性为具有乙烯基碳碳双键的大单体,形成一种可以与任意含有乙烯基双键的骨架材料进行自由基共聚合的具有高相变焓的固-固相转变单体材料。运用傅立叶变换红外光谱(FT-IR)和核磁共振氢谱(1H-NMR)表征了大单体的结构,采用差示扫描量热法(DSC)、广角X射线散射仪(WAXD)和偏光显微镜(POM)、热失重(TG)表征并分析了MPEG的热性能及其结晶情况。结果表明,这种新型单体具有稳定的分子结构、良好的结晶性能、高相变焓,热稳定性良好。从而为聚乙二醇类的固-液相变材料在固-固相变材料的应用领域中开辟了一条新的途径。     

Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode

A phase change memory cell with tungsten trioxide bottom heating layer/electrode is investigated. The crystalline tungsten trioxide heating layer promotes the temperature rise in the Ge(2)Sb(2)Te(5) layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. Theoretical thermal simulation and calculation for the reset process are applied to understand the thermal effect of the tungsten trioxide heating layer/electrode. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline tungsten trioxide material.     

Fabrication of high-density In(3)Sb(1)Te(2) phase change nanoarray on glass-fabric reinforced flexible substrate

Mushroom-shaped phase change memory (PCM) consisting of a Cr/In(3)Sb(1)Te(2) (IST)/TiN (bottom electrode) nanoarray was fabricated via block copolymer lithography and single-step dry etching with a gas mixture of Ar/Cl(2). The process was performed on a high performance transparent glass-fabric reinforced composite film (GFR Hybrimer) suitable for use as a novel substrate for flexible devices. The use of GFR Hybrimer with low thermal expansion and flat surfaces enabled successful nanoscale patterning of functional phase change materials on flexible substrates. Block copolymer lithography employing asymmetrical block copolymer blends with hexagonal cylindrical self-assembled morphologies resulted in the creation of hexagonal nanoscale PCM cell arrays with an areal density of approximately 176?Gb/in(2).     

Si-Sb-Te materials for phase change memory applications

Si-Sb-Te materials including Te-rich Si?Sb?Te? and Si(x)Sb?Te? with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si(x)Sb?Te? shows better thermal stability than Ge?Sb?Te? or Si?Sb?Te? in that Si(x)Sb?Te? does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si(x)Sb?Te? improves. The 10 years retention temperature for Si?Sb?Te? film is ~393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si(x)Sb?Te? films also show improvement on thickness change upon annealing and adhesion on SiO? substrate compared to those of Ge?Sb?Te? or Si?Sb?Te? films. However, the electrical performance of PCRAM cells based on Si(x)Sb?Te? films with x > 3.5 becomes worse in terms of stable and long-term operations. Si(x)Sb?Te? materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.     

Crystallization kinetics of amorphous Ga-Sb films extended for phase-change memory

Performance of phase-change materials based on Ga-Te-Sb was found getting better with decreasing Te content in our earlier studies. We concerned much properties of Te-free, Sb-rich binary Ga-Sb, which has been known to possess extremely fast crystallization behavior. Non-isothermal and isothermal crystallization kinetics of amorphous Sb-rich Ga-Sb films were explored by temperature dependent electrical resistance measurements. The crystallization temperature (183 to 261 degrees C) increases with decreasing Sb content (91 to 77 at%). The activation energy and rate-factor vary with Sb contents and reach the maximum at Ga19Sb81. The kinetic exponent is smaller than 1.5 at Sb < 85 at% denoting that the mechanism is one-dimensional crystal-growth from nuclei. The temperature corresponding to 10-year data-retention, evaluated from films, is 180 degrees C (Ga19Sb81) and 137 degrees C (Ga13Sb87), respectively. We verified memory performance using test-devices made of Ga16Sb84 working at voltages with 100 ns pulse-width.     

Ga doping induced structural and optical modification in $$\hbox {Ge}_{2}\hbox {Sb}_{2}\hbox {Te}_{5}$$ Ge 2 Sb 2 Te 5 thin films

\(\text {Ge}_2\text {Sb}_2\text {Te}_5\) (GST) is considered a promising candidate for next-generation data storage devices due to its unique property of non-volatility and low power consumption. In present work, the bulk alloys and thin films of (\(\text {Ge}_2\text {Sb}_2\text {Te}_5\))\(_{100-x}\text {Ga}_x\) (x = 0, 3, and 10) are prepared using melt quenching and thermal deposition method, respectively. The effect of Ga doping on host composition is investigated by analyzing X-ray diffraction patterns and field emission scanning electron microscope images. From obtained results, it is found that all doped thin films retained the amorphous nature and exhibited uniform and smooth morphology. In Raman spectra, the appearance of a new peak in 10% Ga-doped GST thin film indicated an alteration in the atomic arrangement of host lattice. Transmission spectra revealed the highly transparent nature of all deposited thin films in the near-infrared region. The optical band gap of Ga-doped GST thin film is lower than that of the pure GST thin film which can be correlated with an increase in band tailing, attributed to an increase in localized defect states in the band gap. Due to the pronounced electronegativity difference between the Ga and Te element, new Ga–Te bonds with a higher number of wrong bonds (Ge–Ge, Sb–Sb, and Ge–Sb) are expected to thermally stabilize the amorphous phase. Such results predict the better performance of Ga-doped GST composition for better performance of phase-change random access memory.

     

A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology

Nano-Micro Letters - In this letter, a phase change random access memory (PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide...     

Minimum voltage for threshold switching in nanoscale phase-change memory

The size scaling of the threshold voltage required for the amorphous-to-crystalline transition in phase-change memory (PCM) is investigated using planar devices incorporating individual GeTe and Sb2Te3 nanowires. We show that the scaling law governing threshold switching changes from constant field to constant voltage scaling as the amorphous domain length falls below 10 nm. This crossover is a consequence of the energetic requirement for carrier multiplication through inelastic scattering processes and indicates that the size of PCM bits can be miniaturized to the true nanometer scale.     

Interfacial phase-change memory

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decreases the resistivity by three orders of magnitude, and also increases reflectivity across the visible spectrum. Moreover, phase-change memory based on GST is scalable, and is therefore a candidate to replace Flash memory for non-volatile data storage applications. The energy needed to switch between the two phases depends on the intrinsic properties of the phase-change material and the device architecture; this energy is usually supplied by laser or electrical pulses. The switching energy for GST can be reduced by limiting the movement of the atoms to a single dimension, thus substantially reducing the entropic losses associated with the phase-change process. In particular, aligning the c-axis of a hexagonal Sb(2)Te(3) layer and the 〈111〉 direction of a cubic GeTe layer in a superlattice structure creates a material in which Ge atoms can switch between octahedral sites and lower-coordination sites at the interface of the superlattice layers. Here we demonstrate GeTe/Sb(2)Te(3) interfacial phase-change memory (IPCM) data storage devices with reduced switching energies, improved write-erase cycle lifetimes and faster switching speeds.     

High thermal stability and low power dissipation PCM with nanoscale oxygen‐doped SS thin film

To improve thermal stability and reduce power dissipation of phase‐change memory (PCM), the oxygen‐doped Sn₁₅ Sb₈₅ (SS) thin film is proposed by magnetron sputtering in this study. Comparing to undoped Sn15Sb85(SS), the oxygen‐doped‐SS thin film has superior thermal stability and better data retention. Meanwhile, the electrical conductivity of crystallisation oxygen‐doped‐SS thin film is also lower than that of SS, which means its less power consuming in PCM. The electrical conductivity ratio between amorphous and crystalline states for oxygen‐doped SS reaches up to two orders of magnitude. After oxygen doping, the root‐mean‐square surface roughness from amorphous (0.29 nm) to crystalline (0.46 nm) state for oxygen‐doped‐SS thin films becomes smaller. The switching time of amorphisation process for the oxygen‐doped‐SS thin film (∼2.07 ns) is shorter than Ge₂ Sb₂ Te₅ (GST) (∼3.05 ns). X‐ray diffractometer is recorded to investigate the change of crystalline structure. Thus, the authors infer that oxygen‐doped SS is a promising phase‐change thin film for PCM.Inspec keywords: sputter deposition, antimony compounds, X‐ray diffraction, phase change memories, thin films, surface roughness, doping, electrical conductivity, amorphisation, crystallisation, thermal stability, amorphous state, crystal structure, nanostructured materials, nanofabrication, oxygenOther keywords: oxygen doping, low power dissipation, high thermal stability, phase‐change memory, magnetron sputtering, nanoscale oxygen‐doped Sn15Sb85 thin film, electrical conductivity, crystallisation, crystalline state, amorphous state, root‐mean‐square surface roughness, amorphisation process, X‐ray diffractometry, crystalline structure, Sn₁₅ Sb₈₅      

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires

The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.