高功率激光器发展趋势

对二氧化碳激光器、HF/DF化学激光器、氧碘化学激光器、光纤激光器、固体激光器、半导体泵浦碱金属激光器等高功率激光系统进行了介绍,并对高功率激光器发展趋势及内在规律进行了讨论。     

我国激光器件的发展概况及近况

综述了我国大功率激光器、晶体激光器、半导体激光器、气体激光器、化学激光器和染料激光器的发展概况及近况，并对进一步发展我国激光器件的问题进行了讨论。     

工业大功率激光器的最新进展

材料加工用激光器主要有4种类型：准分子激光器、固体激光器、二极管激光器和本文重点讨论的大功率CO2激光器，其中轴快流CO2激光器输出的激光束亮度与费用之比是其他激光器无可比拟的，所以这种激光器在平板材料激光切割应用中占据优势。近20年来，这种激光器的输出功率以每4年就增加1kW的速度发展，推动了整个金属板材加工业不断取得新进展。具有输出功率2kW，扩散冷却环形发射CO2激光器能够使安装有激光器的机器人执行三维加工。     

大功率激光器及其发展北大核心CSCD

大功率激光器在工业与国防等领域有着广泛的应用,是现代激光材料加工、激光再制造、国防安全领域中必不可少的核心组件。随着激光技术的发展,大功率激光器的性能也在不断提高,许多新型激光器相继问世。相比于传统的灯抽运激光器,半导体激光器具有体积小、效率高、质量轻、寿命长、成本低等诸多优点,在国民经济的许多方面起着越来越重要的作用。随着大功率半导体激光器的不断发展,由其抽运的全固态和非全固态激光器的发展也十分迅速。综述了半导体激光器以及全固态和非全固态半导体抽运激光器的历史和进展,并就提升大功率半导体激光器各方面性能做了相关介绍,分析评述了大功率激光器的发展趋势,并展望了大功率激光器在未来智能制造中的应用前景。     

全固体激光器向离子激光器挑战

高功率连续波可见和紫外激光器的年销售市场约为7500万美元。其应用包括娱乐、科研激光器泵浦、医学、复印、立体光刻和光盘母盘刻录等方面。这种市场的规模和多样性吸收了众多激光器制造商提供各式各样的产品。直至最近，高功率连续波可见光和紫外激光器都还是“气体和离子激光器”的同义词。遗憾的是，目前水平的几瓦离子激光器其总体效率低于0．05％，这意味着“气体和离子激光器”具有很高电力和水力费用，以及高功率气体激光器所特有的大尺寸和大重量。虽然在绝对需要高功率（大于1W）、短波长（＜675mm）、高光束质量激光的应用中允…     

第二章常用激光器

激光器的种类很多 ,习惯上主要按两种方法进行分类。一种是按激光工作介质的不同分类 ;一种是按激光器工作方式的不同来分类。到目前为止 ,已经发现能产生激光的工作物质有上千种 ,能产生上万种不同波长的激光。根据工作介质的不同来分类 ,可以把激光器分为固体激光器、气体激光器、液体激光器、半导体激光器及自由电子激光器等。按激光器的工作方式的不同分类 ,则看激光的输出是连续输出方式还是脉冲输出方式 ,分别称为连续激光器和脉冲激光器。脉冲激光器又按脉冲的持续时间长短或采用的相应技术不同分为Ｑ开关激光器 (脉冲宽度为纳秒量级…     

高功率固体激光器关键技术

高功率固体激光器技术发展迅速,新材料、新体制的固体激光器不断涌现,从而使战术激光武器有望进入电激励的固体激光器时代.评述和比较了热容型固体激光器、新型二极管泵浦薄板条激光器、光纤激光器等三种高功率固体激光器的技术方案、技术途径和涉及的关键技术,对发展100kW级固体激光器的关键技术和研究基础进行了分析,并对高功率固体激光器及其中间成果的可能应用前景进行了描述.     

高功率铜蒸气激光器的发展

总结了近几年来大口径、高功率铜蒸气激光器实验和理论方面的工作，讨论了高功率铜蒸气激光器结构、大口径铜节气激光器模型和工作物质的重大改进，展望了高功率铜节气激光器实验及理论方面的进展及可行性方案。     

钠导星激光器研究进展

介绍了钠导星激光器在自适应光学系统中的应用价值,分析了其指标特点及技术难点.按产生方式的不同,分别从染料激光器、固体激光器、光纤激光器3个方面阐述了钠导星激光器的发展历程及最新进展.染料钠导星激光器是最早获得工程应用的激光器,但由于体积较大、稳定性及可靠性较差等缺点逐渐遭到淘汰.固体钠导星激光器又分为和频(SFG)、受...     

美国海军舰载激光武器研究进展

近年来,美国海军重点研究了可用于水面舰艇的三种激光器-光纤固体激光器、板条激光器和自由电子激光器。介绍了基于此三类激光器的几款舰载激光武器系统即"激光武器系统"、"战术激光系统"、"板条固体激光器"、"自由电子激光器"的构成、研究现状和试验进展,并讨论了其面临的关键技术问题。     

Compact solid-state waveguide lasers

Glass waveguide lasers will fill an important niche as optical sources in communication, RF photonics, and optical metrology. This is primarily because waveguide lasers benefit from compact size, low noise, relatively high output powers, long upper-state lifetimes, and simple integration with optical-fiber-based systems. Although we do not expect waveguide lasers and amplifiers to ever supplant fiber and semiconductor lasers and amplifiers in every possible communications application, waveguide lasers have a number of advantages over traditional lasers for these uses. Single-frequency waveguide lasers provide narrow linewidth and high output power in a compact, monolithic package. The narrow linewidth is an important advantage over standard semiconductor lasers, and the compact size makes single-frequency waveguide lasers better suited than fiber lasers or extended-cavity semiconductor lasers for many applications.     

飞速发展的半导体激光器

评述半导体激光器的发展动态, 包括应变量子阱激光器、垂直腔面发射激光器、可见光激光器、增益耦台型分布反馈激光器及高功率激光器列阵等。     

Development of Fiber Lasers and Their Applications

1 Introduction Fiber lasers have been developed for more than forty years since Snitzer!s proposal and the demonstration of Nd- doped fiber in 1961 [1]. But fiber lasers have not been attracted considerable attention until the develop- ment of the low- loss fiber fabrication technology and the high power semiconductor laser technology recently. Actually,it is the application and development of fiber communication technology that has promoted the rapid development of fiber laser. Fiber laser, …     

Tapered Cavities for High-Modulation-Efficiency and Low-Distortion Semiconductor Lasers

We show that mode structure and cavity geometry in multisegment semiconductor lasers can be tailored to realize high modulation efficiencies as well as low distortion levels in directly modulated semiconductor lasers using the gain-lever effect. Compared with conventional semiconductor gain-lever lasers, the lasers proposed here can have five times higher modulation efficiencies. The second-order harmonic and third-order two-tone intermodulation distortion levels in the proposed lasers are also significantly lower than in conventional gain-lever lasers. We also show that, in the lasers proposed here, unlike in conventional gain-lever lasers, modulation bandwidths and output power levels may not be sacrificed in order to obtain high modulation efficiencies.     

向100kW进军的固体激光器--浅析国外高能固体激光技术发展现状与趋势

介绍了近10年来国外高能固体激光器的研发慨况，包括同体热容激光器、紧凑有源反射镜激光器、边抽运板条激光器和光纤激光器，以及多台（光纤）激光器卡相干合成技术。此外，还简要介绍了美国空、海、陆三军和海军陆战队对固体激光器的兴趣、100kW固体激光武器在不同条件下的作用距离，以及相关中间成果的利用。     

High-pressure pulsed molecular lasers

A review of recent developments in high-pressure pulsed molecular lasers is presented. Included are some experimental results on TEA lasers, E-beam lasers, and lasers using Blumlein excitation. Discussions of the kinetic modeling, the parametric behavior, and the characteristics of uniform discharges in the high-pressure pulsed CO2laser are given. Recent results on pulse-initiated chemical lasers, extremely high-pressure lasers, and high-repetition-rate TEA lasers are also discussed. Efforts to control and use the output from these devices are described, and an extensive list of references is given.     

Wide-aperture planar lasers

Wide-aperture planar lasers (vertical-cavity surface emitting lasers, distributed feedback lasers, 2D spaser arrays, and plasmon lasers on stopped-light mode) are reviewed. Structure, parameters (directional pattern and amplitude modulation frequency), and physical principles of such lasers are discussed.     

High performance CW 1.26 μm GaInNAsSb-SQW and 1.20 μmGaInAsSb-SQW ridge lasers

Long-wavelength GaInNAsSb SQW lasers and GaInAsSb SQW lasers that include small amounts of Sb have been successfully grown by gas-source molecular beam epitaxy (GSMBE) and processed into ridge lasers. The GaInNAsSb lasers oscillated under CW operation at 1.258 μm at room temperature. A low CW threshold current of 10.2 mA and high characteristic temperature (T₀) of 146 K were obtained for the GaInNAsSb lasers which is the best result for GaInNAs-based narrow-stripe lasers. Furthermore. The GaInAsSb lasers oscillated under CW operation at 1.20 μm at room temperature. A low CW threshold current of 6.3 mA and high characteristic temperature (T₀) of 756 K were obtained for the GaInAsSb lasers, which is also the best result for the 1.2 μm-range of highly strained GaInAs-based narrow-stripe lasers     

多段式半导体激光器的研究进展

综述了多段式半导体激光器的研究进展.按结构不同,将它们分为两段式、三段式和四段式激光器进行讨论.重点介绍了几类具有典型结构的单片式集成激光器,总结了它们的设计背景、设计目的、基本设计思想、性能特点和基本用途,讨论了这些器件结构的共同点,指出两段式、三段式和四段式激光器研究上的关联和各自的研究重点.分析了多段式半导体激光器的发展趋势,展望了它们的应用前景.