纳米光波导光滑技术研究进展

随着半导体工业的发展,集成光电器件的特征尺寸越来越小,纳米光波导表面光滑技术将面临新的挑战。降低纳米光波导表面粗糙度,制造超低损耗纳米光波导,实现其高效片间光互连与片内光耦合,是集成光电子器件,特别是高灵敏微陀螺、生化传感器、光通讯等器件发展的关键。主要分析了光波导表面粗糙度与传播损耗的关系,着重阐述纳米光波导表面光滑工艺方法,包括热氧化法、氢退火法及激光束法的研究现状及最新进展,总结了各类工艺的技术难点与发展前景,并展望其在微机电、光集成方面应用前景。     

热氧化法改善光学谐振腔的传输特性（英文）

为了改善光学波导较大的侧壁粗糙度,探究分次氧化工艺相比于单次氧化工艺的优势,运用微机电系统(MEMS)工艺制备了绝缘体上硅环型谐振腔和跑道型谐振腔,并通过单次氧化工艺和二次氧化工艺对其进行优化处理。理论分析并仿真了粗糙度、散射损耗和光学谐振腔传输特性之间的关系。实验结果显示,相同的氧化深度下,相比单次氧化工艺,二次氧化工艺获得了较窄的半峰全宽(FWHM)、较高的品质因数(Q)和较低的传输损耗。研究结果为波导表面光滑研究提供了重要的参考依据,同时对于高Q值、低损耗谐振腔的制备及其在滤波器、生物传感和光学陀螺等相关领域中的应用具有重要的研究意义。     

SOI纳米光波导表面粗糙度的研究进展

SOI纳米光波导表面粗糙度会显著增加波导散射损耗,降低表面粗糙度是其在许多方面应用中亟待解决的关键问题之一。首先介绍了表面粗糙度概念,总结了表面散射损耗理论方面的研究进展。随后回顾了多种SOI纳米光波导表面粗糙度测量方法,以及在表面形貌表征中存在的问题。此外,还对几种波导表面光滑工艺进行介绍,并结合具体的工作对光波导表面粗糙度各方面研究进展进行了总结。     

微光学陀螺楔形谐振腔制备技术研究

Si基谐振式光学微腔陀螺以小型化、集成化成为未来姿态检测领域的发展趋势,其极限灵敏度主要取决于谐振腔直径D与品质因数Q值乘积,目前常见的硅基微腔直径为微米级,为了进一步提高极限灵敏度,实验中控制加工工艺减小反应过程中残余应力与表面粗糙度,制备出直径D为8mm、表面粗糙度小于1nm、Q值2.4×106的大尺寸硅基SiO2楔形谐振腔,可实现陀螺极限灵敏度达到55°/h,为芯片级、集成化的新型谐振式光学微腔陀螺的研究奠定了实验基础。     

制备高Q值的光波导谐振腔的关键技术研究

品质因数Q是光学谐振腔具备的非常重要的参数,尺寸较大的谐振腔虽然每圈的损耗更大,但是它却拥有更高的Q值。针对此问题,从光子寿命方面对谐振腔的结构进行了相应的建模分析和仿真,然后提出引入等效单位传输损耗对谐振腔的腔长和品质因数的关系进行了理论上的分析并进行了仿真,通过硅基微纳加工技术加工了四种腔长分别为3.1ｃｍ,9.5ｃｍ,12.6ｃｍ,18.8ｃｍ的光波导谐振腔,保持其耦合系数不变时的测试结果为:谐振腔的传输损耗随着腔长的增加而降低,品质因数Q增大,测试结果与理论值一致,该结论为制备更高品质因数的光波导谐振腔提供一种新的研究思路。     

硅基光波导结构与器件

简要评述硅基光波导的结构，工艺及其器件，包括低损耗的硅基光波导，电光波导器件，红外波导探测器，氧化硅光回路等。     

硅基波导光开关及开关阵列的研究进展

光开关是光网络中实现光交换的核心器件.硅基波导光开关作为一类重要的开关器件,具有体积小、开关速度快、兼容性好等优点.近年来随着硅基波导制作技术的成熟,硅基波导光开关及开关阵列的研究日益受到人们的重视.文章介绍了SOI(silicon-on-insulater)光波导、聚合物光波导和SiO2光波导等三类常见的硅基波导在光开关及开关阵列方面的一些研究进展.     

银纳米线在Si(5512)表面上自组装(英文)

由于银不会在硅表面与硅形成任何硅化物,银线成为在具有排状结构的Si(5512)表面自组装纳米线的候选材料。本研究试用不同的银覆盖度和退火温度制作高纵横比的银纳米线。当覆盖度为0.1单原子层,先后两次退火温度分别为500℃和600～700℃,经缓慢冷却过程,非常规则的银链优先吸附在Si(5512)面的四聚体上,从而形成高纵横比的银纳米线。这一自组装的两步退火过程可理解为:低温退火使吸附的银原子与Si表面结合;高温退火提供银原子扩散到Si表面四聚体位置的能量。     

谐振式硅基集成光学陀螺的偏振噪声建模与分析

偏振噪声是谐振式集成光学陀螺的主要光学噪声源,其存在大大降低了系统的精度,为了定量化研究谐振式集成光学陀螺偏振噪声的产生机理,利用琼斯矩阵和光束传播法建立了谐振式硅基集成光学陀螺偏振噪声模型,该模型综合考虑了波导传输介质中的光偏振态交叉耦合、应力双折射等的影响,有效地逼近了实际的物理系统。基于上述模型得出了谐振腔内二氧化硅波导本征偏振态交扰与陀螺极限输出之间的表达式。对波导谐振腔内与偏振相关的3个因素:输入光偏振态、温度波动和波导保偏性能进行了仿真分析。并通过在输入端插入高偏振度起偏器的实验装置,有效验证了所建偏振理论模型受输入光偏振态波动影响的正确性。     

基于宽度调制谐振腔的光子晶体电光调制器

针对目前电光调制器插入损耗高的问题,提出了一种基于宽度调制(WM)型谐振腔的光子晶体电光调制器.该器件由输入端纳米线波导、硅基光子晶体波导和WM型谐振腔组成,前二者的连接处采用锥形结构,用于减少2种波导之间的级联损耗.根据时域耦合模理论与等离子体色散效应,采用WM型谐振腔和PN掺杂结构实现对横电(TE)模的调制,并应用...     

热处理对低损耗高反膜特性的影响分析

低损耗激光薄膜反射镜是环形激光器谐振腔的关键元件之一,首先设计和制备了工作角度为45的低损耗高反膜。为了提高低损耗高反膜的光学性能,采用高温热处理的方式,研究了热处理对低损耗高反膜的透射率、散射系数、表面粗糙度、相移等特性的影响。高温热处理对高反膜的散射系数、表面粗糙度影响较小,随着热处理温度的增加,高反膜相移逐渐降低。当退火温度为550 ℃时,环形激光器输出性能稳定性最好,当工作230 h 后,输出能量仅下降到初始值的90.5%。实验结果表明,采用合适的热处理方式,可以有效改善低损耗高反膜特性以及环形激光器的输出性能。     

钝化层退火工艺引入的氢对P-Flash存储器耐久性的影响

研究了钝化层退火工艺引入的氢对P-Flash存储器耐久性的影响,建立了这一影响的物理模型,阐明了耐久性退化的机理。在四种不同测试条件下,对P-Flash存储器进行了编程/擦除的耐久性测试。测试结果表明,在高温且延时的条件下,器件的耐久性最差。耐久性与编程/擦除之间的延时相关,延时越长,耐久性衰减越严重。在器件编程后的延时过程中,SiO₂/Si界面处被氢原子钝化的硅悬挂键发生断裂。氢原子的不稳定性导致更多的界面陷阱电荷和氧化层电荷的产生,使得阈值电压负向偏移,造成负偏压温度的不稳定。通过优化BEOL工艺,可有效改善P-Flash存储器的耐久性。     

Annealing effects on the formation of semiconducting Mg2Si film using magnetron sputtering deposition

Semiconducting Mg2Si films were synthesized on silicon (11 1) substrates by magnetron sputtering deposition and subsequent annealing in an annealing furnace filled with argon gas,and the effects of heat treatment on the formation and microstructure of Mg2Si films were investigated.The structural and morphological properties were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM),respectively.The results show that the crystal quality of Mg2Si films depends strongly on the annealing temperature,the annealing time and the deposited magnesium film thickness.Annealing at 400 ℃ for 5 h is optimal for the preparation of Mg2Si film.XRD and SEM results show that magnesium silicide film with various orientations is formed on the silicon surface because of the interdiffusion and reaction of magnesium with substrate silicon atoms,and the evolution of surface features on growing films is very dependent on the annealing temperature and time.     

Surface and optical properties of silicon nitride deposited by inductively coupled plasma-chemical vapor deposition

The surface and optical properties of silicon nitride samples with different compositions were investigated.The samples were deposited on InP by inductively coupled plasma chemical vapor deposition using different NH3 flow rates.Atomic force microscopy measurements show that the surface roughness is increased for the samples with both low and high NH3 flow rates.By optimization,when the NH3 flow rate is 6 sccm,a smooth surface with RMS roughness of 0.74 nm over a 5 × 5μm2 area has been achieved.X-ray photoelectron spectroscopy measurements reveal the Si/N ratio of the samples as a function ofNH3 flow rate.It is found that amorphous silicon is dominant in the samples with low NH3 flow rates,which is also proved in Raman measurements.The bonding energies of the Si and N atoms have been extracted and analyzed.Results show that the bonding states of Si atoms transfer from Si0 to Si+4 as the NH3 flow rate increases.     

氮化硅微腔中的光学频率梳(特邀)

具有高品质因子（Q 值）的光学谐振腔能够长时间将光束缚在较小的模式体积内,极大地增强了光与物质的相互作用,成为集成光学器件中具有重大潜力的重要组成部分。聚焦于目前广泛应用于集成非线性光学领域的氮化硅材料平台,为了解决大尺寸氮化硅微环腔由拼接误差、表面粗糙等因素导致的散射损耗较大的问题,进行了一系列的工艺改进以提高大尺寸氮化硅微环腔的品质因子。结果表明:通过薄膜再沉积工艺可以有效降低氮化硅波导的散射损耗,半径为560 μm的大尺寸氮化硅微环腔的本征Q值得到了平均26% 的提升。得益于提高的微腔Q 值,在氮化硅微环腔中实现了重复频率40 GHz 的光学频率梳。     

Characteristics of Metallic Waveguides Inhomogeneously Filled with Dielectric Materials with Surface Plasma Layers

The propagation of millimeter waves in metallic waveguides inhomogeneously filled with dielectric materials having surface plasma layers is characterized. The modal phase shift and attenuation of a 94-GHz wave are computed for a 10-µm plasma layer thickness as a function of carrier density. In the unexcited state, 90 percent of the millimeter-wave power is confined to the interior air region of the guide, while the remaining 10 percent propagates in the semiconductor insert. In the excited state at high injection levels, over 99 percent of the wave power propagates in the air region. Consequently, in this state, the waveguide will have a very low loss. A resonant cavity using the waveguide configuration shown to have a wide tuning range and high cavity Q.     

An optical-fiber-based probe for photonic crystal microcavities

We review a novel method for characterizing both the spectral and spatial properties of resonant cavities within two- dimensional photonic crystals (PCs). An optical fiber taper serves as an external waveguide probe whose micron-scale field is used to source and couple light from the cavity modes, which appear as resonant features in the taper's wavelength-dependent transmission spectrum when it is placed within the cavity's near field. Studying the linewidth and depth of these resonances as a function of the taper's position with respect to the resonator produces quantitative measurements of the quality factor (Q) and modal volume (V/sub eff/) of the resonant cavity modes. Polarization information about the cavity modes can be obtained by studying their depths of coupling when the cavity is probed along different axes by the taper. This fiber-based technique has been used to measure Q/spl sim/40,000 and V/sub eff//spl sim/0.9 cubic wavelengths in a graded square lattice PC microcavity fabricated in silicon. The speed and versatility of this fiber-based probe is highlighted, and a discussion of its applicability to other wavelength-scale resonant elements is given.