有机无机钙钛矿薄膜的间歇式退火和光电性能

为了改进空气环境条件下有机无机钙钛矿薄膜的制备工艺,开发了一种间歇式退火（intermittent annealing,IA）方法,以制备高质量无针孔的钙钛矿薄膜,优化光电性能.采用扫描电子显微镜（scanning electron microscope,SEM）、X射线衍射谱（X-ray diffraction,XRD）、紫外可见吸收（ultraviolet-visible,UV-Vis）光谱、光致发光（photoluminescence,PL）光谱等表征,系统比较了在空气环境条件下反溶剂一步法旋涂制备钙钛矿薄膜工艺中,普通退火（traditional annealing,TA）方法和间歇式退火方法处理得到的卤化铅甲胺有机钙钛矿薄膜的形貌、结构和光电性能.结果表明,对于MAPbI₃、MAPbIBr₂和MAPbI₂Br钙钛矿材料,采用间歇式退火方法制备的薄膜均匀致密无针孔,晶粒尺寸显著增大,薄膜结晶性提高,在可见光范围内光吸收能力更强.在空气环境下所得间歇式退火制备的MAPbI₃太阳能电池器件在AM 1.5的模拟太阳光下,光电转换效率可达11.5%（有效面积0.24 cm²）,而在空气环境下以普通退火方法制备的器件的光电转换效率为8.9%,间歇式退火样品的光电转换效率有大幅度提高.

     

掺杂剂对聚苯胺/二氧化钛复合薄膜氨敏特性的影响

室温条件下,采用平面叉指电极式器件,运用原位化学氧化聚合和静电力自组装相结合的方法分别制备了盐酸掺杂和对甲苯磺酸掺杂聚苯胺/纳米二氧化钛(PANI/TiO2)复合薄膜气体传感器,并通过电子扫描显微镜(SEM)对薄膜进行了分析表征,研究了其在常温下对NH3气的敏感特性。实验结果表明,盐酸掺杂PANI/TiO2复合薄膜较对甲苯磺酸掺杂PANI/TiO2薄膜具有更好的灵敏度和响应恢复特性以及更好的稳定性。该研究有助于开发低功耗、高灵敏度的NH3气体传感器。     

紫外光驱动微纳结构薄膜的气敏特性研究

采用基于有机模板的溶液浸渍-无损转移法制备ZnO微纳多孔有序薄膜,研究了在不同紫外光强度照射下和不同尺寸孔径的ZnO微纳多孔有序薄膜对NO₂气敏性能的影响。结果表明,以500 nm聚苯乙烯（PS）球为模板制备的ZnO微纳多孔薄膜传感器,在0.35 mW/cm3紫外光照射下具有较高的灵敏度、较快的响应和恢复时间。随着紫外光强度的增强和孔径尺寸的增大,ZnO微纳多孔薄膜传感器的灵敏度降低;且在紫外光照射下ZnO微纳有序多孔薄膜对乙醇、甲醛、H₂S、SO₂和CH₄等气体具有很好的选择性。     

聚吡咯/二氧化钛复合氨敏薄膜的制备及特性研究

采用静电力自组装和原位化学氧化聚合相结合的方法制备了聚吡咯/纳米二氧化钛(PPy/TiO_2)复合薄膜,并进行了表面电阻测试及紫外-可见光谱分析、原子力显微镜分析．利用平面叉指电极结构制备了PPy和PPy/TiO_2薄膜气体传感器,研究了其在常温下对有毒气体NH_3的敏感性．结果表明,相同条件下PPy/TiO_2复合薄膜传感器的响应/恢复时间均优于PPy薄膜传感器．同时测试了PPy/TiO_2复合薄膜传感器的湿度特性和稳定性．     

表面修饰的ZnPc薄膜晶体管性能研究

以热生长的SiO2作为栅绝缘层,酞菁锌(ZnPc)作为有源层,研究了具有十八烷基三氯硅烷(OTS,C18H37SiCl3)/SiO2双绝缘层结构的有机薄膜晶体管(OTFT)。实验表明,采用OTS可以有效地降低SiO2栅绝缘层的表面能并改善表面的平整度,器件的场效应迁移率提高了3.5倍,漏电流从10-9A降到10-10A,阈值电压降低了5 V,开关电流比从103增加到104。结果显示,具有OTS/SiO2双绝缘层的器件结构能有效改进OTFT的性能。     

MgAl/PbPc/Cu有机薄膜二极管的制备与气敏特性分析

选用酞菁铅作为有机半导体气敏材料,用真空热蒸镀、磁控溅射等镀膜方法制备器件,所制备薄膜二极管的结构为MgAl/PbPc/Cu,使用Keithley 4200半导体测试仪与气敏测量系统分析器件肖特基二极管的气敏特性,通过对电流-电压特性的实测数据进行深入的理论分析,比较出器件对不同浓度NO2气体的敏感程度.经过测试结果可知:当器件置于10-5的NO2气体74 min后,正向电流减小65倍,对应的MgAl/PbPc肖特基势垒高度约上升了20 meV.同时由于被吸附NO2气体的PbPc薄膜少数载流子电子数目的增加,导致器件的反向电流增加4倍.     

硫粉气化温度对制备WS2薄膜的影响

采用熔融盐辅助化学气相沉积（CVD）法在蓝宝石（Al₂O₃）衬底上制备WS2薄膜,改变硫粉的气化温度（750~800 ℃）,探寻其对WS₂薄膜生长的影响,为制备出大面积WS₂薄膜提供理论依据。采用光学显微镜、扫描电子显微镜（SEM）和拉曼（Raman）光谱对WS₂薄膜的形貌、结晶性和厚度进行分析。800 ℃时,WS₂薄膜平均边长可达310 μm,Raman特征峰的波数差为64.60 cm^-1（单层）。随着硫粉气化温度的升高,WS₂薄膜的生长经历了形貌及尺寸的转变,这表明在沉积过程中,硫粉引入时机对WS₂薄膜的形核、生长至关重要,适当的气化温度可以制备出尺寸较大、结晶性能良好的WS₂薄膜。     

溶胶-凝胶法制备（Nd,Bi）_4Ti_3O_（12）铁电薄膜

采用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上制备了（Nd,Bi）4Ti3O12薄膜。将薄膜于空气中分别进行每1层、每2层、每3层500℃预退火10 min,最后于氮气氛中680℃退火30 min。结果表明：预退火工艺对薄膜的结构和铁电性能都有影响：每一层预退火处理的薄膜具有较大的剩余极化值和最小的矫顽场（2Pr=47.8μC/cm2,2Ec=254 kV/cm）。所有薄膜都呈现良好的抗疲劳特性。     

垂直结构ZnO薄膜晶体管制备与工作特性

针对目前发表的氧化物薄膜晶体管的研究成果中,存在着驱动电压高,工作电流小的问题,制备了垂直结构的氧化锌薄膜晶体管.器件制备是以石英玻璃为衬底,采用磁控溅射工艺,以氧化锌薄膜为有源层.测试结果表明,制备的晶体管驱动电压低、工作电流大、载流子迁移率高.在偏压条件VGS为0.2 V,VDS为3 V时,漏源极电流IDS达到9.15 mA,开启电压Vth仅在1.35 V左右,可以作为有机发光二极管的驱动单元,具备了实用化特性.     

ZnO薄膜制备及其有机蒸汽敏感特性分析

采用直流磁控溅射法进行ZnO薄膜的制备,探讨了O2/Ar对薄膜方块电阻,退火对薄膜结构的影响.在对不同退火温度的ZnO薄膜的气敏特性进行测试后表明:较低的退火温度有利于提高器件气敏特性,其中经600℃退火的ZnO薄膜的灵敏度最高,其最佳工作温度为350℃.实验制备的ZnO薄膜对丙酮、汽油等有机蒸汽都有较高的敏感性和较短的响应-恢复时间,呈现对有机蒸汽敏感的广谱性.     

The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property

In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.The multi-walled carbon nanotubes(MWCNTs)/α-sexithiophene(α-6T)bilayer films were used as the active layer,andα-6T single layer sensitive film was also prepared for comparison purpose.The electrical and trace NO2-sening properties of these two OTFT gas sensors were tested and analyzed.The results showed that,the OTFT device based on MWCNTs/α-6T bilayer had obviously better electrical properties,better stabilities and higher NO2-sening response values than the device withα-6T single layer,in which both the carrier mobility(μ)and on/off current ratio enhanced two order of magnitude.The improved performance of bilayer OTFT can be explained that MWCNTs acted as highly conducting bridges connecting the crystalline terraces in theα-6T film.Threshold voltage(VT),carrier mobility,on/off current ratio and grid current which showed extremely similar variation trend as source-drain current,were optional parameters to reveal the gas-sensing characteristic of OTFT gas sensors.Morphology analysis showed that the special feature of MWCNTs had certain influence on the gas-sensing properties.     

Flexible organic thin-film transistors based on poly(3-hexylthiophene) films for nitrogen dioxide detection

Flexible nitrogen dioxide(NO_2) gas sensors based on organic thin-film transistors(OTFTs) were developed in this work, in which conductive indium tin oxide(ITO) coated polyethylene naphthalene-2,6-dicarboxylate(PEN) was designed for the flexible substrates, and poly methyl methacrylate(PMMA) and poly(3-hexylthiophene)(P3HT) was spin-coated as the gate dielectric layer and spray-deposited as the active layer, respectively. The effects of PMMA concentrations and P3HT solution volume on performances of flexible OTFTs were systematically investigated. The results showed that the optimized flexible OTFT exhibited high field-effect mobility(9.51×10~(–3) cm~2/(V s) at a gate bias of –50 V) and excellent response characteristics,including high sensitivity(up to 0.169 ppm~(–1)), good repeatability and selectivity. The flexibility of the developed OTFT sensor was also investigated, and the results showed that the electrical and gas-sensing properties were affected by the bending cycles,thus further work should be done for improving the flexibility of the sensor. This work provides an effective approach in developing high performance flexible OTFT NO_2 gas sensor.     

粉末溅射ZnO薄膜酒敏元件

针对金属氧化物薄膜气敏元件传统制造工艺中存在的掺杂不稳问题,开发了一种实用化的ZnO薄膜气敏基材料.采用粉末溅射法研制ZnO:1%CeO2薄膜,利用衬底Al2O3与ZnO晶体均为六方结构的特点,选择适当溅射参数研制出薄膜气敏元件,同时通过悬挂芯片双点焊工艺,使元件更加小型化.长期检测结果表明,此类元件气敏特性和稳定性良好,适合进一步推广应用.     

新型金属氧化物薄膜气敏元件基材料的开发

根据电导气敏机理的氧负离子理论,提出制备n型金属氧化物气敏基材料的理论,指出禁带宽度Eg＞2eV的金属氧化物材料都有可能研制薄膜气敏元件,并通过Fe2O3／1％Sb2O3和TiO2薄膜元件的制备和表征,论证了该理论的正确性.     

MoO3源漏电极缓冲层对有机薄膜晶体管性能的影响

以并五苯(pentacene)作为有机薄膜晶体管(OTFTs)的载流子传输层,采用比常用金电极(Au)廉价的Ag作为源漏电极,在pentacene与Ag之间添加MoO3超薄层作为缓冲层,制备了具有较高场效应迁移率(μ)的晶体管器件。结果表明,器件在栅极电压VG为40 V时,传输电流IDS超过了50 μA,空穴迁移率达到0.26 cm2/Vs。同时,从器件的输出特性与物理机制分析了MoO3缓冲层在器件中的作用。     

Microstructure control of organic semiconductors via UV-ozone for high-sensitivity NO2 detection

Developing high sensitive organic semiconductors(OSCs) in organic thin-film transistors(OTFTs) is the key for OTFT based gas sensors. Herein, we report a simple processing route of highly sensitive OSCs for high performance OTFT based nitrogen dioxide(NO_2) sensors, where the active OSC layer is based on ultraviolet-ozone(UVO) treated poly(3-hexylthiophene-2,5-diyl)(P3HT). Compared to conventional P3HT based OTFT sensors, the reported device exhibits a remarkable improvement of the gas response from 350% to 30000%. The studies in morphologies, chemical compositions and microstructures of the UVOtreated films reveal that a large number of carrier traps generated in the P3HT films is the decisive reason for the enhancement of sensing performance. Moreover, the optimized device shows great potential of practical applications on the stand points of sensitivity, selectivity, reusability and the ability of recovery, as well as limit of detection of ～7.3 ppb. This simple method provides an innovative understanding for the role of the carrier traps in sensing performance and demonstrates a bright future for developing high performance OTFT gas sensors.     

The mobility improvement of organic thin film transistors by introducing ZnO-nanrods as an zctive layer

Organic thin film transistors (OTFTs) based on poly(3-hexylthiophene) (P3HT)/Zinc oxide (ZnO) nanorods composite films as the active layers were prepared by spray-coating process. The OTFTs with P3HT/ZnO-nanorods composite films owned higher carriers mobility than the OTFT based on pure P3HT. It can be found that the mobility of OTFTs increased by 135% due to ZnO-nanorods doping. This was attributed to the improvement of the P3HT crystallinity and the optimization of polymer chains orientation. Meanwhile, because of the distinction of work function between P3HT and ZnO, the majority carriers would accumulate on either side of the P3HT-ZnO interface which benefited carrier transfer. The influence on the mobility of composite film was studied. In addition, the threshold voltage of devices changed positively with the increase of ZnO-nanorods due to the decrease of electrostatic potential for P3HT/ZnO-nanorods composite films. The effect could be explained by the energy level theory of semiconductor.     

Pd/V_2O_5薄膜的氢气敏感性质研究

采用磁控溅射法制备了不同厚度的Pd/V2O5双层复合薄膜,采用紫外-可见光分光光度计研究了薄膜的氢气敏感性质,原位测量了薄膜的激光拉曼光谱并分析了薄膜的氢气敏感机理。结果表明,复合薄膜V2O5(280 nm)/Pd(30nm)对氢气的敏感性质较好,对0.01%H2-N2有响应,在4%H2-N2标气中,在560 nm处透过率的相对变化值达到25%。拉曼光谱分析结果表明,Pd/V2O5薄膜在与氢气作用过程中,Pd膜主要起催化作用,氢原子扩散到V2O5层,V5+转变为V4+,导致Pd/V2O5薄膜的透过率发生变化。