表面等离激元纳米结构增效的光电探测器进展（特邀）

光电探测器作为航空航天、深空探测和环境监测等领域的核心器件之一,具有重要的科学研究和实用价值。表面等离激元具有可突破光学衍射极限、实现纳米聚焦的性质,为光电探测器的性能提升提供了全新的技术手段,是近年来光电探测增效研究领域的热点之一。文中围绕表面等离激元纳米结构增效的光电探测器研究展开综述,首先介绍了各类表面等离激元纳米结构的物理特性,主要包括局域表面等离激元结构和传导型的表面等离极化激元结构,以及由表面等离激元金属和半导体材料构成的异质结构;然后重点从探测器性能、探测原理和工艺方法等角度,介绍了等离激元纳米结构增强的光电探测器的研究进展;最后对表面等离激元纳米结构增效的光电探测器及其在未来面临的挑战进行了总结和展望。     

基于表面等离激元的石墨烯光电探测器研究进展

光电探测器作为一种重要的光电子器件,提高其性能是广受关注的研究课题.近年来,采用纳米结构突破了原有红外光电探测器发展的瓶颈,越来越多的人使用金属纳米颗粒、纳米结构图形化石墨烯、谐振腔等激发表面等离激元,促进光-物质交互作用,得到了高性能光电探测器.文中从图形化石墨烯、金属纳米颗粒、量子点、周期性纳米结构几个方面介绍了基...     

等离激元纳米杯的研究进展

等离激元纳米杯因其结构的非对称分布,显示出独特的电场磁场分布调制、光弯曲、强光散射和高光热转换效率等特性,其制备方法和多领域应用都获得了广泛研究。综述了等离激元纳米杯特别是金纳米杯的制备方法,包括基于微纳加工的物理制备方法和湿化学合成方法,分析对比了各种制备方法的优缺点及适用领域。介绍了等离激元纳米杯的光物理学特性,包括等离激元共振模式、吸收散射光谱特性和电场磁场特性,着重展示了纳米杯参数调谐特性。总结了等离激元纳米杯在光电器件和生物医学等领域的重要应用。最后对等离激元纳米杯的发展趋势与挑战进行了展望。     

纳米颗粒局域表面等离激元共振的光谱特性研究进展

LSPR与以往的SPR相比,具有独特的光学特性,在紫外-可见光区域表现强吸收作用的光学响应,且在温度,生物以及化学等传感器领域做出了比较独特的研究。通过对LSPR在传感器领域已有成果的论述,将这些内容呈现给读者。     

等离激元太阳能电池概述

贵金属纳米粒子的表面等离激元共振峰附近的光散射可以有效的增强薄膜太阳能电池光吸收效率.基于等离激元方法设计的太阳能电池可以很大程度上增强光吸收,并且减少太阳能电池的光吸收层厚度从而减小体积.本文针对等离激元增强太阳能电池性能的原理进行介绍,并且对其未来发展趋势进行了展望.     

基于硅-绝缘体结构的石墨烯等离激元波导

提出一种由硅-绝缘体(SOI)结构与涂覆石墨烯层的纳米线(GCNW)构成的低损耗波导结构,采用有限元方法详细研究波导结构中石墨烯等离激元基模传输特性对频率、几何参数、材料参数以及石墨烯化学势的依赖关系.仿真结果表明,该波导中低折射率的SiO2介质层可实现高性能的深度亚波长光约束.得益于低折射率的SiO2介质层和SOI衬...     

等离激元纳米海胆结构增强热载流子的产生与注入

等离激元激发产生的热载流子可以有效驱动化学反应的发生,进而实现太阳能的高效利用。合理设计等离激元金属纳米结构是提高热载流子产生与注入效率,进而实现超宽光谱吸收和高效能量转换的有效途径。本课题组制备了具有高密度尖端的等离激元纳米海胆颗粒,并构建了金属半导体复合结构的光阳极,通过测试光阳极微反应区的光电流响应评估了热载流子的产生与注入效率。结果表明：纳米海胆结构具有优异的光电催化活性,其尖端处的大量热点促进了热载流子的产生,金属与半导体间丰富的界面接触增加了热载流子的注入机会。该设计为热载流子的高效激发与提取提供了参考。     

复合结构的等离激元模式耦合关系及光学特性研究

提出一种以Au为材料的正方形框和中空圆柱嵌套的亚波长周期性复合结构,采用时域有限差分算法对复合结构进行数值模拟研究.研究发现,波长在400～900 nm的线偏振平面波垂直入射情况下,最小的透过率能达到7.46％,最小的半峰全宽能达到7.25 nm,最大的反射率为87.61％,最大吸收率达到38.00％,且表现出透射光谱...     

AlGaN/GaN异质结紫外探测器

采用P-AlxGa1-xN/i-GaN/n-GaN异质结构成功制备了含铝组分分别为0.1和0.07的正照射可见盲紫外探测器,并分别测试了它们的伏安特性曲线和光电响应光谱.对于Al分为0.1的器件,在零偏压处出现了极低的暗电流密度,表明器件具有非常高的信噪比.高分辨率X射线衍射仪对材料的测试结果表明,高铝组分(0.1)窗口层薄膜材料的晶体质量较差,导致暗电流增大,而其窗口层的窗口选择作用则可以得到较高的响应率和较宽的响应波段.     

AlGaN/GaN异质结紫外探测器

采用p-AlxGa1-xN/i-GaN/n- GaN异质结构成功制备了含铝组分分别为0.1和0.07的正照射可见盲紫外探测器，并分别测试了它们的伏安特性曲线和光电响应光谱。对于Al组分为0.1的器件，在零偏压处出现了极低的暗电流密度，表明器件具有非常高的信噪比。高分辨率X射线衍射仪对材料的测试结果表明，高铝组分(0.1)窗口层薄膜材料的晶体质量较差，导致暗电流增大，而其窗口层的窗口选择作用则可以得到较高的响应率和较宽的响应波段。     

Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction

Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical absorption properties.In this study,we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices.The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics,and the photoresponsivity reached 1.8 mA/W at 1550 nm.In addition,the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated,and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm.Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection,which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures.     

All-optical Control of surface plasmon polaritons based on metal slit structures

表面等离激元是束缚在金属—介质交界面上的一种电磁波模式,可突破衍射极限,被认为是下一代集成光子回路最有希望的信息载体。基于我们的研究工作,就几种表面等离激元金属狭缝结构的原理和应用做了简单概述。利用法布里-波罗谐振腔、法诺共振、多模干涉等光学效应,这些金属狭缝结构可对表面等离激元的传输行为进行有效地调控。在理论上和实验上,利用金属狭缝结构实现了亚波长表面等离激元单向激发器、亚微米宽带单向激发器、亚微米分束器、超紧凑纳米聚焦器件和亚微米全光开关等纳米光子器件。这些纳米光子器件在纳米集成光学中具有重要应用。     

n-ZnO/p-GaN异质结紫外探测器及其光电性能研究

利用脉冲激光沉积(PLD)方法在p-GaN衬底上沉积了n-ZnO薄膜,构造了n-ZnO/p-GaN异质结型紫外(UV)光-电探测器原型器件,在(UV)光照条件下测试了器件的光电性能。扫描电镜(SEM)和X射线衍射(XRD)测试结果表明,ZnO薄膜具有很好的结晶质量;I-V曲线显示,器件在黑暗和光照环境下都表现出明显的整流行为;光谱响应曲线表明,器件响应度峰值出现在364nm附近,当反向电压为-5V时光电流达到饱和,此时响应度峰值达到1.19A/W。不同反向工作电压下的光谱探测率曲线表明,器件对364nm附近的UV光有较强的选择性,在-2V偏压下具有最佳的探测率,其探测率峰值达到8.9×1010 cm·Hz1/2/W。     

Efficient organic near-infrared photodetectors based on lead phthalocyanine/C60 heterojunction

High efficiency organic small molecule near-infrared photodetectors (NIR-PDs) based on a lead phthalocyanine/C₆₀ planar heterojunction are demonstrated. The NIR-PDs show a broad-band response that extends to 1100 nm. The performance of the NIR-PDs is improved by using CuI as anode buffer layer. The optimized NIR-PD exhibits a response peak at about 900 nm with external quantum efficiencies (EQEs) of 19.7% at zero bias and 35.1% at −6 V, which are higher than other small molecule NIR-PDs reported. Comparable EQEs of 18.0% at zero bias and 33.2% at −6 V are found in the NIR-PD by further using 4,7-diphenyl-1,10-phenanthroline as cathode buffer layer. Meanwhile, the dark current is significantly reduced, which results in a high detectivity of 2.34 × 10¹¹ Jones at zero bias, which is among the highest detectivities reported for organic small-molecule NIR-PDs. Besides, the NIR-PDs show a reliable stability in ambient condition.     

Ultraviolet photodetector based on NaTaO3/ZnO composite with enhanced photoelectric performance

NaTaO₃/ZnO composites were synthesized via a two-step hydrothermal method. Then ultraviolet detectors based on pure NaTaO₃, ZnO and their composites with different mole ratio were fabricated. Among all the devices, the 1:1 NaTaO₃/ZnO possessed a high photo-to-dark current ratio and stable periodic photoresponse. The photoresponse is facilitated by the synergistic effect between different components and the improved Zn O morphology in the composites, the reduced dimensionality in which provides a straight electron conduction pathway. Additionally, the 1:1 NaTaO₃/ZnO detector also exhibits a low dark current less than 1 n A at 5 V bias, which benefits a lot to the low power dissipation and high sensitivity of devices. These results reveal that Na TaO₃/ZnO composites are good candidates for the fabrication of ultraviolet detectors.     

ZnSb/Ti3C2Tx MXene van der Waals heterojunction for flexible near-infrared photodetector arrays

Two-dimension (2D) van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared (NIR) photodetector. Here, we report the successful fabrication of ZnSb/Ti₃C₂T_x MXene based flexible NIR photodetector array via a facile photolithography technology. The single ZnSb/Ti₃C₂T_x photodetector exhibited a high light-to-dark current ratio of 4.98, fast response/recovery time (2.5/1.3 s) and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti₃C₂T_x MXene nanoflakes, and the formed 2D van der Waals heterojunction. Thin polyethylene terephthalate (PET) substrate enables the ZnSb/Ti₃C₂T_x photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles. Moreover, the ZnSb/Ti₃C₂T_x photodetectors were integrated into a 26 × 5 device array, realizing a NIR image sensing application.