陶瓷表面激光无钯活化及其化学镀镍

为了实现陶瓷基体表面无钯化学镀镍,以10g/L NiSO₄·6H₂O和45g/L NaH₂PO₂的混合溶液为活化液涂覆于基体表面,利用激光扫描后使基体活化,再进行化学镀镍。研究了激光功率、光斑直径以及扫描速率对镀层覆盖率的影响,通过扫描电镜观察了粗化、活化以及施镀后的微观形貌,并对活化及施镀后的基体表面进行了成分分析,对镀层结合性、导电性以及可焊性进行了检测。结果表明,当以激光功率为3W、光斑直径为2mm、扫描速率为5mm/s对基体进行扫描时,基体表面生成一层平均直径为0.1μm的Ni微粒;施镀后,镀层覆盖率为100%;镀层微观表面平滑、致密,晶胞直径均在10μm以上;镀层中P的质量分数为0.0771,为非晶态结构,具有良好的耐磨性和耐腐蚀性能;镀层具有较强的结合性和良好的可焊性,电阻率为7.67×10-5Ω·cm,为良导体。该工艺成本低、无污染,能实现陶瓷基体表面局部化学镀镍,通过对激光的运动控制,能够使基体表面沉积各种精细图形,具有一定的实用价值。     

2024铝合金激光除漆参数优化及表面性能分析

为提高激光除漆效率与质量,采用响应面分析法对激光除漆后基体表面粗糙度进行优化研究。通过建立激光除漆工艺参数二次多项式回归模型,验证模型适应性,进一步对比分析最优参数除漆后的基体表面性能。结果表明,激光功率与激光频率对基体表面粗糙度影响显著,扫描速度与扫描次数对表面粗糙度影响较小。当2024铝合金基体的油漆厚度为100μm时,响应曲面分析法得出的最优参数为：激光功率45 W、激光频率400 kHz、激光扫描速度600 mm/s、扫描次数6次。试验测得除漆后基体表面粗糙度S_a为1.739μm,仿真与试验误差率仅有0.6%。对比发现,激光除漆后基体表面宏观形貌高低不平、存在激光扫描痕迹,表面粗糙度S_a从1.319μm增加到1.739μm。从微观层面发现基体表面存在钝化层与隆起的熔融物,局部区域更加光滑平整,基体化学成分没有改变。激光除漆后基体显微硬度从平均141.59 HV降低到130.37 HV,腐蚀速率由原来的0.008 852 0 mm/a减小到0.002 340 4 mm/a,基体显微硬度降低,耐腐性提高。虽然激光除漆后基体表面形貌与表面性...     

激光熔覆35.8%Fe-20%Ti-20%Al-24%Cr-0.2%Y2O3涂层组织与性能研究

采用激光熔覆工艺在304不锈钢板表面制备质量分数35.8%Fe-20%Ti-20%Al-24%Cr-0.2%Y₂O₃的合金涂层,并对涂层的组织、元素分布和力学性能等进行了表征。结果表明：激光功率2200 W、扫描速率5 mm/s、搭接率50%条件下,获得的一次成型涂层,其组织均匀致密,无裂纹、气孔等缺陷;涂层与基体间为冶金结合,稀释率为7.31%;涂层相组成为(Fe,Cr)Al、Y₂TiO₇和TiO₂,晶粒平均尺寸为6.7μm;涂层具有较高的硬度和良好的高温耐磨性能,硬度达到550 HV(基体为210 HV),400℃条件下磨损试验质量损失率仅为304不锈钢的3.67%。     

激光清洗2A12铝合金复合漆层的技术研究

采用脉冲激光器对2A12铝合金基体表面涂覆的环氧树脂底漆与丙烯酸聚氨酯面漆进行激光清洗试验,针对激光清洗表面的形貌、粗糙度及元素含量进行分析。结果表明：在激光能量密度和激光扫描速度分别为4.45 J/cm²和8 mm/s时,能完全去除面漆且底漆保留完好,并获得了最接近底漆层原始厚度的残余漆层;在此激光能量密度下,当激光扫描速度为5.5 mm/s时,能完全去除复合漆层,且此时阳极氧化膜层的微观形貌完好,氧元素质量分数约为40%,清洗表面的粗糙度R_a=1.138μm。当参数组合为3.56 J/cm²和6 mm/s时,也能完全去除面漆且底漆保留较好;当激光能量密度为4 J/cm²和激光扫描速度为5 mm/s时,能完全去除复合漆层,此时阳极氧化膜表面上氧元素的质量分数约为34%。本研究证明了通过选择合适的激光工艺参数组合能够调控激光清洗质量,验证了激光分层清洗的可行性。     

纳米复合镀Al2O3层激光强化

在H13钢表面通过纳米复合镀(NCP)的办法预置纳米Al2O3镀层,然后通过高功率连续CO2激光处理预置表面,采用扫描电子显微镜(SEM)观察了镀层处理前后表面及截面形貌,利用X射线能谱(EDS)仪、X射线衍射(XRD)仪对处理前后的镀层进行了元素分析和物相分析,测试了处理前后镀层显微硬度及磨擦系数的变化。结果表明,激光处理后,强化层表面平整光滑,与基体形成冶金结合,成分均匀,组织细密。纳米Al2O3颗粒均匀分布在强化层表面,强化层显微硬度为原镀层的1.5~1.8倍,强化层摩擦系数约为镀层的1/2,基体的1/3。强化层和基体的表面主要以磨粒磨损为主,而纳米复合镀层则是磨粒磨损和黏着磨损综合作用的结果。     

CO2激光直写PI薄膜温度、应力场仿真与分析

CO₂激光直写诱导碳基前驱体生成石墨烯过程中，温度与应力是影响石墨烯生成质量的主要因素。利用COMSOL Multiphysics仿真软件，建立连续CO₂激光作用于聚酰亚胺(PI)薄膜温度场与应力场模型，研究激光功率、光斑直径、扫描速度对平均升温速率(δ)及热应力的影响，并根据石墨烯生成温度阈值与薄膜受损温度阈值筛选出合理参数范围。仿真结果表明：在重复扫描策略下，薄膜正面平均升温速率δ₁与激光功率呈线性正相关关系，与光斑直径呈指数下降关系，与扫描速度呈幂函数单调递减关系，δ₁的较优范围为93.6℃/s≤δ₁≤147.8℃/s;背面平均升温速率δ₂与激光功率呈线性正相关规律，与光斑直径呈二次函数单调递减规律，与扫描速度呈线性负相关规律，δ₂的较优范围为69.5℃/s≤δ₂≤86.9℃/s。激光功率是影响热应力的主要因素，仿真结果与结论可为PI薄膜激光诱导石墨烯研究提供参考。     

基于纳米颗粒热效应的飞秒激光高效直写金属铜微结构

在Cu（NO₃）₂前驱体溶液中添加硅纳米颗粒,采用飞秒激光在透明基底表面成功直写了导电金属铜微结构。前驱体溶液中的硅颗粒作为吸光粒子吸收激光能量后对溶液进行加热,使Cu²⁺还原为金属铜并沉积在基底表面。结果表明：当激光光强为5.32×10⁹～8.51×10⁹ W·cm^-2、扫描速度为100～500 mm·s^-1时,微结构主要由铜、Cu₂O及微量硅组成,铜含量及微结构的导电性随着光强的增加或扫描速度的降低而逐渐增加;在光强为5.32×10⁹ W·cm^-2、扫描速度为100 mm·s^-1的条件下,铜微结构的方阻为0.28Ω·sq^-1,电阻率为4.67×10^-6Ω·m。与已有的飞秒激光直写铜微结构的技术相比,这种方法使激光光强降低了2个数量级,直写效率提高了1～3个数量级。     

激光改性硅酸盐玻璃表面局域制备金属铜层

为了实现普通硅酸盐玻璃表面的金属化,利用波长为355nm的脉冲紫外激光刻蚀粗化活化,并结合化学镀,在其表面局域制备出了导电金属铜层。研究了激光加工参量对玻璃表面微观形貌、粗糙度、刻蚀深度的影响规律,并在玻璃表面成功引入了钯元素。结果表明,当第1次紫外激光扫描速率为200mm/s、脉冲频率为100kHz、能量密度为27J/cm2~37J/cm2和填充间距在10μm左右时,玻璃表面可以获得的刻蚀深度在25μm~35μm之间,刻蚀区域的粗糙度R_a在6μm~7μm之间,此时玻璃不会开裂;而第2次激光的能量密度在9J/cm2~11J/cm2之间时（其余参量不变）,钯元素的引入实现了化学镀铜,此时铜层和玻璃之间的平均结合强度可以达到10MPa以上,铜层的体积电阻率可以达到10-6Ω·cm数量级。这是一种具有局域选择性、无需掩模、低成本、高结合强度和良好导电性的玻璃表面金属化工艺。     

镁合金表面激光熔覆Al-Si基纳米SiC复合涂层的组织及性能

纳米材料由于其结构的特殊性,具有一般材料难以获得的优异性能,为了将纳米材料的优异性能应用到镁合金表面改性当中,利用横流CO₂激光器在AZ31B镁合金基体上制备了Al-Si合金粉末+5%纳米SiC粉末复合涂层,采用光学显微镜、扫描电子显微镜观察了熔覆层的显微组织并分析了微区成分分布情况,激光熔覆层与基体结合良好,熔覆层的显微组织具有明显的结构特征,出现了大量的十字架结构。X射线衍射结果表明,激光熔覆层的组成相主要为Mg₂Si、Mg₂C₃、Mg₁₇Al₁₂、A_l3.21Si_0.47等。利用显微硬度仪进行了硬度测试,由于在激光熔覆过程中新形成的化合物起到了强化作用,熔覆层的最高显微硬度可达216 HV0.2,是基体的3倍多。     

激光冲击强化对Ti6Al4V钛合金骨板表面改性与摩擦学性能的影响

TiO₂纳米管具有纳米级空心盲腔排列结构,既可以提高Ti6Al4V骨板表面的生物相容性,又可以作为抗菌药物的载体,提高基体的抗菌能力。因此,TiO₂纳米管层在医用植入物方面具有巨大潜力。目前制备的TiO₂纳米管与基体之间的附着力较低,在使用过程中容易脱落;同时,基体的表面特性与TiO₂纳米管层之间的关系没有得到充分研究。鉴于此,本文采用激光冲击强化法来改变Ti6Al4V的表面特性,并在改性后的Ti6Al4V表面通过阳极氧化法制备了TiO₂纳米管层。在模拟体液条件下,研究了表面改性后骨板的摩擦磨损行为,并分析了表面改性后骨板的表面性能及耐磨性。结果表明:Ti6Al4V经过激光冲击强化后,晶粒细化程度提高;经阳极氧化后形成了排列有序、尺寸较大的纳米管,表面的显微硬度和表面接触角降低,TiO₂纳米管层的附着力、生物相容性和耐磨性提高。     

Preparation of Fine Copper Powder With Chemical Reduction Method and Its Application in MLCC

In this paper, the preparation of fine copper powder with chemical reduction method was investigated. Polyhedron nonagglomerated monodispersed copper powders by the reaction of CuSO₄ldr5H₂O and ascorbic acid were synthesized at pH 6~7 and reaction temperature of 60degC~70degC. It was also found by X-ray diffraction (XRD) analysis that a mixture of copper and cuprous oxide could be obtained when [Cu(NH₃)₄]²⁺ was reduced by ascorbic acid. Reaction temperature and pH have great effects on efficiency and particle size of copper powders. Copper powders were applied as terminal electrode materials of base metal electrode-multilayer ceramic capacitor (BME-MLCC), and the microstructures, including cross section and interface, of copper thick film were discussed with scanning electron microscopy. The results indicated that copper thick film has a loose, porous cross section and a rough interface. The adhesion strength of copper electrode is high due to rough microstructure caused by interfacial reaction.     

纯铜表面激光熔覆TiB2/Cu涂层的组织及导电性能

为了满足电磁导轨的使用要求,采用激光熔覆技术在纯铜表面通过预置粉的方式制备了不同成分TiB2/Cu涂层,用光学显微镜、扫描电镜和X射线衍射分析了涂层的微观结构及相组成。涂层由Cu和TiB2两相组成,当TiB2的质量分数分别为0.02,0.05和0.1时,涂层的显微硬度分别约为95HV0.1,105HV0.1和152HV0.1,电导率为22.9MS/m,20.4MS/m和16.4MS/m。涂层与基体呈良好冶金结合,无裂纹在,TiB2颗粒存在团聚现象,熔覆层组织为外延生长的柱状晶。结果表明,随着TiB2的含量增大,涂层显微硬度升高,涂层的电导率下降。     

Effects of deliberate copper contamination from the platingsolution on the electrical characteristics of MOSFETs

N-channel and p-channel metal-oxide-semiconductor (MOS) transistors of various (W/L) ratios down to 0.24-μm channel length have been used to investigate the effects of deliberate backside copper (Cu) contamination on the MOS field-effect transistor (MOSFET) electrical parameters. The backside of the wafer was flooded with copper sulphate (CuSO₄) solution and air-dried. High-temperature annealing was carried out to drive Cu into silicon. It was discovered that the backside Cu contamination did not result in any undesirable effects on the MOS device performance. The MOS device parameters such as threshold voltage V_TO, transconductance G_m, drain saturation current I_DSAT, off-current I_off, and junction leakage current for n⁺/p and p+/n diodes displayed no significant degradation, even after 5 h of annealing at 400°C in nitrogen ambient. Secondary ion mass spectroscopy data shows that Cu diffused into silicon only over a short distance, leading to little or no degradation of MOSFETs and junction diodes     

金属箔材无模激光多点冲击成形工艺研究

为了解决金属箔材微拉深工艺中高昂的微型模具设计制造成本问题,采用无模具激光冲击微成形方法,对脉宽5ns、直径50μm的高重复频率激光光斑微冲击成形20μm厚T2铜箔进行了理论分析和实验验证。结果表明,在约束层没有破损的情况下,凹坑深度h、凹坑底平面直径L₁和凹坑壁倾斜程度（L-L₁）随着单脉冲能量E及光斑搭接率增加线性增大;激光扫描内外圆周顺序对凹坑深度没有影响,但会对凹坑底平面直径有影响,先扫描外圆周时会形成更大的凹坑底平面直径,无需模具,凹坑形貌是可控的。这一结果对激光无模微拉深渐进成形的进一步研究是有帮助的。     

激光对羟基磷酸铜的还原机理研究

为了研究激光选区金属化技术中，激光与尖晶石型化合物的相互作用机理，选用质优价廉、具有尖晶石结构的可见光和近红外光敏催化物质羟基磷酸铜(Cu₂(OH)PO₄)作为研究对象，利用X射线光电子能谱技术，探讨了波长为1064nm纳秒脉冲光纤激光、连续光纤激光和波长为355nm的纳秒脉冲紫外激光与羟基磷酸铜的相互作用机理。结果表明，3种激光都能将羟基磷酸铜中的+2价铜元素(Cu2+)还原为+1价铜元素(Cu+)，但还原过程随激光功率(0.13W~3.89W)或激光能量密度(2.76J/cm2~25.48J/cm2)的变化呈现不同的规律; 结合羟基磷酸铜的热性能分析和紫外可见光吸收光谱分析，初步判断，在上述还原过程中，可能同时存在光热反应和光化学反应。该研究为羟基磷酸铜作为一种新型的激光活性物质提供了理论基础。     

激光裂解钛酸酯改性聚硅氧烷制备陶瓷涂层

为了解决先驱体转化陶瓷法中金属粉末活性填料在制备陶瓷涂层中分散不均的问题,采用激光裂解钛酸四丁酯改性聚二甲基硅氧烷法在金属基体表面制备陶瓷涂层,通过电子显微镜、X射线衍射和X射线光电子能谱等手段,取得了涂层表面并分析了激光裂解钛酸四丁酯改性聚二甲基硅氧烷生成物的组成与结构。结果表明,钛酸四丁酯添加量的质量分数为0.05时,涂层表面不同区域的Ti相对含量均在3%左右,Ti元素在涂层中分布均匀,钛酸四丁酯改性聚二甲基硅氧烷在激光作用下生成的陶瓷涂层主要由晶态的SiC,TiO₂,非晶态SiO₂,（TiO₂）₅₆（SiO₂）₄₄以及C₆H₁₈OSi₂等组成,激光裂解过程中新生的TiO₂,（TiO₂）₅₆（SiO₂）₄₄等陶瓷相对所制备的陶瓷涂层表面孔隙具有填补作用,使陶瓷涂层表面均匀平整致密,孔隙、缝隙基本消失,解决了金属粉末活性填料的分散问题。     

A Green Strategy to Synthesize Ag/Ag3PO4/Chitosan Composite Photocatalysts and Their Photocatalytic Degradation Performance under Visible Light Irradiation

In this work, the plasmonic Ag/Ag₃PO₄/chitosan (Ag/Ag₃PO₄/CS) composite photocatalyst was prepared by a low-temperature strategy. Environmentally friendly CS plays triple vital roles in this composite. First, it was devoted to in situ reducing metallic silver from silver ions of Ag₃PO₄. Also, as the carrier of Ag/Ag₃PO₄ nanoparticles, CS can effectively prevent aggregation. Furthermore, benefitting from the settlement of hydrophilic CS, the prepared composite could be easily separated and recovered from the solution system. X-ray diffraction (XRD), the scanning electron microscope, energy-dispersive X-ray spectroscopy (EDS), ultraviolet-visible (UV-vis) diffused reflectance spectroscopy, and X-ray photoelectron spectroscopy (XPS) were employed to characterize the properties of materials. The results of photo-decomposition testing showed that the Ag/Ag₃PO₄/CS composite possessed good activity for the decomposition of Rhodamine B (RhB) under visible light.     

Dielectric deposition process for Cu/SiO2 integration in a dual damascene interconnection architecture

A challenge to integrate Cu in device interconnections is to avoid Cu diffusion into silicon active zone that could seriously damage device performance, and into interlevel dielectric that could induce shorts or degrade dielectric performance. This paper relates the integration of Cu-CVD with SiO₂. Structures studied are SiO₂ deposited on Cu-CVD, and SiO₂/SiN/Cu structure: a thin SiN layer is deposited on Cu before SiO₂ to act as diffusion barrier and as an etch stop during the interconnect structure patterning. Both SiO₂ and SiN dielectric processes are made in plasma-enhanced chemical vapor deposition processes, from SiH₄ precursor with addition of, respectively, N₂O or NH₃. Cu contamination is shown to occur during the dielectric deposition onto Cu, and is enhanced by the fluorine presence in the deposition chamber. Deposition processes were evaluated in order to lower Cu contamination in the dielectric bulk. On an other hand, a noticeable degradation in Cu layer resistance was evidenced after dielectric deposition due to copper contamination during the dielectric deposition process. This issue can be addressed by the optimization of the dielectric deposition process.