一种新型2-DCT/IDCT结构的设计与实现

本文根据MPEG-2视频编码的特点,设计了仅由一个1-DCT核完成的2-DCT/IDCT结构,该结构的转换矩阵通过SRAM实现,具备双端口的输入输出,数据吞吐率较高,能够有效节省芯片面积.1-DCT核由7个乘法器组成,乘法器可以根据计算速度的快慢灵活设计.为了解决双端口无冲突的存储访问,提出了一个数据排列方案.由于乘法器的乘数之一为常数,我们设计了一种常数修改方案能够有效的降低成法器的硬件开销.该2-DCT/IDCT结构通过了FPGA验证,具有较强的工程实用价值.     

一种适合于SOC系统的JTAG扩展化可测性设计

随着集成电路系统复杂性的提高及基于 IP核的 SOC系统的出现 ,电路测试的难度不断增大 ,对电路可测性设计提出了更高的要求。文中在研究了现有各种可测性设计方法优劣后提出了扩展化的 JTAG可测性设计电路 ,它在稍增加电路复杂度的情况下融合各测试方法 ,并提出了利用这种测试电路的 IC系统测试方案。它克服了测试基于 IP核的 SOC系统的一些难点。     

IDCT IP核的VLSI结构

摘介绍了一种新型的IDCT IP核的VLSI结构，这种并行结构结合分布式算法和基于存储器的查找表，系统自顶向下分解为模块，设计出一个不需要乘法器的高性能IP核，可以实时处理MPEG2 MP@ML。     

一种适合SOC的时钟控制器IP核

随着集成电路系统的规模和复杂性的不断提高，基于IP核的SOC系统的设计已被广泛采用。与此同时，电路测试的难度不断增大，对电路的可测性设计也提出了更高的要求。文章介绍了应用于嵌入式系统的16住时钟控制器(Timer Control Unit)的IP核设计，设计中采用了JTAG可测性设计电路。     

基于累加器的内建自测方法研究与分析

在适于采用内建自测方法进行可测性设计的电路中，累加器往往是一种被普遍采用的基本单元，如通用处理器和数字信号处理电路中的算术及逻辑运算电路。文章以Booth乘法器为例，介绍了利用累加器电路进行内建自测输出响应分析的几种常见形式，同时给出了相应的故障覆盖率、硬件开销和时延等方面的比较结果。     

基于乘法器复用的信道化接收机的设计与应用

针对广播频段信道数量较多、信道带宽较窄的场景,给出一种基于乘法器复用的信道化接收机的高效FPGA实现方案,并详细说明了信道化处理模块。方案采用流水线结构,复用较少的乘法器,完成所有信道的信道化处理,解决了信道数量众多时乘法器使用过多的问题。不仅能够保证处理的实时性,还大大减少了信道化接收算法硬件实现中的关键资源。最后通过硬件仿真,验证了该信道化处理模块仅需要复用8个复数乘法器IP核即可完成128个信道的多相滤波。例化并使用2个信道化处理模块即可完成广播频段的信道化处理,并运行在102.4 MHz的系统时钟频率下。     

一种基于亚阈值区特性的CMOS四象限模拟乘法器

讨论了基于ＭＯＳ晶体管亚阈值区特性的ＣＭＯＳ四象限模拟乘法器的设计。分析了四种乘法器核的直流传输特性，给出的ＰＳＰＩＣＥ模拟结果验证了理论分析。模拟结果表明，对于电源电压为１．５Ｖ（或±１．５Ｖ），当输入电压范围限于±０．０８Ｖ时，非线性误差小于１％；－３ｄＢ带宽约为３４０ｋＨｚ，静态功耗小于１μＷ。给出的乘法器核可应用在便携式电子系统模拟信号处理电路中，特别适于在神经网络系统中的应用。     

一种高效的可伸缩分组并行有限域乘法器及VLSI实现

文章提出了基于全1多项式基的可伸缩分组并行有限域乘法器结构，并按照最低位先入和最高位先入的方式分别进行了算法描述，分别称为AOPBLSDM（AOP-Based LSD-first Digital-Serial Multiplier）和AOPBMSDM（AOP-Based MSD-first Digital-Serial Multiplier)。该乘法器的结构规整，适于VLSI实现；同时由于该乘法器具有面积和速度可伸缩度大的特点，因而可以在不同的应用场合下找到最佳的实现方案。理论分析及ASIC综合实现结果均表明，本文所提出的结构在面积和速度上具有一定的优势。     

用于FPGA的高效可测性设计

近几年,现场可编程门阵列（FPGA）的设计和制造技术高速发展,对于FPGA的测试也成为了一个重要的问题,高效的可测性设计方案对于降低测试成本、提高测试覆盖率和测试效率起着决定性的作用。将FPGA的开关矩阵结构和可测性设计（DFT）技术相结合,实现了FPGA定制电路知识产权（IP）核的高效测试方案,利用自动测试设备（ATE）证明其有效性和可实现性。该设计实例是基于高速串行计算机扩展总线标准（PCIe）展开,在传统DFT流程上结合FPGA架构特性演化出的一种新的可编程高效可测性设计。     

基于核的信息安全处理芯片可测性设计

从可测性设计角度讨论了信息安全处理芯片的芯片级测试控制器的设计以及相应核的可测性设计.综合结果显示,所设计的芯片级测试控制器所占用的面积代价非常小.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.