共查询到20条相似文献,搜索用时 31 毫秒
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《Electron Device Letters, IEEE》2008,29(9):1027-1029
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Ghandi R. Hyung-Seok Lee Domeij M. Buono B. Zetterling C.-M. Ostling M. 《Electron Device Letters, IEEE》2008,29(10):1135-1137
High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 mOmegaldrcm2) and high common-emitter current gain of 50 have been fabricated. A graded-base doping was implemented to provide a low-resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high-temperature dopant activation annealing and for avoiding generation of lifetime-killing defects that reduce the current gain. 相似文献
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High temperature SiC trench gate p-IGBTs 总被引:3,自引:0,他引:3
Singh R. Sei-Hyung Ryu Capell D.C. Palmour J.W. 《Electron Devices, IEEE Transactions on》2003,50(3):774-784
Various design issues pertaining to SiC-based IGBTs are described. A trench gate, p-channel IGBT was considered the most appropriate structure for fabrication in SiC. The fabrication and characterization of high temperature SiC IGBTs with high current levels are presented. Using optimized emitter processing, 6H-SiC p-IGBTs show a higher current capability than 4H-SiC p-IGBTs because of their lower emitter contact resistance and higher MOS channel mobility. Since IGBTs rely on minority carrier injection, the low bulk mobility parallel to the c-axis in 6H-SiC was not found to severely affect the current carrying capability as compared with 4H-SiC IGBTs in the present design. Measured results of these devices are described from room temperature to the 350-400/spl deg/C temperature range. For both polytypes, the current capability was found to be much larger when their MOS gates were fabricated in the 112~0 crystal direction compared with the 1100 crystal direction. The emitter (p-type) contact anneal was also found to significantly affect the performance of SiC IGBTs. 4H-SiC IGBTs showed a -85 V blocking capability (room temperature) and on-current of 100 mA at 350/spl deg/C. 6H-SiC IGBTs were demonstrated with -400 V blocking capability (at 25/spl deg/C) and 2 A at 400/spl deg/C. 相似文献
4.
Owing to the conductivity modulation of silicon carbide (SiC) bipolar devices,n-channel insulated gate bipolar transistors (n-IGBTs) have a significant advantage over metal oxide semiconductor field effect transistors (MOSFETs) in ultra high voltage (UHV) applications.In this paper,backside grinding and laser annealing process were carried out to fabricate 4H-SiC n-IGBTs.The thickness of a drift layer was 120 μm,which was designed for a blocking voltage of 13 kV.The n-IGBTs carried a collector current density of 24 A/cm2 at a power dissipation of 300 W/cm2 when the gate voltage was 20 V,with a differential specific on-resistance of 140 mΩ·cm2. 相似文献
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Characterization, Modeling, and Application of 10-kV SiC MOSFET 总被引:4,自引:0,他引:4
《Electron Devices, IEEE Transactions on》2008,55(8):1798-1806
8.
Operation of high-voltage 4H-SiC vertical-JFET in radiation hard environment was investigated by simulation and experiment. Commercial 1700 V normally-OFF SiC JFETs in TO-247 package were irradiated with fast neutrons to fluences of 4.0 × 1014 cm− 2 (1 MeV Si equivalent) and the effect of radiation on their characteristics was then thoroughly analyzed. Four degradation mechanisms were identified, of which the most important is the increase of JFETs ON-state resistance due to the mobility degradation and removal of carriers from transistor's light doped channel and drift regions. As a result, the JFET ON-state losses grow and, at fluences higher than 4 × 1014 cm− 2, the low doped n-regions are fully compensated and transistor loses its functionality. On the contrary, irradiation slightly improves JFET's switching characteristics. The effect of neutron irradiation on operation of SiC V-JFET in a real application was then investigated on the step-UP 15 V/60 V DC-DC converter where the SiC JFET was used as an active switch. Converter characteristics were analyzed by means of the mixed-mode simulation using the developed 2D model of the neutron irradiated transistor. Results showed that the duty cycle of the PWM regulator is growing due to the increase in the voltage drop on the switching JFET. This effect, which is caused by the abovementioned increase the JFET's ON-state resistance, increases power dissipation and deteriorates converter efficiency. Finally, the effect of neutron irradiation on operation SiC V-JFET in the 850 V/24 V auxiliary flyback switching mode power supply was analyzed. We showed that the growth of the ON-state resistance increases transistor's conduction losses and decreases converter efficiency. Exceeding the fluence of 3.3 × 1014 cm− 2 neutrons then causes JFET overheating and subsequent destruction. 相似文献
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《Electron Devices, IEEE Transactions on》2008,55(8):1920-1927
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Fujii K. Koellensperger P. De Doncker R.W. 《Power Electronics, IEEE Transactions on》2008,23(1):172-179
The market of converters connected to transmission lines continues to require insulated gate bipolar transistors (IGBTs) with higher blocking voltages to reduce the number of IGBTs connected in series in high-voltage converters. To cope with these demands, semiconductor manufactures have developed several technologies. Nowadays, IGBTs up to 6.5-kV blocking voltage and IEGTs up to 4.5-kV blocking voltage are on the market. However, these IGBTs and injection-enhanced gate transistors (IEGTs) still have very high switching losses compared to low-voltage devices, leading to a realistic switching frequency of up to 1 kHz. To reduce switching losses in high-power applications, the auxiliary resonant commutated pole inverter (ARCPI) is a possible alternative. In this paper, switching losses and on-state voltages of NPT-IGBT (3.3 kV-1200 A), FS-IGBT (6.5 kV-600 A), SPT-IGBT (2.5 kV-1200 A, 3.3 kV-1200 A and 6.5 kV-600 A) and IEGT (3.3 kV-1200 A) are measured under hard-switching and zero-voltage switching (ZVS) conditions. The aim of this selection is to evaluate the impact of ZVS on various devices of the same voltage ranges. In addition, the difference in ZVS effects among the devices with various blocking voltage levels is evaluated. 相似文献
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基于小电流下肖特基结正向压降的温度特性,建立了温升测量系统。利用该系统对肖特基SiC二极管的瞬态温升进行了测量,结果显示瞬态温升曲线呈阶梯状变化。利用结构函数的方法对瞬态温升曲线进行处理,分析了肖特基SiC二极管在热流传输路径上的热阻构成。研究了三引脚封装的肖特基SiC二极管在相同大功率的条件下,两正极引脚单独使用和并联使用时的热阻特性,结果显示,在两正极引脚并联使用时,其热阻比单独作用时减少一半,这表明三引脚封装的肖特基SiC二极管的两个正极是并联的,并共用一个负极和散热片。 相似文献
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Silicon carbide high-power devices 总被引:2,自引:0,他引:2
Weitzel C.E. Palmour J.W. Carter C.H. Jr. Moore K. Nordquist K.K. Allen S. Thero C. Bhatnagar M. 《Electron Devices, IEEE Transactions on》1996,43(10):1732-1741
In recent years, silicon carbide has received increased attention because of its potential for high-power devices. The unique material properties of SiC, high electric breakdown field, high saturated electron drift velocity, and high thermal conductivity are what give this material its tremendous potential in the power device arena. 4H-SiC Schottky barrier diodes (1400 V) with forward current densities over 700 A/cm2 at 2 V have been demonstrated. Packaged SITs have produced 57 W of output power at 500 MHz, SiC UMOSFETs (1200 V) are projected to have 15 times the current density of Si IGBTs (1200 V). Submicron gate length 4H-SiC MESFETs have achieved fmax=32 GHz, fT=14.0 GHz, and power density=2.8 W/mm @ 1.8 GHz. The performances of a wide variety of SiC devices are compared to that of similar Si and GaAs devices and to theoretically expected results 相似文献
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Modeling buffer layer IGBTs for circuit simulation 总被引:5,自引:0,他引:5
The dynamic behavior of commercially available buffer layer IGBTs is described. It is shown that buffer layer IGBTs become much faster at high voltages than nonbuffer layer IGBTs with similar low voltage characteristics. Because the fall times specified in manufacturers' data sheets do not reflect the voltage dependence of switching speed, a new method of selecting devices for different circuit applications is suggested. A buffer layer IGBT model is developed and implemented into the Saber circuit simulator, and a procedure is developed to extract the model parameters for buffer layer IGBTs. It is shown that the new buffer layer IGBT model can be used to describe the dynamic behavior and power dissipation of buffer layer IGBTs in user-defined application circuits. The results of the buffer layer IGBT model are verified using commercially available IGBTs 相似文献
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《Electron Devices, IEEE Transactions on》2008,55(8):1880-1886
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Hagino H. Yamashita J. Uenishi A. Haruguchi H. 《Electron Devices, IEEE Transactions on》1996,43(3):490-500
Thermal and electrical destructions of n-ch 600 V punchthrough type IGBTs in F.B.SOA are investigated by experiments and simulations, The cause of the thermal destruction is the thermal disappearance of built-in potential of p-n junction between the n+ emitter and the p base of the IGBT integral DMOSFET occurring at the critical temperature of ~650 K. Experiment and simulation results for the critical temperature show a good agreement. The cause of the electrical destruction is impact ionization at the n- drift/n+ buffer junction in addition to the n- drift/p base junctions. That triggers a positive feedback mechanism of increasing IGBT integral pnp transistor current which causes the device to lose gate controllability. The experimentally obtained critical power dissipation is ~2000 kW/cm2. This value is ten times greater than BJTs. It was also found that emitter ballast resistance (EBR) plays an important role in describing the F.B.SOA of IGBTs 相似文献
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由于硅材料本身的限制,传统硅电力电子器件性能已经接近其极限,碳化硅(SiC)器件的高功率、高效率、耐高温、抗辐照等优势逐渐突显,成为电力电子器件一个新的发展方向.综述了SiC材料、SiC电力电子器件、SiC模块及关键工艺的研究现状,重点从材料、器件结构、制备工艺等方面阐述了SiC二极管、金属氧化物半导体场效应晶体管(MOSFET)、结晶型场效应晶体管(JFET)、双极结型晶体管(BJT)、绝缘栅双极晶体管(IGBT)及模块的研究进展.概述了SiC材料、SiC电力电子器件及模块的商品化情况,最后对SiC材料及器件的发展趋势进行了展望. 相似文献
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《Electron Devices, IEEE Transactions on》2008,55(8):1871-1874
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Khan N. Seung Wook Yoon Viswanath A.G.K. Ganesh V.P. Nagarajan R. Witarsa D. Lim S. Vaidyanathan K. 《Advanced Packaging, IEEE Transactions on》2008,31(1):44-50
Stacking of many functional chips in a 3-D stack package leads to high heat dissipation. Therefore, a new platform technology is required to assemble chips vertically and remove the heat effectively. A 3-D stacked package with silicon interposers was developed to integrate one ASIC and two memory chips in a package. Electrical connections in the silicon interposer were formed by through silicon via. Silicon interposer has much high thermal conductivity than organic interposer, therefore the package thermal resistance is lower. Thermal performances of the 3-D package were analyzed and thermal enhancements like thermal via, thermal bridging were evaluated. The designed package showed 5 times lesser thermal resistance compared to a similar package with organic substrate. An additional silicon heat spreader was designed and attached to the package for high power application. Thermal analysis was performed to optimize package thermal performances and experimental validation was carried out. The designed 3-D stack package is suitable for 20 W application. 相似文献
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Suitability and optimization of high-voltage IGBTs for series connection with active voltage clamping 总被引:1,自引:0,他引:1
The successful series combination of 5.2-kV high-voltage integrated gate bipolar transistors (HV IGBTs) is reported in this paper. The tail current cut-off encountered in punchthrough type HV IGBTs can represent a particularly severe handicap for the full control of the inductive voltage overshoot when connecting two devices in series. Advanced voltage clamping techniques are demonstrated, which can also limit the second voltage spike originating from the tail current cut off. It is shown in this paper, that IGBTs with a carrier lifetime profile localized at the anode side are particularly well suited for this application; the shorter the tail current interval, the lower the turn-off losses can be kept. The discussion focuses on the optimum on-state plasma distribution in punchthrough-type HV IGBTs with respect to series connection of these devices. The most recent trends in the development of HV IGBTs seem to be in line with the conclusions drawn in the discussion. Advanced future HV IGBT concepts may substantially ease the difficulties encountered in the series connection of first generation HV IGBTs as used experimentally in this paper. 相似文献