Some optical properties of Se-Ge-As amorphous chalcogenide glasses

The effects of composition, film thickness, substrate temperature, and annealing of amorphous thin films of Se₇₅Ge_25−x As _x (5⩽x⩽20) on their optical properties have been investigated. X-ray diffraction revealed the formation of amorphous films. The absorbance and transmission of vacuum-evaporated thin films were used to determine the band gap and refractive index. Optical absorption measurements showed that the fundamental absorption edge is a function of glass composition and the optical absorption is due to indirect transition. The energy gap increases linearly with increasing arsenic content. The optical band gap,E _opt, was found to be almost thickness independent. The shapes of the absorption edge of annealed samples displayed roughly the same characteristic as those of the unannealed films, but were shifted towards shorter wavelengths; as a result,E _opt increased andE _e, the width of the band tails, decreases. The increase inE _opt is believed to be associated with void removal and microstructural re-arrangement during annealing. The influence of substrate temperature on the optical parameters is discussed.     

Film-thickness effects on the optical and electrical properties of Cu-GeO2 thin cermet films

The effect of film thickness on the optical and electrical properties of Cu-30 wt % GeO₂-70 wt % thin cermet films prepared by electron-beam deposition at about 10^–3 Pa and at a substrate temperature of 300 K is reported. The ultraviolet, visible and direct current (d.c.) conductivity results are analysed with the aim of determining the optical band gap,E _opt, the width of the band tails,E _e, and the d.c. thermal activation energy,E _a. It was found that the optical energy gap increases with increasing thickness and that the absorption was due to indirect transitions ink-space. The general feature of the absorption edge remains similar for both unannealed and annealed films, but annealing has the effect of decreasingE _opt. The d.c. conductivity results show thatE _a decreases with increasing thickness. From a knowledge ofE _opt andE _a, a probable model of the electronic band structure in Cu-GeO₂ thin films has been suggested.     

A study of the optical properties of amorphous thin films of germanium and silicon monoxide

Amorphous films of Ge-SiO have been co-evaporated and some of their optical properties are reported. The optical constants have been measured and estimated. At the high absorption end of the absorption edge, an equation due to non-direct transitions inK-space is found to match the optical absorption data. The variation of the optical band gapE _opt with film composition is reported. The infrared spectrum of a mixed layer is presented and a simple conclusion is drawn.     

Thermal and optical properties of zinc halotellurite glasses

Zinc halotellurite glasses were studied with respect to the glass transition, softening temperature, thermal expansion, optical energy gap, Urbach energy, density, molar volume, refractive index, polarizability, molar refraction and third order non-linear optical susceptibility. Thermal characteristic were determined using a dilatometry. The optical absorption in the wavelength range (300–3200 nm) was measured. From the absorption edge studies, the values of optical band gap (E _opt) and Urbach energy (ΔE) have been evaluated. Optical parameters viz., color dispersion, dispersion energy, E _d, average oscillator energy, E ₀, and third order non-linear optical susceptibility values are estimated from measuring the refractive index at different wavelength. Results obtained are discussed in terms of the glass structure.     

Preparation,and structural,optical and electrical properties of the CdTe1−xSx system

Thin films of the CdTe_1–xS_x system (00.4S_0.6 system showed a maximum optical absorption. It is observed that the optical gap, E_opt, is indirect for (0opt with x in the CdTe_1–xS_x system is not linear and the minimum value of E_opt, was for x=0.3. The addition of copper dopants up to 3% to the CdTe_0.4S_0.6 system reduced the value of E_opt. The electrical conductivity showed two values of activation energy indicating different dominant conduction mechanisms in different temperature ranges.     

The effects of the incorporation of lutetium oxide on the density and optical properties of copper phosphate glasses

A range of phosphate glasses containing lutetium was prepared by the melt quenching technique. The densities of annealed and unannealed glass samples, molar volumes and the optical energy gapE _opt of thin blown films of the glasses were determined. It was found that the density and molar volume both increased with increase of Lu₂O₃ content. TheE _opt values showed that they are not sensitive to the incorporation of small amounts of oxides.     

4.6 Some optical properties of thin Cd3As2 films

The transmission of vacuum deposited Cd₃As₂ films has been measured in the spectral range 0.6–15 ωm. The absorption coefficient α has been calculated from the data for crystalline films obtained at substrate temperature T_s = 440 K and also for amorphous films obtained on substrates at T_s = 300?393 K. The position of the low-energy absorption edge in the spectral range 0.1–0.3 eV is discussed and the value Δ_g^opt = 0.06 eV for indirect transion Γ → Γ₁₅ is obtained for crystalline films. For amorphous films, a shift of the minimum absorption edge to $\text{Δ}\text{E}{}_{\mathrm{g}}{}^{\mathrm{opt}}\text{? 0.4?0.5}\text{eV}$ was observed. For higher energies two direct transitions have been established: the first at E₁ = 0.9 eV in the photon energy range 0.9–1.2 eV.and the second at E₂ = 1.2?1.3 eV in the photon energy range 1.3?1.6 eV. The last value is in good agreement with the value calculated by Lin Chung and with reflectivity data; it corresponds to the transition Γ₁₅ → X₁ in the hypothetical band model of Lin Chung. Differences in the reflective index values for crystalline and amorphous Cd₃ As₂ are also discussed.     

Study of hydrogenated nanoamorphous silicon(na-Si:H) thin film prepared by RF magnetron sputtering for graded optical band gap (<Emphasis Type="Italic">E</Emphasis><Superscript>opt</Superscript><Subscript>g</Subscript>)

The schematic of the energy band gap figure of the graded optical band gap (E_g^opt) in p-i-n layer in na-Si:H solar cells was given in the paper. The intrinsic hydrogenated nanoamorphous silicon(na-Si:H) thin films with the graded band gap as a function of depth through the films were prepared by varying the processing power, gas pressure, gas composition, and etc., We have carried out a investigation of the relationships between the E_g^opt with the crystallization ratio (Xc) and the E_g^opt with the nanocrystalline grain size (D) in na-Si:H thin films grown by PECVD on glass substrates through XRD, Raman scattering, transmission. The E_g^opt increase with the decreases of the crystallization ratio (Xc) and the nanocrystalline grain size (D). The hydrogen dilution ratio is found to increase basically both the crystallization ratio (Xc) and the nanocrystalline grain size (D). Two relationships in na-Si:H are discussed by the etching effect of atomic hydrogen in the framework of the growth mechanism and the quantum size effect (QSE).     

Effect of structural defects on optical properties of amorphous selenium films

Thickness of film, energy of incident photons and glass transition temperature all affect the structural bonding between neighbours and are considered to be the main factors in studying the optical properties of amorphous selenium films. The results indicate that in the lowtemperature range (T <T _g), a shift in the absorption edge to lower photon energies with increasing film thickness occurs. Increasing the thickness is accompanied by a decrease in the optical energy gap,E _g ^opt , with a gradient of 5×10^–4eV nm^–1. In the high-temperature range (T >T _g), the value ofE _g ^opt for a given thickness decreases by more than 50% due to pronounced modulation of the structural defects under incidence of isoenergetic photons of 1.8 eV. The isothermal curves ofT,R=f(t), atT >T _g, take place via three time-dependent stages. These results are interpreted and are correlated with the temperature dependence of the morphological changes declaring the formation of spherulites having a lamellar structure. The kinetic parameters controlling the structural transition are computed and the results are discussed.     

Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

Carbon nitride (CN _x ) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C₂H₄N₄) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5–3.5 eV was observed on the CN _x films. The band gaps (E _opt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1–1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and E _opt. The electrical resistivities of the films on Si wafers are in the 10⁹–10¹⁰ · cm range.     

Semiconducting glasses of the GeBiS system

The glass forming region of the Ge-Bi-S system was determined. Electrical conductivity, glass-transition temperature, the values of the electrical, E^e_g, and optical, E^opt_g, gaps of several glassy samples of the Ge-Bi-S system were determined. The absorption edge in the short-wavelength region complies with the Urbach rule and it is discussed in terms of the Dow and Redfield theory. The glasses are transparent in the infrared spectral region from 900 to 5000 cm^?1.     

Optical constants of thermally evaporated amorphous GeSe3 thin films

The optical transmission spectra of amorphous Ge-Se films of chemical composition GeSe₃, prepared by thermal evaporation, are measured overthe 300 nm to 2500 nm spectral region. A simple, straightforward procedure suggested by Swanepoel, which is based on the use of interference fringes, has been applied in order to derive the real and imaginary parts of the complex refractive index, and also the film thickness. Furthermore, thickness measurements made by a surface-profiling stylus are also carried out to cross-check the results obtained by the present optical method, employing only T(). The dispersion of n is discussed in terms of the single-oscillator Wemple and DiDomenico model, and the optical band gap E _g ^opt has been determined from the absorption coefficient values, using the Tauc procedure.     

Annealing dependence of optical properties of Ga20S75Sb5 and Ga20S40Sb40 thin films

Amorphous Ga₂₀S₇₅Sb₅ and Ga₂₀S₄₀Sb₄₀ thin films were prepared onto glass substrates by using thermal evaporation method. The effect of annealing (under vacuum) at different temperatures on the optical parameters was investigated in the temperature range 373-593 K. The optical absorption coefficient (α) for the as-deposited and annealed films were calculated from the reflectance and transmittance measurements in the range 190-900 nm. X-Ray diffraction indicates that the as-deposited films and those annealed up to the glass transition temperature (T_g) exhibit amorphous state. On annealing above the glass transition temperature these films show a polycrystalline structure. Analysis of the optical absorption data indicates that the optical band gap E_g^opt of these films obeys Tauc's relation for the allowed non-direct transition. It was found that the optical band gap E_g^opt increases with annealing temperature up to T_g, whereas above T_g there is a remarkable decrease. The obtained results were interpreted on the basis of amorphous- crystalline transformation.     

Optical absorption and photoconductovity in amorphous indium selenide thin films

Optical absorption coefficient and photoconductivity measurements were performed on amorphous indium selenide thin films produced by vacuum evaporation. The dependence of the absorption coefficient α on the photon energy ħω at the edge of the absorption band is well described by the relation $\text{α}\text{h}\text{̵}\text{ω = B(}\text{h}\text{̵}\text{ω - E}{}_{\mathrm{<mtext>opt</mtext>}}\text{)}{}^2$ where B is a quality factor and E_opt is the optical band gap. The steady state photoconductivity as a function of the temperature and light intensity is tentatively interpreted in terms of a simple kinetic model proposed by Weiser et al.     

Optical and thermal properties of poly(ethylene oxide) doped with MnCl2 salt

The optical and thermal properties of prepared poly(ethylene oxide)/MnCl₂ films were studied as a function of MnCl₂ concentration at room temperature. The observed optical energy gap (E_opt) and energy gap tail (ΔE) were determined from the measured absorption spectra. It was found that the optical energy gap decreases with MnCl₂ concentration, and the absorption coefficient reduces sharply at concentration of 5 wt% MnCl₂ compared with the neat PEO. Differential scanning calorimetry (DSC) measurement shows that the heat of fusion increases with the MnCl₂ concentration, while the melting point decreases. Correlation between the observed optical energy gap and heat of fusion is presented.     

Optical properties and crystallization of glasses in the system Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>–MoO<Subscript>3</Subscript>–B<Subscript>2</Subscript>O<Subscript>3</Subscript>

The purpose of this work is to study the optical properties and crystallization of glasses in the ternary system Bi₂O₃–MoO₃–B₂O₃. In order to verify the obtaining of bismuth borate crystal phases several glass compositions have been selected for crystallization. The obtained samples were characterized by X-ray diffraction, scanning electron microscopy and UV–Vis spectroscopy. The UV–Vis spectroscopy showed that the obtained glasses are transparent in the visible region. The values of optical band gap (E _opt) and changes in cut-off (λ_c) depending on composition are reported. It was established that the increase in the MoO₃ content led to decreasing the transmittance of the glasses. Moreover, the absorption edge shifts towards longer wavelength.     

Effect of Ba(Ti<Subscript>(0.9)</Subscript>Sn<Subscript>0.1</Subscript>)O<Subscript>3</Subscript> ceramic doping on optical,thermal and dielectric properties of polycarbonate host

Ba(Ti_(0.9)Sn_0.1)O₃ (BTS) ceramic was prepared by a conventional ceramic processing. BTS-polycarbonate (PC) composites were prepared at different BTS concentrations by weight in order to study their optical and dielectric properties. The absorption coefficient (α) was determined in the wavelength range from 250–600 nm at room temperature for all BTS-PC composites. The optical gap (E _opt) was also determined for BTS-PC composites. The variation of the absorption coefficient (α) and optical gap (E _opt) with BTS content are reported. It was found that BTS ceramic highly enhances the UV absorption of PC host at 300 nm. The optical gap decreases up to the value of 3.93 eV as BTS content increases up to 35 wt% and this was attributed to the formation of localized states in the forbidden gap. The relative dielectric permittivity, dielectric loss and loss tangent were measured at temperature range from room temperature up to 150°C and at frequency values 1 kHz, 10 kHz and 50 kHz. Addition of BTS to PC host, however, will increase relative dielectric permittivity, dielectric loss and loss tangent. Besides, increasing of temperature will also increase relative dielectric permittivity, dielectric loss and loss tangent especially above the glass transition temperature of PC host and this behaviour was attributed to the segmental motion of polymer chains. On the other hand, this study shows that there is a good agreement between SEM, DSC and dielectric results and also between optical gap and a.c. conductivity results. Moreover, SEM and DSC results reveal that addition of BTS ceramic particles to PC host will reduce the physical bond between polymer chains or may be will increase the free volume in the polymer host and consequently will enhance the segmental motion of polymer chains and this behaviour is independent of ceramic phase.     

Characterization of thermally evaporated AgGaTe<Subscript>2</Subscript> films grown on KCl substrates

Silver gallium telluride (AgGaTe₂) films have been grown by thermal evaporation technique onto the KCl substrates kept at different temperatures (483–563 K) in a vacuum of 1.3 × 10^–3Pa. The experimental conditions were optimised to obtain better crystallinity of the films. The films so prepared have been studied for their structural, optical and electrical properties. Observations reveal that the crystallinity of the films increases with increase in substrate temperature. Average crystallite size of 0.2–0.5 m has been observed in case of films deposited at 563 K. Analysis of optical spectra of the films in the range 300–1100 nm show an allowed direct transition near the fundamental absorption edge (E_g1) in addition to a transition originating from crystal field split levels (E_g2). It has been observed that the carrier concentration and Hall mobility of films increases with increase in substrate temperature.     

Preparation and investigation on glasses in the Te46As32Ge10Si12 and Te41As37Ge10Si12 systems

Thin films of Te_46–xAs_32+xGe₁₀Si₁₂ (x=0,5) of different thicknesses are deposited on glass substrate by vacuum evaporation. X-ray diffraction revealed the formation of amorphous films. The value of the optical band gap, E _g, is found to increase with the thickness of the films and with increasing As content. The films are heat treated at different elevated temperatures from 298 to 423 K. The values of E _g are found to decrease with increasing temperature of heat treatment. The band tail, E _e, obey Urbach's empirical relation.     

Electrical conductivity and optical properties of gamma-irradiated niobium phosphate glasses

A detailed study of the d. c. electrical conductivity and the optical absorption spectra as a function of gamma-irradiation doses for prepared (20 mole% Nb₂O₅ –80 mole% P₂O₅) glass system is presented. The temperature dependence on the d. c. electrical conductivity measurements is studied over the temperature range from room temperature to 573 K. The induced changes in the d. c. electrical conductivity caused by different doses of gamma irradiation (0–16 Mrad) were studied. The electrical conductivity, , and the activation energy, E, values were found to be sensitive to the gamma-ray doses. The optical absorption spectra were measured in the wavelength range from 200 to 1100 nm at different -doses, in the range from 0 to 28 Mrad. The obtained results are analysed assuming optical absorption by indirect transition. Values of the absorption coefficient, , the optical energy gap, E _opt, and the width of the band tail, E, are found to be -irradiation dose dependent.