一种应用于阵列TDC的低抖动锁相环设计

传统的PLL（Phase Locked Loop）电路受限于环路参数的选定,其相位噪声与抖动特性已经难以满足大阵列、高精度TDC（Time-to-Digital Converter）的应用需求.本文致力于PLL环路带宽的优化选取,采取TSMC 0.35μm CMOS工艺实现了一款应用于TDC的具有低抖动、低噪声特性的锁相环（Phase Locked Loop,PLL）电路,芯片面积约为0.745mm×0.368mm.实际测试结果表明,在外部信号源输入15.625MHz时钟信号的条件下,PLL输出频率可锁定在250.0007MHz,频率偏差为0.7kHz,输出时钟占空比为51.59%,相位噪声为114.66dBc/Hz@1MHz,均方根抖动为4.3ps,峰峰值抖动为32.2ps.锁相环的相位噪声显著降低,输出时钟的抖动特性明显优化,可满足高精度阵列TDC的应用需要.     

A low jitter, low spur multiphase phase-locked loop for an IR-UWB receiver

A low jitter,low spur multiphase phase-locked loop(PLL) for an impulse radio ultra-wideband(IR-UWB) receiver is presented.The PLL is based on a ring oscillator in order to simultaneously meet the jitter requirement, low power consumption and multiphase clock output.In this design,a noise and matching improved voltage-controlled oscillator(VCO) is devised to enhance the timing accuracy and phase noise performance of multiphase clocks.By good matching achieved in the charge pump and careful choice of the l...     

用于高能物理实验电子读出芯片的低噪声锁相环芯片设计

基于TSMC 180 nm工艺设计并流片测试了一款用于高能物理实验的电子读出系统的低噪声、低功耗锁相环芯片。该芯片主要由鉴频鉴相器、电荷泵、环路滤波器、压控振荡器和分频器等子模块组成,在锁相环电荷泵模块中,使用共源共栅电流镜结构精准镜像电流以减小电流失配和用运放钳位电压进一步减小相位噪声。测试结果表明,该锁相环芯片在1.8 V电源电压、输入50 MHz参考时钟条件下,可稳定输出200 MHz的差分时钟信号,时钟均方根抖动为2.26 ps(0.45 mUI),相位噪声在1 MHz频偏处为-105.83 dBc/Hz。芯片整体功耗实测为23.4 mW,锁相环核心功耗为2.02 mW。     

A low spur, low jitter 10-GHz phase-locked loop in 0.13-μm CMOS technology

This paper presents a 10-GHz low spur and low jitter phase-locked loop (PLL).An improved low phase noise VCO and a dynamic phase frequency detector with a short delay reset time are employed to reduce the noise of the PLL.We also discuss the methodology to optimize the high frequency prescaler's noise and the charge pump's current mismatch.The chip was fabricated in a SMIC 0.13-μm RF CMOS process with a 1.2-V power supply.The measured integrated RMS jitter is 757 fs (1 kHz to 10 MHz); the phase noise is -89 and-118.1 dBc/Hz at 10 kHz and 1 MHz frequency offset,respectively; and the reference frequency spur is below -77 dBc.The chip size is 0.32 mm2 and the power consumption is 30.6 mW.     

一种宽带低相噪频率合成器的设计方法研究

提出了一种宽带低相噪频率合成器的设计方法.采用了数字锁相技术,该锁相技术主要由锁相环（phase locked loop,PLL）芯片、有源环路滤波器、宽带压控振荡器和外置宽带分频器等构成,实现了10~20 GHz范围内任意频率输出,具有输出频率宽、相位噪声低、集成度高、功耗低和成本低等优点.最后对该PLL电路杂散抑制和相位噪声的指标进行了测试,测试结果表明该PLL输出10 GHz时相位噪声优于-109 dBc/Hz@1 kHz,该指标与直接式频率合成器实现的指标相当.     

A 0.8 V low power low phase-noise PLL

A low power and low phase noise phase-locked loop(PLL) design for low voltage(0.8 V) applications is presented.The voltage controlled oscillator(VCO) operates from a 0.5 V voltage supply,while the other blocks operate from a 0.8 V supply.A differential NMOS-only topology is adopted for the oscillator,a modified precharge topology is applied in the phase-frequency detector(PFD),and a new feedback structure is utilized in the charge pump(CP) for ultra-low voltage applications.The divider adopts the extende...     

A Quantization Noise Pushing Technique for $DeltaSigma$ Fractional- $N$ Frequency Synthesizers

This paper demonstrates our proposed quantization noise pushing technique, which moves the quantization noise to higher frequencies and utilizes the low-pass characteristic of the phased-lock loop (PLL) to further suppress the quantization noise. In addition, it can separate the operating frequency of the DeltaSigma modulator and the comparison frequency of the phase/frequency detector (PFD) so as to reduce the loop gain of the PLL and lower the in-band phase noise. This synthesizer was fabricated using the UMC 0.18-mum CMOS process. The chip area measures 0.85 mm². The supply voltage is 2 V, corresponding to a total power consumption of 26.8 mW. The experimental results show that, with this technique, the in-band phase noise can be lowered by 12 dB, while the out-of-band phase noise can be reduced by more than 15 dB, compared to a synthesizer with the same PFD comparison frequency.     

一种C波段小步进捷变频频率综合器的设计

本文介绍了一种小步进、低相噪、低杂散、捷变频锁相频率综合器的设计与实现,本设计选用超低相噪锁相环芯片,采用小数分频实现小步进,通过双锁相环“乒乓”工作实现捷变频,经过对环路参数的精心设计,较好的实现了相位噪声、杂散等技术指标。     

Cell-based fully integrated CMOS frequency synthesizers

A family of standard cells for phase-locked loop (PLL) applications is presented. The applications are processed using a 1.5 μm, n-well, double-polysilicon, double-layer metal CMOS process. Applications include frequency synthesis for computer clock generation, disk drives, and pixel clock generators for computer monitors, with maximum frequencies up to 80 MHz. The synthesizers require no external components since the loop filter and oscillator are on chip with the phase frequency detector and the charge pump. Special voltage and current reference cells are discussed. Analysis of noise sources in the PLL demonstrates the need for reducing the phase noise of the system. A low phase noise is achieved through supply rejection techniques and by placing the oscillator in a high-gain feedback loop to minimize its noise contributions. Laboratory measurements of completed silicon show synthesizers with exceptionally linear gain, as well as transient responses and phase noise similar to predicted results     

C波段小型化低相噪全相参频率综合器

提出了一种小型低相噪、低杂散的C波段全相参频率综合器设计方案。基带信号由DDS芯片产生,通过对环路滤波器和电路印制板的优化设计改善相噪和杂散性能,并与PLL输出的C波段点频信号进行上变频,得到所需信号。介绍了实现原理、相位噪声模型及设计方法。测试结果表明,在7.8GHz处,频综相位噪声≤-103dBc/Hz@100kHz,杂波抑制≤-61dBc。     

宽带低相噪频率综合器设计与实现

为满足某雷达信号设计要求,文中基于国产小数锁相环芯片GM4704产生7.12～9.12 GHz的信号,采用传统的PLL方式产生,低相位噪声、低杂散的频率综合器。同时,给出了设计过程并对相关的设计参数进行分析,应用相关的PLL仿真软件对环路滤波器进行仿真设计,通过实际电路测试,相位噪声达到-97 dBc/Hz@1 kHz与理论计算较接近,杂散达到-70 dB。     

A low phase noise and low power 3–5 GHz frequency synthesizer in 0.18 µm CMOS technology

A low power frequency synthesizer for WLAN applications is proposed in this paper. The NMOS transistor-feedback voltage controlled oscillator (VCO) is designed for the purpose of decreasing phase noise. TSPC frequency divider is designed for widening the frequency range with keeping low the power consumption. The phase frequency detector (PFD) with XOR delay cell is designed to have the low blind and dead zone, also for neutralizing the charge pump (CP) output currents; the high gain operational amplifier and miller capacitors are applied to the circuit. The frequency synthesizer is simulated in 0.18 µm CMOS technology while it works at 1.8 V supply voltage. The VCO has a phase noise of −136 dBc/Hz at 1 MHz offset. It has 10.2% tuning range. With existence of a frequency divider in the frequency synthesizer loop the output frequency of the VCO can be divided into the maximum ratio of 18. It is considered that the power consumption of the frequency synthesizer is 4 mW and the chip area is 10,400 µm².     

串行数字锁相频率合成器的设计

介绍了一种利用AT89S52单片机控制数字锁相环LMX2316的低相位噪声频率合成器,分析了环路的带内相位噪声以及环路的锁定时间与环路带宽的关系,讨论了环路滤波器的设计,最后得到了与分析相符合的结果。     

A 1.8-V operation RF CMOS transceiver for 2.4-GHz-band GFSK applications

This paper describes a single-chip RF transceiver LSI for 2.4-GHz-band Gaussian frequency shift-keying applications, such as Bluetooth. This chip uses a 0.18-/spl mu/m bulk CMOS process for lower current consumption. The LSI consists of almost all the required RF and IF building blocks: a transmit/receive antenna switch, a power amplifier, a low noise amplifier, an image rejection mixer, channel-selection filters, a limiter, a received signal strength indicator, a frequency discriminator, a voltage controlled oscillator, and a phase-locked loop synthesizer. The bandpass filter for channel selection was difficult to achieve since it operates at a low supply voltage. However, because large interference is roughly rejected at the output of the image rejection mixer and a wide-input-range bandpass filter with an optimized input bias is realized, the transceiver can operate at a supply voltage of 1.8 V. In the IF section, we adopted a circuit design using the minimum number of passive elements, resistors and capacitors, for a lower chip area of 10.2 mm/sup 2/.     

A fully integrated CMOS frequency synthesizer with charge-averagingcharge pump and dual-path loop filter for PCS- and cellular-CDMAwireless systems

A fully integrated CMOS frequency synthesizer for PCS- and cellular-CDMA systems is integrated in a 0.35-μm CMOS technology. The proposed charge-averaging charge pump scheme suppresses fractional spurs to the level of noise, and the improved architecture of the dual-path loop filter makes it possible to implement a large time constant on a chip. With current-feedback bias and coarse tuning, a voltage-controlled oscillator (VCO) enables constant power and low gain of the VCO. Power dissipation is 60 mW with a 3.0-V supply. The proposed frequency synthesizer provides 10-kHz channel spacing with phase noise of -121 dBc/Hz in the PCS band and -127 dBc/Hz in the cellular band, both at 1-MHz offset frequency     

应用于5GHz WLAN的单片CMOS频率综合器

采用中芯国际(SMIC)的0.18μm混合信号与射频1P6MCMOS工艺实现了WLAN802.11a收发机的锁相环型频率综合器,它集成了压控振荡器、双模预分频器、鉴频鉴相器、电荷泵、各种数字计数器、数字寄存器和控制等电路。基于环路的线性模型,对环路参数的优化设计及环路性能进行了深入的讨论。流片后测试结果表明,该频率综合器的锁定范围为4096～4288MHz,在振荡频率为4.154GHz时,偏离中心频率1MHz处的相位噪声可以达到-117dBc/Hz,输出功率约为-3dBm。芯片面积为0.675mm×0.700mm。采用1.8V的电源供电,核心电路功耗约为24mW。     

A low phase noise PLL using Vackar VCO and a wide-locking range tunable divider for V-band signal generation in 65-nm CMOS

This paper presents a low phase noise integer-N phase-locked loop (PLL) for V-band signal generation. To enhance the frequency stability, we use a new class of Vackar voltage-controlled oscillator (VCO) in the PLL. The Vackar VCO achieves a low phase noise performance by effectively suppressing the AM-PM conversion. To properly align the locking range with the output of the VCO, a divider with wide locking range is realized by the current-mode logic (CML) D-flip-flops with tunable load. For spur reduction, an enhanced charge-pump structure is used to reject transient current glitches. With good static and dynamic current matching achieved in the charge pump, the reference spur is suppressed down to ?50 dBc. The designed PLL is implemented in a 65 nm RFCMOS process, and the measurement demonstrates a low phase noise signal up to 17 GHz. The in-band phase noise (at 1 MHz offset) and out-band phase noise (at 50 MHz offset) are ?103.6 and ?126.8 dBc/Hz, respectively. The PLL consumes 50.7 mW and occupies a chip area of 0.9 mm².     

A 2.4-GHz monolithic fractional-N frequency synthesizer with robust phase-switching prescaler and loop capacitance multiplier

The design of a 2.4-GHz fully integrated /spl Sigma//spl Delta/ fractional-N frequency synthesizer in a 0.35-/spl mu/m CMOS process is presented. The design focuses on the prescaler and the loop filter, which are often the speed and the integration bottlenecks of the phase-locked loop (PLL), respectively. A 1.5-V 3-mW inherently glitch-free phase-switching prescaler is proposed. It is based on eight lower frequency 45/spl deg/-spaced phases and a reversed phase-switching sequence. The large integrating capacitor in the loop filter was integrated on chip via a simple capacitance multiplier that saves silicon area, consumes only 0.2 mW, and introduces negligible noise. The synthesizer has a 9.4% frequency tuning range from 2.23 to 2.45 GHz. It dissipates 16 mW and takes an active area of 0.35 mm/sup 2/ excluding the 0.5-mm/sup 2/ digital /spl Sigma//spl Delta/ modulator.     

Performance analysis of an all-digital BPSK direct-sequencespread-spectrum IF receiver architecture

A VLSI architecture for an all-digital binary phase shift keying (BPSK) direct-sequence (DS) spread spectrum (SS) intermediate frequency (IF) receiver is presented, and an in-depth performance analysis is given. The all-digital architecture incorporates a Costas loop for carrier recovery and a delay-locked loop for clock recovery. For the pseudorandom noise (PN) acquisition block, a robust energy detection scheme is proposed to reduce false PN locks over a broad range of signal-to-noise ratios. The proposed architecture is intended for use in the 902-928 MHz unlicensed spread spectrum radio band. A 100 kbs information rate and a 12.7 Mchips/second PN code rate are assumed. The IF center frequency is 12.7 MHz and the IF sampling rate is 50.8 Msamples/second, which is the Nyquist rate for the 25.4 MHz bandwidth signal. Finite wordlength effects have been simulated to optimize the architecture, thereby minimizing the chip area, and results of the finite wordlength simulations demonstrate that the chip architecture achieves a bit error rate performance within 1 dB of theory in an additive white Gaussian noise channel     

基于HMC833低相噪低杂散频率源的设计

航天靶场中射频(RF)转发系统对频率源相位噪声的要求很高,因此有必要研究低相噪、低杂散、低功耗、小步进的频率源。为了适应现代航天靶场的要求,选用HMC833LP6GE锁相环芯片进行频率源设计,并用C8051F314单片机对锁相环芯片进行控制,设计出了一款性能优越的频率源。测试结果表明在合理的参数配置条件下,频率源可以满足系统的各项要求。