Modeling phase noise in frequency dividers

A theory for modeling noise in frequency dividers and the measurements to support the theory are presented. The most complete measurements were made on ECL (emitter-coupled logic) dividers for which the primary noise contributions were from additive output noise and sampled additive input noise. Output phase power spectral density due to the latter varies as the square of the input frequency and is inversely proportion to the output frequency. The third most significant contributor was sampled output noise. A summary of available noise data is also given.     

Phase noise performance of analog frequency dividers

The phase noise performance obtainable using silicon and GaAs-based TTL (transistor-transistor logic) and ECL (emitter-coupled logic) logic level digital frequency dividers is discussed. Measurement of the spectral performance of two types of analog dividers is reported: a parametric divider using varactor diodes and a regenerative-type divider incorporating a double-balanced mixer in the oscillator feedback circuit. Both dividers were configured for divide-by-two operation at VHF. Evaluation indicates the regenerative divider is capable of providing much lower phase noise than conventional digital logic level devices. The regenerative divider can be successfully operated over bandwidths in excess of an octave, and the design lends itself to small (i.e. TO-8) modular package implementation. Operating frequencies are bounded only by the range of the mixer and RF amplifier utilized and, as such, should extend from HF through microwave.     

Conjugate regenerative dividers

We discuss a novel design of a self-starting regenerative divider that permits division by 3, 4, 5, 6... instead of the usual 2. This is accomplished by having the loop oscillate simultaneously at two harmonically related conjugate frequencies, e.g., at /spl nu//4 and 3/spl nu//4. A prototype of the divide-by-four circuit has been constructed for an input frequency of 400 MHz. This divider exhibits very low phase noise, l (1 kHz) = -162 dBc/Hz and l (100 kHz) = -170 dBc/Hz, which is approximately 9 dB lower than that of its constituent parts. Simple modifications of the feedback loop of this circuit enabled it to divide by 3, 5, and 8. Operation at higher division ratios appears feasible under certain conditions.     

Evaluating phase noise power spectrum with variable frequency resolution

Measurement of phase noise affecting sinusoidal carriers is dealt with here. A new method is proposed, mainly intended to overcome the limits of two digital signal-processing solutions, already presented by the authors and devoted, respectively, to far-from-the-carrier and close-to-the-carrier phase noise analysis. Thanks to an original measurement procedure, the method optimizes the frequency resolution in the evaluation of phase noise power spectral density; in particular, the closer to the carrier the analysis, the finer the frequency resolution granted. It is possible to obtain accurate and reliable results in a wide range of frequency offsets with no need for heavy computational burden and expensive hardware resources of the adopted data acquisition system. The results of a number of experiments, conducted on actual sinusoidal carriers through a measurement prototype implementing the method, confirm the efficacy and reliability of the proposal.     

AM noise impact on low level phase noise measurements

The influence of the source AM noise in microwave residual phase noise experiments is investigated. The noise floor degradation problem, caused by the parasitic detection of this type of noise by an imperfectly balanced mixer, is solved thanks to a refinement of the quadrature condition. The parasitic noise contribution attributable to the AM to PM (phase modulation) conversion occurring in the device under test is minimized through the development of a dedicated microwave source featuring an AM noise level as low as -170 dBc/Hz at 10 kHz offset from a 3.5 GHz carrier     

HBAR-Based 3.6 GHz oscillator with low power consumption and low phase noise

We have designed and built 2 oscillators at 1.2 and 3.6 GHz based on high-overtone bulk acoustic resonators (HBARs) for application in chip-scale atomic clocks (CSACs). The measured phase noise of the 3.6 GHz oscillator is -67 dBc/Hz at 300 Hz offset and -100 dBc/Hz at 10 kHz offset. The Allan deviation of the free-running oscillator is 1.5 × 10^-9 at one second integration time and the power consumption is 3.2 mW. The low phase noise allows the oscillator to be locked to a CSAC physics package without significantly degrading the clock performance.     

New types of transformer frequency dividers

Conclusions The dividers described above can be made for dividing high voltages (2–3.5 kV) over a wide frequency range (20 Hz–200 kHz). The divider with its variable input resistance provides a convenient and rapid reading of the input voltage for a known output voltage and, owing to this, it can be used in thermoelectric voltage comparators.Translated from Izmeritel'naya Tekhnika, No. 1, pp. 59–61, January, 1972.     

Novel interferometric frequency discriminators for low noise microwave applications

New configurations of interferometric frequency discriminators (FD) for frequency stabilization of microwave oscillators are examined. The new FDs are arranged in single directional (SD) (patented), bidirectional (BD) (patent pending), and dual reflection (DR) (patent pending) configurations. In the SD configuration, the signals reflected off and transmitted through the resonator separately pass through different arms of the interferometer. In the BD configuration, microwaves pass in both directions through each arm of the interferometer. In the DR configuration, microwaves are reflected from the resonator as well as the compensating arm. The FD sensitivity is compared with that for the conventional interferometric FD and found to be 6 dB greater in the BD configuration. Because no circulator is required within the interferometer in either the BD or the DR FD, the discriminator's phase noise floor is not limited by the circulator contribution     

InGaAs红外探测器低频噪声研究

红外探测器的低频噪声是制约器件能否应用于空间遥感的关键因素之一.本文测试了典型的铟镓砷(InGaAs)红外探测器的低频噪声,测试结果表明器件的Hooge系数αH=2×10-5～7×10-5,噪声拐点较大.讨论了暗电流与器件低频噪声的关系,比较了不同钝化工艺研制的器件的低频噪声,结果表明通过加强表面钝化工艺可有效地降低器件的低频噪声.     

Transistorized regenerative frequency divider

Summary Regenerative transistorized frequency dividers have a highly-stable phase characteristic with the supply voltage and ambient temperature varying over wide ranges. The above divider is not inferior in its phase stability to highly stable tube frequency dividers.The use of transistors and miniature components makes it possible to produce economical, reliable and small frequency dividers for quartz clocks. The lower power consumption of transistorized dividers makes it possible to feed them from storage batteries of a relatively small capacity.In transistorized circuits it is advisable to use inductive phase shifters for varying the quartz-clock readings.     

低频噪声声品质评价实验研究

以等响处理后的 75 个稳态低频噪声样本为例, 采用成对比较法, 设计并完成了有 24 位评价者参与的大规模实验室主观评价实验。研究发现: 1)“不愉悦度”能够充分体现人对低频噪声的主观感受, 评价效果理想; 2) 存在决定低频噪声不愉悦感的频率或频带; 响度在决定稳态低频噪声的不愉悦感程度中占主导地位, 尖锐度的影响亦不容忽视; 与总声能相比, 低频段声能比与频谱形状在决定不愉悦程度时, 作用更大一些。     

Process-induced oscillator frequency pulling and phase noise within plasma systems

Passive radio spectroscopy is employed to examine plasma process instabilities generated by the interaction between the power source oscillator and the plasma load. A fixed frequency of 13.56 MHz and a 170-180 kHz Flyback transformer are considered. The carrier frequencies are interrogated using a resolution bandwidth that constitutes ∼1/7000-1/580 of the target oscillator frequencies with a sweep time of less than 0.06 s across the phase noise disturbance. Within these spectrum analyzer measurement parameters, oscillator phase noise (1/f^n=1-3, discrete spurs and raised noise floor) is shown to be linked to plasma load mismatch and periodic instabilities. In the case of the Flyback circuit, it is found that the oscillator frequency pulling and modulation are linked to the plasma reactance. These results indicate that oscillator phase noise can be used as a non-invasive plasma process metrology tool.     

采用SCFL的GaAs双模高速分频器

介绍了三种ＧａＡｓ双模高速分频器的设计,分别讨论了双模分频器的工作原理及三种电路的逻辑设计,以及基于源耦合场效应管逻辑的电路结构,并给出了三种电路的模拟结果。     

Phase noise performance of microwave analog frequency dividers: application to the characterization of oscillators up to the millimeter-wave range

The phase noise performance of two different microwave analog frequency dividers is characterized and compared with the values obtained using simple theories of noise in injection-locked systems. The direct measurement of the divider noise with a low phase noise synthesizer is not accurate enough, and the residual noise technique is used. The noise levels observed using this technique, between -120 and -155 dBc/Hz at a 10 kHz offset frequency, demonstrate that this divider noise is much lower than the phase noise of most microwave free running oscillators, even if this noise is still high with respect to the residual noise of amplifiers realized with the same active devices. The down conversion of microwave sources up to 40 GHz, is proposed as an application example.     

热电厂控制室低频噪声治理实例

根据控制室噪声治理实例的结果,提出控制室噪声控制和治理的原则、方法和设计方向。通过对主要噪声源分布、构成情况和控制室隔声效果的测定结果,采用成熟的噪声治理技术(减振、隔声与吸声综合措施),使低频噪声环境获得有效治理。检测表明,治理后的环境噪声下降了19dB(SPL),在125Hz峰点处下降26dB。在控制生产性噪声上已取得较好效果,改善了职工的工作环境。针对电厂车间内磨煤机是主要噪声源,其平均噪声强度均大于95dBA的问题,应根据车间噪声水平、场地等情况正确运用建筑声学合理设计,才能有效的提高控制室防护水平。     

Extremely low phase noise UHF oscillators utilizing high-overtone, bulk-acoustic resonators

High-overtone, bulk acoustic resonators (HBAR) have been designed that exhibit 9-dB insertion loss and loaded Q values of 80000 at 640 MHz with out-of-phase resonances occurring every 2.5 MHz. These resonators have been used as ovenized frequency-control elements in very low phase noise oscillators. The oscillator sustaining stage circuitry incorporates low-1/f noise modular RF amplifiers, Schottky-diode ALC, and a miniature 2-pole helical filter for suppression of HBAR adjacent resonant responses. Measurement of oscillator output signal flicker-of-frequency noise confirms that state-of-the-art levels of short-term frequency stability have been obtained. Sustaining stage circuit contribution to resulting oscillator flicker-of-frequency noise is 7-10 dB below that due to the resonators themselves. At 16-dBm resonator drive, an oscillator output signal white phase noise floor level of -175 dBc/Hz is achieved.