Diffusion of iron into solar-grade CIGS layers from natural and radioactive front-side sources

Diffusion of Fe in CIGS was investigated on solar-grade CIGS layers using radiotracer sputter-profiling of ⁵⁹Fe or in-depth secondary ion mass spectrometry (SIMS) of natural iron isotopes. In both cases natural or radioactively labelled iron was deposited on the front-surface of CIGS/Mo/float-glass samples. Fe penetration profiles were measured after isothermal annealing in a lamp oven at different temperatures. A diffusivity of 4 × 10^− 13 cm² s^− 1 was deduced from Gaussian-type SIMS profiles originating from annealing at 300 °C. It was found that pronounced sputter-broadening effects may complicate the interpretation of the diffusion profiles.     

Pb(Zr0.52Ti0.48)O3/TiNi multilayered heterostructures on Si substrates for smart systems

Ferroelectric/shape memory alloy thin film multilayered heterostructures possess both sensing and actuating functions and are considered to be smart. In this article, Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films and Ti-riched TiNi shape memory alloy thin films have been deposited on Si and SiO₂/Si substrates in the 400-600 °C temperature range by pulsed laser deposition technique. Deposition processing, microstructure and surface morphology of these films are described. The TiNi films deposited at 500 °C had an austenitic B2 structure with preferred (110) orientation. The surfaces of the films were very smooth with the root-mean-square roughness on a unit cell level. The structure of the TiNi films had a significant influence on that of the subsequently deposited PZT films. The single B2 austenite phase of the TiNi favored the growth of perovskite PZT films. The PZT/TiNi heterostructures with the PZT and TiNi films respectively deposited at 600 and 500 °C exhibited a polarization-electric field hysteresis behavior with a leakage current of about 2 × 10^− 6 A/cm².     

Nickel diffusion in polycrystalline CuInSe2 thin films with a <112> fiber texture

Nickel diffusion in CuInSe₂ thin films was studied in the temperature range 430-520 °C. Thin films of copper indium diselenide (CuInSe₂) were prepared by selenization of CuInSe₂-Cu-In multilayered structure on glass substrate. A thin film of Nickel was deposited and annealed at different temperatures. Surface morphologies of the Ni diffused and undiffused CuInSe2 films were investigated using scanning electron microscope. The alteration of Nickel concentration in the CuInSe₂ thin film was measured by Energy Dispersive X-Ray Fluorescence (EDXRF) technique. These measurements were fitted to a complementary error function solution and the diffusion coefficients at four different temperatures were evaluated. The diffusion coefficients of Ni in CuInSe₂ films were estimated from concentration profiles at temperatures 430-520 °C as D = 1.86 × 10^− 7(cm²s^− 1)exp[− 0.68(eV)/kT].     

Insight into excimer laser crystallization exploiting ellipsometry: Effect of silicon film precursor

The optical diagnostic of spectroscopic ellipsometry is shown to be an effective tool to investigate the mechanism of excimer laser crystallization (ELC) of silicon thin films. A detailed spectroscopic ellipsometric investigation of the microstructures of polycrystalline Si films obtained on SiO₂/Si wafers by ELC of a-Si:H and nc-Si films deposited, respectively, by SiH₄ plasma enhanced chemical vapor deposition (PECVD) and SiF₄-PECVD is presented. It is shown that ellipsometric spectra of the pseudodielectric function of polysilicon thin films allows to discern the three different ELC regimes of partial melting, super lateral growth and complete melting. Exploiting ellipsometry and atomic force microscopy, it is shown that ELC of nc-Si has very low energy density threshold of 95 mJ/cm² for complete melting, and that re-crystallization to large grains of ∼ 2 μm can be achieved by multi-shot irradiation at an energy density as low as 260 mJ/cm² when using nc-Si when compared to 340 mJ/cm² for the ELC of a-Si films.     

Temperature dependence of Fluorine-doped tin oxide films produced by ultrasonic spray pyrolysis

Fluorine-doped tin oxide (FTO) films were prepared at different substrate temperatures by ultrasonic spray pyrolysis technique on glass substrates. Among F-doped tin oxide films, the lowest resistivitiy was found to be 6.2 × 10^− 4 Ω-cm for a doping percentage of 50 mol% of fluorine in 0.5 M solution, deposited at 400 °C. Hall coefficient analyses and secondary ion mass spectrometry (SIMS) measured the electron carrier concentration that varies from 3.52 × 10²⁰ cm^− 3 to 6.21 × 10²⁰ cm^− 3 with increasing fluorine content from 4.6 × 10²⁰ cm^− 3 to 7.2 × 10²⁰ cm^− 3 in FTO films deposited on various temperatures. Deposition temperature on FTO films has been optimized for achieving a minimum resistivity and maximum optical transmittance.     

Effects of substrate on the structural, electrical and optical properties of Al-doped ZnO films prepared by radio frequency magnetron sputtering

Transparent and conductive Al-doped ZnO (AZO) thin films were deposited on substrates including alkali-free glass, quartz glass, Si, and SiO₂ buffer layer on alkali-free glass by using radio frequency magnetron sputtering. The effects of different substrates on the structural, electrical and optical properties of the AZO films were investigated. It was found that the crystal structures were remarkably influenced by the type of the substrates due to their different thermal expansion coefficients, lattice mismatch and flatness. The AZO film (100 nm in thickness) deposited on the quartz glass exhibited the best crystallinity, followed sequentially by those deposited on the Si, the SiO₂ buffer layer, and the alkali-free glass. The film deposited on the quartz glass showed the lowest resistivity of 5.14 × 10^− 4 Ω cm among all the films, a carrier concentration of 1.97 × 10²¹ cm^− 3 and a Hall mobility of 6.14 cm²/v·s. The average transmittance of this film was above 90% in the visible light spectrum range. Investigation into the thickness-dependence of the AZO films revealed that the crystallinity was improved with increasing thickness and decreasing surface roughness, accompanied with a decrease in the film resistivity.     

Deposition of silicon nitride thin films by hot-wire CVD at 100 °C and 250 °C

Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 ?/s) and at low substrate temperature. Films were deposited using NH₃/SiH₄ flow rate ratios between 1 and 70 and substrate temperatures of 100 °C and 250 °C. For NH₃/SiH₄ ratios between 40 and 70, highly transparent (T ~ 90%), dense films (2.56-2.74 g/cm³) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 ?/s and < 0.5 ?/s were obtained for films deposited at 100 °C and 250 °C, respectively. Films deposited at both substrate temperatures showed electrical conductivity ~ 10^− 14 Ω^− 1 cm^− 1 and breakdown fields > 10 MV cm^− 1.     

Growth and characterization of LiNiVO4 thin film cathode by pulsed laser deposition

Crystallized LiNiVO₄ thin films have been prepared by pulsed laser deposition and their physical and electrochemical properties have been studied. With the increase of deposition temperatures and oxygen pressures, the crystallization became better, but accompanied with large sizes of grains. The initial discharge capacity of the film deposited at 873 K and 40 Pa of oxygen was just around 7.2 μA h/cm² μm when it was cycled between 3.0 and 4.8 V with a current density of 10 μA h/cm². Cyclic voltammetry at a sweep rate of 0.1 mV/s showed a main anodic peak at 4.20 V, a weak anodic peak at 4.59 V and a cathodic peak located at 3.73 V. Based on the linear relationship between the peak currents of cathodic peaks and the square roots of scan rates, the diffusion coefficient was estimated to be about 2.3 × 10^− 15 cm²/s. Electrochemical impedance spectra revealed high charge-transfer resistance of Li-ion, such as about 9000 Ω at 4.0 V. The extremely slow Li-ion diffusion and high charge-transfer resistance indicate that the electrochemical reaction in LiNiVO₄ thin films is sluggish.     

Melt growth and characterization of Mg2Si bulk crystals

We have grown Mg₂Si bulk crystals by the vertical Bridgman method using a high-purity Mg (6N-up) source. The grown crystals were single-phase Mg₂Si and had well-developed grains (1-5 mm³). Laue observations and SEM-EDX observations confirmed that crystalline quality in the grains was single crystal with stoichiometric composition. Electron concentration of the single crystalline specimens grown from 6N-up-Mg was 4.0 × 10¹⁵ cm^− 3 at room temperature (RT). This value is more than one order of magnitude lower than that of specimens grown from 4N-Mg [(5-7) × 10¹⁶ cm^− 3]. The Hall mobility of 14,500 cm²/Vs was observed at 45 K in the crystals grown from 6N-up-Mg. We also found that Al impurity plays an important role in the crystals grown from a low-purity Mg source. From the optical absorption measurement, we estimated that the indirect energy gap was about 0.66 eV at 300 K and about 0.74 eV at 4 K.     

Oxidation of magnetron sputtered La-Si thin films for solide oxide fuel cell electronlytes

La-Si thin films were deposited on stainless steel substrates by magnetron sputtering from pure La and Si targets. The Si/(Si + La) atomic ratio in the films was varied from 43.2 to 59.3% by adjusting the discharge current on the La target. The films had a homogeneous chemical composition down to the substrate and sharp interfaces. Annealing the films in air at 1173 K promotes the formation of apatite-structure La_9.33Si₆O₂₆ and the diffusion of different species from the film to the substrate and vice-versa, resulting in broadening the interfaces. X-Ray diffraction showed that all the as-deposited films had an amorphous structure. The formation of the LaSi₂ phase at intermediate temperatures was observed for the films deposited with higher Si contents while the films deposited with lower Si contents remained amorphous up to the start of the apatite structure crystallization process. The lanthanum silicate apatite-like phase (La_9.33Si₆O₂₆) was obtained only after annealing at 1173 K, excepted for the film with the lower Si content which is already partially crystallized after annealing at 1073 K. Quite pure La_9.33Si₆O₂₆ was obtained only after annealing the film with the highest Si content (Si/(Si + La) = 59.3%) although the theoretical Si/(Si + La) atomic ratio for apatite structure lanthanum silicate is 39%. For the other films, La₂O₃ was always detected when the lanthanum silicate phase was formed. Both phenomena clearly resulted from the strong diffusion of silicon excess towards the stainless steel substrate.     

Ultralow surface recombination in p-Si passivated by catalytic-chemical vapor deposited alumina films

The passivation effects of AlOx films were investigated for p-type crystalline Si (c-Si) solar cells. The AlOx films were deposited on 10 Ωcm c-Si substrates by catalytic chemical vapor deposition (Cat-CVD) using tri-methyl aluminum (TMA) and O₂ at a film temperature of 230 °C. The surface recombination velocity (S₀) at the AlOx/Si interface was measured to be below 0.5 cm/s for AlOx films deposited with O₂/TMA gas flow-rate ratios of 15-35. This ultra low S₀ was achieved primarily by band bending due to the negative interface fixed-charge density (N_f) of an order of 10¹² charges/cm². The decrease in interface trapping density D_it in the negative fixed charge region assists in decreasing S₀.     

Characterization of fluorine-doped silicon dioxide films by Raman spectroscopy and Electron-spin resonance

We have measured Raman and Electron-spin resonance (ESR) spectra of fluorine-doped SiO₂ films deposited by two different methods. In high-density plasma (HDP) films, the Raman band at about 490 cm^− 1 becomes drastically stronger as the F/Si ratio increases, whereas the Raman band from threefold ring defect is independent of the F/Si ratio. The unusual increase of the intensity of the 490 cm^− 1 band in HDP films has been interpreted in terms of the existence of Si-Si clusters. From a comparison between Raman spectra of HDP film and plasma chemical vapor deposition using tetraethoxysilane (p-TEOS) film with the same F/Si ratios it has been found that HDP film has more Si-Si bonds and threefold ring defects than p-TEOS film. Furthermore, the polarized Raman spectra in the 810 cm^− 1 bands indicate that inhomogeneous SiO₂ clusters of various sizes should exist in the network structure of HDP film. The result of the ESR measurement shows that HDP films have fewer dangling bonds than p-TEOS films. It is considered that many Si-Si clusters, threefold ring defects, and inhomogeneous SiO₂ cluster sizes, and the few dangling bonds in HDP films give rise to the film properties of low stress, good adhesion with Si substrate, and low water permeation.     

Growth and surface characterization of magnetron sputtered zinc nitride thin films

Zinc nitride films were deposited on Si(100) substrates at room temperature using RF-magnetron sputtering in pure N₂ and in Ar + N₂ atmospheres. Two active phonon modes (270.81 and 569.80 cm^− 1) are observed in Raman spectra for films deposited in Ar + N₂ atmosphere. Atomic force microscopy showed that the average surface roughness of the films deposited in pure N₂ atmosphere (1.3-3.33 nm) was less than for those deposited in a mixed Ar + N₂ atmosphere (10.3-12.8 nm). Low temperature cathodoluminescence showed two emission bands centered at 2.05 eV and 3.32 eV for both types of films.     

Pulsed laser deposition of crystalline ZrC thin films

ZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique under various conditions. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), X-ray diffraction and reflectivity, spectroscopic ellipsometry, and four point probe measurements were used to characterize the properties of the deposited films. It has been found that crystalline films could be grown only by using laser fluences higher than 5 J/cm² and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm² and a substrate temperature of 700 °C, cubic ZrC films (a = 0.469 nm) exhibiting a (200)-texture were deposited under vacuum or low pressure C₂H₂ atmosphere. These films were smooth, with surface roughness values below 1.0 nm and mass densities around the tabulated value of 6.7 g/cm³. AES depth profiling investigations showed oxygen contamination around 7% in the bulk region. Despite the relatively high levels of oxygen contamination, the deposited ZrC films were very conductive. The use of a low C₂H₂ pressure atmosphere during deposition had a small beneficial effect on crystallinity and stoichiometry of the films.     

Physical properties of flash evaporated In2O3 films prepared at different substrate temperatures

Indium oxide (In₂O₃) thin films were prepared by flash evaporated technique under various substrate temperatures in the range of 303-673 K and systematically studied the structural, electrical and optical properties of the deposited films. The films formed at substrate temperatures of < 373 K were amorphous while those deposited at higher substrate temperatures (≥ 373 K) were polycrystalline in nature. The optical band gap of the films decreased from 3.71 eV to 2.86 eV with the increase of substrate temperature from 303 K to 673 K. Figure of merit of the films increased from 2.8 × 10³ Ω^− 1 cm^− 1 to 4.2 × 10³ Ω^− 1 cm^− 1 with increasing substrate temperature from 303 K to 573 K, thereafter decreased to 2.2 × 10³ Ω^− 1 cm^− 1 at higher temperature of 673 K.     

Deposition and characterization of BN/Si(0 0 1) using tris(dimethylamino)borane

Boron nitride thin films could be deposited on Si(0 0 1) by chemical vapor deposition (CVD) at atmospheric pressure using a single source precursor. IR absorption spectra of films deposited between 750 and 1000°C using B[N(CH₃)₂]₃ (tris(dimethylamino)borane, TDMAB) as the boron and nitrogen source showed a peak absorption at ∼1360 cm⁻¹ characteristic of the in-plane vibrational mode seen in h-BN. It was noted that the mode at 800 cm⁻¹ is very weak. The observed growth rate varied exponentially with temperature in the range 850-900°C. Ellipsometry measurements were used to investigate the thickness and optical constant of the films. The refractive index, slightly lower than the bulk material, is close to 1.65-1.7 depending on the surface morphology of the films. The surface morphology of thin layers has been observed by atomic force microscopy with an increase of the surface roughness from 0.3 to 3.5 nm as the growth temperature increases from 800 to 950°C.     

Atomic Vapor Depositions of Ti-Ta-O thin films for Metal-Insulator-Metal applications

Atomic Vapor Deposition technique was applied for the depositions of Ti-Ta-O oxide films for Metal-Insulator-Metal capacitors used in back-end of line for Radio Frequency applications. Composition, crystallinity, thermal stability and electrical properties were studied. Ti-Ta-O films, with the ratio of Ta/Ti ~ 1.5, deposited at 400 °C on TiN electrodes, were amorphous and possessed a dielectric constant of 50 with low voltage linearity coefficients and leakage currents densities as low as 10^− 7 A/cm² at 1 V. The films, deposited on Si wafers, were amorphous up to the annealing temperature of 700 °C and crystallized in orthorhombic Ta₂O₅ phase at higher temperatures.     

Low resistivity transparent conducting CdO thin films deposited by DC reactive magnetron sputtering at room temperature

Transparent conducting cadmium oxide (CdO) films were deposited on PET (polyethylene terephthalate) substrate by DC reactive magnetron sputtering at room temperature. All the films deposited at room temperature were polycrystalline in rock-salt structure. Dependences of the physical properties of the CdO films on the oxygen partial pressure were systematically studied. The films deposited at low oxygen flow rate were (200) oriented, while the films deposited at an oxygen flow rate greater than 20 sccm were (111) oriented. The average grain size of the CdO films decreased as the oxygen flow rate increases as determined by XRD and SEM. The Hall effect measurement showed that CdO films have high concentration, low resistivity, and high mobility. Both the mobility and the concentration of the carrier decreased with the increase of the oxygen flow rate. A minimum sheet resistance of 36.1 Ω/□, or a lowest resistivity of 5.44 × 10^− 4 Ω cm (6.21 × 10²⁰/cm³, μ = 19.2 cm²/Vs) was obtained for films deposited at an oxygen flow rate of 10 sccm.     

Low temperature silicon epitaxy from trichlorosilane via mesoplasma chemical vapor deposition

Epitaxial silicon thick films have been deposited at around 400 °C by mesoplasma chemical vapor deposition with trichlorosilane (TCS) as source gas. The deposition rate of the Si films increases linearly with the TCS flow rate and reaches 30 nm/s at 15 sccm of TCS. These films have exhibited relatively high hall mobility (~ 200 cm²/V-s) independently of the deposition rate.     

Preparation of wide gap Cu(In,Ga)S2 films on ZnO coated substrates

We have prepared Cu(In,Ga)S₂ films at growth temperatures from 300 °C to 580 °C with a homogeneous gallium depth distribution (estimated band gap 1.67 eV) onto soda lime glass (SLG) substrates with one of three different kinds of back contact: Mo(1000 nm), ZnO(500 nm), and Mo(30 nm)/ZnO(500 nm), respectively. We have also investigated the depth profiles of Zn and Na (diffused from SLG) in Cu(In,Ga)S₂ films by secondary ion mass spectroscopy (SIMS). The efficiency of solar cells on Mo increases with increasing growth temperature. It is higher on Mo/ZnO than on ZnO, and increases from 350 °C to 450 °C, then decreases above 450 °C. It was observed by SIMS that the amount of Zn in Cu(In,Ga)S₂ on Mo/ZnO is lower than it is on ZnO up to 450 °C, and a large amount of Zn diffuses into absorbers over 450 °C, which contributes to decreasing efficiency. The amount of Na in the back contact increases with growth temperature. The depth distribution of Na in Cu(In,Ga)S₂ films on Mo is almost constant in the order of 10¹⁷-10¹⁸ cm^− 3, on ZnO and Mo/ZnO the Na concentration increases towards the surface and is in the range of 10¹⁵-10¹⁷ cm^− 3.