Characterization of electron irradiated GaN n-p diode

Electron-beam irradiated GaN n⁺-p diodes were characterized by deep level transient spectroscopy (DLTS) and optical responsivity measurements. The GaN n⁺-p diode structures were grown by metal organic chemical vapor deposition technique, and the electron irradiation was done by the energies of 1 MeV and 2 MeV with dose of 1 × 10¹⁶ cm^− 2. In DLTS measurement, the defect states of E_c − 0.36 eV and E_c − 0.44 eV in the electron irradiated diodes appeared newly. The optical responsivity of GaN n⁺-p diode was characterized in ultra-violet region, and then the maximum optical responsivity at 350 nm was decreased after electron-beam irradiation.     

Characterization of ultra-thin TiO2 films grown on Mo(112)

Ultra-thin TiO₂ films were grown on a Mo(112) substrate by stepwise vapor depositing of Ti onto the sample surface followed by oxidation at 850 K. X-ray photoelectron spectroscopy showed that the Ti 2p peak position shifts from lower to higher binding energy with an increase in the Ti coverage from sub- to multilayer. The Ti 2p peak of a TiO₂ film with more than a monolayer coverage can be resolved into two peaks, one at 458.1 eV corresponding to the first layer, where Ti atoms bind to the substrate Mo atoms through Ti-O-Mo linkages, and a second feature at 458.8 eV corresponding to multilayer TiO₂ where the Ti atoms are connected via Ti-O-Ti linkages. Based on these assignments, the single Ti 2p_3/2 peak at 455.75 eV observed for the Mo(112)-(8 × 2)-TiO_x monolayer film can be assigned to Ti³⁺, consistent with our previous results obtained with high-resolution electron energy loss spectroscopy.     

The electrical measurements in poly(2-chloroaniline) based thin film sandwich devices

Al/P2ClAn(CH₃COOH)/p-Si/Al structure has been obtained by evaporation of the polymer P2ClAn(CH₃COOH) on the front surface of p-type silicon substrate, P2ClAn: the poly(2-chloroaniline). The P2ClAn emeraldine salt was chemically synthesized by using acetic acid (CH₃COOH). It has been seen that the current-voltage characteristics of the heterojunction obey to space charge-limited current model. Furthermore, P2ClAn(CH₃COOH) was characterized by using Fourier Transform Infrared (FTIR) and Ultraviolet-Visible (UV-Vis) spectroscopies. An average value of μ, 2.43 × 10^− 5 cm² V^− 1 s^− 1, was obtained for the mobility of the P2ClAn(CH₃COOH); this value is in agreement with the value of about 10^− 4 cm² V^− 1 s^− 1 given for the conjugated polymeric thin films in the literature. Low capacitance-voltage-frequency and conductance-frequency measurements have been made at the voltages of 0.00, 0.02 and 0.30 V in the frequency range of 100 Hz-2.0 MHz. An average value of 7.91 × 10¹¹ cm^− 2 eV^− 1 for interface state density has been obtained from the frequency-capacitance characteristics.     

The development of the gadolinium surface state

The critical coverage for formation of the a₁(d_3z²-r² and s) symmetry gadolinium surface state appears to be in region of one monolayer for gadolinium on W(1 1 2) and is evident from a change in the density of states in the region near the Fermi level and a change in the band symmetry. Below one monolayer coverage, strong hybridization between the Gd overlayer and the W(1 1 2) surface dominates the electronic structure.     

p-type doping of ZnO by means of high-density inductively coupled plasmas

A custom-designed inductively coupled plasma assisted radio-frequency magnetron sputtering deposition system has been used to fabricate N-doped p-type ZnO (ZnO:N) thin films on glass substrates from a sintered ZnO target in a reactive Ar + N₂ gas mixture. X-ray diffraction and scanning electron microscopy analyses show that the ZnO:N films feature a hexagonal crystal structure with a preferential (002) crystallographic orientation and grow as vertical columnar structures. Hall effect and X-ray photoelectron spectroscopy analyses show that N-doped ZnO thin films are p-type with a hole concentration of 3.32 × 10¹⁸ cm^− 3 and mobility of 1.31 cm² V^− 1 s^− 1. The current-voltage measurement of the two-layer structured ZnO p-n homojunction clearly reveals the rectifying ability of the p-n junction. The achievement of p-type ZnO:N thin films is attributed to the high dissociation ability of the high-density inductively coupled plasma source and effective plasma-surface interactions during the growth process.     

XAFS and CEMS study of dilute magneto-optical semiconductor, Fe doped TiO2 films

TiO₂ films doped with 6% Fe were prepared by pulsed laser deposition (PLD) under different oxygen pressures, and characterized by X-ray absorption fine spectra (XAFS) and conversion electron Mössbauer spectra (CEMS). The edge energy and spectrum profiles of Fe- and Ti K X-ray absorption showed only Fe³⁺ and Ti⁴⁺ states for rutile TiO₂ films prepared under 10^− 1 Torr, the metallic Fe and Ti⁴⁺ for rutile TiO₂ films prepared in 10^− 6 Torr, and the metallic Fe and the average valance of less than “4+” for Ti in Ti_nO_2n−x films prepared by the PLD under 10^− 8 Torr. The metallic Fe clusters are also found in the TEM images of Ti_nO_2n−x film. Magnetic property of Fe doped TiO₂ films prepared by PLD at high vacuum (10^− 6 and 10^− 8 Torr) is considered to originate mainly from the magnetic metal iron clusters.     

Freezing transition of Langmuir-Gibbs alkane films on water

We show that adding CTAB (CTAB, hexadecyltrimethylammonium bromide) in sub-millimolar bulk concentrations to water reduces its surface tension (ST) to a level where spontaneous surface spreading of a monolayer of medium-sized alkane (C_nH_2n+2, 12 ≤ n ≤ 17) occurs. ST and X-ray reflectivity (XR) measurements are used to show that the quasi two-dimensional (2D) liquid monolayer can be driven through a reversible surface freezing phase transition upon cooling. Grazing incidence diffraction (GID) shows that the frozen monolayer is crystalline, hexagonally packed, with surface-normal molecules, and a crystalline coherence length of at least a few hundred Å, very similar to the structure of surface-frozen (SF) monolayers at the surface of similar-length alkane melts.     

Neutron diffraction study of p-phenylene oligomer molecules adsorbed onto graphite

Neutron scattering experiments have been carried out on low-coverage films of the aromatic p-phenylene oligomer molecules (p-nP, C_6nH_{10 + 4(n − 2)}, where n indicates the number of phenyl units per molecule) physisorbed onto the surface of graphite. The molecular arrangement within these films has been determined as a function of temperature, number of molecular layers, and molecular length. Analysis of the diffraction data reveals two-dimensional film structures consistent for molecules having their long-axis parallel to the underlying substrate. The experimental measurements provide evidence for a melting transition in a monolayer film and thermal expansion of a bilayer film of p-terphenyl (p-3P). The planes of the phenyl rings are approximately parallel to the substrate in the monolayer structure but rotate out of this plane by 60 ± 20° in the bilayer film of p-3P. As the number of phenyl units is increased from n = 3 to n = 6, bilayer structures are observed having similar packing arrangements of the molecules but with lattice parameters that scale with molecular length.     

Frequency upconversion fluorescence studies of Er/Yb-codoped KNbO3 phosphors

Different concentrations of Er³⁺ and Yb³⁺ ions-doped potassium niobate (K_0.9NbO₃:Yb_(x)Er_{(0.1 − x)} for x = 0, 0.01, 0.05, 0.09 and 0.1) polycrystalline powder phosphors were prepared by the conventional solid state reaction method and were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Energy transfer and upconversion fluorescence properties of the Yb³⁺ and Er³⁺-codoped phosphors have been discussed. The XRD data has shown mono-phase for pure KNbO₃ while the doped samples represented additional phase formation. The SEM micrographs represented the rectangular crystal growth habit for the KNbO₃ phosphors when doped with 0.1 mol of Er³⁺ ions. An intense green emission at 557 nm along with a red emission at 674 nm was observed when the doped samples were excited with 975 nm IR radiation. The upconversion mechanism has been discussed based on the excited state absorption and energy transfer mechanisms.     

Characteristics of nano-crystalline diamond films prepared in Ar/H2/CH4 microwave plasma

Characteristics of nano-crystalline diamond (NCD) thin films prepared with microwave plasma chemical vapor deposition (CVD) were studied in Ar/H₂/CH₄ gas mixture with a CH₄ gas ratio of 1-10% and H₂ gas ratio of 0-15%. From the Raman measurements, a pair of peaks at 1140 cm^− 1 and 1473 cm^− 1 related to the trans-polyacetylene components peculiar to nano-crystalline diamond films was clearly observed when the H₂ gas ratio of 5% was added in Ar/H₂/CH₄ mixture. With an increase of H₂ gas content up to 15%, their peaks decreased, while a G-peak at roughly 1556 cm^− 1 significantly increased. The degradation of NCD film quality strongly correlates with the decrease of C₂ optical emission intensity with the increase of hydrogen gas contents. From the surface analysis with atomic force microscopy (AFM), it was found that grain sizes of NCD films were typically of 10-100 nm in case of 5% H₂ gas addition.     

Electron stimulated desorption from aluminium alloy and aluminium coated stainless steel

The electron stimulated desorption (ESD) yield was measured at the internal surface of tubular samples made of aluminium alloy and aluminium coated stainless steel. The ESD yields were measured as a function of electron accumulated dose to a maximum of 3 × 10²² e⁻/m² at electron energy of 500 eV, then as a function of electron energy between 40 eV and 5 keV. The ESD yields as a function of electron energy were linear for all gasses except CH₄ and CO₂.     

Nonlinear optical properties of laser deposited CuO thin films

In this work we investigate the third-order optical nonlinearities in CuO films by Z-scan method using a femtosecond laser (800 nm, 50 fs, 200 Hz). Single-phase CuO thin films have been obtained using pulsed laser deposition technique. The structure properties, surface image, optical transmittance and reflectance of the films were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and UV-vis spectroscopy. The Z-scan results show that laser-deposited CuO films exhibit large nonlinear refractive coefficient, n₂ = − 3.96 × 10^− 17 m²/W, and nonlinear absorption coefficient, β = − 1.69 × 10^− 10 m/W, respectively.     

Controlled hydrothermal synthesis of VO2(B) nanobelts

Large-scale VO₂(B) nanobelts have been synthesized by hydrothermal strategy via one-step method using V₂O₅ as vanadium source and C₆H₅-(CH₂)_n-NH₂ with n = 2 and 4 (2-phenylethylamine and 4-phenylbutylamine) as structure-directing templates. The composition and morphology of the nanobelts were established by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy (FTIR). The as-obtained VO₂(B) nanobelts have a length of 3-10 μm, a wideness of 100-375 nm and a thickness of 30-66 nm.     

Ultra-thin zinc oxide film on Mo(100)

Zinc oxide films on a single crystal Mo(100) substrate were fabricated by annealing the pre-deposited metal Zn films in 10^− 5-10^− 4 Pa O₂ ambience at 300-525 K, and were characterized by in situ Auger electron spectroscopy, electron energy loss spectroscopy, low energy electron diffraction and high-resolution electron energy loss spectroscopy. The results show that the atomic ratio of oxygen to zinc in zinc oxide film is significantly dependent on sample annealing temperature and O₂ pressure. A stoichiometric zinc oxide film has been obtained under ∼10^− 4 Pa O₂ at about 400 K. A redshift of Fuchs-Kliewer phonon energy correlated with surface oxygen deficiency is observed.     

Fabrication and electrochemical characterization of HRP-lipid Langmuir-Blodgett film and its application as an H2O2 biosensor

The formation of horseradish peroxidase-lipid Langmuir-Blodgett film and its applicability as a biosensor have been studied. HRP was spread directly onto the subphase covered with a layer of lipid in LB trough. Our experimental results showed that surface pressure of this film from liquid to solid state ranged between 15 to 25 mN/m. At surface pressure of 25 mN/m, the monolayer was successfully transferred onto the gold surface. In addition, electrochemical properties of this film showed that protein molecules still kept their natural structure and can give a well electrocatalytic activity to H₂O₂. As an H₂O₂ biosensor, this LB film was able to detect concentration of H₂O₂ which were 3 × 10^− 7 M.     

Amorphous Si1−xCx:H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells

B-doped hydrogenated amorphous silicon carbon (a-Si_1−xC_x:H) films have been prepared by hot-wire CVD (HWCVD) using SiH₃CH₃ as the carbon source gas. The optical bandgap energy and dark conductivity of the film are about 1.94 eV and 2 × 10^− 9 S/cm, respectively. Using this film as a window layer, we have demonstrated the fabrication of solar cells having a structure of the textured SnO₂(Asahi-U)/a-Si_1−xC_x:H(p)/a-Si_1−xC_x:H(buffer)/a-Si:H(i)/μc-Si:H(n)/Al. The conversion efficiency of the cell is found to be 7.0%.     

High frequency characteristics of tin oxide thin films on Si

High frequency characteristics of tin oxide (SnO₂) thin films were studied. SnO₂ thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the metal-oxide-semiconductor (Au/SnO₂/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D_it, ranges from 2.44 × 10¹³ cm⁻² eV⁻¹ at 300 kHz to 0.57 × 10¹³ cm⁻² eV⁻¹ at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/ω-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metal-oxide-semiconductor structure.     

An investigation on palladium sulphide (PdS) thin films as a photovoltaic material

Polycrystalline PdS thin films with tetragonal structure have been grown by direct sulphuration of Pd layers. They are formed by crystallites of size ∼ 50 nm. As-grown PdS films show a Seebeck coefficient, S = − 250 ± 30 μV/K, which indicates an n-type conductivity. Electrical resistivity of the samples, measured by the four contact probe, is (6.0 ± 0.6) × 10^− 2 Ω·cm. Hall effect measurements, confirms n-type conductivity with a negative carrier density n = (8.0 ± 2.0) × 10¹⁸ cm^− 3 and electron mobility μ of (20 ± 2) cm²/V s. Band gap energy (E_g) and absorption coefficient (α) are determined from the optical transmission and reflectance of the films. A direct transition with energy gap E_g = (1.60 ± 0.01) eV is obtained. Optical absorption coefficient in the range of photon energies hν > 2.0 eV is higher than 10⁵ cm^− 1. All these properties make PdS thin films a good alternative material for solar applications.     

Excitons in organic-inorganic hybrid compounds (CnH2n + 1NH3)2PbBr4 (n = 4, 5, 7 and 12)

Thin films of microcrystalline (C_nH_2n + 1NH₃)₂PbBr₄ (n = 4, 5, 7 and 12) have been prepared by a modified spin-coating method, and the effect of the number of carbon atoms of the alkyl chain length (n) on optical properties has been investigated. Absorption spectra reveal that (C_nH_2n + 1NH₃)₂PbBr₄ films show stable excitons with a binding energy of a few hundred meV. The excitonic structure of (C_nH_2n + 1NH₃)₂PbBr₄ varies with the number of carbon atoms. The lowest-energy exciton splits into a few fine-structure levels at low temperature. (C_nH_2n + 1NH₃)₂PbBr₄ films (n = 5, 7 and 12) show not only singlet excitons but also triplet excitons at low temperature, while (C₄H₉NH₃)₂PbBr₄ films show only singlet excitons. The intersystem crossing from excited singlet state to triplet state plays an important role in the relaxation process of excitons.     

Ionization energies of the non-stoichiometric LinFn−1 (n = 3, 4, 6) clusters

Ionization energies of non-stoichiometric Li_nF_n−1 (n = 3, 4, 6) clusters determined by a thermal ionization mass spectrometry (TIMS) were 4.2 ± 0.2 eV for Li₃F₂, 4.3 ± 0.2 eV for Li₄F₃ and 4.1 ± 0.2 eV for Li₆F₅. The ionization energy of Li₆F₅ cluster was obtained experimentally for the first time. The ionization energies of Li₃F₂ and Li₄F₃ are in correlation with the results obtained by photoionization time-of-flight mass spectrometry. The determined ionization energies are comparable with theoretical ionization energies calculated by ab initio method. The theoretical predictions supported that the most stable isomers of a non-stoichiometric cluster Li_nF_n−1 (n = 3 and n = 4) in which the excess electron localizes on a specific site have a “segregated” electronic structure composed of the metallic part and ionic part.