Natural and persistent superhydrophilicity of SiO2/TiO2 and TiO2/SiO2 bi-layer films

Sol-gel SiO₂/TiO₂ and TiO₂/SiO₂ bi-layer films have been deposited from a polymeric SiO₂ solution and either a polymeric TiO₂ mother solution (MS) or a derived TiO₂ crystalline suspension (CS). The chemical and structural properties of MS and CS bi-layer films heat-treated at 500 °C have been investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscospy. Water contact angle measurements show that MS SiO₂/TiO₂ and CS TiO₂/SiO₂ bi-layer films exhibit a natural superhydrophilicity, but cannot maintain a zero contact angle for a long time over film aging. In contrast, CS SiO₂/TiO₂ bi-layer films exhibit a natural, persistent, and regenerable superhydrophilicity without the need of UV light. Superhydrophilic properties of bi-layer films are discussed with respect to the nature of the TiO₂ single-layer component and arrangement of the bi-layer structure, i.e. TiO₂ underlayer or overlayer.     

Stability and effect of annealing on the optical properties of plasma-deposited Ta2O5 and Nb2O5 films

Tantalum and niobium oxide optical thin films were prepared at room temperature by plasma-enhanced chemical vapor deposition using tantalum and niobium pentaethoxide (M(OC₂H₅)₅) precursors. We studied the evolution of their optical and microstructural properties as a result of annealing over a broad temperature range from room temperature up to 900 °C. The as-deposited films were amorphous; their refractive index, n, and extinction coefficient, k, at 550 nm were n = 2.13 and k < 10^− 4 for Ta₂O₅, and n = 2.24 and k < 10^− 4 for Nb₂O₅. The films contained a small amount of residual carbon (∼ 2-6 at.%) bonded mostly to oxygen. During annealing, the onset of crystallization was observed at approximately T_C1 = 650 °C for Ta₂O₅ and at T_C1 = 450 °C for Nb₂O₅. Upon annealing close to T₁ (300 °C for Nb₂O₅ and 400 °C for Ta₂O₅), n at 550 nm decreased by less than 1%. This was correlated with the decrease of carbon content, as suggested by Fourier transform infrared spectroscopy, elastic recoil detection and static secondary ion mass spectroscopy (SIMS) results. During annealing, we observed phase transition from the δ- (hexagonal) phase to the L- (orthorhombic) phase between 800 °C and 900 °C for Ta₂O₅, and between 600 °C and 700 °C for Nb₂O₅. The structural changes were also marked by silicon diffusion from the substrate into the oxide layer at annealing temperatures above 500 °C for Ta₂O₅ and above 400 °C for Nb₂O₅. As a consequence of oxygen, silicon and metal interdiffusion, the interface between the Si substrate and the metal oxide (Ta₂O₅ or Nb₂O₅) is characterized by its broadening, well documented by spectroscopic ellipsometry and SIMS data.     

Low-temperature sintering of (Zn0.8 Mg0.2)2SiO4-TiO2 ceramics

Effect of Li₂O-B₂O₃-SiO₂ (LBS) glass on the sintering behavior and the microwave dielectric properties of (Zn_0.8 Mg_0.2)₂SiO₄-TiO₂ (ZMST) ceramics were investigated. The Li₂O-B₂O₃-SiO₂ glass lowered the sintering temperature of ZMST ceramics effectively from 1250 to 870 °C. The unknown second phase, which was formed in the ZMST ceramics increased with the addition of LBS glass. With increasing the LBS glass content, the bulk density, dielectric constant (ε_r) and the maximum Q × f value decreased, and the temperature coefficient of resonant frequency (τ_f) shifted to a negative value. (Zn_0.8 Mg_0.2)₂SiO₄-TiO₂ ceramics with 3 wt.% Li₂O-B₂O₃-SiO₂ glass sintered at 870 °C for 2 h shows excellent dielectric properties: ε_r = 8.48, Q × f = 11500 GHz, and τ_f = 0 ppm/°C.     

Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH₄/CH₄/H₂ and their structural properties were investigated by X-ray diffraction, Fourier transform infrared absorption and Raman scattering spectroscopies. At 2 Torr, Si-crystallite-embedded amorphous SiC (a-Si_1 − xC_x:H) grew at filament temperatures (T_f) below 1600 °C and nanocrystalline cubic SiC (nc-3C-SiC:H) grew above T_f = 1700 °C. On the other hand, At 4 Torr, a-Si_1 − xC_x:H grew at T_f = 1400 °C and nc-3C-SiC grew above T_f = 1600 °C. When the intakes of Si and C atoms into the film per unit time are almost the same and H radicals with a high density are generated, which takes place at high T_f, nc-3C-SiC grows. On the other hand, at low T_f the intake of Si atoms is larger than that of C atoms and, consequently, Si-rich a-Si_1 − xC_x:H or Si-crystallite-embedded a-Si_1 − xC_x:H grow.     

N2 decomposition by hot wire and N2 post-deposition treatment on hydrogenated microcrystalline silicon thin films

Post-deposition treatment of hydrogenated microcrystalline silicon (µc-Si:H) was carried out using a hot wire in atmospheres of N₂, N₂/H₂ or H₂ and the states of the bonds in the µc-Si:H films were investigated using X-ray photoelectron spectroscopy. For the µc-Si:H film treated in N₂ at the filament temperature (T_f) of 1600 °C, a weak N1s peak was observed. It increased slightly with increasing T_f from 1600 to 1900 °C and increased dramatically with increasing T_f from 1900 to 2000 °C. The N1s peak of the µc-Si:H film treated in N₂/H₂ at T_f = 2000  °C was one order of magnitude lower than that in N₂ at T_f = 2000 °C. These findings indicate that N₂ molecules decompose on the heated filament and that the addition of H₂ prevents N₂ decomposition.     

Crystal growth of Nd: NaLu(WO4)2

Nd: NaLu(WO₄)₂ single crystals have been grown by the top seeded solution growth (TSSG) method. The peaks shown in the X-ray powder diffraction pattern were assigned. The crystal belongs to the space group of I4₁/a and the unit-cell parameters were calculated as a = b = 5.168 Å, c = 11.174 Å, V = 298.46 Å³. It is a tetragonal scheelite-like single crystal. The DSC (differential scanning calorimeter) curve proved that the as-grown crystal had a glass transition at the temperature range of 733.8 °C-781.4 °C which was lower than its melting point at 1149.3 °C. The absorption and fluorescence spectra were measured at room temperature.     

Photoluminescence optimization of Er-doped SiO2 films synthesized by radiofrequency magnetron sputtering with energetic treatments during and after deposition

By radiofrequency magnetron sputtering co-deposition we synthesized Er:SiO₂ film 0.5 μm thick on silica substrates, with Er content < 0.3 atomic %. By changing the preparation condition (during deposition we have used an additional negative bias voltage applied to the substrates for inducing a low-energy ion bombardment, with or without a contemporary heating) and by varying the thermal treatment after the synthesis (the best conditions were 1 h in the range 700-800 °C, in air) we have obtained an Er:SiO₂ system with an intense photoluminescence emission at λ = 1.54 μm. The best-performing Er:SiO₂ samples obtained by sputtering have shown a photoluminescence response comparable to that of the typical Er:SiO₂ thin film systems obtained by conventional techniques used in applicative framework.     

Synthesis and microwave dielectric properties of CaO-MgO-SiO2 submicron powders doped with Li2O-Bi2O3 by sol-gel method

Using Ca(NO₃)₂·4H₂O, Mg(NO₃)₂·6H₂O, Si(OC₂H₅)₄, LiNO₃ and Bi(NO₃)₃·5H₂O as raw materials, CaO-MgO-SiO₂ submicron powders were prepared at low temperature by sol-gel method. The crystallization temperature was decreased enormously by the introduction of Li-Bi liquid phase sintering aids into Ca-Mg-Si sol, and the powders with average particle sizes of 80-100 nm and 200-400 nm were obtained at the calcining temperature of 750 °C and 800 °C, respectively. The sintering characteristic and dielectric properties of powders calcined at 750 °C with different content of powders calcined at 800 °C were studied. When the content of powders calcined at 800 °C was 10 wt%, the dielectric ceramic sintered at 890 °C had compact structure, and possessed excellent microwave dielectric properties: ?_r = 7.16, Q × f = 25630 GHz, τ_f = −69.26 ppm/°C.     

Cu5Sb2O8SiO4, an open framework structure with copper uncommon coordination modes: CuO6 and CuO8

Cu₅Sb₂O₈SiO₄ is orthorhombic, space group Pcca, with a = 19.031 (2), b = 9.3944 (6), c = 9.602 (2) Å, and z = 8. Its crystal structure was determined using single crystal X-ray diffraction (R₁ = 0.0432 and wR₂ = 0.1146). The compound presents a parwelite-like structure. Its anionic three-dimensional framework is built up of corner-sharing SbO₆ octahedra and SiO₄ tetrahedra, delimiting interconnected channels wherein Cu²⁺ with different coordination modes, are located. The χ_M and χ_MT product versus T plots, showed the Cu₅Sb₂O₈SiO₄ material to exhibit an anti-ferromagnetic character with a Neel temperature of about 27 K.     

Temperature compensated Sr2Al2SiO7 ceramic for microwave applications

The Sr–Gehlenite (Sr₂Al₂SiO₇) ceramic has been prepared by the conventional solid-state ceramic route. Phase pure Sr₂Al₂SiO₇ (SAS) ceramic sintered at 1525 °C for 4 h has ?_r = 7.2 and Q_u × f = 33,000 GHz. The SAS showed large negative τ_f of −37.0 ppm/ °C. A low value of τ_f was achieved by preparing SAS–CaTiO₃ composite. The composite with 0.04 volume fractions (V_f) CaTiO₃ sintered at 1500 °C for 4 h showed good microwave dielectric properties: ?_r = 8.6, Q_u × f = 20,400 GHz and τ_f = +8.5 ppm/°C.     

Effect of the SiO2/TiO2 ratio on the solid acidity of SiO2-TiO2/montmorillonite composites

SiO₂-TiO₂/montmorillonite composites with varying SiO₂/TiO₂ molar ratios were synthesized and the effect of the SiO₂/TiO₂ ratio on the solid acidity of the resulting composites was investigated. Four composites with SiO₂/TiO₂ molar ratios of 0, 0.1, 1 and 10 were synthesized by the reaction of colloidal SiO₂-TiO₂ particles prepared from alkoxides with sodium-montmorillonite at room temperature. The composites showed slight expansion and broadening of the XRD basal reflection, corresponding to the intercalation of fine colloidal SiO₂-TiO₂ particles into the montmorillonite sheets and incomplete intercalation to form disordered stacking of exfoliated montmorillonite and colloidal SiO₂-TiO₂ particles. The colloidal particles crystallized to anatase in the low SiO₂/TiO₂ composites but remained amorphous in the high SiO₂/TiO₂ composites. The specific surface areas (S_BET) of the composites measured by N₂ adsorption ranged from 250 to 370 m²/g, considerably greater than in montmorillonite (6 m²/g). The pore size increased with decreasing SiO₂/TiO₂ molar ratio of the composites. The NH₃-TPD spectra of the composites consisted of overlapping peaks, corresponded to temperatures of about 190 and 290 °C. The amounts of solid acid obtained from NH₃-TPD were 186-338 μmol/g in the composites; these values are higher than in the commercial catalyst K10 (85 μmol/g), which is synthesized by acid-treatment of montmorillonite. The present sample with SiO₂/TiO₂ = 0.1 showed the highest amount of acid, about four times higher than K10.     

Effect of CuO and MnO2 on sintering temperature, microstructure, and piezoelectric properties of 0.95(K0.5Na0.5)NbO3-0.05BaTiO3 ceramics

In this letter we report the effect of CuO and MnO₂ additives on the sintering behavior of 0.95(Na_0.5K_0.5)NbO₃-0.05BaTiO₃ ceramics. It was found that the composition corresponding to 0.95(Na_0.5K_0.5)NbO₃-0.05BaTiO₃ + 2.0 mol% CuO + 0.5 mol% MnO₂, sintered at 950 °C for 10 h, exhibited excellent piezoelectric properties corresponding to: k_p = 0.41, d₃₃ = 248 pC/N, Q_m = 305, ε₃^T/ε₀ = 1258, and T_c = 280 °C. These results indicate the prominence of this composition in lead-free systems.     

Copper phthalocyanine thin-film field-effect transistor with SiO2/Ta2O5/SiO2 multilayer insulator

Top-contact Copper phthalocyanine (CuPc) thin-film field-effect transistor (TFT) with SiO₂/Ta₂O₅/SiO₂ (STS) multilayer as the dielectric was fabricated and investigated. With the multi-layer dielectric, drive voltage was remarkably reduced. A relatively large on-current of 1.1 × 10⁻⁷ A at a V_GS of −15 V was obtained due to the strong coupling capability provided by the STS multilayer gate insulator. The device shows a moderate performance: saturation mobility of μ_sat = 6.12 × 10⁻⁴ cm²/V s, on-current to off-current ratio of I_on/I_off = 1.1 × 10³, threshold voltage of V_TH = −3.2 V and sub-threshold swing SS = 1.6 V/dec. Atomic force microscope images show that the STS multilayer has a relative smooth surface. Experiment results indicate that STS multilayer is a promising insulator for the low drive voltage CuPc-based TFTs.     

Subsolidus phase equilibria and the Li5Nd4FeO10 phase in the Li2O-Nd2O3-Fe2O3 system

A survey of the subsolidus phase equilibria in the system Li₂O-Nd₂O₃-Fe₂O₃ was made at subsolidus temperatures in the range 1000-1050 °C. A ternary phase was identified. The phase is centered on Li₅Nd₄FeO₁₀, with a cubic lattice a = 11.9494 Å. The compound melts incongruently at 1105 °C. The magnetic susceptibility was measured in the temperature range 4-300 K. The compound is paramagnetic in the temperature range 150-300 K and follows the Curie-Weiss law. At about T_N = 10 K, a long-range magnetic ordering is observed.     

The influence of oxygen ambient annealing conditions on the quality of Al/SiO2/n-type 4H-SiC MOS structure

The effect of reoxidation process in O₂ on the electrical properties of metal-oxide-semiconductor (MOS) capacitors fabricated on n-type 4H-SiC (0 0 0 1) is investigated. All samples were oxidized in wet oxygen at temperature of 1175 °C. Reoxidation process was carried out on four of the five samples. Samples were annealed at temperature of 700 °C and 800 °C for different process times. The reoxidation process in oxygen improves the quality of the dielectric layer and the interface of Al/SiO₂/n-type 4H-SiC MOS structure. The best quality of the SiO₂/SiC interface can be achieved for the MOS structure annealed in O₂ at higher temperature (800 °C) for longer time. However, higher and more uniformly distributed values of breakdown voltage were obtained for MOS structures reoxidized at temperature of 700 °C.     

Dielectric and pyroelectric anisotropy in melt-quenched BaBi2(Nb1 − xVx)2O9 ceramics

The (0 0 l) textured BaBi₂(Nb_1 − xV_x)₂O₉ (where x = 0, 0.03, 0.07, 0.1 and 0.13) ceramics were fabricated via the conventional melt-quenching technique followed by high temperature heat-treatment (800-1000 °C range). The influence of vanadium content and sintering temperature on the texture development and relative density were investigated. The samples corresponding to the composition x = 0.1 sintered at 1000 °C for 10 h exhibited the maximum orientation of about 67%. The Scanning electron microscopic studies revealed the presence of platy grains having the a-b planes perpendicular the pressing axis. The dielectric constant and the pyroelectric co-efficient values in the direction perpendicular to the pressing axis were higher. The anisotropy in the dielectric constant is about 100 (at 100 kHz) at the dielectric maximum temperature and anisotropy in the pyroelectric co-efficient is about 50 μC cm⁻² °C⁻¹ in the vicinity of pyroelectric anomaly for the sample corresponding to the composition x = 0.1 sintered at 1000 °C. Higher values of the dielectric loss and electrical conductivity were observed in the direction perpendicular to the pressing axis which is attributed to the high oxygen ion conduction in the a-b planes.     

Effect of CuO addition to Nd(Zn1/2Ti1/2)O3 ceramics on sintering behavior and microwave dielectric properties

The microwave dielectric properties and microstructures of CuO-doped Nd(Zn_1/2Ti_1/2)O₃ ceramics prepared by the conventional solid-state route were investigated. The prepared Nd(Zn_1/2Ti_1/2)O₃ exhibits a mixture of Zn and Ti showing 1:1 order in the B-site. As an appropriate sintering aid, not only did CuO lower the sintering temperature, it could effectively hold back the evaporation of Zn in the Nd(Zn_1/2Ti_1/2)O₃. Moreover, CuO only resided in boundaries, which was confirmed by EDX analysis. The measured lattice parameters of CuO-doped Nd(Zn_1/2Ti_1/2)O₃ (a = 5.4652 ± 0.0005 ?, b = 5.6399 ± 0.0007 ?, c = 7.7797 ± 0.0008 ? and β = 90.01 ± 0.01°) retained identical to that of the pure Nd(Zn_1/2Ti_1/2)O₃ in all cases. In comparison with the pure Nd(Zn_1/2Ti_1/2)O₃ ceramics, specimen with 1 wt.% CuO addition possesses a compatible combination of dielectric properties with a ε_r of 30.68, a Q × f of 158,000 GHz (at 8 GHz) and a τ_f of − 45 ppm/°C at 1270 °C. It also indicated a 60 °C lowering in the sintering temperature. The proposed dielectrics can be a very promising candidate material for microwave or millimeter wave applications requiring extremely low dielectric loss.     

Effects of hydrogen annealing on the microstructure and optical properties of single-phased Ag2O film deposited using direct-current reactive magnetron sputtering

Single-phased and (111)-oriented Ag₂O film deposited using direct-current reactive magnetron sputtering is annealed using different annealing temperatures (T_a) for 1 h in Ar and H₂ mixture. After hydrogen annealing, a very weak but clear Ag(200) diffraction peak begins to appear, and the Ag₂O diffraction peak weakens at T_a = 175 °C. However, the Ag diffraction peak becomes discernable at T_a = 190 °C. No Ag₂O diffraction peaks but rather Ag diffraction peaks are discerned at T_a = 200 °C. The hydrogen reduction effect can reduce the film's critical thermal decomposition temperature to 175 °C. After hydrogen annealing, the surface of the film evolutes from compact and uniform to osteoporosis, and then to a porous structure. Moreover, the optical properties of the film obviously change at T_a over 190 °C, indicating that the hydrogen reduction can significantly enhance the decomposition of Ag₂O due to H₂ dissociation on the surface followed by gaseous H₂O molecule formation and desorption.     

Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar

SiO₂-like thin films were deposited at a low temperature (< 50 °C) by a remote-type, atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) using a pin-to-plate-type, dielectric barrier discharge with gas mixtures containing hexamethyldisilazane (HMDS)/O₂/He/Ar. The film characteristics were investigated according to the HMDS and O₂ flow rates. To obtain a more SiO₂-like thin film, an adequate combination of HMDS and oxygen flow rates was required to remove the -(CH₃)_x bonding in the HMDS and to oxidize the Si in HMDS effectively. At the optimized flow rates, the surface roughness of the SiO₂-like thin film was also the lowest. By using HMDS (50 sccm) and O₂ (500 sccm) flow rates in the gas mixture of HMDS/O₂/He (2 slm)/Ar (600 sccm), SiO₂-like thin films with a low impurity (< 6.35% C) were obtained at a deposition rate of approximately 10.7 nm/min.     

A novel compound with the formula Cd2InVO6

As a result of a solid-state reaction, a compound with the formula Cd₂InVO₆ has been obtained for the first time. This compound melts congruently at 1050 ± 10 °C. It crystallises in the monoclinic system and the unit cell parameters are: a = 0.7964(2) nm, b = 1.1311(3) nm, c = 0.6001(1) nm, γ = 104.1°, Z = 4.