Catalyst-free ZnO nanowires grown on a-plane GaN

ZnO nanowires were grown on a-plane GaN templates by chemical vapor deposition (CVD) without employing a catalyst. The a-plane GaN templates were pre-deposited on an r-plane sapphire substrate by metal-organic CVD. The resulting ZnO nanowires grow in angles off- related to the GaN basal plane. X-ray diffraction (XRD) spectra showed that the ZnO layer was grown with a heteroepitaxial relationship of (110)_ZnO||(110)_GaN. Photoluminescence spectra measured at 17 K exhibited near-band-edge emission at 372 nm with a full width at half maximum of 10 nm. The growth mechanism on a-GaN was the Volmer-Weber (VW) mode and differed from the Stranski-Krastanow (SK) mode observed for growth on c-GaN. This difference results from the higher interfacial free-energy on the a-plane between ZnO and GaN than that on the c-plane orientation.     

Morphology-controlled one-dimensional ZnO nanostructures with customized Ga-doping

Enhanced functionality of the nanostructure-based devices can be achieved by customizing the doping, thereby managing the electrical properties of the nanostructures. We have optimized the synthesis condition of the ZnO nanowires (NWs) using hot-walled pulsed laser deposition (HW-PLD) that features the facilitated kinetic energy control of the laser-ablated particles. The electrical properties of the NWs have been managed by doping control while maintaining the NW morphologies. 1, 3, and 5 wt.% Ga concentration in the NWs is evaluated directly with energy dispersive spectrometer (EDS), and the exciton peak shifts are measured with room temperature photoluminescence (PL) to find the correlation between the concentration and the shifts. n-type Ga-doping status has been verified with low temperature PL to find the donor-bound exciton peaks. As for the morphology diversification, we have acquired both zigzag-shaped NWs and nanohorns using the same HW-PLD.     

Growth of ZnO nanowires on nonwoven polyethylene fibers

Abstract

We report the growth of ZnO nanowires on nonwoven polyethylene fibers using a simple hydrothermal method at a temperature below the boiling point of water. The ZnO nanowires were grown from seed ZnO nanoparticles affixed onto the fibers. The seed ZnO nanoparticles, with diameters of about 6–7 nm, were synthesized in isopropanol by reducing zinc acetate hydrate with sodium hydroxide. The growth process was carried out in a sealed chemical bath containing an equimolar solution of zinc nitrate hexahydrate and hexamethylene tetramine at a temperature of 95 °C over a period of up to 20 h. The thickness and length of the nanowires can be controlled by using different concentrations of the starting reactants and growth durations. A 0.5 mM chemical bath yielded nanowires with an average diameter of around 50 nm, while a 25 mM bath resulted in wires with a thickness of up to about 1 μm. The length of the wires depends both on the concentration of the precursor solution as well as the growth duration, and in 20 h, nanowires as long as 10 μm can be grown. The nonwoven mesh of polyethylene fibers covered with ZnO nanowires can be used for novel applications such as water treatment by degrading pollutants by photocatalysis. Photocatalysis tests carried out on standard test contaminants revealed that the polyethylene fibers with ZnO nanowires grown on them could accelerate the photocatalytic degradation process by a factor of 3.     

Sn催化的Ga掺杂ZnO纳米线的制备及其光致发光性能研究

采用化学气相沉积的方法,以Sn粉为催化剂制备出大长径比的Ga掺杂ZnO纳米线。采用扫描电子显微镜观察制备的产物,发现样品为直径约25～90nm的纳米线。通过比较不同Ga掺杂含量样品的室温光致发光谱,发现一定掺杂含量的Ga可以提高ZnO纳米线的紫外发光强度,同时,Ga的掺杂也会引起ZnO紫外发光峰的蓝移。随着Ga含量的增加,蓝移程度越来越小,甚至发生红移。Sn的引入只对Ga掺杂ZnO纳米线的蓝绿光有贡献。     

Ni掺杂对ZnO纳米线甲烷气敏性能的影响

以采用物理热蒸发法制备的纯ZnO纳米线和Ni掺杂ZnO纳米线为气敏基料，制备成旁热式气敏元件，用静态配气法对浓度为10^-4的甲烷气体进行了气敏性能的测试．结果表明Ni掺杂使ZnO纳米线对甲烷灵敏度提高了182％，响应时间和恢复时间分别缩短了3和2s．Ni的掺杂，在ZnO半导体禁带中引入新的复合中心，形成附加能级，提高了ZnO纳米线对甲烷的灵敏度．     

氧化锌纳米线尿酸氧化酶固定性能

本文利用石英晶体微天平研究了氧化锌纳米线对尿酸氧化酶的固定性能和作为尿酸传感器的应用.本文在PBS溶液中对尿酸氧化酶进行固定,并且利用固定的传感器作为尿酸传感器,能检测浓度范围从5.0 × 10-6到8×10-5 molL-1的尿酸含量,所有结果都说明氧化锌纳米线是一种很好的生物传感器的材料.     

Silica-coated ZnO nanowires

ZnO-core/SiO_x shell nanowires were successfully fabricated and their morphology, structure, Raman and photoluminescence properties were examined. Not only the sputter-coated product had an one-dimensional morphology, but the tubular structure of SiO_x shell was also continuous, smooth, and uniform, along the core nanowires. It was found that two fundamental modes (334, 437 cm⁻¹) and 2 s order modes (1106, 1156 cm⁻¹) of hexagonal ZnO appeared in the Raman spectrum of ZnO-core/SiO_x shell nanowires. The photoluminescence (PL) spectrum of the core-shell nanowires were deconvoluted into three Gassian functions, centered at 382, 500, and 758 nm, whether the subsequent thermal annealing was performed or not. The integrated intensities of UV (382 nm) and green (758 nm) emissions were changed by means of the shell-coating and thermal annealing. We have discussed the possible emission mechanisms.     

低维结构策略构筑基于钙钛矿纳米片/氧化锌纳米线的柔性宽光谱探测器（英文）

柔性光电探测器具有轻便、易携带和优异的大面积兼容性等特点,在下一代光电子器件领域具有巨大的应用潜力.柔性光电探测器面临的主要挑战是在反复弯曲、拉伸、折叠等形变状态下难以保持优异的性能.本文通过低维度结构策略构筑了基于CsPbBr3纳米片和ZnO纳米线的柔性光电探测器.得益于一维纳米线和二维纳米片的高柔性,所构筑的光电探测器在各种应力下表现出优异的工作稳定性.例如,在弯曲1000次之后,器件的性能没有明显变化.此外,由于ZnO和CsPbBr3自身的光吸收特性,所构筑的柔性光电探测器展现出宽光谱光电响应能力(涵盖紫外和可见波段).在紫外和可见区域的峰值响应度分别为3.10和0.97 A W^-1,其相应的探测率分别为5.57×10^12和1.71×10^12Jones.本文针对柔性、高性能集成光电探测器提出的维度构筑策略,在未来智能、可穿戴光电子器件领域有着巨大的应用前景.     

基于氧化锌纳米线表面传导场发射阴极的研究

利用热蒸发和丝网印刷技术在玻璃基底上成功制备了氧化锌纳米线表面传导场发射阴极阵列,并测试其场发射性能。扫描电镜表明,在氩气和氧气流量分别为60和1mL/min,反应温度550℃保温30min条件下制备的氧化锌纳米线均匀垂直生长在玻璃基底上,直径大约在80～200nm,长度〉7μm。场发射测试表明,在阳压2000V和阴阳间距为500μm时,ZnO纳米线表面传导场发射阴极的开启电压为70V;在栅压为96V时,电子发射效率为26.2%,高于传统报道的表面传导电子发射器件,在经过80min的老练后发射接近稳定,平均发射电流接近135μA,表明ZnO纳米线表面传导场发射阴极有着稳定高效的场发射性能。     

Flexible piezoelectric nanogenerators based on a fiber/ZnO nanowires/paper hybrid structure for energy harvesting

We present a novel, low-cost approach to fabricate flexible piezoelectric nano- generators （NGs） consisting of ZnO nanowires （NWs） on carbon fibers and foldable Au-coated ZnO NWs on paper. By using such designed structure of the NGs, the radial ZnO NWs on a cylindrical fiber can be utilized fully and the electrical output of the NG is improved. The electrical output behavior of the NGs can be optionally controlled by increasing the fiber number, adjusting the strain rate and connection modes. For the single-fiber based NGs, the output voltage is 17 mV and the current density is about 0.09 μA·cm^-2, and the electrical output is enhanced greatly compared to that of previous similar micro-fiber based NGs. Compared with the single-fiber based NGs, the output current of the multi-fiber based NGs made of 200 carbon fibers increased 100-fold. An output voltage of 18 mV and current of 35 nA are generated from the multi-fiber based NGs. The electrical energy generated by the NGs is enough to power a practical device. The developed novel NGs can be used for smart textile structures, wearable and self-powered nanodevices.     

Hydrothermal growth of ZnO nanostructures

Abstract

One-dimensional nanostructures exhibit interesting electronic and optical properties due to their low dimensionality leading to quantum confinement effects. ZnO has received lot of attention as a nanostructured material because of unique properties rendering it suitable for various applications. Amongst the different methods of synthesis of ZnO nanostructures, the hydrothermal method is attractive for its simplicity and environment friendly conditions. This review summarizes the conditions leading to the growth of different ZnO nanostructures using hydrothermal technique. Doping of ZnO nanostructures through hydrothermal method are also highlighted.     

Hydrothermal growth of ZnO nanostructures

One-dimensional nanostructures exhibit interesting electronic and optical properties due to their low dimensionality leading to quantum confinement effects. ZnO has received lot of attention as a nanostructured material because of unique properties rendering it suitable for various applications. Amongst the different methods of synthesis of ZnO nanostructures, the hydrothermal method is attractive for its simplicity and environment friendly conditions. This review summarizes the conditions leading to the growth of different ZnO nanostructures using hydrothermal technique. Doping of ZnO nanostructures through hydrothermal method are also highlighted.     

ZnO纳米锥光致发光性及印刷ZnO纳米锥场发射性能研究

利用物理热蒸发法制备大规模的蒲公英状的ZnO纳米锥,利用荧光光谱仪对ZnO纳米锥进行了光致发光性能测试.针对现有的丝网印刷碳纳米管(CNTs)薄膜需要各种后处理工艺后才能改善其场发射特性的问题,提出了一种不需任何后处理丝网印刷ZnO纳米锥的浆料配制工艺.用该工艺制备的丝网印刷ZnO纳米锥的场发射特性测试表明,ZnO纳米锥与制浆剂质量比为3∶5的薄膜的开启场强最低为2.25V/μm(电流密度为1μA/cm2),在4.6V/μm场强下,阳极荧光粉的发光点亮度高且分布均匀.说明该方法成本低,工艺简单,无需任何后处理,在ZnO纳米锥场发射显示器的制作中有很好的实际应用价值.     

Morphological control of flower-like ZnO nanostructures

Flower-like ZnO nanostructures composed of different building blocks, such as hexagonal pyramids, hexagonal prisms, and cones, have been synthesized on a large scale by a simple hydrothermal method in the absence of surfactants or organic solvents. The effects of the concentration of NaOH, reaction temperature, and reaction time on the morphologies of the resulting products have been investigated. The morphologies and the crystal structures of flower-like ZnO nanostructures were characterized by X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM).     

离子络合法制备ZnO纳米线

通过高聚物PAM与锌盐发生离子络合反应 ,将络合溶液涂膜在单晶硅片上 ,再通过烧结使之生长出ZnO纳米线。用场发射扫描电子显微镜 (FE SEM )、X射线衍射 (XRD)、红外光谱 (IR)对所得样品的结构与形貌进行分析表征 ,结果表明ZnO纳米线直径约 6 0～ 80nm、长度约 1～ 2 μm ,单晶 ,为六方晶系 ,且沿c轴方向优先生长。     

导电聚合物纳米线的制备及气敏性能研究

首次采用简单的浸润多孔氧化铝(AAO)模板法制备了导电聚合物聚-3,4-乙烯二氧噻吩(PE-DOT)纳米线.导电聚合物溶液浸润AAO模板后,PEDOT吸附于孔道壁并进一步聚合生成导电聚合物纳米线.紫外-可见光-近红外光谱(UV-vis-NIR spec-trum)分析表明生成的纳米线处于掺杂态.采用四探针仪分析了导电聚合物纳米线的导电性能,结果显示纳米线电导率相比普通PEDOT材料有数量级增加,且表现出良好的掺杂/脱掺杂能力.研究了导电聚合物纳米线的气体敏感性能,发现其对挥发性醇类,尤其对甲醇在较低浓度下表现出优异的敏感性,对5×10-6甲醇气体的响应时间约为10～20s,测试可重复性超过20次,达到饱和吸附时的气体浓度明显大于普通PEDOT材料.表明PEDOT纳米线不仅提供了较大表面积供气体分子吸附,而且纳米线中导电通道取向一致,从而体现出较好的气体敏感性能.     

Hybrid p-type ZnO film and n-type ZnO nanorod p-n homo-junction for efficient photovoltaic applications

Simple hybrid p-n homo-junctions using p-type ZnO thin films and n-type nanorods grown on fluorine tin oxide (FTO) substrates for photovoltaic applications are described. The ZnO nanorods (1.5 μm) were synthesized via an aqueous solution method with zinc nitrate hexahydrate and hexamethylenetetramine on ZnO seed layers. The 10-nm-thick ZnO seed layers showed n-type conductivity on FTO substrates and were deposited with a sputtering-based method. After synthesizing ZnO nanorods, aluminum-nitride co-doped p-type ZnO films (200 nm) were efficiently grown using pre-activated nitrogen (N) plasma sources with an inductively-coupled dual-target co-sputtering system. The structural and electrical properties of hybrid p-n homo-junctions were investigated by scanning electron microscopy, transmittance spectrophotometry, and I-V measurements.     

Growth of ZnO nanowires on a patterned Au substrate

ZnO nanowires were site-selectively deposited on the catalytic gold-patterned substrates using a vapor transport process at low temperature. We observed that Au-Zn phase played an important role in initiating the ZnO nucleation, which was identified from the TEM observation of the interface between the substrate and ZnO nanowires. And then further growth of the nanowires on the ZnO surface was driven by the reaction of the Zn vapor and O₂ gas in vapor-solid growth mode. Finally, it was concluded that the site-specific deposition of ZnO nanowires was ascribed to the vapor-liquid-solid mechanism of Au, Zn vapor, and Au-Zn phases at the initial stage of ZnO nucleation.     

ZnO nanostructures grown on epitaxial GaN

Presented is the growth of zinc oxide nanorod/nanowire arrays on gallium nitride epitaxial layers. A hierarchical zinc oxide morphology comprising of different scale zinc oxide nanostructures was observed. The first tier of the surface comprised of typical zinc oxide nanorods, with most bridging to adjacent nanorods. While the second tier comprised of smaller zinc oxide nanowires approximately 30 nm in width often growing atop the aforementioned bridges. Samples were analysed via scanning electron microscopy, as well as, cross-sectional and high resolution transmission electron microscopy to elucidate the detailed growth and structural elements of the heterostructure.     

ZnO纳米线的制备及其光学性能

采用物理热蒸发ZnS粉的方法,制备出了大规模的线状和棒状ZnO纳米结构.借助扫描电子显微镜、透射电子显微镜、激光拉曼光谱仪以及荧光光谱仪研究了ZnO纳米线的表面形貌、内部结构及其光学性能.结果表明,所得到的ZnO纳米线是六方的单晶结构,而且具有较好的发光性能和良好的结晶性.纳米线长约2～5μm,直径约60nm,其生长机制为气-固(VS)机制.