Growth of long aligned carbon nanotubes on amorphous hydrogenated silicon nitride by thermal chemical vapor deposition

Vertically aligned long carbon nanotubes in the range of 80-100 µm have been synthesized on amorphous hydrogenated silicon nitride (a-SiN_x:H) coated silicon substrate by thermal chemical vapor deposition of ferrocene and xylene. It is observed that high temperature annealing in oxygen ambient results in formation of crystalline silicon dioxide in the matrix of amorphous silicon nitride due to out diffusion of hydrogen. It is suggested that active sites created on silicon dioxide and a-SiN_x:H clusters provide mechanical support for the alignment of long carbon nanotubes. It is proposed that a thin layer of a-SiN_x:H prevents silicide formation between the catalyst (Fe) and silicon thus lengthening the catalyst life.     

Multi-walled carbon nanotube growth on oxidized silicon substrates using cyclohexane precursor by chemical vapor deposition

Randomly oriented multi-walled nanotubes (MWNTs) are grown by a thermal chemical vapor deposition (CVD) process from cyclohexane precursor on a 20% copper-80% nickel (Cu-Ni) catalyst on oxidized silicon substrates. This combination of precursor and catalyst, to our knowledge, has been employed for the first time to demonstrate growth of multi-walled carbon nanotubes. The effects of annealing, gas ambient and catalyst layer thickness on the morphology of the grown carbon layers are discussed. The low resistivity values of the MWNTs grown on oxidized silicon substrates are attractive for their potential use in photonic devices and display applications.     

The growth of carbon nanotubes on large areas of silicon substrate using commercial iron oxide nanoparticles as a catalyst

A new approach to chemical vapour deposition (CVD) growth of carbon nanotubes (CNTs) using commercial magnetite nanoparticles, avoiding its in situ synthesis, is reported. Commercial magnetite nanoparticles were used as catalyst material to growth multiwalled carbon nanotubes by chemical vapour deposition onto a silicon substrate of several square centimeters in area. It is shown that the application of an alternating electric field during the deposition of catalytical nanoparticles is an effective technique to avoid their agglomeration allowing nanotube growth. Scanning electron microscopy showed that the nanotubes grow perpendicularly to the substrate and formed an aligned nanotubes array. The array density can be controlled by modifying the deposited nanoparticle concentration.     

Diameter dependent growth mode of carbon nanotubes on nanoporous SiO2 substrates

Two different growth modes of carbon nanotubes (CNTs) are identified in ethylene chemical vapour deposition (CVD) using SiO₂ as support. With a series of electron microscopy observations, we have found that small-diameter nanotubes favor a root-growth mechanism on nanoporous SiO₂ support, while nanotubes with larger diameters prefer a tip-growth. The dependence of growth mode on tube diameter is explained in terms of the porosity of the support and the size distribution of the catalyst. Our results provide clues to control growth of CNTs and obtain well-organized nanotube structures.     

Electrical characterization of CVD diamond thin films grown on silicon substrates

Diamond thin films grown on high resistivity, 100 oriented silicon substrates by the hot filament chemical vapor deposition (HFCVD) method have been characterized by four-point probe and current-voltage (through film) techniques. The resistivities of the as-grown, chemically etched and annealed samples lie in the range of 10² Ω cm to 10⁸ Ω cm. The Raman measurements on these samples indicate sp³ bonding with a sharp peak at 1332 cm⁻¹. The surface morphology as determined by scanning electron microscope shows polycrystalline films with (100) or (111) faceted structures with average grain size of ≈2.5 μm. The through film current-voltage characteristics obtained via indium contacts on these diamond films showed either rectifying or ohmic behavior. The difference in Schottky and ohmic behavior is explained on the basis of the high or low sheet resistivities measured by four-point probe technique. 5% methane to hydrogen concentration during film growth resulted in poor surface morphology, absence of sp³ bonds, and low resistivity.     

Carbon nanotubes initiate the explosion of porous silicon

Here we show that a mixture of multi-walled carbon nanotubes (MWCNTs) and ferrocene doped with sodium perchlorate, as an oxidant, can be combusted using a camera flash as an initiator. We optimize the MWCNT to oxidant ratio by monitoring the intensity and spectral characteristics of the light emission. In addition, we construct a novel nanostructured energetic material combining MWCNTs with porous silicon (pSi) impregnated with sodium perchlorate and show that pSi can be exploded using carbon nanotubes as photosensitive initiators.     

Massive stress changes in plasma-enhanced chemical vapor deposited silicon nitride films on thermal cycling

Massive irreversible increases in tensile stress (up to 2 GPa) on thermal cycling are demonstrated for plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films. Results give further evidence for the claim that this phenomenon is generic to PECVD films and is attributable to the removal of bonded hydrogen: the magnitude of stress increase is independent of the film stress and can be accounted for with a calculation involving the amount of evolved hydrogen. The massive stress changes cause film fracture in most of the films discussed here, with a large diversity of fracture behavior exhibited. The effects of deposition conditions (temperature, plasma frequency, substrate) on film modulus, hardness and coefficient of thermal expansion, as well as stress and stress hysteresis are also examined.     

Synthesis and optical characterization of amorphous carbon nitride thin films by hot filament assisted RF plasma CVD

Carbon nitride thin films were synthesized by hot filament assisted radio frequency plasma chemical vapour deposition using methane and nitrogen gas mixture on silicon and glass substrates. The films were deposited at different substrate bias and at different substrate temperatures. At higher substrate bias (>−120 V) there was no deposition on the substrate, but complete etching of the deposited layer was observed. X-ray diffraction studies indicated the films were amorphous. The Fourier transform infrared spectra showed that the films produced exhibited high transmittance with the presence of the C-N stretching band at 1260 cm⁻¹. For the films deposited at a lower substrate temperature C=N peaks were also present. Raman spectroscopic study indicated the presence of D and G peaks whose relative height varied with substrate temperature. The transmittance versus wavelength measurement in the UV-VIS-NIR region showed the high transmittance in the NIR region. The optical band gap of the films was calculated to be 2.0 eV and the refractive index varied within 1.6-1.7 for the wavelength range 800-1800 nm.     

炭纤维表面生长碳纳米管

采用化学气相沉积工艺在炭纤维表面生长了碳纳米管,并观察了它的微观形貌,且对其影响因素进行了初步研究.结果表明:纤维表面的纵向沟槽可以负载催化剂粒子,是生长碳纳米管的物理基础;催化剂的浓度太高,金属粒子容易团聚长大,所得碳纳米管的管径较大;而催化剂浓度太低,则不能在炭纤维整个表面均匀生长碳纳米管;最佳的催化剂溶液的浓度是0.05mol/L的硝酸钴.比较了铁、钴、镍三种过渡金属催化剂,从形成的碳纳米管的质量来看,钴催化剂最佳.     

Carbon nanotube forest growth on NiTi shape memory alloy thin films for thermal actuation

Actuation frequencies in thermally triggered Shape Memory Alloy (SMA) thin films are limited by the slow heat transport into/out of the films. Carbon Nanotubes (CNTs) are known to exhibit an exceptionally high thermal conductivity. Thus, we propose to thermally contact SMA films with CNTs to increase SMA actuation frequencies by enhanced heat transport through the CNTs. The basic requirement for this envisaged nanotube application is to obtain CNT forest growth on a SMA material while retaining a reversible martensitic transformation, as required for Shape Memory Effect exploitation. We show how such growth can be achieved on thin films of the SMA material NiTi. Future work is needed to measure thermal properties and obtainable cycling frequencies of CNT-SMA structures.     

Multi-scale electrical response of silicon nitride/multi-walled carbon nanotubes composites

Dense silicon nitride (Si₃N₄) composites with various amounts (0-8.6 vol%) of multi-walled carbon nanotubes (MWCNTs) are electrically characterised by combining macroscopic dc-ac and nanoscale conductive scanning force microscopy (C-SFM) measurements. In this way, a coherent picture of the dominant charge transport mechanisms in Si₃N₄/MWCNTs composites is presented. A raise of more than 10 orders of magnitude in the electrical dc conductivity compared to the blank specimen is measured for MWCNTs contents above 0.9 vol%. Semiconductor and metallic-like behaviours are observed depending on both the temperature and the MWCNTs content. Macroscopic measurements are further supported at the nanoscale by means of C-SFM. The metallic-type conduction is associated to charge transporting along the nanotube shells, whereas the semiconductor behaviour is linked to hopping conduction across nanotube-nanotube contacts and across intrinsic defect clusters within the nanotubes.     

Chemical vapour deposition of zirconium carbide and silicon carbide hybrid whiskers

Zirconium carbide and silicon carbide hybrid whiskers were codeposited by chemical vapour deposition using methyl trichlorosilane, zirconium chloride, methane and hydrogen as the precursors. The zirconium carbide and silicon carbide whiskers were characterized by scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction. The results indicate that the codeposition process is more effective in the presence of methane than in the absence of methane. The codeposition process and the growth of zirconium carbide in the whiskers can be accelerated at high temperature in the presence of methane. A growth model was proposed based on the deposition model of carbon, zirconium carbide and silicon carbide.     

以生物质为催化剂化学气相沉积制备碳纳米管

以富含过渡金属元素铁的天然生物质黑木耳、紫菜、香菇、黑芝麻的炭化粉末作为催化剂前驱体,天然气为碳源,采用化学气相沉积工艺制备了碳纳米管(CNTs)。所制CNTs阵列的管径较窄,排列整齐,归因于蘑菇、紫菜和黑芝蔴的碳含量高及铁基纳米颗粒分散均匀。采用黑木耳为催化剂所制CNTs的直径也较窄,但杂乱生长,可能是由于黑木耳的碳含量低及铁基纳米颗粒分布不均匀所致。     

热化学气相沉积法在硅纳米丝上合成碳纳米管

利用热化学气相沉积法在负载不同厚度催化剂的硅纳米丝(SiNW)表面生长碳纳米管(CNTs),探讨了生长条件对所合成SiNW-CNT的结构和场发射特性的影响.这种类似树状的三维结构具有较高碳纳米管表面密度及降低的电场筛除效应等潜在优势.使用拉曼光谱( Raman)、电子显微镜(SEM)、透射电子显微镜(TEM)、能量扩散分光仪(EDS)分析了碳纳米管的结构性质,并在高真空下施加电场测得碳纳米管的场发射特性.结果表明:随硅纳米丝上负载催化剂镍膜厚度的变化,所合成碳纳米管的表面特性、结晶结构及功函数改变,导致电子发射难易程度的改变,进一步影响碳纳米管的场发射特性.     

金属基底上定向碳纳米管阵列的生长及其场发射性质

在金属基底上,以铁为催化剂,硅做过镀层,乙烯为源气体,通过普通的化学气相沉积方法生长出垂直基底排列的碳纳米管(CNT)阵列.扫描电子显微镜和透射电镜观察表明,生长的CNT具有阵列形貌和多缺陷的结构.对CNT阵列的场发射性质进行了测量,在10 μA/cm2时不锈钢和镍基底上的开启电场分别为1.25 V/μm 和1.57 V/μm.     

Facile synthesis of boron nitride coating on carbon nanotubes

Boron nitride (BN) coating on the surface of carbon nanotubes (CNTs) was synthesized by the direct reaction of NaBH₄ and NH₄Cl in the temperature range of 500–600 °C. X-ray diffraction, field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) confirm the formation of BN coating. It is revealed that the BN coating follows the shape of CNTS without damaging the surface of CNTs, and the elements B and N distribute homogenously along the whole CNTs without chemical bonds between carbon and BN layers. Besides, the oxidation resistance of the CNTs improved a lot after being coated with BN.     

Visible electroluminescence from silicon nanoclusters embedded in chlorinated silicon nitride thin films

Visible electroluminescence (EL) has been obtained from devices with active layers of silicon nanocrystals embedded in chlorinated silicon nitride (Si-nc/SiN_x:Cl) thin films, deposited by remote plasma enhanced chemical vapour deposition, using SiCl₄/NH₃/H₂/Ar. The active nc-Si/SiN_x:Cl film was sandwiched between Al contacts and a transparent conductive contact of ZnO_x:Al deposited by the pyrosol process. White EL centred at around 600 nm was observed, with a turn-on voltage of 5 V, and the intensity increasing as a function of voltage. Recombination between electron-hole pairs generated in the Si-nc by electron impact ionization is proposed as the EL mechanism.     

Electrochemical utilisation of chemical vapour deposition grown carbon nanotubes as sensors

We overview recent developments in the fabrication of the world’s smallest electrode, the carbon nanotube via chemical vapour deposition (CVD) and demonstrate how these electrodes are beneficially utilised and tailored towards the electrochemical sensing of target analytes. The use of carbon nanotubes arrays grown via CVD to beneficially tailor the arrays to their intended electro-analytical application is also highlighted.     

化学气相沉积法快速生长定向纳米碳管

利用化学气相沉积法，采用二甲苯为碳源，二茂铁为催化剂，氮气作保护气，在石英基底上催化裂解生长定向纳米碳管，试验结果表明：在775℃，120min的条件下，可生长出长达200μm厚的定向纳米碳管薄膜；在775℃，反应时间为60min～120min时，纳米碳管的长度为100μm～200μm，而纳米碳管的直径变化不明显。而无氢气，较高的反应温度和连续的催化剂供给对快速生长定向纳米碳管有重要的影响。