一种新的红外热像图分析方法及其在乳腺肿瘤诊断中的应用

本文基于热断层的思想,提出了用于分析人体内热源信息的一种新的热像图分析方法。通过建立有内热源的热传导微分方程,得出方程的解。再结合实际,应用叠加原理将体表的正常体温和异常热源的温度叠加起来,得出了有内热源的体表温度分布表达式,利用该表达式对红外热像图上可能的病变区域的温度数据进行了分析处理。处理过程中选择了两个参考变量:热源的深度h和热源的发热强度q。深度h对应于肿瘤解剖位置的深度,发热强度q对应于肿瘤的性质:良、恶性的判断。临床病例证明,这两个参数对肿瘤的定性、定位是很有效的。     

体内异常热源参数与体表温度关系的热像研究

人体内异常热源的位置信息在体表上表现为对应部位温度较高。体表温度可以通过医用红外热像仪摄取,这是诊断体内异常热源的方法之一。但是其摄取的体表温度分布并不能直接反应体内异常热源位置等信息,因此对热源深度、温度、热物性等参数与体表温度分布之间相互关系的研究是非常必要的。该文基于生物热传导方程,通过建立有限元模型,仿真分析了体内热源参数对体表温度分布的影响;将研制的温度可调的恒温热源埋于分层生物组织内,并以红外热像仪摄取各层生物组织的温度,给出体内、体表温度场的分布,对理论仿真结果进行实验验证。研究结果表明,体表温度分布与体内热源深度的关联性最大,为体内异常热源诊断的热像技术研究提供理论与实验依据。     

用Visual Basic编程语言开发的红外热像图分析软件

本文使用Visual Basic 6编程语言开发了用以分析由TVS-100型红外热像仪生成的热像图的分析软件。该软件具备热像图数据读取和多用途输出两大功能,在提高热像图处理能力的同时还摆脱了原有软件狗的使用限制,并节约了软件升级费用。     

晶体管红外热像图的热谱分析方法

使用自编的分析软件,根据比色法对所摄取的晶体管红外热像图进行了热谱分析,给出了晶体管发射区热谱和发射区一维温度分布曲线.一维温度分布曲线给出了整个发射区的结温分布情况,并可直接读取发射区的峰值结温和最低结温,还可以计算出平均结温.晶体管热谱是表示晶体管结温不均匀性的一种与热像图不同的新方法.     

红外热成像体内热源检测方法及仿真研究

医用红外热像技术是一种记录人体热场的影像装置,由其所形成的红外医学影像学专门研究生物医学传热及其医学应用.由于所成的红外热像是体表温度的分布图像,并不能直接反映体内热源的位置等相关信息,必须进一步确定体表温度分布与体内热源间的关系.以点热源为研究对象,考虑了组织在环境中的散热情况,推导出组织表面温度分布与内部异常热源深度和强度之间的关系式.根据有限元分析方法对组织传热的分析结果进行模拟计算,并通过数据拟合验证了该模型的适用性.     

一种能用的新型热像图处理系统

首先给出了一种通用的新型热像图处理系统－ＢＪＤ热像图处理系统的软件结构,功能,原理及其特点,并将该系统与其它热像图处理系统进行了比较,通过实例说明该系统在热像图处理方面功能丰富,具有通用性。     

人体热像诊断技术研究

本文介绍了人体体内的某些病症通过体表发射的红外辐射,由红外热像仪的显示器反映出体内细胞组织的温度变化,依据病患细胞细胞组织与其边沿细胞组织的温差数值及体内温度的对称性,能够对症症实行临床诊断,同时文中介绍了人体热像技术用于脉管炎的诊断方法。     

一种通用的新型热像图处理系统

首先给出了一种通用的新型热像图处理系统－ＢＪＤ热像图处理系统的软件结构、功能、原理及其特点，并将该系统与其它热像图处理系统进行了比较，通过实例说明该系统在热像图处理方面功能丰富，具有通用性。     

热像图对强直性脊柱炎的诊断价值

探讨了红外热像图对强直性脊柱炎(AS)的诊断价值.采用国产WP-95型医用红外热像扫描仪,对131例AS患者和100例正常人的红外热像图表现进行分析.结果表明,AS的脊背热像图自颈胸至腰骶呈温高色红的热区,宽度相当于两侧骶棘肌外缘间,平均1.7℃的连线,温度高于两侧温度1～2.9 ℃.可见用热像图诊断AS具有明显的临床意义.     

基于超声锁相热像技术检测缺陷的热图序列处理

超声锁相热像是以超声频振动做激励源并采用锁相方法对热图信号进行处理,得到热图序列的幅值和相位来判定缺陷的一种红外热像无损检测技术.它能够有效地检测各种材料内接触界面类缺陷.为了提高对缺陷的检测效率和探测能力,基于超声锁相热像技术,对采集的瞬态热图序列进行处理,采用时频分析方法提取瞬态热图序列的相位和幅值.研究固定分析窗宽(分析长度)时窗中心时刻(分析时刻)对检测结果的影响.采用超声红外锁相热像技术对A3钢板材微裂纹进行检测试验研究,结果表明,瞬态热图序列的时频分析方法能够准确检测金属板材的微裂纹缺陷.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.