Step and repeat UV nanoimprint lithography on pre-spin coated resist film: a promising route for fabricating nanodevices

A step and repeat UV nanoimprint lithography process on pre-spin coated resist film is demonstrated for patterning a large area with features sizes down to sub-15 nm. The high fidelity between the template and imprinted structures is verified with a difference in their line edge roughness of less than 0.5 nm (3σ deviation value). The imprinted pattern's residual layer is well controlled to allow direct pattern transfer from the resist into functional materials with very high resolution. The process is suitable for fabricating numerous nanodevices.     

Nanometer patterning with ice

Nanostructures can be patterned with focused electron or ion beams in thin, stable, conformal films of water ice grown on silicon. We use these patterns to reliably fabricate sub-20 nm wide metal lines and exceptionally well-defined, sub-10 nanometer beam-induced chemical surface transformations. We argue more generally that solid-phase condensed gases of low sublimation energy are ideal materials for nanoscale patterning, and water, quite remarkably, may be among the most useful.     

Hierarchical nanostructures by sequential self-assembly of styrene-dimethylsiloxane block copolymers of different periods

Poly(styrene-block-dimethylsiloxane) (PS-b-PDMS) block copolymers with a period as low as 13 nm have been self-assembled on a template formed from PS-b-PDMS of a 34–40 nm period, which is itself templated by micron-scale substrate features prepared using conventional lithography. This hierarchical process provides a simple method for directing the self-assembly of sub-10 nm features and registering them on the substrate.     

Deterministic Assembly of Single Sub-20 nm Functional Nanoparticles Using a Thermally Modified Template with a Scanning Nanoprobe

A deterministic assembly technique for single sub-20 nm functional nanoparticles is developed based on nanostructured templates fabricated by hot scanning nanoprobes. With this technique, single nanoparticles including quantum dots, polystyrene fluorescent nanobeads, and gold nanoparticles are successfully assembled into 2D arrays with high yields. Experimental and theoretical analyses show that the key for the high yields is the hot-probe-based template fabrication technique, which creates geometrical nanotraps and modifies their surface energy simultaneously. In addition to single nanoparticle patterning, further experiments demonstrate that this technique is also capable of building complex nanostructures, such as nanoparticle clusters with well-defined shapes and heterogeneously integrated nanostructures consisting of quantum dots and silver nanowires. It opens the door to many important applications.     

Chemical Vapor Deposition of Conformal,Functional, and Responsive Polymer Films

Chemical vapor deposition (CVD) polymerization utilizes the delivery of vapor‐phase monomers to form chemically well‐defined polymeric films directly on the surface of a substrate. CVD polymers are desirable as conformal surface modification layers exhibiting strong retention of organic functional groups, and, in some cases, are responsive to external stimuli. Traditional wet‐chemical chain‐ and step‐growth mechanisms guide the development of new heterogeneous CVD polymerization techniques. Commonality with inorganic CVD methods facilitates the fabrication of hybrid devices. CVD polymers bridge microfabrication technology with chemical, biological, and nanoparticle systems and assembly. Robust interfaces can be achieved through covalent grafting enabling high‐resolution (60 nm) patterning, even on flexible substrates. Utilizing only low‐energy input to drive selective chemistry, modest vacuum, and room‐temperature substrates, CVD polymerization is compatible with thermally sensitive substrates, such as paper, textiles, and plastics. CVD methods are particularly valuable for insoluble and infusible films, including fluoropolymers, electrically conductive polymers, and controllably crosslinked networks and for the potential to reduce environmental, health, and safety impacts associated with solvents. Quantitative models aid the development of large‐area and roll‐to‐roll CVD polymer reactors. Relevant background, fundamental principles, and selected applications are reviewed.     

Analysis of femtosecond laser surface patterning on bulk single-crystalline diamond

Preliminary work is reported on 2-D and 3-D microstructures written directly with a Yb:YAG 1026?nm femtosecond (fs) laser on bulk chemical vapour deposition (CVD) single-crystalline diamond. Smooth graphitic lines and other structures were written on the surface of a CVD diamond sample with a thickness of 0.7?mm under low laser fluences. This capability opens up the opportunity for making electronic devices and micro-electromechanical structures on diamond substrates. The fabrication process was optimised through testing a range of laser energies at a 100?kHz repetition rate with sub-500?fs pulses. These graphitic lines and structures have been characterised using optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy. Using these analysis techniques, the formation of sp² and sp³ bonds is explored and the ratio between sp² and sp³ bonds after fs laser patterning is quantified. We present the early findings from this study and characterise the relationship between the graphitic line formation and the different fs laser exposure conditions.     

Patterned self-assembly of gold nanoparticles on chemical templates fabricated by soft UV nanoimprint lithography

Chemical templates for the patterned immobilization of gold nanoparticles were fabricated by soft UV nanoimprint lithography. The template structures were fabricated by means of the consecutively performed process steps of nanoimprint lithography, reactive ion etching, chemical functionalization with amino groups, and lift-off of imprint resist. These chemical templates were used for the defined assembly of 20 nm diameter citrate stabilized gold nanoparticles from aqueous solution. By reducing the ionic strength of the solution, one- and zero-dimensional particle assemblies were generated on sub-100-nm template structures. By this means, the pattern resolution predefined by the lithography process could be easily enhanced by dilution of the nanoparticle solution.     

Plasmon-assisted chemical vapor deposition

We introduce a new chemical vapor deposition (CVD) process that can be used to selectively deposit materials of many different types. The technique makes use of the plasmon resonance in nanoscale metal structures to produce the local heating necessary to initiate deposition when illuminated by a focused low-power laser. We demonstrate the technique, which we refer to as plasmon-assisted CVD (PACVD), by patterning the spatial deposition of PbO and TiO(2) on glass substrates coated with a dispersion of 23 nm gold particles. The morphology of both oxide deposits is consistent with local laser-induced heating of the gold particles by more than 150 degrees C. We show that temperature changes of this magnitude are consistent with our analysis of the heat-loss mechanisms. The technique is general and can be used to spatially control the deposition of virtually any material for which a CVD process exists.     

Controllable Fabrication of Highly Uniform Sub-10 nm Nanoparticles from Spontaneous Confined Nanoemulsification

Sub-10 nm nanoparticles are known to exhibit extraordinary size-dependent properties for wide applications. Many approaches have been developed for synthesizing sub-10 nm inorganic nanoparticles, but the fabrication of sub-10 nm polymeric nanoparticles is still challenging. Here, a scalable, spontaneous confined nanoemulsification strategy that produces uniform sub-10 nm nanodroplets for template synthesis of sub-10 nm polymeric nanoparticles is proposed. This strategy introduces a high-concentration interfacial reaction to create overpopulated surfactants that are insoluble at the droplet surface. These overpopulated surfactants act as barriers, resulting in highly accumulated surfactants inside the droplet via a confined reaction. These surfactants exhibit significantly changed packing geometry, solubility, and interfacial activity to enhance the molecular-level impact on interfacial instability for creating sub-10 nm nanoemulsions via self-burst nanoemulsification. Using the nanodroplets as templates, the fabrication of uniform sub-10 nm polymeric nanoparticles, as small as 3.5 nm, made from biocompatible polymers and capable of efficient drug encapsulation is demonstrated. This work opens up brand-new opportunities to easily create sub-10 nm nanoemulsions and advanced ultrasmall functional nanoparticles.     

High aspect subdiffraction-limit photolithography via a silver superlens

Photolithography is the technology of choice for mass patterning in semiconductor and data storage industries. Superlenses have demonstrated the capability of subdiffraction-limit imaging and been envisioned as a promising technology for potential nanophotolithography. Unfortunately, subdiffraction-limit patterns generated by current superlenses exhibited poor profile depth far below the requirement for photolithography. Here, we report an experimental demonstration of sub-50 nm resolution nanophotolithography via a smooth silver superlens with a high aspect profile of ~45 nm, as well as grayscale subdiffraction-limit three-dimensional nanopatterning. Theoretical analysis and simulation show that smooth interfaces play a critical role. Superlens-based lithography can be integrated with conventional UV photolithography systems to endow them with the capability of nanophotolithography, which could provide a cost-effective approach for large scale and rapid nanopatterning.     

Aligned nanowires and nanodots by directed block copolymer assembly

The directed self-assembly of block copolymers (BCPs) is a promising route to generate highly ordered arrays of sub-10 nm features. Ultradense arrays of a monolayer of spherical microdomains or cylindrical microdomains oriented parallel to the surface have been produced where the lateral ordering is guided by surface patterning and the lattice defined by the patterning can be commensurate or incommensurate with the natural period of the BCP. Commensurability between the two can be used to elegantly manipulate the lateral ordering and orientation of the BCP microdomains so as to form well-aligned arrays of 1D nanowires or 2D addressable nanodots. No modification of the substrate surface, aside from the patterning, was used, making the influence of lattice mismatch and pattern amplification on the size, shape and pitch of the BCP microdomains more transparent. A skew angle between incommensurate lattices, defining a stretching or compression of the BCP chains to compensate for the lattice mismatch, is presented.     

Fabrication of silicon nanowire for detecting p-amyloid (1-42) by nanoimprint lithography

Ultraviolet nanoimprint lithography (UV-NIL) is a high volume and cost-effective patterning technique with sub-10 nm resolution. It has great potential as a candidate for next generation lithography. Using UV-NIL, nanowire patterns were successfully fabricated on a four-inch silicon-on-insulator (SOI) wafer under moderate conditions. The fabricated nanowire patterns were characterized by FE-SEM. Its electrical properties were confirmed by semiconductor parameter analysis. Monoclonal antibodies against beta-amyloid (1-42) were immobilized on the silicon nanowire using a chemical linker. Using this fabricated silicon nanowire device, beta-amyloid (1-42) levels of 1 pM to 100 nM were successfully determined from conductance versus time characteristics. Consequently, the nanopatterned SOI nanowire device can be applied to bioplatforms for the detection of proteins.     

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

Lithography and patterning on a nanometre scale with extreme ultraviolet (EUV) and soft X-ray radiation allow creation of high resolution, high density patterns independent of a substrate type. To realize the full potential of this method, especially for EUV proximity printing and interference lithography, a reliable technology for manufacturing of the transmission masks and gratings should be available. In this paper we present a development of broadband amplitude transmission masks and gratings for extreme ultraviolet and soft X-ray lithography based on free-standing niobium membranes. In comparison with a standard silicon nitride based technology the transmission masks demonstrate high contrast not only for in-band EUV (13.5 nm) radiation but also for wavelengths below Si L-absorption edge (12.4 nm).The masks and filters with free standing areas up to 1000 × 1000 μm² and 100 nm to 300 nm membrane thicknesses are shown. Electron beam structuring of an absorber layer with dense line and dot patterns with sub-50 nm structures is demonstrated. Diffractive and filtering properties of obtained structures are examined with EUV radiation from a gas discharge plasma source.     

Fullerene-incorporation for enhancing the electron beam resist performance for contact hole patterning and filling

The fullerene molecules such as C60 and C70 were incorporated in the commercial positive electron beam resist to investigate the performances for patterning and filling the contact holes at nanometer scale. The sensitivity, process window and contrast of the modified resist were improved, while the toluene dilution degraded the sensitivity. The electron beam dose affected the designed holes dimension, and the adulterated resist could print sub-50 nm holes pattern. We found the small amount (0.01–0.02% w/v) of fullerene molecules very effectively promoted the etch resistance and selectivity under fluoro-containing gases, and minimized the film stress. The etching resistance for C60 and C70 modification could be improved by 65% and 68%, respectively. Together with the fullerene-incorporated resist and the etching processes, the sub-50 nm contact hole could be achieved. In addition, the gap-filling and step coverage capability of titanium nitride into nanometer contact hole with chemical vapor deposition was better than physical vapor deposition.     

High-resolution electron beam lithography and DNA nano-patterning for molecular QCA

Electron beam lithography (EBL) patterning of poly(methylmethacrylate) (PMMA) is a versatile tool for defining molecular structures on the sub-10-nm scale. We demonstrate lithographic resolution to about 5 nm using a cold-development technique. Liftoff of sub-10-nm Au nanoparticles and metal lines proves that cold development completely clears the PMMA residue on the exposed areas. Molecular liftoff is performed to pattern DNA rafts with high fidelity at linewidths of about 100 nm. High-resolution EBL and molecular liftoff can be applied to pattern Creutz-Taube molecules on the scale of a few nanometers for quantum-dot cellular automata.     

Assemblies of carbon nanotubes and unencapsulated sub-10-nm gold nanoparticles

The development of assemblies consisting of unencapsulated, sub-10-nm gold particles attached to individual carbon nanotubes (CNTs) with diameters of 2 nm is described. The assemblies are formed on the surface of a porous anodic alumina (PAA) template on which the CNTs (single- or double-walled) are grown by plasma-enhanced chemical vapor deposition. The Au nanoparticles are formed through an indirect evaporation technique using a silicon nitride membrane mask, and diffuse along the PAA surface into the regions containing CNTs. The nanoparticles bind relatively strongly to the CNTs, as indicated by observations of nanoparticles that are suspended over pores or that move along with the CNTs. This approach may provide a new method to functionalize CNTs for chemical or biological sensing and fundamental studies of nanoscale contacts to CNTs.     

Nano- and microstructuring of graphene using UV-NIL

In this work we demonstrate for the first time the micro-?and nanostructuring of graphene by means of UV-nanoimprint lithography. Exfoliated graphene on SiO(2) substrates, as well as graphene deposited by chemical vapor deposition (CVD) on polycrystalline nickel and copper, and transferred CVD graphene on dielectric substrates, were used to demonstrate that our technique is suitable for large-area patterning (2?×?2?cm(2)) of graphene on various types of substrates. The demonstrated fabrication procedure of micrometer as well as nanometer-sized graphene structures with feature sizes down to 20?nm by a wafer-scale process opens up an avenue for the low-cost and high-throughput manufacturing of graphene-based optical and electronic applications. The processed graphene films show electron mobilities of up to 4.6?×?10(3)?cm(2)?V (-1)?s(-1), which confirms them to exhibit state-of-the-art electronic quality with respect to the current literature.     

Carbon nanotubes grafted on silicon oxide nanowires

In this article, we report the grafting of multi-walled carbon nanotubes on silica nanowires by directly growing nanotubes on the surfaces of the nanowires via chemical vapor deposition (CVD) using ferrocene and xylene as Fe catalyst precursor and carbon source, respectively. The grafted carbon nanotubes are a few micrometers long with diameters of 10 to approximately 30 nm, and grow uniformly along the lengths of the nanowires. The distribution density of the grafted carbon nanotubes on the silica nanowires can be tuned by simply adjusting the CVD growth temperature. Our method provides a simple approach for synthesizing nanometer scale grafted heterostructures between nanotubes and nanowires, which could be used to design and construct high-performance filters, chemical sensors and reinforced composites.     

EBL- and AFM-based techniques for nanowires fabrication on Si/SiGe

Two approaches for sub-100 nm patterning are applied to Si/SiGe samples.The first one combines electron beam lithography (EBL) and anisotropic wet etching to fabricate wires with triangular section whose top width is narrower than the beam size. Widths as small as 20 nm on silicon and 60 nm on Si/SiGe heterostructures are obtained.The second lithographic approach is based on the local anodization of an aluminum film induced by an atomic force scanning probe. Using atomic force microscopy (AFM) anodization and selective wet etching, aluminum and aluminum oxide nanostructures are obtained and used as masks for reactive ion etching (RIE). Sub-100 nm wide wires are fabricated on Si/SiGe substrates.     

Sub-10 nm self-enclosed self-limited nanofluidic channel arrays

We report a new method to fabricate self-enclosed optically transparent nanofluidic channel arrays with sub-10 nm channel width over large areas. Our method involves patterning nanoscale Si trenches using nanoimprint lithography (NIL), sealing the trenches into enclosed channels by ultrafast laser pulse melting and shrinking the channel sizes by self-limiting thermal oxidation. We demonstrate that 100 nm wide Si trenches can be sealed and shrunk to 9 nm wide and that lambda-phage DNA molecules can be effectively stretched by the channels.