硝酸-冰乙酸腐蚀对CdTe太阳电池性能的影响

在CdTe与金属背电极间形成稳定的低电阻接触,有助于提高CdTe太阳电池性能。采用硝酸-冰乙酸腐蚀CdTe薄膜并用真空蒸发法沉积铜背接触层,制备CdTe太阳电池。结果表明,化学腐蚀后在膜面生成了富碲层,硝酸-冰乙酸腐蚀为各向同性刻蚀。对背接触层进行优化退火处理,获得转化效率11.75%的CdTe太阳电池。     

退火方式及PCBM阴极修饰层对聚合物太阳电池的影响

研究了不同退火方式及PCBM阴极修饰层对聚合物太阳电池性能的影响。与前退火相比,后退火的器件性能显著提高,电池的开路电压Voc由0.36V增加到0.60V,能量转换效率η从0.85%提高到1.93%,短路电流密度Jsc和填充因子FF也有不同程度的改善;在电池的活性层与Al电极间沉积一定厚度的PCBM阴极修饰层也能改善电池的性能,当PCBM厚度为3nm时,聚合物太阳电池在100mW.cm-2强度光照下,Voc为0.59V,Jsc为6.43mA.cm-2,FF为55.1%,η为2.09%。     

温场均匀性对CdTe薄膜及太阳电池性能的影响

采用近空间升华法(CSS)制备CdTe多晶薄膜,模拟制备过程中的温场变化,结合,I-V、C-V特性及深能级瞬态谱研究温场均匀性对CdS/CdTe太阳电池性能的影响.结果表明,温场分布和薄膜厚度分布基本一致,温场均匀性对电池组件的开路电压影响不大,对短路电流和填充因子有影响,CdTe薄膜的深中心对温度和频率的响应基本一致.580℃制备的样品暗饱和电流密度最小,载流子浓度较高,光电特性较好,而且空穴陷阱浓度较低,深中心复合作用较小.通过改进温场的均匀性能够制备出组件转换效率为8.2%的CdS/CdTe太阳电池.     

退火温度对Fe／Pr／Cu多层膜巨磁阻的影响

通过采用直流磁控溅射法制备Fe/Pr/Cu多层膜,并在不同温度下进行高真空退火,同时用X射线衍射仪和四探针测试仪测量不同温度下样品的结构和磁电阻,最终可获得具有一定的周期性和层状结构的多层膜Fe/Pr/Cu.退火后其仍保持多层膜结构,但晶粒变大,磁电阻随磁场强度的增大而增大,GMR性能随退火温度的增大先增大后减小.Fe/Pr/Cu多层膜经不同温度相同时间热处理后,层间分离随温度的升高越来越明显,且磁电阻随温度的升高而增强.     

基于RTP热处理的Bi/Te多层膜的热电性能

为改善薄膜热电材料的热电性能,通过磁控溅射制备多层Bi/Te薄膜材料,并用常压高温环境对样品进行快速热退火(RTP),以期在较短时间内获得更高的热电参数.结果表明:Seebeck系数与功率因数最大值与退火温度呈正相关,在400℃退火2~11min,Seebeck系数极大值为-190.41μV/K,功率因数最大值为8.28μW/(K~2·m);随着退火温度的升高,Seebeck系数、载流子浓度、载流子迁移率、电导率和功率因数的振荡幅度也随之加大,并且载流子浓度与Seebeck系数呈反比关系,与电导率呈正比关系,这说明通过改变材料结构和高温快速退火可以得到较高的热电参数,同时保证薄膜的完整性.     

430铁素体不锈钢钢卷工艺和性能分析

为改善430铁素体不锈钢的性能,主要研究了化学成分、铸坯等轴晶比例、热轧工艺制度、热卷退火工艺对材料组织和性能的影响.通过添加微量铝元素,同时降低过热度浇注,优化电磁搅拌工艺改善铸坯的结构.实验结果表明,通过不同热处理对比试验确定了最佳热处理工艺,热卷退火温度为950~1 000℃,保证了成品材料具有优异的力学性能和工艺性能.     

热处理工艺对2.25Crl MoO.25V钢相变温度的影响

采用热膨胀法测试了不同热处理工艺条件下2.25CrlMo0.25V钢的相变温度Ac1和Ac3。结果表明,该钢经退火处理后的相变温度分别为797.1℃和886.2℃,经淬火处理后的相变温度分别为801.3℃和891.4℃,经调质处理后相变温度分别为809.2℃和898.7℃。不同组织对相变温度有影响,实际生产中应考虑热处理对组织和性能的影响。     

n-i-p型非晶硅太阳电池中p/ITO界面特性研究

采用射频等离子体增强化学气相沉积(RF-PECVD)技术,制备n-i-p型非晶硅(a-Si)太阳电池,采用反应热蒸发法制备ITO薄膜作为太阳电池的前电极。通过改变B2H6的掺杂浓度获得了不同晶化率的p层,详细研究了p层性能对p/ITO界面特性以及电池性能的影响。结果表明,在合适晶化率的p层上沉积ITO薄膜有利于优化p/ITO界面的接触特性,将其应用于n-i-p型a-Si太阳电池,能够显著改善电池的开路电压(Voc)和填充因子(FF),最终,在不锈钢(SS)衬底上获得了转换效率为6.57%的单结a-Si太阳电池。     

4Cr5MoSiV1热处理工艺及组织的研究

研究了显象管玻壳模具用 4Cr5MoSiV1钢的不同热处理工艺下的组织与硬度的关系 ,特别是回火温度与硬度的关系 ,提出了预备热处理采用 1 1 0 0℃淬火 ,82 0℃回火的调质处理替代退火处理 ,随后经 1 0 2 0℃淬火 ,780～80 0℃× 4h回火 2次 ,并改善炉内温度分布状况 ,可得到较为均匀理想的组织和性能     

热处理对6061Al/SiCP复合材料阻尼性能的影响

采用喷射共沉积方法制备了606 1Al/SiCP金属基复合材料(MMC),研究了5种热处理制度对其组织和阻尼性能的影响.结果表明不同热处理状态的材料,在常温下内耗值基本相同,而在高温下则存在显著差别.在100 ℃～270 ℃温度范围内,阻尼能力的大小顺序为炉冷＞空冷＞-70 ℃淬火＞原样＞-195 ℃淬火＞水淬;在试验温度范围内(30 ℃～400 ℃),模量随温度的升高表现为单调下降,随应变振幅的增加而增加;同一频率下,内耗值不随应变振幅发生变化.     

浅析英语语音教学中的/n//l/发音错误

在大学英语教学过程中,有关/n/与/l/的发音错误很常见,原因是没有完全掌握它们的发音规则。/n//l/发音规则的相似性造成了/n//l/不分的情况,而且局部方言中这两个音也不作区分,使得/n//l/混淆的情况更加严重。在教学过程中,可以通过重点讲解区分/n/与/l/的发音规则及其区别来避免/n//l/发音错误。本文同时也分析了含糊/l/音的发音错误,通过对/n/与/l/相关的发音错误分析找出大学英语语音教学行之有效的途径:在完全把握单音的发音规则的基础上,进一步强调语调的掌握,使学生拥有良好的语音。     

肼类燃料液滴的亚临界——超临界蒸发/分解燃烧理论

对肼、一甲基肼、偏二甲肼的亚临界－－超临界蒸发／分解燃烧进行了研究,计算了肼类燃料滴在不同压力下液滴温度和蒸发速度的变化历程,计算了蒸发常数、传热数和传质数,其结果和实验数据是吻合的。本文不但考虑了肼类燃料滴的亚临界蒸发／分解燃烧,还考虑到了其超临界蒸发／分解燃烧,并对达到超临界工况时的界限参数进行了计算。     

Reliability of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The reliability issues (I-V characteristics, capacitance retention, fatigue and imprint) were investigated. The I-V curve showed the conventional Schottky diode characteristics with a small current density of - 5.3×10 -10 A/cm2 at a voltage of - 4 V and 6.7×10-8 A/cm2 at a voltage of + 4V, and this characteristic can be maintained below 50℃. The capacitance variety of the ferroelectric diode was only 5 % in 10 hours after withdrawing the applied bias of + 5 V or - 5 V, indicating the diode had good capacitance retention. By applying 100 kHz bipolar pulses of 5 V amplitude, the decay in remanent polarization was only 10% after 109 switching cycles, and meanwhile the increase in coercive field was 12%. After being irradiated for 20 min with a 200 W ultraviolet ray lamp, the remanent polarization and coercive field had both varied, and a voltage shift was obse     

铬/氢/空气/氯体系的焚烧动力学分析

对含铬固体废物焚烧体系进行动力学分析是提出控制六价铬化合物排放措施的基础。本文对铬/氢/空气/氯焚烧体系进行了动力学分析,研究了温度、初始氯含量对产物中六价铬化合物含量的影响。研究表明,六价铬化合物主要以CrO2(OH)2的形式出现,最高含量出现在1700K左右;氯的存在没有导致六价铬化合物CrO2Cl2的大量生成;六价铬化合物CrO2(OH)2的含量随初始氯含量的增大略有下降。建议含铬固体废物实际焚烧过程中,避开1700K左右的温度区域,减少六价铬化合物的排放。     

St/BA/MAA/AA/VAC复合乳液的合成及其应用

采用半连续乳液种子聚合法合成苯乙烯（St）、丙烯酸丁酯（BA）、甲基丙烯酸 （MAA）、丙烯酸（AA）、醋酸乙烯酯 （VAc）的复合乳液.分析了丙烯酸对乳液电解质性能的影响,引发剂对聚合反应转化率的影响及乳化剂含量对乳液粘度的影响.通过正交试验确定组分的适当配比.该共聚乳液的粘度及固体含量符合要求,稳定性好, 性能价格比高.应用表明：用此乳液配制成地毯乳胶,胶膜具有良好的机械性能.     

Low temperature properties of organic-inorganic Ag/ p -CuPc/ n -GaAs/Ag photoelectric sensor

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/p-CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature range of 82 to 350 K. Photoelectric characteristics were measured under nonmodulated filament-lamp illumination. It was observed that such sensor parameters as rectification ratio, threshold voltage, junction, shunt and series resistances, open-circuit voltage and short circuit current are temperature-dependent. It was found that wide-range voltage-current characteristics of the sensor may be described similarly to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films, the energy-band diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results. Supported by the National Engineering and Scientific Commission of Pakistan     

减小ITO/PTCDA/P-Si/Al型光电探测器暗电流的方法

有机/无机同型异质结是一种新型的光电子元器件,由于它有制备工艺简单,一致性和稳定性好,光电转换效率高,频响特性宽等优点,在光电子领域将有广泛的应用前景.将有机半导体材料苝四甲酸二酐淀积在10 Ω·cm的P-Si无机半导体片上,形成有机/无机同型异质结,然后采用各种工艺处理方法有效的降低了它的暗电流,暗电流减小到了10-9A数量级.对降低暗电流的工艺措施和方法进行了分析和讨论.实验结果还表明,ITO/PTCDA/P-Si/Al同型异质结的暗电流主要成分是耗尽区中载流子的产生-复合电流结的反向饱和电流.     

St/BA/MAA/AA/VAC复合乳液的合成及其应用

采用半连续乳液种子聚合法合成苯乙烯(St)、丙烯酸丁酯(BA)、甲基丙烯酸(MAA)、丙烯酸(AA)、醋酸乙烯酯(VAc)的复合乳液。分析了丙烯酸对乳液电解质性能的影响,引发剂对聚合反应转化率的影响及乳化剂含量对乳液粘度的影响。通过正交试验确定组分的适当配比。该共聚乳液的粘度及固体含量符合要求,稳定性好,性能价格比高。应用表明:用此乳液配制成地毯乳胶,胶膜具有良好的机械性能。     

Modification of LiCo1/3Ni1/3Mn1/3O2 cathode material by CeO2-coating

LiCo_1/3Ni_1/3Mn_1/3O₂ was coated by a layer of 1.0 wt% CeO₂ via sol-gel method. The bared and coated LiMn_1/3Co_1/3Ni_1/3O₂ was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), cyclic voltammogram (CV) and galvanotactic charge-discharge test. The results show that the coating layer has no effect on the crystal structure, only coating on the surface; the 1.0 wt% CeO₂-coated LiCo_1/3Ni_1/3Mn_1/3O₂ exhibits better discharge capacity and cycling performance than the bared LiCo_1/3Ni_1/3Mn_1/3O₂. The discharge capacity of 1.0 wt% CeO₂-coated cathode is 182.5 mAh·g⁻¹ at a current density of 20 mA·g⁻¹, in contrast to 165.8 mAh·g⁻¹of the bared sample. The discharge capacity retention of 1.0 wt% CeO₂-coated sample after 12 cycles reaches 93.2%, in comparison with 86.6% of the bared sample. CV results show that the CeO₂ coating could suppress phase transitions and prevent the surface of cathode material from direct contact with the electrolyte, thus enhance the electrochemical performance of the coated material.     

Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop with P, = 15 μC/cm2 and Ec = 48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12% . The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7 × 10-8 A/cm2 at a voltage of + 4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic "1" and logic "0" at a read voltage of + 2V, and the stored logical value ("1" or "0") could be read out in 30 min.