Liquid phase low temperature sintering of niobate and cerate fine powders

The efficiency of simultaneous application of chemically-derived starting powders and melt-forming sintering aids in low temperature sintering has been demonstrated. Doping of cryochemically processed BiNbO₄ powders with CuO/V₂O₅ causes reducing sintering temperatures from 850–900^∘C to 700–720^∘C. Similar doping of Zn₃Nb₂O₈ fine powders allows to obtain ceramics with density 97–98% and Q × F values up to 40 000 GHz at T > 720^∘C. The sintering of solution-derived BaCeO₃ powders doped with CuO results in dense ceramics at T = 1000^∘C. Morphological evolution during sintering was observed using hot stage SEM. Low temperature liquid phase sintering of fine powders is rather sensitive to the traces of secondary phases and to the micromorphology of starting powders though observed reduction of sintering temperatures is substantially larger than for traditional liquid phase sintering of coarse-grained oxide powders.     

Dielectric properties of ZnNb2 O 6 -TiO 2 mixture thin films

ZnNb₂O₆-TiO₂ mixture thin films with multilayer structures were fabricated via a sol-gel spin coating process. TiO₂ layers were deposited on the pre-crystallized ZnNb₂O₆ layers in order to suppress the formation of the ixiolite phase which always forms in the bulk system. The phase constitution of the thin films, confirmed by X-ray diffraction (XRD), could be controlled by the annealing temperatures, which, in turn, influenced the dielectric properties of the thin films. TiO₂ layers crystallized as the anatase phase and then transformed to the rutile phase at temperatures higher than 725^∘C. Dielectric constants of the mixture thin films, measured at 1 MHz with an MIM (metal-insulator-metal) structure, increased from 27 to 41 with dielectric losses below 0.005 as the annealing temperature increased from 700^∘C to 900^∘C. The increase in the dielectric constants was understood to originate from the increasing amounts of the rutile phase. Temperature coefficients of capacitance (TCC) were also measured between 25^∘C and 125^∘C, which showed a decreasing manner from positive values to negative values with increasing annealing temperatures. When annealed at 850^∘C, the TCC of the thin films could be tuned to be approximately 0 ppm/^oC with dielectric constant and dielectric loss of 36 and 0.002, respectively.     

Electrically conductive carbon-coated ceramic fiber media

Porous ceramic fiber composites were coated with pyrolytic carbon by the decomposition of either propane or infiltrated phenolic resin in a nitrogen atmosphere at 800–900^∘C. The amount of carbon coating was varied to tailor the electrical conductivity of the carbon-coated composites. The electrical and thermal conductivity of the composites were measured at room temperature using a two-point method and a hot-wire one, respectively. Up to 30 wt% pyrolytic carbon, the electrical conductivity σ showed linearly increasing tendency and was fitted by the effective conductivity according to the parallel rule of a mixture σ =ΣV _i⋅σ_i with an effective conductivity of pyrolytic carbon σ_c and volume fraction of coated carbon V _c. The electrical conductivity of coated carbons prepared from propane at 900^∘C and phenolic resin at 800^∘C was of the order of 10⁰ and 10⁻¹ S cm⁻¹, respectively.     

The effect of alumina addition on the electrical conductivity of Gd-doped ceria

Acceptor doped-ceria is a possible electrolyte material for the IT-SOFC (intermediate temperature solid oxide fuel cell) due to its high oxygen-ion conductivity. However, its use has been limited by its mechanical weakness and the appearance of electronic conductivity in reducing condition. In this study, alumina was selected as an additive in the doped-ceria to see if it increases the oxygen-ion conductivity and mechanical strength. Effects of alumina addition in doped ceria were studied as a function of alumina content and acceptor (Gd) content. The electrical conductivity of (Ce_1−x Gd _x O_2−δ)_1−y + (Al₂O₃) _y (x = 0–0.35, y = 0–0.10) was measured by using impedance spectroscopy. The grain conductivity of Ce_0.8Gd_0.2O_2-δ (GDC20) with 5 mol% alumina increased ∼3 times from that of GDC20 at 300^∘C. The grain conductivity was even ∼2 times higher than that of Ce_0.9Gd_0.1O_2−δ (GDC10) at 300^∘C. The electrical conductivity of GDC20 without alumina addition, measured at 500^∘C in air, rapidly decreased after exposure to reducing condition (Po₂∼10⁻²² atm) at 800^∘C. However, the decrease was much slower in GDC20 with alumina addition, indicating the improved mechanical strength. Among the examined compositions, (Ce_0.75Gd_0.25 O_2-δ)_0.95 + (Al₂O₃)_0.05 (GDC25A5) showed the highest conductivity at most temperatures.     

Conducting perovskite LaNi0.6Co0.4O3 ceramics with glass additions

LaNi_0.6Co_0.4O₃ (LNC) is a perovskite-type conducting ceramic oxide, which is an ideal electrode layer for perovskite ferroelectric and piezoelectric thin and thick film devices, owing to its unique crystal structure that can facilitate film growth and improve fatigue behavior. When used for thick films, however, one of the drawbacks is its high sintering temperature of above 1200^∘C, which can lead to severe inter-diffusion. In an attempt to reduce the sintering temperature of LNC without substantially deteriorating the electrical properties, we have investigated the effects of doping LNC with an appropriate glass addition. LNC powder was synthesized through a solid state reaction process. Varying amounts of glass compositions were then introduced, in order to study their effects on densification, microstructure and electrical properties of LNC. The glass compositions exhibited a strong effect on the sintering behaviors and microstructure, where the density after sintering was improved with increasing amount of glass addition. While the electrical conductivity was adversely affected by an increasing amount of glass addition, the composition with optimal glass addition showed a lowered sintering temperature of 950^∘C, and at the same time maintained a high conductivity of 117 S cm⁻¹.     

Influence of microstructure on oxide ionic conductivity in doped CeO2 electrolytes

Doped ceria (CeO₂) compounds are fluorite type oxides, which show oxide ionic conductivity higher than yttria stabilized zirconia, in oxidizing atmospheres. As a consequence of this, considerable interest has been shown in application of these materials for `low (500^∘–650^∘C)’ temperature operation of solid oxide fuel cells (SOFCs). In this study, some rare earth (eg. Gd, Sm, and Dy) doped CeO₂ nano-powders were synthesized via a carbonate co-precipitation method. Fluorite-type solid solution were able to be formed at low temperature, such as 400^∘C and dense sintered bodies were subsequently fabricated in the temperature ranging from 1000^∘ to 1450^∘C by conventional sintering (CS) method. To develop high quality solid electrolytes, the microstructure at the atomic level of these doped CeO₂ solid electrolytes were examined using transmission electron microscopy (TEM). The specimens obtained by CS had continuous and large micro-domains with a distorted pyrochlore structure or related structure, within each grain. We conclude that the conducting properties in these doped CeO₂ systems are strongly influenced by the micro-domain size in the grain. To minimize the micro-domain size, spark plasma sintering (SPS) was examined. SPS has not been used to fabricate dense sintered bodies of doped CeO₂ electrolytes, previously; carbon from the graphite dies penetrates the specimens and inhibits densification. To overcome this challenge, and to be able to produce dense sintered bodies of doped CeO₂ of a grain size that minimizes the microdomain growth, a combination of SPS and CS methods were examined. Using this combined method we report that we were able to produce fully dense specimens with improved conductivity. This is correlated with a reduction in the size of the micro-domains. Consequently we conclude that the control of micro-domain size within the grain structure is a key component in the successful design of electrolyte materials with improved conductivity.     

Calculation of the intrinsic dead layers thicknesses from Au/Ba0.5Sr0.5TiO3/Pt thin film capacitors

Ferroelectric Ba_0.5Sr_0.5TiO₃ (BST) films were prepared on Pt/Ti/SiO₂/Si substrates by the sol-gel process. The films were spin-coated at 2000 rpm for 30 secs and then pyrolysed for 5 mins at the temperature of 350^∘C. This coating procedure was repeated for 3, 4, 5 and 6 times to obtain BST films with different thicknesses. After coating the films with the desired repetition times, the films were finally annealed in a conventional furnace at temperatures ranging from 600^∘C to 800^∘C with a 50^∘C interval in between. The films obtained with an annealing procedure of 750^∘C were polycrystalline with the presence of an impurity BaCO₃ phase. The capacitance and leakage current were measured and used to extract information on the metal-BST interface. With the series capacitance model and modified Schottky emission equation, the thickness of the dead layers for Au/BST and Pt/BST interfaces were calculated to be less than 6 nm and 5 nm, respectively.     

Ferroelectricity in Aurivillius-Type Structure Ceramics with n = 2 and (SrBi2Nb2O9)0.35(Bi3TiNbO9)0.65 Composition

Aurivillius-type structure compounds are good candidates for their use as high temperature piezoelectrics, due to their high ferro-paraelectric phase transition temperature. However, this characteristic correlates with a high coercive field that makes difficult the poling process, necessary to have piezoelectric activity. The electric properties, specially conductivity, limit the maximum poling field. On the other hand, piezoelectric properties are directly related to the ferroelectric remanent polarization. Thus, the study of both characteristics is towards improving the piezoelectric properties of these materials. In this work, ceramics with nominal composition (SrBi₂Nb₂O₉)_0.35(Bi₃TiNbO₉)_0.65 (T_C∼ 760^∘C), prepared by hot pressing of mechanically activated precursors, have been studied. The electrical properties (permittivity, dielectric loss factor and d.c. conductivity) as a function of frequency and temperature have been measured, up to temperatures higher than the ferro-paraelectric phase transition, and their anisotropy explained in terms of the ceramic texture. Well-saturated ferroelectric hysteresis loops at 250^∘C have been obtained, with values of P_r = 21.4 μ C/cm² and E_c = 70.4 kV/cm.     

Thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds fabricated by spark plasma sintering

P-type thermoelectric Bi_0.5Sb_1.5Te₃ compounds were prepared by the spark plasma sintering method with temperature ranges of 300–420^∘C and powder sizes of ∼75 μm, 76–150 μm, 151–250 μm. As the sintering temperature increased, the electrical resistivity and thermal conductivity of the compound were greatly changed due to an increase in the relative density. The Seebeck coefficient and electrical resistivity were varied largely with decreasing the powder size. Subsequently, the compound sintered at 380^∘C with the powders of ∼75 μm showed the maximum figure-of-merit of 2.65 × 10⁻³K⁻¹ and the bending strength of 73 MPa.     

ZnGa2O4 thin films fabricated by Sol-gel spinning coating process

ZnGa₂O₄ thin film phosphors have been synthesized on ITO coated glass and soda-lime glass at a firing temperature of 500^∘C and an annealing temperature of 500^∘C and 600^∘C via a chemical solution method using Zinc acetate dihydrate, Gallium nitrate hydrate and 2-methoxiethanol as a solution. XRD patterns of the film phosphors synthesized showed the peaks of ZnGa₂O₄ crystalline phases. AFM surface morphologies of the ZnGa₂O₄ thin film phosphors revealed marked differences according to an annealing temperature of 500^∘C and 600^∘C under an annealing atmosphere (3% H₂/Ar). On the other hand, the sheet resistance of ZnGa₂O₄ thin film phosphors, which were measured by four-point probe instrument, was approximately 5.76 Ω /square and 7.86 Ω /square with annealing temperature, respectively. The ZnGa₂O₄ thin film phosphors exhibited blue emission spectra with peak wavelength of 434 nm and 436 nm by ultra-violet excitation around 230 nm.     

Preparation and electrical properties of 0.4Pb(Zn1/3Nb2/3)O3-0.6Pb(Zr0.4Ti0.6)O3 thin films by 2-step annealing method

Films of (1−x)Pb(Zn_1/3Nb_2/3)O₃-xPb(Zr_0.4Ti_0.6) O₃ (x = 0.6, 40PZN-60PZT) were deposited on Pt/TiO₂/ SiO₂/Si substrate through spin coating. Using a combination of homogeneous precursor solution preparation and two-step pyrolysis process, we were able to obtain the 40PZN-60PZT thin films of perovskite phase virtually without pyrochlore phase precipitation after annealing above 650^∘C. But since annealing done at the high temperatures for extended time can cause diffusion of Pt, TiO₂ and Si, and precipitation of nonstoichiometric PbO, we adopted 2-step annealing method to circumvent these problems. The 2-step annealed films show dense microstructure than the 1-step films annealed at higher temperature. Furthermore, the root-mean-square surface roughness of 220 nm thick films which are annealed at 720^∘C for 1 min and then annealed at 650^∘C for 5 min was found to be 3.9 nm by atomic force microscopy as compared to the 12 nm surface roughness of the film annealed only at 720^∘C for 5 min. The electrical properties of 2-step annealed films are virtually same and those of the 1-step annealed films annealed at high temperature. The film 2-step annealed at 720^∘C for brief 1 min and with subsequent annealing at 650^∘C for 5 min showed a saturated hysteresis loop at an applied voltage of 5 V with remanent polarization (P _r) and coercive voltage (V _c) of 25.3 μC/cm² and 0.66 V respectively. The leakage current density was lower than 10⁻⁵A/cm² at an applied voltage of 5 V.     

Improvement of the thermal and chemical stability of Al doped ZnO films

To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300^∘C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO₂ targets. Amorphous ZTO films had resistivity in the range from 10⁻² to 10⁻³ Ωcm and were stable up to temperature of 400^∘C. Heat treatments of bare AZO films in the atmosphere at 400^∘C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400^∘C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.     

Influence of sintering temperatures on the electrical property of bismuth sodium titanate based piezoelectric ceramics

A systematic investigation of cerium and stannum doped 0.94(Bi_0.5Na_0.5)TiO₃−0.06BaTiO₃ (Sn&Ce-BNT6BT) based lead-free piezoelectric ceramics is undertaken to understand the influence of sintering temperature on electrical properties. The X-ray diffraction patterns showed that all of the Sn&Ce-BNT6BT ceramics exhibited a single perovskite structure with the co-existence of the rhombohedral and tetragonal phase. The smaller grain size of Sn&Ce-BNT6BT ceramics was obtained at lower sintering temperature, and more cubical grains of Sn&Ce-BNT6BT ceramics were obtained at higher sintering temperature. The temperature dependence of dielectric permittivity of the compositions exhibited strong dispersion with the increasing temperature, and the dielectric loss tangent increased dramatically while the temperature over 225^∘C. The depolarization temperature T _d of Sn&Ce-BNT6BT ceramics sintered at 1160^∘C was 92.6^∘C. The remnant polarizations P _r for Sn&Ce-BNT6BT ceramics sintered at 1120 and 1200^∘C were found to be 28.8 and 33.4 μC/cm² at room temperature, respectively.     

Control of 0.2CaTiO3-0.8Li0.5Nd0.5TiO3 microwave dielectric ceramics by additions of Bi2Ti2O7

Ceramics of 0.2CaTiO₃-0.8Li_0.5Nd_0.5TiO₃) have been prepared by the mixed oxide route using additions of Bi₂O₃-2TiO₂ (up to 15 wt%). Powders were calcined 1100^∘C; cylindrical specimens were fired at temperatures in the range 1250–1325^∘C. Sintered products were typically 95% dense. The microstructures were dominated by angular grains 1–2 μm in size. With increasing levels of Bi₂O₃-2TiO₂ additions, needle and lath shaped second phases developed. For Bi₂Ti₂O₇ additions up to 5 wt%, the relative permittivity increased from 95 to 131, the product of dielectric Q value and measurement frequency increased from 2150 to 2450 GHz and the temperature coefficient of resonant frequency (τ _f ) increased from −28pp/^∘C to +22pp/^∘C. A product with temperature stable τ _f could be obtained at ∼2 wt% Bi₂Ti₂O₇ additions. For high levels of additives, there is minimal change in relative permittivity, the Qxf values degrade and τ _f becomes increasingly negative.     

Study of nanocrystal TiO2 thin films by thermal annealing

The amorphous films were annealed in a wide temperature range (250–1000^∘C) and film properties of TiO₂ thin films were studied. Nano-sized anatase polycrystallites had been induced by thermal annealing for the films annealed at and above 300^∘C as confirmed by X-ray diffraction. Strong LO-phonon Raman modes, especially B_1g (395 cm⁻¹) and E _g (636 cm⁻¹) in Raman spectra and the absorption peak at 436 cm⁻¹ in absorbance spectra by Fourier transform infrared spectroscopy also indicated the existence of anatase phase in crystalline thin films. In addition, with the increase of the annealing temperature, the wettability of the film surface was enhanced as shown by the decrease of water contact angle from over 90^∘ to less than 40^∘. Moreover, upon UV laser irradiation on film surface, the water contact angle saturated at 10^∘ indicative of a highly hydrophilic surface for all the films, which arose from the dissociative adsorption of water molecules on the defect sits of the surface generated by the photocatalysis reactions of TiO₂. This behavior makes the film a good potential candidate for self-clean coatings.     

Selective Gas Detection of SnO2-TiO2 Gas Sensors

The composite, consisting of two materials with different sensing temperatures, may show the selectivity for a particular gas. In this study, the microstructural and compositional effects on the electrical conductivity and the CO and the H₂ gas sensing properties of SnO₂-TiO₂ composites were examined. SnO₂-TiO₂ composites in entire (0–100 mol%) composition range were fabricated in the form of porous pellet by sintering at 800C for 3 h. The effects of CuO-coating (or doping) on the electrical conductivity and the sensing properties to 200 ppm CO and H₂ gases were examined.With CuO-coating, SnO₂-TiO₂ composites showed the increased sensitivity to CO gas and a large difference in the sensing temperatures between CO and H₂ gases. As a result, CuO-coated SnO₂-TiO₂ composites showed the selectivity for CO gas between 100C and 190C and the selectivity for H₂ gas between 280C and 380C.     

Crystallinity and photocatalytic activity of liquid phase deposited TiO2 films

Anatase TiO₂ films were deposited on glass substrates at 50 and 200^∘C to investigate the effect of growth temperature on the photocatalytic acitivity of the films. It was observed that the films grown at 200^∘C were composed of columnar crystallites and were more porous than the films grown at 50^∘C which had more compact structures. Also, the film crystallinity increased from 75 to 90% if the higher growth temperature was used. Despite the higher crystallinity, it was observed that for crystallinities between 60 and 90%, the photocatalytic behavior of the films was more significantly affected by changes in the surface area.     

Effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of the BaTi4O9 ceramics

The effect of B₂O₃ and CuO on the sintering temperature and microwave dielectric properties of BaTi₄O₉ ceramics was investigated. The BaTi₄O₉ ceramics were able to be sintered at 975^∘C when B₂O₃ was added. This decrease in the sintering temperature of the BaTi₄O₉ ceramics upon the addition of B₂O₃ is attributed to the formation of BaB₂O₄ second phase whose melting temperature is around 900^∘C. The B₂O₃ added BaTi₄O₉ ceramics alone were not sintered below 975^∘C, but were sintered at 875^∘C when CuO was added. The formation of BaCu(B₂O₅) second phase could be responsible for the decrease in the sintering temperature of the CuO and B₂O₃ added BaTi₄O₉ ceramics. The BaTi₄O₉ ceramics containing 2.0 mol% B₂O₃ and 5.0 mol% CuO sintered at 900^∘C for 2 h have good microwave dielectric properties of ε_r = 36.3, Q× f = 30,500 GHz and τ_f = 28.1 ppm/^∘C     

Dielectric properties of the BaTiO3-AlN-additive system

The mixed system of BaTiO₃ and AlN has been investigated in terms of dielectric properties and microstructure. Two different types of additives, bismuth oxide and bismuth borosilicate glass, were used to lower sintering temperature. First, the addition of a fixed content (3 wt.%) of Bi₂O₃ provided densification at 1200^∘C where monotonous decreases of dielectric constant were found with increasing the content of AlN. On the other hand, the bismuth borosilicate glass was effectively used to decrease firing temperature to 850^∘C, which is suitable for thick film capacitor applications. A practical demonstration of thick film capacitors using a Ag electrode on a 96% alumina substrate indicated that the optimum composition of 76BaTiO₃-20AlN-4glass may be adequate for generating k of 79.4 and tan δ of 0.014 at 1 MHz as a result of the low temperature firing of 850^∘C in air atmosphere.     

Temperature Sensitive Properties of the La(Ti<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>)O<Subscript>3</Subscript> System

The electric mechanisms of perovskite-type LaMnO₃ was investigated with B-site substitution in this paper. Samples of La(Ti_xMn_{1 − x})O₃ (0.1 ≰ x ≰ 0.7) were sintered at different temperature. The voltage-temperature (V-T) curves of the samples were tested from room temperature (25^∘C) to 300^∘C, then the electric properties were measured and analyzed. The experimental results showed that the resistivity-temperature (ρ-T) curves of the samples matched NTC characteristic. The resistivity increased slightly with the increase of Ti amount as x was less than 0.5, however, it rose greatly after x exceeded 0.5; The sintering temperatures have a little influence on the resistivity, except for the sample with x = 0.7.