g-C3N5纳米片光催化还原Cr(Ⅵ)和抗菌性能研究

在高温热聚合制备块体石墨相氮化碳(g-C₃N₅)的基础上，通过液相超声剥离获得g-C₃N₅纳米片，利用扫描电镜(SEM)、透射电镜(TEM)、X射线衍射(XRD)、红外光谱(FT-IR)、X射线光电子能谱(XPS)、紫外-可见光(UV-Vis)、荧光光谱(PL)及BET比表面积对样品进行表征。结果表明：g-C₃N₅纳米片在可见光下还原Cr(Ⅵ)和灭活大肠杆菌(E.coli)的性能均优于块体g-C₃N₅。g-C₃N₅纳米片在30min内对Cr(Ⅵ)的还原率达到86%,反应速率常数为块体g-C₃N₅的1.46倍。g-C₃N₅纳米片在180min内将E.coli全部灭活，h⁺和·O^-₂为抗菌过程的主要活性基团，其通过氧化作用...     

Fe对Mn/CeO2-TiO2催化剂低温NH3选择性催化还原NO的影响

以锰氧化物为活性组分,CeO2-TiO2为载体制备了Mn/CeO2-TiO2催化剂.考察了Fe的加入对Mn/CeO2-TiO2的低温NH3-SCR活性的影响.并采用BET比表面积,H2程序升温还原(H2-TPR)和X射线光电子能谱(XPS)等手段对催化剂进行了表征.活性结果表明,Fe的引入显著改善了Mn/CeO2-TiO2的NH3-SCR活性,催化剂在113～250℃之间表现出良好的NO去除效率.表征结果表明,Fe的引入促进了锰物种在CeO2-TiO2表面的分散,降低了Mn-Fe/CeO2-TiO2中锰物种的还原温度.XPS分析指出Mn-Fe/CeO2-TiO2表面Mn以+4价存在,而Fe主要以+3价的Fe2O3存在,且Fe与载体表面间存在强相互作用.     

Na+掺杂对Li3V2（PO4）3/C晶体结构及性能的影响

利用一步碳热还原法制备了Li3-xNaxV2(PO4)3/C(x=0、0.01、0.02、0.03、0.05、0.08、0.10、0.15)复合正极材料,并用X射线衍射、扫描电镜、红外光谱、循环伏安法、电化学阻抗谱和恒电流充放电技术研究了掺杂对材料结构、微观形貌、充放电性能和Li+脱出嵌入过程的影响。研究表明掺杂少量Na+不影响材料Li3V2(PO4)3的基本结构,但可在Li3V2(PO4)3中形成电子缺陷,提高晶体内部原子的无序化程度,降低极化和电荷转移电阻,从而改善材料的电化学性能。与Li3V2(PO4)3/C相比,Li2.98 Na0.02 V2(PO4)3/C在倍率为15C下的第50次放电容量提高12.1mAh/g,具有较好的倍率性能和循环性能。     

SnS2-Ag/g-C3N4三相复合材料的合成及其光催化性能

为解决单相光催化材料结构和性能上的缺陷,通过二次煅烧法获得二维石墨相氮化碳g-C₃N₄,通过光沉积法获得Ag/g-C₃N₄,选择SnS₂与Ag/g-C₃N₄通过简单的超声和蒸发溶剂的方法制备了三相复合材料SnS₂-Ag/g-C₃N₄,成功构建了n-n型异质结,并对材料的微观形貌、相结构、光响应能力和孔隙结构等进行了详尽表征。结果表明：材料依然保留了片层状结构并构建了浪花状形貌,各相结晶度较高且界面构建良好,形成了类似三明治结构的2D-0D-2D形貌,复合材料较单相材料具有更高的比表面积和更强的可见光响应性能。当SnS₂的含量为10wt%时,所合成SnS₂-Ag/g-C₃N₄复合材料对罗丹明B的光催化降解效率达到最高的95.6%,降解速率最快且为g-C₃N     

球磨方式对制备(Ti,15W,5Mo,0.2V)(CN)-20Ni复合粉相结构的影响

利用X衍射仪研究了滚筒球磨和高能球磨后的混合料经碳热还原氮化制备(Ti,15W,5Mo,0.2V)(CN)-20Ni复合粉工艺过程中的物相演变.结果表明,普通滚筒球磨混合方式下的混合体系遵循TiO2→Ti3O5→Ti(ON)→Ti(CN)的相转变规律;而高能球磨混合方式下混合料的衍射峰普遍宽化,物料细化,活性提高,其中以高能球磨干混的效果最佳,其在1200℃即可获得无杂相的(Ti,15W,5Mo,0.2V)(CN)-20Ni复合粉,且反应过程未出现Ti(ON)中间相;另外在不同球磨方式下,随着Ti(CN)的形成,均有大量W、Mo、V等原子从Ni固溶体相中析出,并扩散进入Ti(CN)的晶格形成(Ti,W,Mo,V)(CN)固溶体.     

Ti1Li3Al2-LDHs/g-C3N4复合材料的制备及其光催化CO2-甲苯反应特性

光催化CO₂还原是实现CO₂绿色转化利用的重要途径之一,但一直受其反应转化效率低的制约。开发新的CO₂还原反应体系和提高光催化剂的可见光利用率及光生电子与空穴的分离效率是解决上述问题的有效方法。本文利用甲苯作为底物,构建了光催化CO₂-甲苯耦合反应的新体系,并通过静电组装法合成了Ti₁Li₃Al₂-层状双氢氧化物(LDHs)/石墨相氮化碳(g-C₃N₄)复合光催化剂。重点研究了该复合光催化剂的光电性质及在CO₂-甲苯耦合反应体系中的光催化反应特性。结果表明,在光催化CO₂-甲苯耦合体系中,Ti₁Li₃Al₂-LDHs/g-C₃N₄作用下,CO₂被还原为CO,甲苯被氧化为苯甲醇、苯甲醛及苯甲酸苄酯,其中苯甲醛和苯甲醇的含...     

添加La2O3对粉煤灰合成Al2O3-SiC复合粉体的影响

以粉煤灰和活性炭为原料,通过碳热还原反应在Ar气氛下合成Al_2O_3-SiC粉体,探究了一条低成本合成Al_2O_3-SiC粉体的可行途径。研究了添加La_2O_3对合成过程的影响。采用XRD和SEM表征了材料的物相组成和显微形貌。结果表明:当粉煤灰与活性炭质量比为100∶44,在1 550℃下保温5h,添加6%(质量分数)的La_2O_3时,可合成性能良好的Al_2O_3-SiC粉体,颗粒分布均匀,平均粒径为0.5~1μm,较不添加La_2O_3合成温度降低约50℃。     

g-C3N4/Pb复合材料制备及其在铅炭电池负极材料中的应用

为改善铅炭电池的析氢缺陷,提高电池循环使用寿命,以尿素为前驱体制备层状石墨相氮化碳(g-C₃N₄),并将其作为添加剂制备铅炭电池负极板,以活性炭(AC)为对照,研究了g-C₃N₄结构和添加量对铅炭电池电化学性能的影响。结果表明：g-C₃N₄的加入使析氢反应(HER)得到明显抑制,-1.5 V下1wt%gC₃N₄负极板的析氢电流仅为AC负极板的5%。交流阻抗谱图显示1wt%g-C3N4和AC负极材料阻抗(Rs)为0.19868Ω和1.749Ω。更重要的是1wt%g-C₃N₄负极板比电容比1wt%AC负极板高344%。在5 000 h高倍率部分荷电态(HRPSoC)下的电池循环寿命测试中,加入g-C₃N₄后电池寿命比加入AC提升62%。500次循环后,电池容量保持率仍有70%。g-C₃N₄     

硼砂对自蔓延高温合成ZrB2粉体的影响

以ZrO_2、Mg、B_2O_3及Na_2B4O_7为原料,采用自蔓延高温合成技术制备ZrB2粉体。通过FactSage7.0软件计算,从热力学角度研究了该反应体系发生自蔓延反应的可能性。采用X射线粉末衍射物相分析仪、场发射电子扫描电镜-能谱分析对最终产物的物相组成及显微形貌进行检测。分析结果显示,过量的Mg、B_2O_3可有效提高产物中ZrB_2的含量,Mg和B_2O_3分别过量40%(质量分数)、30%(质量分数)为Mg-ZrO_2-B_2O_3体系的较佳配比。基于上述优化配比,研究了用无水硼砂(Na_2B_4O_7)替换原料中B_2O_3对产物ZrB_2含量及晶粒尺寸的影响,当替换量达到15%(质量分数)时,ZrB_2的含量最高,并且随着Na_2B_4O_7替换量的增加,产物的晶粒尺寸由2μm减小至不足0.5μm。     

碳纳米管-Ti3AlC2/AZ91D复合材料的微观组织及力学性能

采用化学镀铜的方法对增强相碳纳米管(CNTs)和Ti₃AlC₂进行表面改性,热压烧结制备了CNTs-Ti₃AlC₂/AZ91D复合材料,研究了其微观组织和力学性能的变化及增强机制。结果表明:CNTs-Ti₃AlC₂/AZ91D复合材料内部主要物相为CNTs、Ti₃AlC₂、Mg和Al₁₂Mg₁₇,增强相均匀分布在基体内,在增强相与基体的界面处存在U相(MgAlCu),使二者界面结合良好。当增强相CNTs 和Ti₃AlC₂含量分别为1wt%和25wt%时,较镁合金AZ91D,CNTs-Ti₃AlC₂/AZ91D复合材料的弹性模量、拉伸强度、屈服强度和延伸率分别提高了120.30%、25.72%、126.50%和36.84%,弯曲强度和压缩强度分别为337.92 MPa和436.27 MPa。CNTs-Ti₃AlC₂/AZ91D复合材料的断裂方式表现为脆性断裂,其强化机制主要为热配错强化、Orowan强化和细晶强化机制。      

N2 post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire temperature

For nitride layer formation on a hydrogenated microcrystalline silicon film surface, post-deposition treatments were carried out using a tungsten wire heated to 1700 °C in N₂ (12 Torr) or N₂/H₂ (4 Torr) atmospheres. The nitride layers were investigated with an X-ray photoelectron spectroscopy. The intense peaks due to the Si-N bonds were observed. Those in N₂ treatment were larger with increasing the treating time and decreased with depth direction, while those in N₂/H₂ treatment were virtually unchanged with the treating time and the depth up to about 20 nm. These findings indicate that even at a low wire temperature of 1700 °C, N₂ molecules decompose sufficiently and nitride layers can be formed when high gas pressures are used.     

Formation of nanoparticles and nanorods in a N2-C2H4-H2 atmospheric pressure dielectric barrier Townsend discharge

In the present publication, the effect of the addition of H₂ in an atmospheric pressure Townsend Dielectric Barrier Discharge in an atmosphere of N₂-C₂H₄ is examined with an emphasis put on the evaluation of the surface chemistry and growth mechanisms. Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and Fourier Transform Infrared Spectroscopy were used to characterize the coatings. For all H₂ concentrations, films obtained present high N/C ratio (∼ 0.8) with high NH_x and nitrile content. However, when H₂ is added in the discharge, nanoparticles/nanorods are formed imbedded in a smooth film. The average size of the nanorods is 100-200 nm in diameter with length from 1 to 10 μm. A growth mechanism is proposed to explain the formation of the nanorods on the surface of the coating in the presence of H₂.     

Formation mechanism and high temperature mechanical property characterization of SiC depletion layer in ZrB2/SiC ceramics

When ZrB₂/SiC ceramics are exposed to high temperatures, a SiC depletion layer will appear near the material surface. Due to the degradation of mechanical properties for the SiC depletion layer, the ZrB₂/SiC ceramics might fail initially at the SiC depletion layer. Based on chemical reaction analysis and microstructural observation, a pore evolution model is presented to characterize the formation mechanisms of the SiC depletion layer, which can calculate the variation in the volume fraction of each constituent during the oxidation process. The micromechanical models are developed to analyze the mechanical properties of the SiC depletion layer during high temperature oxidation. It is found that relative modulus and relative strength of the SiC depletion layer initially decrease and then gradually rise with the increase of oxidation time. As the SiC content of ZrB₂/SiC ceramics increases, the porosity of SiC depletion layer increases as well, whereas the mechanical properties significantly decrease.     

A study on thermal emission of charges at Si3N4—GaAs interfaces after annealing in N2 and N2 + H2 mixtures

Si₃N₄—GaAs interfaces subjected to annealing in N₂ + H₂ mixture or pure N₂ atmosphere were investigated by a small-signal charge deep-level transient spectroscopy (Q-DLTS) method. The method measures the physical parameters of selective populations of the interface traps continuum. A dependence of the capture cross-section on activation energy was constructed for the continuum of interface states at the Si₃N₄—GaAs interface. The dependence shows an exponential character in the part of the gap ranging from 0.3 to 1.0 eV below the conduction band minimum. It was found that annealing in the temperature interval 400–450 °C reduces the zero-bias band bending by about 0.1 eV. At temperatures of 500 °C and more, degradation of the interface started; compared with annealing in pure N₂ ambient, annealing in an N₂ + H₂ mixture degraded the interface slightly more.     

Zr35Ti30Cu8.25Be26.75非晶合金在高速率下的高温流变本构模型

为研究锆基非晶合金在过冷液相区内较高温度区间和较高应变速率变形条件下的流变行为,准确描述温度和应变速率对非晶合金流变应力的影响,用Zwick/Roell力学性能实验机对Zr₃₅Ti₃₀Cu_8.25Be_26.75非晶合金进行高温(～1.2T_g)较高速(～10⁰/s)下的压缩实验,分别采用虚应力模型和提出的Maxwell-Pulse本构模型进行了应力、应变关系的表征。结果表明:Zr₃₅Ti₃₀Cu_8.25Be_26.75非晶合金的流变行为具有较强的温度和应变速率敏感性,即随着温度的降低和应变速率的升高,非晶合金的流变应力单调增加,同时其变形行为由平衡态牛顿流变转变为非平衡态的非牛顿流变;对比实验数据和模型预测数据发现,虚应力模型拟合结果偏差较大,误差大于50%,而Maxwell-Pulse本构模型预测值与实验值一致性好,准确率在90%以上,说明Maxwell-Pulse本构模型不仅能够同时描述Zr₃₅Ti₃₀Cu_8.25Be_26.75非晶合金的牛顿流变和非牛顿流变现象,也能够准确地反映Zr₃₅Ti₃₀Cu_8.25Be_26.75非晶合金在高温和较高应变速率变形条件下的应力应变关系。     

Electrochemical characterizations of surface modified LiMn2O4 cathode materials for high temperature lithium battery applications

LiMn₂O₄ spinel cathode materials were coated with 2.0 wt.% of La₂O₃ by polymeric process followed by calcinations at 400 °C and 800 °C for 6 h in air. The surface coated LiMn₂O₄ cathode materials were physically characterized using X-ray diffraction, Scanning electron microscopy, Transmission electron microscopy and X-ray photoelectron spectroscopy. La₂O₃-coated LiMn₂O₄ coating did not affect the crystal structure and space group Fd3m of the cathode materials compared to the uncoated LiMn₂O₄. The surface morphology and particle agglomeration were investigated and compact coating layer on the surface of the core materials. La₂O₃ was completely coated over the surface of the LiMn₂O₄ core cathode materials. The galvanostatic charge and discharge of the La₂O₃-coated LiMn₂O₄ cathode materials were carried out at 0.1 mA/g in the range of 3.0 and 4.5 V at 30 °C and 60 °C. Based on the results, La₂O_3-coated spinel LiMn₂O₄ cathode at 800 °C has improved the structural stability, high reversible capacity and excellent electrochemical performances of the rechargeable lithium batteries.     

The study on electrical behavior of Gd2O3-WO3 complex ceramics at high temperature

Gd₂O₃-WO₃ complex ceramics are fabricated by the conventional solid-state reaction process. The electrical characteristics and dielectric properties of the samples were measured at various ambient temperatures in a low electric field (E < 150 V/mm). As the temperature increases, the dielectric constant and the loss tangent show an obvious change at about 50 °C and 330 °C. When the temperature is above 200 °C, the samples display stable nonlinear electrical properties characterized by semiconductivity, and the nonlinearity increases along with increasing temperature. XRD analysis reveals that Gd₂W₂O₉ is the main phase and Gd₂O₃ is the secondary phase. Based on the phase transition of tungsten trioxide, these electrical properties of Gd₂O₃-WO₃ complex ceramics can be simply explained.     

Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient

In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N₂ and O₂ ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi₂ and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N₂ ambient has smaller memory window and better retention characteristics than in O₂ ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory.     

Novel properties of AZO film sputtered in Ar+H2 ambient at high temperature

AZO (ZnO:Al) transparent conductive thin film was prepared by RF magnetron sputtering with a AZO (98 wt% ZnO 2 wt% Al₂O₃) ceramic target in the same Ar+H₂ ambient at different substrate temperatures ranging from 100 to 300 °C. The minimum resistivity of AZO films was 7.9×10⁻⁴ Ω cm at the substrate temperature of 200 °C. The average transmission in the visible rang was more than 90%. Scanning electron microscopy and XRD analyses showed that the surface morphology of the AZO samples altered with the increasing of the substrate temperature. AZO film prepared at 200 °C in the pure Ar ambient was also made as comparison about the resistivity, carrier concentration and the average crystallite size. The resistivity became about 3 times higher. The carrier concentration became lower and the average crystallite size was smaller.