基于相关度量的高椒盐噪声软阈值直方图滤波算法

利用图像邻域相关和直方图对椒盐噪声的鲁棒性,提出了一种针对高椒盐噪声图像的软阈值直方图加权滤波算法.对邻域灰度相关进行了量化分析,定义了灰度相关函数作为信号邻域相关性的度量,并将该系数作为直方图加权滤波算法的软阈值,根据像素被判定为噪声或有效信号的概率,自行调整滤波强度,减少图像滤波处理中的细节损失.仿真结果表明,对于高椒盐噪声图像,本算法在椒盐噪声滤除方面有良好的表现.     

红外图像噪声滤波对比度增强算法

针对红外图像噪声大、对比度低的特点,在传统直方图均衡原理的基础上,利用像素邻域高斯分布特征,介绍了一种基于噪声滤波的对比度增强算法.首先,计算原始图像统计直方图;其次,对统计直方图进行噪声滤波:最后.利用构造的加权函数对直方图间距进行均衡处理.改进的对比度增强算法避免了传统直方图均衡对灰度邻近、分布较少的灰度级进行合并,从而保留了图像细节信息.仿真实验表明:该算法在增强图像对比度的同时,有效保留了局部细节信息,具有一定的实用价值.     

红外图像的自适应混合双边滤波算法

针对红外图像中的混合噪声,提出了一种自适应混合双边滤波算法。首先对双边滤波原理进行了分析,提出不能滤除强高斯噪声和脉冲噪声是由于双边滤波引入灰度域权值而带来的固有不足,因此根据双边滤波算法的特点设置了一种像素间的相似度,并以该相似度为基础将双边滤波不能滤除的强噪声点进行了标记,仅对红外图像中标记出的强噪声点进行中值滤波以减少图像模糊,对普通噪声点采用灰度方差自适应双边滤波以保留更多边缘特征。自适应混合双边滤波能够有效滤除红外图像中的高斯噪声、脉冲噪声以及由其组成的混合噪声,同时在滤波过程中并不降低双边滤波保留红外图像边缘特征的性能。仿真实验结果表明,与传统双边滤波、改进的双边滤波以及各项异性扩散-中值滤波算法相比,该算法无论是滤除红外图像的混合噪声还是保留边缘特征都较为优越。     

基于改进型GIW算法的TerraSAR-X图像斑点噪声抑制

针对TerraSAR-X图像中的斑点噪声抑制问题,分析了噪声的基本数学模型,并考察了经典处理方法,进而结合Kuan滤波的基本思想,给出了一种改进型梯度倒数加权(GIW)滤波算法,利用邻域像素和中心像素的灰度梯度倒数及其邻域统计信息构造滤波加权模板,然后通过卷积操作实现斑点噪声的抑制。对TerraSAR-X图像处理的结果表明该算法原理简单,实现方便,可有效抑制图像中的斑点噪声,同时具有优良的边缘细节保持能力,非常适合边缘提取、目标检测等后续处理。     

一种基于极值的自适应均值滤波算法

图像增强过程中,如何在去除噪声的同时尽可能保留图像边缘细节非常重要.提出了一种基于极值的自适应均值滤波算法,该算法根据图像中某点的灰度值是否为邻域灰度极值将全部像素分为可疑噪声与信号两类,然后对可疑噪声点采用包括四个一维窗口和一个二维窗口在内的不同方向的五个子窗口分别计算均值,按照各个子窗口的均方差大小,自动选择窗口进行滤波,明显降低了普通均值滤波算法造成的模糊程度,使被误判的边缘像素点得到最大限度的保护.实验证明,该算法能在去除噪声的同时较好地保留边缘等细节信息,降低了图像处理后的模糊化程度,优于经典的邻域平均算法.     

改进邻域平均法在MRI图像去噪处理中的研究

对磁共振成像图像的去噪声处理是医学图像预处理中的重要环节。为了克服均值滤波算法不能兼顾去噪和保持图像边缘细节的不足,提出了改进邻域平均法。先根据相似者相容的原理得到待像素与各模板的关系,从而判断该像素是否为孤立噪声点。然后对孤立噪声点用灰度相近T邻域平均法进行处理,并对非孤立噪声点采用加权平滑模板进行处理。实验结果表明,该算法在去除噪声的同时,还保留了图像的边缘和细节。     

一种新型的中值滤波改进算法

针对传统中值滤波算法难以去除图像中高密度噪声的问题,本文提出了一种新型的改进中值滤波算法。该算法在保证其灰度值不变的前提下,对图像中的信号点和噪声点进行标识后进行噪声处理。仿真实验结果表明,相比于传统中值滤波、均值滤波,该算法能在有效去除噪声的同时很好地保留图像细节,具有更佳的视觉效果。     

一种高效去除椒盐噪声的中值滤波方法

提出了一种基于先检测、后滤波的椒盐噪声滤除算法．将像素值为0或255附近的像素点作为疑似噪声点,其余点为信号点．信号点不做任何处理,以保留更多的图像细节．而对于疑似噪声点,首先用改进的自适应极值中值方法进行噪声检测,并将检测结果记录在一个二值矩阵flag中,其中信号点记为1,噪声点记为0．然后根据图像像素值矩阵与flag的点积进行自适应中值滤波处理．实验结果表明,不仅对真实含噪图像处理有很强的适应性,而且对噪声密度高的图像,能在有效去除椒盐噪声的同时保护图像细节．在不同噪声率下均优于标准中值（SMF）滤波法及其一些改进方法,在噪声密度为10％～90％其峰值信噪比（PSNR）平均提高6dB．     

一种用于消除红外图像噪声的自适应加权滤波算法

针对带有高斯噪声和椒盐噪声两种混合噪声的红外图像,提出了一种自适应加权混合去噪算法。该算法首先通过邻域像素的灰度差值来判断像素噪声的类别,然后对高斯噪声采用自适应加权均值滤波法滤除,对椒盐噪声采用自适应加权中值滤波算法滤除。实验表明,该方法优于传统均值滤波算法和中值滤波算法,能同时消除混合噪声,并具有较好的保护图像细节的能力。     

一种基于极值的自适应中值滤波算法

图像平滑处理中,如何在去除噪声的同时完整地保留图像边缘细节一直是非线性滤波算法研究的热点问题。提出了一种基于极值的自适应中值滤波算法,该算法根据图像中某点是否为邻域极值点将全部像素分为可疑噪声与信号两类。对可疑噪声点采用包括八个一维窗口和一个二维窗口在内的不同尺度和不同方向的九个子窗口,按照各个子窗口的均方差大小,自适应选择窗口进行中值滤波;对信号点不加处理,灰度值不变。测试结果表明,该算法的滤噪特性和细节保护能力优于多级中值滤波;执行速度较快,优于经典中值滤波。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.