V4L2在TMS320DM8168高清视频监控系统中的实现

随着科技社会的发展,安防监控领域视频设备的高清化已成为新的发展趋势。采用TI最新推出的达芬奇单片系统TMS320DM8168,设计了一套高清视频监控系统。主要介绍了V4L2在该系统中的实现,主要包括视频接口设计、V4L2采集设备驱动开发和V4L2采集应用程序设计等内容。测试结果表明该系统中实现的V4L2驱动和应用程序能够为DM8168高清视频监控系统提供高清视频数据,具有良好的可靠性和稳定性。     

基于Linux平台的OV2715驱动研究与实现

为了实现嵌入式Linux对CMOS图像传感器OV2715的支持,对OV2715的工作原理进行深入的研究,针对OV2715功能复杂和驱动编写困难的问题,提出一种模块化设计OV2715驱动的方法。在DM3730硬件平台下,将OV2715驱动分为I2C设备驱动和V4L2接口驱动并分别进行了实现,最后,设计视频采集程序并对驱动进行了测试。测试结果表明,输出视频图像质量清晰稳定,该实现在高清数字监控系统中有较好的应用前景。     

基于DM6467T的高清摄像头驱动设计

为满足高清视频监控的需求,针对目前raw格式传感器的驱动支持尚不完善的问题。文中基于TI公司的DM6467T芯片硬件平台,利用芯片提供的VPIF接口,对高清摄像头进行驱动程序的设计。分析了V4L2驱动结构,并分别对V4L2核心驱动、VPIF接口驱动以及传感器驱动进行修改及设计。编写了驱动测试程序,实验结果表明,该设计能成功采集到raw格式的图像数据,对同类传感器驱动设计具有一定参考价值。     

基于TMS320DM355的网络高清视频监控系统的设计与实现

介绍了一种基于嵌入式Linux和TMS320DM355处理器平台的视频网络监控系统的设计与实现.该系统可根据需要,选择采集来自于VGA接口或者摄像头的视频数据,利用嵌入式Linux操作系统的V4L2(视频设备的内核驱动),编写驱动程序,进而实现视频的采集.经MPEG-4压缩算法对采集到的视频流进行压缩编码后,通过实时传输协议(RTP)和实时传输控制协议(RTCP)实现编码的视频数据流在网络的传输.     

基于TMS320DM8168的嵌入式高清视频系统

以TI公司的TMS320DM8168处理器为核心,实现高清视频采集回放系统。设计一种文件管理策略,将视频文件的时间数据和图像数据分离,提高了文件播放的效率。解决了高清视频的实时压缩存储解码回放问题。     

基于DM8168的高清视频智能分析系统设计与实现

为了实现高清视频的智能分析功能,设计了一种以TI公司的DM8168为核心的高清视频智能分析系统,从硬件设计和软件设计两个方面介绍了硬件组成、工作流程、软件架构,并详细描述智能分析算法的构成、实现和优化。该高清视频智能分析系统能实现对复杂场景的昼夜不间断监控,具有架构简单、可靠性高、误报警率低等特点。     

基于B/S架构实时高清音视频监控系统

高清视频监控画面范围广同时产生巨大数据使得在网络传输中造成时延,也存在音频数据有限的问题。针对上述问题,文中设计一种基于B/S架构的实时高清音视频监控系统。USB摄像头基于V4L2接口采集图像,基于ALSA声卡驱动采集音频,结合H.265视频编解码技术和FAAC音频编码技术,以RTP协议打包封装H.265视频码流和AAC音频码流经网络同步传输到Web服务器,利用CGI,JavaScrict技术实现多种智能终端登录浏览器显示监控画面。经测试该监控系统画面清晰无抖动,音视频吻合效果明显满足实验要求。     

嵌入式Linux视频采集系统设计与研究

v4L2(Video For Linux Two)是Linux系统下进行图像、视频开发的应用编程接口。本文首先分析V4L2的图像采集驱动和流程,然后在Linux环境下设计并实现视频采集终端程序设计,并在天嵌S3C2440的ARM板开发平台上移植嵌入式视频采集终端。与此同时,还在ARM开发板上实现实时动态采集视频图像的播放。本文对视频采集的设计方法和监控系统的后端处理具有实用价值。     

智能家居监控系统USB摄像头驱动的开发与实现

该文介绍了智能家居监控系统视频数据采集模块的设计与实现。对USB总线技术进行了介绍,设计基于USB2.0接口技术的视频采集模块。进行了Linux操作系统下USB摄像头驱动程序设计;分析USB接口驱动及V4L2视频采集驱动框架的工作原理;最后在Linux操作系统下成功完成移植与调试。     

基于TMS320DM6467的高清晰视频接口的硬件设计

以TI公司基于达芬奇技术的媒体处理器TMS320DM6467作为核心处理器。该设计根据TMS320DM6467内部的高清模块与VPIF视频接口,采用高清视频解码器TVP7002与高清/标清视频编码器ADV7343,设计出了高清视频信号的输入与输出系统,实现了对高清视频的监控与采集。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.