X射线激光Nd,Dy,Er和Yb薄膜靶表面氧化过程的石英晶振方？…

用电子束蒸发方法在抛光玻璃衬底上分别制备了Ｘ射线激光用的稀土元素Ｎｄ，Ｄｙ，Ｅｒ、Ｙｂ薄靶。用石英昌片作为陪片，通过测量昌振频率的方法研究了薄膜靶在真空、干燥空气潮湿空气等不同环境中不同阶段的氧化层增长过程。发现除Ｙｂ薄膜在淀积结束后的干燥空气和潮湿空气环境中的氧化过程遵循倒对数规律之外，民有的氧化过程均可用对数规律很好地进行拟合。淀积结束后充入大气时，薄膜表面的快速氧化过程仅为数分钟。在相同的环     

(Ph,La)TiO_3铁电薄膜的表面态分析

利用（Ｐｈ,Ｌａ）ＴｉＯ３陶瓷靶材,采用射频磁控溅射技术室温淀积,其后在６００℃下退火,制备ＰＬＴ铁电薄膜。通过对薄膜进行ＸＰＳ和ＥＤＡＸ分析,发现薄膜表面富钛。与利用其它工艺技术如多离子束反应共溅射、ｓｏｌ－ｇｅｌ等技术制备的ＰＬＴ铁电薄膜进行对比可以看出,利用不同技术制备的铁电薄膜,具有不同的表面态。     

陶瓷衬底上淀积薄膜α－Fe_2O_3材料的微结构和气敏特性研究

本文用常压化学气相淀积（ＡＰＣＶＤ）工艺在陶瓷衬底上成功地制备出了具有超微粒结构的α－Ｆｅ_２Ｏ_３气敏薄膜．对所制备的薄膜进行了Ｘ射线衍射分析和扫描电子显微分析（ＳＥＭ）．研究了淀积工艺条件对α－Ｆｅ_２Ｏ_３薄膜的粒度的影响．气敏特性研究表明，用ＡＰＣＶＤＩ艺制备的超微粒α－Ｆｅ_２Ｏ_３薄膜对烟雾呈现出很高的灵敏度和良好的选择性，这种薄膜可用于感烟探测器．     

PECVD法淀积氟碳掺杂的氧化硅薄膜表征

以正硅酸乙酯（ＴＥＯＳ）和八氟环丁烷（Ｃ４Ｆ８）为原料,采用等离子体增强化学气相淀积（ＰＥＣＶＤ）方法制备了氟碳掺杂的氧化硅薄膜（ＳｉＣＯＦ）．样品的Ｘ射线光电子能谱（ＸＰＳ）和傅立叶变换红外光谱（ＦＴＩＲ）分析表明薄膜中含有Ｓｉ－Ｆ、Ｓｉ－Ｏ、Ｃ－Ｆ、Ｃ－ＣＦ_ｘ、ＣＦ₂等构型．刚淀积的薄膜的折射率约为１．４０．对暴露在空气中以及在不同温度下退火后薄膜的折射率做了测量,并对其变化机理进行了讨论,同时表明了理想的淀积温度应是３００℃．     

制备条件对电致变色氧化镍薄膜特性的影响

在充氧气的真空室内 ,用电子束蒸发NiO粉末颗粒的方法分别以 0 1和 0 8nm/s的淀积速率制备了氧化镍薄膜 ,并在不同的环境中对薄膜进行热处理。研究了薄膜结构和电致变色特性与淀积速率的关系 ,发现以较慢和较快速率淀积的薄膜分别具有NiO晶粒的 (2 0 0 )和 (111)不同择优取向 ,前者致色范围较小 ,后者致色范围较大。还研究了热处理对薄膜的结构、动态致色范围、致色效率 ,以及红外光谱特性的影响 ,发现热处理对薄膜的致色效率影响较小 ,然而对动态致色范围的影响很大。     

在硅片上制备SnO_2敏感膜

本文介绍采用真空蒸镀与低温氧化相结合的工艺,在生长有氧化层的硅片上利用金属Sn制备SnO_2敏感膜。它较化学气相淀积法易于控制,并可充分利用硅平面工艺生产线现有设备,所制备的SnO_2敏感膜经扫描电镜形貌分析,其粒径小于1μm,且对乙醇,甲烷都有一定的敏感性。到目前为止,制备SnO_2敏感膜的方法有:高频溅射,直流溅射,化学气相淀积,高频等离子激活化学气相淀积,真空蒸镀等。这些方法主要是用锡的氧化物和锡盐将SnO_2膜制作在绝缘衬底(Al_2O_3)上。众所周知,采用溅射方法需要昂贵的设备,而化学气相淀积法(CVD)所需工艺参数较多,难于控制,且对环境要求较严,而我们采用的真空蒸镀同低温氧化相结合的方法,工艺参数较少,对环境要求不象CVD那样严格,更主要的是可以利用硅平面工艺生产线现有设备制成厚度均匀,粒径合适,对某些气体和湿度都灵敏的敏感膜。     

X射线激光Nd，Dy,Er和Yb薄膜靶表面氧化过程的石英晶振方法研究

用电子束蒸发方法在抛光玻璃衬底上分别制备了X射线激光用的稀土元素Nd ,Dy ,Er和Yb薄膜靶。用石英晶片作为陪片 ,通过测量晶振频率的方法研究了薄膜靶在真空、干燥空气及潮湿空气等不同环境中不同阶段的氧化层增长过程。发现除Yb薄膜在淀积结束后的干燥空气和潮湿空气环境中的氧化过程遵循倒对数规律之外 ,其它所有的氧化过程均可用对数规律很好地进行拟合。淀积结束后充入大气时 ,薄膜表面的快速氧化过程仅为数分钟。在相同的环境中 ,Nd氧化速率最高 ,Er和Dy其次 ,Yb最低 ;在不同的环境中 ,Nd受环境湿度的影响最大 ,Er和Dy其次 ,Yb最低。     

清洗用氟化气体材料的开发

清洗用氟化气体材料的开发近年来，以半导体的高集成化为代表的电子工业在技术革新方面取得了显著的成绩，其中新材料的使用和新技术的产生是该领域得以发展的关键。在半导体制造业中，化学汽相淀积（ＣＶＤ）和物理汽相淀积（ＰＶＤ）等等薄膜制备技术是必不可少的。在用...     

永磁微波ECR等离子体CVD低温淀积SiNx薄膜

发展了永磁微波ＥＣＲ等离子体ＣＶＤ低温淀积氮化硅薄膜的技术，在低于６０℃的基片温度下，制备了低含氢量的优质纳米非晶ＳｉＮｘ膜     

分子束外延技术及其进展

由于高频、高速光电子器件发展的需要,器件工作层的厚度及尺寸愈来愈小,已经较成熟的液相外延、汽相外延、真空淀积等薄膜制备方法已不能满足要求。许多新发展起来的多层异质器件,在某些场合希望组分和掺杂有较陡的分布,在另些场合又希望组分和掺杂按某一函数     

Atomic Layer Deposition

Atomic layer deposition, ALd, is a thin film deposition technology that enables new and highly competitive products. As a disruptive technology, it can often replace existing production technology and improve throughput, coating quality and sometimes process sustainability. ALd is also a powerful resource for advanced nanotechnology research. Today's industrial applications of ALd habitually address a concrete requirement to manufacture precise nanometer–thick, dense and pinhole–free conformal thin films of exact chemical composition on various shapes and geometries. For today's businesses, ALd and Beneq offer the necessary tools to enable growth, by means of new and innovative applications, reliable production equipment and attractive cost of ownership.     

等离子体增强化学气相沉积设备的研制

本文介绍非晶硅薄膜太阳能电池生产线的核心设备——等离子体增强化学气相沉积(PECVD, Plasma Enhanced Chemical Vapor Deposition)系统,并阐述了其重要地位.非晶硅太阳能电池制造的关键技术是非晶硅薄膜的制备,目前最常见的制备方法是PECVD技术.PECVD技术凭借其低温沉积、可大面积成膜、成膜均匀等特点,在非晶硅薄膜制备方面迅速发展.PECVD系统用于制备非晶硅太阳能电池的关键结构P、I、N硅薄膜层.本文阐述了该设备的结构特点、技术指标、工作原理及工艺过程,对沉积室的结构和配置进行了详细设计计算,非晶硅太阳能电池稳定后的转化效率可达6％.     

UV‐Lasertechnologie in der PLD

Future of UV Lasertechnology in industrial PLD processes The success formula for any thin film technology on the production floor is bridging the gap between precisely depositing a functional thin film and at the same time achieving industrial processing rates. Fortunately, the pulsed laser deposition method has come of age thanks to output power and stability advances in UV excimer laser technology and has become a proven and industrial grade thin film deposition method.     

Abscheidung optisch,elektrisch und akustisch wirksamer Schichten mit dem Doppel‐Ring‐Magnetron

Numerous applications in optics, electronics and sensor technology require thin dielectric films. Conventionally they are deposited by evaporation, activated evaporation, rf‐sputtering or CVD‐techniques. This paper describes the deposition of such films using reactive Pulse Magnetron Sputtering. This technology not only enables a tenfold deposition rate compared to the conventional techniques but also offers new possibilities for influencing film growth. For example it is possible to alter film composition during deposition and hence to deposit complete optical systems without interruption of the plasma process. Furthermore the energetic bombardment of the growing film can be controlled in a wide range by the pulse mode and the pulse parameters. This can be used to either deposit very dense films by strong energetic bombardment or to deposit films at low thermal load onto temperature sensitive substrates. Examples of film deposition for laser optics, electrical insulation applications and surface acoustic wave devices show how these new technological possibilities advantageously can be used for creating innovative layer systems. Film deposition is carried out in stationary mode using a Double Ring Magnetron. This type of magnetron ensures film thickness uniformity better than ± 1 % on 8” substrates by the superposition of the thickness distributions of two concentric discharges.     

等离子体显示器件中氧化镁膜的制备和测试

等离子体显示器（PDP）是最有发展前景的新一代显示器件，MgO膜是其制造工艺中的一个瓶颈。本文结合PDP的发展，综述了近年来MgO膜层镀制与测试工艺的进展，讨论了PDP对保护膜性能的要求。PDP市场的进一步扩大亟需在生产上建立一个能取得共识的对MgO膜层性能进行评价的标准。     

原子层沉积技术及其创新运用

本文分析并总结了涉及原子层沉积(atomic layer deposition,ALD)技术基本原理的若干问题.介绍了等离子增强原子层沉积(plasma enhanced atomic layer deposition,PEALD)技术的优势及常见运用.相对于传统ALD系统,PEALD最大的特点在于其能够通过等离子体放电来活化前驱体源,提高对前驱体源,尤其是气态源的利用.利用PEALD这一特点可以增加传统ALD技术中可用氮源的种类.同时PEALD原位掺杂作为一种掺杂方法能够用于对光催化材料的掺杂改性,提高其光催化性能.此外,PEALD技术还适用于温度敏感材料和柔性材料上的薄膜沉积,可以获得更低的电阻率和更高的薄膜密度等.本文重点介绍了本课题组提出的PEALD原位掺杂技术及其对TiO2光催化剂的掺杂改性运用.最后对原位掺杂技术的研究方向和发展进行了展望.     

TiO2功能薄膜的制备及影响其光催化活性的因素

近些年来，TiO2功能薄膜以其卓越的性能，尤其是优异的光催化性能引起研究人员的广泛关注，本文根据国内外近期TiO2功能薄膜的研究现状，对化学气相沉积法，水解一沉淀法，液相沉积法，溶胶－凝胶法，原子层沉积法，溅射法，激光辅助分子束沉积法等化学和物理制备方法进行评述，并比较详细地探讨了表面羟基含量，膜的厚度和孔径，结晶形态，基片种类，掺杂和光强度等因素对TiO2薄膜光催化性能的影响。     

ZnS:Mn沉积温度对薄膜电致发光器件亮度的影响

采用丝网印刷技术,在Al2O3陶瓷基板上印刷、高温烧结内电极及绝缘层,制备出陶瓷厚膜基板,进而制备了新型厚膜电致发光显示器(TDEL).整个器件结构为陶瓷基板/内电极/厚膜绝缘层/发光层/薄膜绝缘层/ITO透明电极.研究不同基板沉积温度对发光层性能的影响,并对器件的亮度-电压、亮度-频率进行测量.结果显示较高的ZnS:Mn沉积温度明显提高了无机发光器件的发光亮度.其原因主要是由于高的沉积温度提高了ZnS:Mn的成膜质量,提高膜层微晶尺寸大小,从而发光亮度提高.但是我们发现温度继续提高的同时,器件发光亮度趋于饱和,分析原因是由于掺杂Mn浓度过高,影响了发光效果.     

Dünnschichtsolarzellen

Thin Film Solar Cells The direct conversion of sunlight into electricity — photovoltaics (PV) — has emerged as a strongly growing market during the past years. Today, more than 80 % of the world market is supplied by solar modules based on mono‐ or polycrystalline silicon wafers. Thin‐film solar cells promise significantly lower costs for photovoltaic energy conversion, and thus will probably dominate the PV‐market in the future. Consequently, the production of thin film solar cells will lead to key technologies of the 21^st century. This article addresses the three most advanced types of thin‐film cells describing the status of these technologies at the laboratory level, in pilot production, and in first production lines. The challenges along the way from laboratory developments towards mass production are discussed, fo cusing on the central role of the vacuum‐based technologies applied for thin film deposition.     

Flexible cadmium telluride/cadmium sulphide thin film solar cells on mica substrate

Polycrystalline thin film II–VI compound semiconductors of cadmium sulfide (CdS) and cadmium telluride (CdTe) are the leading materials for the development of cost effective and reliable photovoltaic systems. The two important properties of these materials are its nearness to the ideal band gap for photovoltaic conversion efficiency and they have high optical absorption coefficients. Usually thin film solar cells are made by hetero-junction of p-type CdTe with n-type CdS partner window layer. In this article, we have deposited CdTe films on mica substrates using thermal evaporation technique and CdTe/CdS junction were developed by depositing a thin layer of CdS on to the CdTe substrate from chemical bath deposition method. The device was characterized by current voltage and photocurrent spectroscopy technique prior to the deposition of the transparent conducting layer. The devices were annealed in air at different temperatures and found that the device annealed at 673?K had better photovoltaic parameters. The efficiency of a typical device under 50?mW?cm^?2 illumination was estimated as 4%.