Polymer nanowire vertical transistors

By utilizing poly（3-hexylthiophene） （P3HT） polymer nanowires with diameters of -15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V.     

Ultraviolet photoconductance of a single hexagonal WO3 nanowire

The ultraviolet (UV) photoconductance properties of a single hexagonal WO₃ nanowire have been studied systematically. The conductance of WO₃ nanowires is very sensitive to ultraviolet B light and a field-effect transistor (FET) nanodevice incorporating a single WO₃ nanowire exhibits excellent sensitivity, reversibility, and wavelength selectivity. A high photoconductivity gain suggests that WO₃ nanowires can be used as the sensing element for UV photodetectors. Measurements under UV light in vacuum show that the adsorption and desorption of oxygen molecules on the surface of the WO₃ nanowire can significantly influence its photoelectrical properties. The WO₃ nanowires have potential applications in biological sensors, optoelectronic devices, optical memory, and other areas.      

Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

Position controlled nanowire growth is important for nanowire-based optoelectronic components which rely on light emission or light absorption. For solar energy harvesting applications, dense arrays of nanowires are needed; however, a major obstacle to obtaining dense nanowire arrays is seed particle displacement and coalescing during the annealing stage prior to nanowire growth. Here, we explore three different strategies to improve pattern preservation of large-area catalyst particle arrays defined by nanoimprint lithography for nanowire growth. First, we see that heat treating the growth substrate prior to nanoimprint lithography improves pattern preservation. Second, we explore the possibility of improving pattern preservation by fixing the seed particles in place prior to annealing by modifying the growth procedure. And third, we show that a SiN _x growth mask can fully prevent seed particle displacement. We show how these strategies allow us to greatly improve the pattern fidelity of grown InP nanowire arrays with dimensions suitable for solar cell applications, ultimately achieving 100% pattern preservation over the sampled area. The generic nature of these strategies is supported through the synthesis of GaAs and GaP nanowires.

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Repair and stabilization in confined nanoscale systems — inorganic nanowires within single-walled carbon nanotubes

Repair is ubiquitous in biological systems, but rare in the inorganic world. We show that inorganic nanoscale systems can however possess remarkable repair and reconfiguring capabilities when subjected to extreme confinement. Confined crystallization inside single-walled carbon nanotube (SWCNT) templates is known to produce the narrowest inorganic nanowires, but little is known about the potential for repair of such nanowires once crystallized, and what can drive it. Here inorganic nanowires encapsulated within SWCNTs were seen by high-resolution transmission electron microscopy to adjust to changes in their nanotube template through atomic rearrangement at room temperature. These observations highlight nanowire repair processes, supported by theoretical modeling, that are consistent with atomic migration at fractured, ionic ends of the nanowires encouraged by long-range force fields, as well as release-blocking mechanisms where nanowire atoms bind to nanotube walls to stabilize the ruptured nanotube and allow the nanowire to reform. Such principles can inform the design of nanoscale systems with enhanced resilience.      

Cotunneling transport in ultra-narrow gold nanowire bundles

We investigate the charge transport in close-packed ultra-narrow （1.5 nm diameter） gold nanowires stabilized by oleylamine ligands. We give evidence of charging effects in the weakly coupled one-dimensional （1D） nanowires, monitored by the temperature and the bias voltage. At low temperature, in the Coulomb blockade regime, the current flow reveals an original cooperative multi-hopping process between 1D-segments of Au-NWs, minimising the charging energy cost. Above the Coulomb blockade threshold voltage and at high temperature, the charge transport evolves into a sequential tunneling regime between the nearest- nanowires. Our analysis shows that the effective length of the Au-NWs inside the bundle is similar to the 1D localisation length of the electronic wave function （of the order of 120 nm _＋ 20 nm）, but almost two orders of magnitude larger than the diameter of the nanowire. This result confirms the high structural quality of the Au-NW segments.     

A comparative study of the effect of gold seed particle preparation method on nanowire growth

Highly controlled particle-assisted growth of semiconductor nanowires has been performed for many years, and a number of novel nanowire-based devices have been demonstrated. Full control of the epitaxial growth is required to optimize the performance of devices, and gold seed particles are known to provide the most controlled growth. Successful nanowire growth from gold particles generated and deposited by various different methods has been reported, but no investigation has yet been performed to compare the effects of gold particle generation and deposition methods on nanowire growth. In this article we present a direct comparative study of the effect of the gold particle creation and deposition methods on nanowire growth characteristics and nanowire crystal structure, and investigate the limitations of the different generation and deposition methods used.      

Parallel arrays of Schottky barrier nanowire field effect transistors: Nanoscopic effects for macroscopic current output

We present novel Schottky barrier field effect transistors consisting of a parallel array of bottom-up grown silicon nanowires that are able to deliver high current outputs. Axial silicidation of the nanowires is used to create defined Schottky junctions leading to on/off current ratios of up to 10⁶. The device concept leverages the unique transport properties of nanoscale junctions to boost device performance for macroscopic applications. Using parallel arrays, on-currents of over 500 μA at a source-drain voltage of 0.5 V can be achieved. The transconductance is thus increased significantly while maintaining the transfer characteristics of single nanowire devices. By incorporating several hundred nanowires into the parallel array, the yield of functioning transistors is dramatically increased and deviceto-device variability is reduced compared to single devices. This new nanowirebased platform provides sufficient current output to be employed as a transducer for biosensors or a driving stage for organic light-emitting diodes (LEDs), while the bottom-up nature of the fabrication procedure means it can provide building blocks for novel printable electronic devices.      

Optical haze of transparent and conductive silver nanowire films

Contemporary nanostructured transparent electrodes for use in solar cells require high transmittance and high conductivity, dictating nanostructures with high aspect ratios. Optical haze is an equally important yet unstudied parameter in transparent electrodes for solar cells that is also determined by the geometry of the nanostructures that compose the electrode. In this work, the effect of the silver nanowire diameter on the optical haze values in the visible spectrum was investigated using films composed of wires with either small diameters (～60 nm) or large diameters (～150 nm). Finite difference time domain (FDTD) simulations and experimental transmittance data confirm that smaller diameter nanowires form higher performing transparent conducting electrode (TCE) films according to the current figure of merit. While maintaining near constant transmittance and conductivity for each film, however, it was observed experimentally that films composed of silver nanowires with larger diameters have a higher haze factor than films with smaller diameters. This confirms the FDTD simulations of the haze factor for single nanowires with similarly large and small diameters. This is the first record of haze properties for Ag NWs that have been simulated or experimentally measured, and also the first evidence that the current figure of merit for TCEs is insufficient to evaluate their performance in solar cell devices.      

Activating ZnO nanorod photoanodes in visible light by Cu ion implantation

Utilization of visible light is of crucial importance for exploiting efficient semiconductor catalysts for solar water splitting. In this study, an advanced ion implantation method was utilized to dope Cu ions into ZnO nanorod arrays for photoelectrochemical water splitting in visible light. X-ray diffraction （XRD） and X-ray photo-electron spectroscopy （XPS） results revealed that Cu^＋ together with a small amount of Cu^2＋ were highly dispersed within the ZnO nanorod arrays. The Cu ion doped ZnO nanorod arrays displayed extended optical absorption and enhanced photoelectrochemical performance under visible light illumination （A 〉 420 nm）. A considerable photocurrent density of 18 μA/cm^2 at 0.8 V （vs. a saturated calomel electrode） was achieved, which was about 11 times higher than that of undoped ZnO nanorod arrays. This study proposes that ion implantation could be an effective approach for developing novel visible-light-driven photocatalytic materials for water splitting.     

GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence

In this report we explore the structural and optical properties of GaAs/A1GaAs heterostructure nanowires grown by metalorganic vapour phase epitaxy using gold seed-particles. The optical studies were done by low-temperature cathodo- luminescence （CL） in a scanning electron microscope （SEM）. We perform a systematic investigation of how the nanowire growth-temperature affects the total photon emission, and variations in the emission energy and intensity along the length of the nanowires. The morphology and crystal structures of the nanowires were investigated using SEM and transmission electron microscopy （TEM）. In order to correlate specific photon emission characteristics with variations in the nanowire crystal structure directly, TEM and spatially resolved CL measurements were performed on the same individual nanowires. We found that the main emission energy was located at around 1.48 eV, and that the emission intensity was greatly enhanced when increasing the GaAs nanowire core growth temperature. The data strongly suggests that this emission energy is related to rotational twins in the GaAs nanowire core. Our measurements also show that radial overgrowth by GaAs on the GaAs nanowire core can have a deteriorating effect on the optical quality of the nanowires. Finally, we conclude that an in situ pre-growth annealing step at a sufficiently high temperature significantly improves the optical quality of the nanowires.     

Growth of silicon nanowires in aqueous solution under atmospheric pressure

A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.     

Schottky barrier-based silicon nanowire pH sensor with live sensitivity control

We demonstrate a pH sensor based on ultrasensitive nanosize Schottky junctions formed within bottom-up grown dopant-flee arrays of assembled silicon nanowires. A new measurement concept relying on a continuous gate sweep is presented, which allows the straightforward determination of the point of maximum sensitivity of the device and allows sensing experiments to be performed in the optimum regime. Integration of devices into a portable fluidic system and an electrode isolation strategy affords a stable environment and enables long time robust FET sensing measurements in a liquid environment to be carried out. Investigations of the physical and chemical sensitivity of our devices at different pH values and a comparison with theoretical limits are also discussed. We believe that such a combination of nanofabrication and engineering advances makes this Schottky barrier-powered silicon nanowire lab-on-a-chip platform suitable for efficient biodetection and even for more complex biochemical analysis.     

Large-energy-shift photon upconversion in degenerately doped InP nanowires by direct excitation into the electron gas

Realizing photon upconversion in nanostructures is important for many next- generation applications such as biological labelling, infrared detectors and solar cells. In particular nanowires are attractive for optoelectronics because they can easily be electrically contacted. Here we demonstrate photon upconversion with a large energy shift in highly n-doped InP nanowires. Crucially, the mechanism responsible for the upconversion in our system does not rely on multi-photon absorption via intermediate states, thus eliminating the need for high photon fluxes to achieve upconversion. The demonstrated upconversion paves the way for utilizing nanowires--with their inherent flexibility such as electrical contactability and the ability to position individual nanowires--for photon upconversion devices also at low photon fluxes, possibly down to the single photon level in optimised structures.     

Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties

Large-area patterned boron carbide nanowires (B₄C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B₄C NWs is about 50 nm, with a mean length of 20 ??m. The B₄C NWs have a single-crystal structure and conductivities around 5.1 × 10^?2 ??^?1·cm^?1. Field emission measurements of patterned B₄C NWs films show that their turn-on electric field is 2.7 V/??m, lower than that of continuous B₄C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B₄C NWs are a promising candidate for flexible cold cathode materials.      

Bottom-up synthesis of ultrathin straight platinum nanowires: Electric field impact

We present a study of the electric field effect on electrochemically grown ultrathin, straight platinum nanowires with minimum diameter of 15 nm and length in the micrometer range, synthesized on a silicon oxide substrate between metal electrodes in H₂PtCl₆ solution. The influence of the concentration of the platinumcontaining acid and the frequency of the applied voltage on the diameter of the nanowires is discussed with a corresponding theoretical analysis. We demonstrate for the first time that the electric field profile, provided by the specific geometry of the metal electrodes, dramatically influences the growth and morphology of the nanowires. Finally, we provide guidelines for the controlled fabrication and contacting of straight, ultrathin metal wires, eliminating branching and dendritic growth, which is one of the main shortcomings of the current bottom-up nanotechnology. The proposed concept of self-assembly of thin nanowires, influenced by the electric field, potentially represents a new route for guided nanocontacting via smart design of the electrode geometry. The possible applications reach from nanoelectronics to gas sensors and biosensors.      

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.      

Structural and optical verification of residual strain effect in single crystalline CdTe nanowires

Single crystalline CdTe nanowires have been synthesized using Au-catalyzed chemical vapor deposition. X-ray diffraction reveals the existence of non- negligible inhomogeneous compressive strain in the nanowires along the 〈111〉 growth direction. The effect of the strain on the electronic structure is manifested by the blue-shifted and broadened photoluminescence spectra involving shallow donor/acceptor states. Such residual strain is of great importance for a better understanding of the optical and electrical behaviors of various semiconductor nanomaterials as well as for device design and applications.     

Linear strain-gradient effect on the energy bandgap in bent CdS nanowires

Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear strain-gradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics.      

Silver nanowires with semiconducting ligands for low-temperature transparent conductors

Metal nanowire networks represent a promising candidate for the rapid fabrication of transparent electrodes with high transmission and low sheet-resistance values at very low deposition temperatures. A commonly encountered challenge in the formation of conductive nanowire electrodes is establishing high-quality electronic contact between nanowires to facilitate long-range current transport through the network. A new system involving nanowire ligand removal and replacement with a semiconducting sol-gel tin oxide matrix has enabled the fabrication of high-performance transparent electrodes at dramatically reduced temperatures with minimal need for post-deposition treatment.

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