On crack path stability in a layered material

Crack paths in an elastic layer on top of a substrate are considered. Crack growth is initiated from an edge crack in the layer. The plane of the initially straight crack forms an angle to the free surface. The load consists of a pair of forces applied at the crack mouth and parallel to the interface. Crack paths are calculated using a boundary element method. Crack growth is assumed to proceed along a path for which the mode II stress intensity factor vanishes. The inclination and the length of the initial crack are varied. The effect of two different substrates on the crack path evolution is demonstrated. A crack path initially leading perpendicularly to the interface is shown to be directionally unstable for a rigid substrate. Irrespective of its initial angle, the crack does not reach the interface, but reaches the free surface if the layer is infinitely long. At finite layer length the crack reaches the upper free surface if the initial crack inclination to the surface is small enough. For an inextendable flexible substrate, on the other hand, the crack reaches the interface if its initial inclination is large enough. For the flexible substrate an unstable path parallel with the sides of an infinitely long layer is identified. The results are compared with experimental results and discussed in view of characterisation of directionally unstable crack paths. The energy release rate for an inclined edge crack is determined analytically.     

A study of Si epitaxial layer growth on SOI wafers prepared by SIMOX

The epitaxial Si layers were deposited onto silicon on insulator (SOI) substrates by chemical vapor deposition technology, and SOI substrates were manufactured with separation by implantation of oxygen technology. The dislocations and stacking faults of epitaxial Si layer and substrate were examined and their densities were calculated, respectively. The surfaces of epitaxial Si layer and SOI substrate were studied by atomic force microscopy. The SOI substrates and the epitaxial Si layers were characterized by Rutherford backscattering and channeling spectroscopy. Transmission electron microscopy was used to observe the defect in epitaxial layer. The result shows that the defects in the epitaxial Si layer on low dose substrate are less than those in the epitaxial Si layer on standard dose substrate, and also that the defects in low dose substrate are less than those in standard dose substrate. The crystallinity of epitaxial Si layer on low dose substrate is better than that of epitaxial Si layer on standard dose substrate.     

The critical layer number of Stranski-Krastanov growth mode epitaxial growth for bcc metallic thin films

Based on the classical elastic theory and a thermodynamic model for surface energy, the critical layer number n_c of Stranski-Krastanov growth mode epitaxial growth for bcc metallic thin films is calculated. n_c is determined by the consideration that the sum of the surface energy of a film and the lattice mismatch elastic energy between a substrate and the film is equal to the surface energy of the substrate. When the film layer number n is larger than n_c, a flat growth of the film on the substrate will transform to an island growth. Our predictions on several metallic films are in agreement with experimental results.     

Layer‐by‐Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrate

The electronic properties of graphene can be efficiently altered upon interaction with the underlying substrate resulting in a dramatic change of charge carrier behavior. Here, the evolution of the local electronic properties of epitaxial graphene on a metal upon the controlled formation of multilayers, which are produced by intercalation of atomic carbon in graphene/Ir(111), is investigated. Using scanning tunneling microscopy and Landau‐level spectroscopy, it is shown that for a monolayer and bilayers with small‐angle rotations, Landau levels are fully suppressed, indicating that the metal–graphene interaction is largely confined to the first graphene layer. Bilayers with large twist angles as well as twisted trilayers demonstrate a sequence of pronounced Landau levels characteristic for a free‐standing graphene monolayer pointing toward an effective decoupling of the top layer from the metal substrate. These findings give evidence for the controlled preparation of epitaxial graphene multilayers with a different degree of decoupling, which represent an ideal platform for future electronic and spintronic applications.     

Surface morphology of low temperature grown GaAs on singular and vicinal substrates

The evolution of the surface morphology of epitaxial GaAs layers grown at low substrate temperatures (LT-GaAs) on singular and vicinal (001) GaAs substrates is studied by means of kinetic Monte-Carlo simulations. The simulation model includes the effects of Ehrlich–Schwoebel barriers at step-edges as well as anisotropic surface diffusion. We find that the surface morphology is dominated by a pattern of elongated growth mounds, which are organized into columns parallel to [1̄10]. The formation of this pattern is gradually suppressed on vicinal substrates as the misorientation angle increases. Simulated surface morphologies are compared to atomic force microscopy measurements on LT-GaAs epilayers grown on singular GaAs(001) substrates at different temperatures and good quantitative agreement is found. We propose to use vicinal substrates for LT-GaAs growth in order to overcome the known problem of epitaxial breakdown above a certain epitaxial thickness.     

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

The effects of Pb intercalation on the structural and electronic properties of epitaxial single‐layer graphene grown on SiC(0001) substrate are investigated using scanning tunneling microscopy (STM), noncontact atomic force microscopy, Kelvin probe force microscopy (KPFM), X‐ray photoelectron spectroscopy, and angle‐resolved photoemission spectroscopy (ARPES) methods. The STM results show the formation of an ordered moiré superstructure pattern induced by Pb atom intercalation underneath the graphene layer. ARPES measurements reveal the presence of two additional linearly dispersing π‐bands, providing evidence for the decoupling of the buffer layer from the underlying SiC substrate. Upon Pb intercalation, the Si 2p core level spectra show a signature for the existence of Pb? Si chemical bonds at the interface region, as manifested in a shift of 1.2 eV of the bulk SiC component toward lower binding energies. The Pb intercalation gives rise to hole‐doping of graphene and results in a shift of the Dirac point energy by about 0.1 eV above the Fermi level, as revealed by the ARPES measurements. The KPFM experiments have shown that decoupling of the graphene layer by Pb intercalation is accompanied by a work function increase. The observed increase in the work function is attributed to the suppression of the electron transfer from the SiC substrate to the graphene layer. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. These results demonstrate that the construction of a graphene‐capped Pb/SiC system offers a possibility of tuning the graphene electronic properties and exploring intriguing physical properties such as superconductivity and spintronics.     

Effect of graded layer on the X-ray double-crystal diffraction rocking curve

The composition gradient in an InAlAs epitaxial layer on InP (0 0 1) substrate has been investigated using an X-ray double-crystal diffraction technique and a computer simulation method. Good agreement has been obtained between theoretical and experimental rocking curves when the correct graded layers are assumed in the samples. The results show that the graded layer introduces very sensitive asymmetric changes in layer peak and interference fringes. The intensities of the interference increase more strongly on the higher or lower angle side, while they are reduced on the other side, and the layer peak shifts to the higher or lower angle direction according to the positive or negative gradient. In all cases, however, the angle separations of the interference fringes do not change if the total thickness of the epilayer is unchanged.     

Effect of inclining angle,bundling and surface treatment on synthetic fibre pull-out from a cement matrix

In an experimental investigation of synthetic fibre pull-out at an angle, it was generally observed that the force and energy of fibre pull-out increase with the inclination angle, but such increases are limited by the strength of the cement matrix at high angles due to matrix spalling. Studies were also conducted on the effects of fibre bundling and surface treatment on the pull-out behaviour. It is suggested that for effective use of the reinforcing fibres, fibre bundling should be minimized and the fibre/matrix bond property should be controlled.     

Effects of temperature,size of water droplets,and surface roughness on nanowetting properties investigated using molecular dynamics simulation

The wetting properties of water nanodroplets on a gold substrate are studied using molecular dynamics (MD) simulations. The effects of temperature, droplet size, and surface roughness are evaluated in terms of molecular trajectories, internal energy, dynamic contact angle, and the radial distribution function. The simulation results show that the wetting ability and spreading speed of water greatly increases with increasing temperature. The dynamic contact angle of water on the gold substrate decreases with increasing temperature and decreasing droplet size and surface roughness, which leads to an increase in wetting ability. The compactness of a water droplet increases with decreasing temperature and droplet size, and slightly increases with degree of roughness. The internal energy of a water droplet decreases with increasing surface roughness, indicating that droplets form more stably on a rough surface.     

Textures and structures of vapor deposits

The texture of vapor deposits (PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critical thickness. The critical thickness depends on the deposition conditions. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their textures.     

MB8镁合金超疏水表面的制备和润湿性

通过激光加工在MB8镁合金表面构造具有规则结构的纹理,再制备1H,1H,2H,2H-全氟葵烷基三氯硅烷(FDTS)自组装分子膜,从而构建了MB8镁合金超疏水表面。用扫描电子显微镜和接触角测量仪观察和测量试样表面的形貌和润湿性。结果表明,激光加工在试样表面构造的粗糙结构和低表面能物质FDTS自组装分子膜使该试样具有超疏水性;经激光加工和沉积自组装分子膜后,MB8镁合金试样表面对水的接触角显著增大(达到150°以上)。将MB8镁合金超疏水表面加工成漂浮平台,承载能力的测试结果表明,超疏水平台的漂浮承载能力明显比非超疏水性平台的大,平台的承载能力与接触角的数值成正比。理论计算结果和"气垫"的存在表明,该超疏水表面符合Cassie-Baxter。状态模型,对接触角理论值与测量值的分析表明分级粗糙结构对超疏水表面构建有重要作用。     

Hydrogen annealing effects on epitaxy of SOI wafer

Thick silicon on insulator (SOI) wafers have been fabricated by chemical vapor deposition (CVD) after separation by implantation of oxygen (SIMOX) process. The hydrogen annealing effects on epitaxial Si layer were studied. The hydrogen annealing could remove the surface damages of substrate caused by SIMOX process and provide a smoother epitaxial substrate. The number of dislocations and stacking faults in the epitaxial layer decreased remarkably by hydrogen annealing SOI substrate. Meanwhile, compared with other reports, our hydrogen annealing did not degrade the buried oxide layer and top Si layer of SOI substrate.     

Atomically controlled processing in silicon-based CVD epitaxial growth

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms after thermal adsorption and reaction of hydride gases on Si(1-x)Gex(100) (x = 0-1) surface are generalized based on the Langmuir-type model. Moreover, Si-based epitaxial growth on N, P or C atomic layer formed on Si(1-x)Gex(100) surface is achieved at temperatures below 500 degrees C. N atoms of about 4 x 10(14) cm(-2) are buried in the Si epitaxial layer within about 1 nm thick region. In the Si(0.5)Ge(0.5) epitaxial layer, N atoms of about 6 x 10(14) cm(-2) are confined within about 1.5 nm thick region. The confined N atoms in Si(1-x)Gex preferentially form Si-N bonds. For unstrained Si cap layer grown on top of the P atomic layer formed on Si(1-x)Gex(100) with P atomic amount of below about 4 x 10(14) cm(-2) using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within 1 nm around the heterointerface. It is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P atomic amount around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si(1-x)Gex/Si heterointerface. These results open the way to atomically controlled technology for ULSIs.     

磷酸二氢钾晶体薄表面层生长动力学实时显微研究

利用光学显微镜实时观测磷酸二氢钾(KDP)晶体柱面及锥面薄表面层的生长过程,测得不同过饱和度下薄表面层前端不同倾角的非正常棱边推移速度。结果表明:倾角越小,非正常棱边推移速度越慢,薄表面生长终止于其前端的正常棱边处;随着过饱和度的增大,非正常棱边推移速度线性增加。计算得到柱面及锥面薄表面层前端非正常棱边推移动力学系数,由于Eslice(010) Eslice(101),因而柱面薄表面层的生长动力学系数大于锥面。建立了基于非奇异面上台阶生长机制下的薄表面层生长体扩散模型。应用该模型解释了薄表面层生长速度随其厚度及前端非正常棱边倾角的变化关系,并讨论了溶液流动对薄表面层生长的影响。结果发现薄表面层生长存在一个使其以恒定厚度向前推移的临界厚度。     

In-situ reflection high-energy electron diffraction study of epitaxial growth of Cu on NaCl (100) under oblique angle vapor deposition

Epitaxial growth of copper on annealed NaCl(100) surface was carried out using thermal evaporation at an oblique angle of incidence (75 ± 5)° with respect to the substrate normal. The substrate was kept at a temperature of (150 ± 5)°C. The crystalline structure of the Cu film was studied in situ by reflection high energy electron diffraction at various deposition times. We observed that the film grows through nucleation of epitaxial islands followed by coalescence and then flattening of the film. The chevron shaped diffraction patterns formed by the refraction effect of electrons were used to identify the crystal facets. With longer deposition times, instead of columnar structures, a continuous epitaxial film was formed despite the oblique angle incidence of the vapor. The morphology of the final film was characterized ex situ by atomic force microscopy and shows L-shaped pores asymmetric with respect to the vapor incident direction.     

Alignment of Semiconductor Nanowires Using Ion Beams

Gallium arsenide nanowires are grown on 〈100〉 GaAs substrates, adopting the epitaxial relation and thus growing with an angle around 35° off the substrate surface. These straight nanowires are irradiated with different kinds of energetic ions. Depending on the ion species and energy, downwards or upwards bending of the nanowires is observed to increase with ion fluence. In the case of upwards bending, the nanowires can be aligned towards the ion beam direction at high fluences. Defect formation (vacancies and interstitials) within the implantation cascade is identified as the key mechanism for bending. Monte Carlo simulations of the implantation are presented to substantiate the results.     

Orientation‐Dependent Strain Relaxation and Chemical Functionalization of Graphene on a Cu(111) Foil

Epitaxial graphene grown on single crystal Cu(111) foils by chemical vapor deposition is found to be free of wrinkles and under biaxial compressive strain. The compressive strain in the epitaxial regions (0.25–0.40%) is higher than regions where the graphene is not epitaxial with the underlying surface (0.20–0.25%). This orientation‐dependent strain relaxation is through the loss of local adhesion and the generation of graphene wrinkles. Density functional theory calculations suggest a large frictional force between the epitaxial graphene and the Cu(111) substrate, and this is therefore an energy barrier to the formation of wrinkles in the graphene. Enhanced chemical reactivity is found in epitaxial graphene on Cu(111) foils as compared to graphene on polycrystalline Cu foils for certain chemical reactions. A higher compressive strain possibly favors lowering the formation energy and/or the energy gap between the initial and transition states, either of which can lead to an increase in chemical reactivity.     

Growth of oriented Ag nanocrystals on air-oxidized Si surfaces: An in-situ reflection high energy electron diffraction study

Growth of Ag nanoislands on air-oxidized Si(001), (111) and (110) surfaces has been investigated by reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and cross-sectional transmission electron microscopy. We have shown that the oriented nanocrystalline Ag, similar to the epitaxial growth of Ag on clean Si surfaces, can be grown on oxide-covered Si surfaces. A thin oxide layer (~ 2-3 nm thick) is formed on ultra-high vacuum (UHV)-cleaned Si surfaces via exposure of the clean reconstructed surface to air. Deposition of Ag was carried out under UHV at different substrate temperatures and monitored by RHEED. RHEED results reveal that Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while, in spite of the presence of the oxide layer between Ag islands and Si, preferred orientations with an epitaxial relationship with the substrate evolve when Ag is deposited at higher substrate temperatures. STM images of the oxidized surfaces, prior to Ag deposition, apparently do not show any order. However, Fourier transforms of STM images show the presence of a short range order on the oxidized surface following the unit cells of the underlying reconstructed Si surface. It is intriguing that Ag nanoislands follow an epitaxial orientational relationship with the substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently, the short range order existing on the oxide surface influences the orientation of the Ag nanoislands.     

不同有机单体等离子体聚合的对比研究

采用等离子体聚合的方法对正丙醇和丙烯醇进行了聚合,成功地在Si基体上得到了有机高分子薄膜,利用FT-IR,XPS研究了薄膜的结构,表明薄膜呈现出一种嵌段的高分子薄膜结构,利用AFM研究了薄膜的表面形貌并且测量了表面粗糙度,研究表明,等离子体聚合后薄膜表面十分平整,平均粗糙度在2 nm以内,利用测量薄膜表面接触角的方法计算了材料的表面能以及临界表面自由能,并且进行了讨论分析.