基于SIW的E波段双模带通滤波器的设计

本文设计了一种基于基片集成波导(SIW)的E波段双模带通滤波器,通过一腔多模在一个谐振腔内实现TE102模与TE301模两种模共存,减少了滤波器谐振腔的个数,同时两种模在腔体中线位置处电场强度达到最强,使得滤波器结构变得由此对称,进一步降低了仿真优化调试难度,最后通过SIW-共面波导过渡结构与微带线匹配。利用三维电磁仿真软件HFSS对谐振腔的尺寸进行优化,仿真结果表明,该滤波器性能良好,中心频率73.5GHz,带宽5GHz,通带内回波损耗>20dB,插损<1dB,带外抑制在65GHz&82GHz处大于30dB。滤波器整体尺寸为9.6×5.2mm,实现了低插损,小型化以及易加工。     

新型CRLH传输线带通滤波器设计

设计了一种新型双负介质传输线结构,该传输线结构具有负的磁导率和负的介电常数,同传统的混合左右手(composite right/left-handed,CRLH)传输线相比,该结构以更简单的构成、更小的尺寸实现了更好的左手媒质特性。应用该结构设计制作了一个任意可调双频带谐波抑制带通滤波器,测量结果显示:该滤波器第一个通带位于2.45 GHz,具有0.5 dB的插损和56%(1 400 MHz)的3 dB带宽;第二个通带位于5.8 GHz,具有1 dB的插损和27%(1 600 MHz)的3 dB带宽。这种CRLH传输线滤波器在无线通信、导航等多频带微波系统中具有良好的应用价值。     

一种共面波导结构双模圆环带通滤波器

提出了一种新型的用共面波导馈线结构实现的双模圆环带通滤波器。该滤波器采用传统的圆环作为谐振器,引入阶梯阻抗作为微扰使其简并模式分离并产生耦合。这样的微扰结构我们称之为环形阶跃阻抗谐振器,它与输入/输出共面波导分别设计在介质基片的两个不同的面上。文中给出了该滤波器的结构及通过仿真和实验获得的性能参数,结果表明该滤波器在带宽为11.4%时通带内的最小插损为1.42dB。     

新型传输零点可控的共面波导带通滤波器

提出了一种新型传输零点可控的共面波导(CPW)结构双模带通滤波器.该滤波器采用了新型的"王"字形共面波导谐振腔."王"字形共面波导谐振腔是由一段均匀阻抗线和两侧与之相连的"T"形枝节构成.调节谐振腔上下"T"形枝节的长度,可以改变谐振器的两个谐振模式之间的距离,从而灵活的调节了滤波器的带宽.调节"T"形枝节的长度还可以控制滤波器传输零点的位置,从而增强带外抑制.仿真与实测结果都表明该滤波器具有良好的性能:低插损,结构紧凑,易于加工制作,可以灵活的调节带宽和传输零点的位置.     

基于双模谐振器的W波段波导带通滤波器

带通滤波器为现代毫米波系统中进行频率选择的重要器件,而波导滤波器因其低损耗、大功率容量、易加工等优点成为首选。为满足系统的小型化要求,设计了一种基于双模谐振器且具有准椭圆函数响应的W波段波导带通滤波器。该波导带通滤波器结构简单紧凑,由两个双模方形脊谐振腔组成,可获得2 个传输零点及四阶准椭圆函数响应。滤波器样品选取紫铜材质,采用CNC 技术加工制作。经矢量网络分析仪测试,该滤波器通带内插损低,达0.5 dB,3 dB 波束带宽为4.35 %(92.2 ~96.3 GHz),回波损耗优于20 dB,通带外存在两个非对称零点。在全W波段的测试结果与仿真数据高度吻合。     

交叉耦合盒式结构微带带通滤波器设计

设计了一种交叉耦合盒式结构微带带通滤波器。采用耦合矩阵方法对交叉耦合盒式结构带通滤波器频率响应特性进行了分析,并且在此基础上研制了一种基于E型双模谐振器的非对称响应带通滤波器。滤波器中心频率为6.4 GHz,带宽为0.8 GHz,最小带内插损为1.9 dB,两个传输零点分别位于4.5 GHz 和7.6 GHz,上下阻带抑制度分别大于35dB、47dB。滤波器有效尺寸约为0.34λg *0.43λg。该滤波器具有结构紧凑、带外抑制度高、选择性高的优点。     

一个DC-32GHz两位微机械移相器

采用分布式微机械传输线结构实现了两位移相器,并且为了减小传输线负载电容和驱动电压首次提出了用共面波导传输线来驱动微机械桥的结构(共面波导驱动结构).结果显示驱动电压小于20V,20GHz时两位移相器的相移为0°/20.1°/41.9°/68.2°,插入损耗为-1.2dB.在DC到32GHz的范围内相移具有良好的线性,插入损耗小于-1.8dB,反射损耗好于-11dB.实验结果表明了该结构在高介电常数衬底上制造低插损、宽带数字微机械射频移相器的潜力.     

基于缺陷地结构的新型共面波导低通滤波器

提出了一种结构较独特的共面波导低通滤波器。为了减小通带内波纹、提高高频阻带抑制,叉指电容周期性加载共面波导结构被调整为非周期性结构,同时在共面波导的接地面上蚀刻了长方形缺陷地结构。基于上述方案设计制作了低通滤波器原形器件。仿真和测试结果表明:该滤波器的带外抑制至少增加了15.00dB,带内波纹显著变小(<1.25dB),通带内最大传输损耗为1.10dB。     

一种高性能腔体带通滤波器的研究与设计

为了抑制CDMA800网络下行频段的噪声,利用HFSS和二维电路仿真软件AWR的协同仿真,设计了同轴腔体滤波器,该滤波器利用交叉耦合结构实现了边带外的高抑制性能。所设计滤波器中心频率为875MHz,带宽10MHz;插入损耗〈-0．25dB;回波损耗〉-20dB;带外抑制〉-80dB,满足了设计要求。仿真结果表明：该滤波器结构设计尺寸小、频带宽、带外抑制高、带内插损小等,在通信领域具有良好的应用前景。     

一种硅基MEMS微波SIR交指带通滤波器

基于7阶SIR交指结构滤波器,提出了一种基于硅MEMS技术的微波S波段交指带通滤波器。不仅保留了交指结构的高通带选择性,而且可以通过调整SIR的阻抗比和电长度比来实现宽阻带。采用MEMS工艺,在双层高电阻率的硅片上完成了滤波器的制作和自封装,它具有体积小、损耗低的优点。仿真结果表明,该滤波器在中心频率2.35 GHz处的相对带宽为30%,带内插损小于1.5 dB,回波损耗大于15 dB,在频率f0±0.8 GHz处的阻带抑制比大于50 dB。该交指带通滤波器的体积仅为(11×7×0.8)mm³。     

X波段SICL小型化带通滤波器的设计

为有效减小X波段滤波器的尺寸,减小通带损耗,对基片集成同轴线(SICL)结构进行了研究,提出一种阶跃阻抗(SIR)型SICL带通滤波器,并针对SICL谐振腔与其他平面电路的连接设计了一种由共面波导(CPW)向SICL谐振腔提供激励的平面结构,以便滤波器的测量。仿真结果表明,滤波器通带特性优异,其中心频率为10 GHz,带宽为1.5 GHz,尺寸为13 mm×7 mm,插入损耗为-0.8 dB。     

基于QMSIW小型化带通滤波器设计

为有效减小X波段基片集成波导(SIW)滤波器的尺寸和插入损耗,提出了基于四分之一模基片集成波导(QMSIW)和共面波导(CPW)混合结构的小型化带通滤波器。为了提高滤波器的选择性和带外抑制,将两个CPW合并到两个级联的QMSIW谐振器中,由于两个CPW谐振器之间的耦合是电耦合,有助于产生两个传输零点,因而具有较高的选择性。该小型化滤波器尺寸仅为8.1 mm×15.4 mm,中心频率为8.7 GHz,相对带宽是16.1%,仿真测得插入损耗为0.83 dB,带外抑制大于40 dB。     

Analysis and Design of Current Probe Transition From Grounded Coplanar to Substrate Integrated Rectangular Waveguides

The transition between a grounded coplanar waveguide (GCPW) and a substrate integrated rectangular waveguide (SIRW) is investigated in this paper. The proposed scheme makes use of a current probe to transfer power between the two dissimilar transmission lines. A computer-aided-design-oriented analytical model is developed in order to optimize the geometrical dimensions of the transition. By using the GCPW instead of the microstrip line to interface the SIRW, substrate thickness can be increased without incurring a penalty due to transmission loss. Therefore, it is possible to achieve higher$Q$components. Experiments at 28 GHz show that an effective bandwidth of 10% can easily be obtained. The insertion loss is less than 0.73 dB over the bandwidth of interest.     

A V-band planar narrow bandpass filter using a new type integrated waveguide transition

A surface mountable planar narrow bandpass filter is proposed and demonstrated at V-band. The filter is constructed using an integrated waveguide in an alumina substrate employing a novel microstrip line to waveguide transition. The insertion loss per one transition is less than 0.1 dB over 43 to 73 GHz. A fabricated three-pole Chebyshev filter exhibits an insertion loss of 3 dB with a 3.3% bandwidth at a center frequency of 62 GHz and the return loss is better than 15 dB in the passband.     

A Fully Embedded 60-GHz Novel BPF for LTCC System-in-Package Applications

In this paper, a novel LTCC stripline (SL) 60-GHz band-pass filter (BPF) composed of transitions to coplanar waveguide (CPW) pads for monolithic microwave integrated circuit integration is presented. For low-loss interconnection with active devices, a CPW-to-SL vertical via transition integrating air cavities and a CPW-to-CPW planar transition using internal ground planes are proposed and implemented. The fabricated transition shows an insertion loss of 1.6 dB and a reflection loss below -20 dB at the passband of the filter. The implemented SL BPF using dual-mode patch resonators shows a center frequency of 60.4 GHz, 3.5 % bandwidth, and reflection losses below -15 dB at the passband. Excluding the insertion loss of the transitions, the filter insertion loss reveals 4.0 dB     

Coplanar waveguide edge-coupled bandpass filters with finite groundplanes

Finite ground plane coplanar waveguide edge-coupled bandpass filters which have no parasitic passband and low insertion loss are demonstrated. Two 5-section filters centred at 10 GHz with a 15% bandwidth with identical design parameters but different ground plane widths; are fabricated on alumina substrate; the measured passband insertion loss is <1.5 dB. The filter with wider ground planes has higher attenuation in its stopbands     

Electronically switchable and tunable coplanar waveguide-slotlineband-pass filters

A coplanar waveguide (CPW)-slotline bandpass filter is described. The circuit allows planar integration of active and passive semiconductor devices both in series and in shunt. A microstrip-to-slotline transition designed to test the filter is also described. Two of the transitions exhibit an insertion loss of less than 1.0 dB over the 2.0-4.0-GHz range. A three-section CPW-slotline bandpass filter demonstrates an insertion loss of less than 0.2 dB over the passband centered at 2.9 GHz. A three-section CPW-slotline switchable bandpass filter integrated with three p-i-n diodes is discussed. It has a 0.7-dB insertion loss in the passband when the p-i-n diodes are off and a 25.0-dB isolation across the entire band when the p-i-n diodes are on. A three-section CPW-slotline varactor-tunable filter integrated with three varactor diodes is presented, showing a 2.0-dB insertion loss and over 20% electronic tuning range. Simple transmission line circuit models are used to optimize the design     

Millimeter-wave tune-all bandpass filters

Distributed microelectromechanical varactors on a coplanar waveguide have been used to design a two- and four-pole bandpass tune-all filters. The two-pole initial bandwidth is 6.4% at 44.05 GHz with a mid-band insertion loss of 3.2 dB and with matching better than 15 dB. The four-pole initial bandwidth is 6.1% at 43.25 GHz with a mid-band insertion loss of 6.5 dB and with matching better than 10 dB. The use of microelectromechanical system bridges allows a continuous tuning for both center frequency and bandwidth. The varactors biasing network has been designed so that the center frequency and bandwidth can be tuned separately. The two-pole filter center frequency can be changed from 44.05 to 41.55 GHz (5.6% tuning range), while the bandwidth can be independently changed from 2.8 to 2.05 GHz. The four-pole filter center frequency can be changed from 43.25 to 40.95 GHz (5.3% tuning range) and the bandwidth can be changed from 2.65 to 1.9 GHz.     

CPW-to-waveguide transition using three-step Chebyshev transformer

A transition structure between a coplanar line and a rectangular waveguide using a three-step Chebyshev transformer is proposed. The structure was designed, manufactured and tested in the X-band. Measurement results show good agreement with the simulation results. A bandwidth of 32% with a return loss better than -20 dB and an insertion loss better than -1 dB over the X-band were obtained.