Design and Characteristics of InGaAs/GaAs MQW SEED Arrays Structure

讨论了谐振腔中的DBR对InGaAs／GaAs多量子阱SEED面阵光反射特性的影响．采用InGaAs／GaAs作为多量子阱SEED器件的有源区,从而获得了980nm工作波长．设计和分析了InGaAs／GaAs多量子阱SEED中的一种用于倒装焊的新型谐振腔结构．多量子阱材料是用MOCVD系统生长,利用微区光反射谱、PL谱以及X射线双晶衍射对多量子阱材料进行了测量和分析,测量结果表明多量子阱材料具有良好的质量,证明了器件结构的设计和分析是准确的．     

InGaAs／GaAs多量子阱SEED设计和特性研究

本文分析了计算了InGaAs/GaAs多量子阱（SEED）的激子吸收行为,对器件的多量子阱及谐振腔结构进行了设计和理论分析,用MOCVD系统生长了多量子阱外延材料,并且对器件的反射谱和光电流谱特性进行了测试。     

组分过冲对InP基InAlAs递变缓冲层的影响(英文)

通过在InP基InxAl1-x As递变缓冲层上生长In0.78Ga0.22As/In0.78Al0.22As量子阱和In0.84Ga0.16As探测器结构,研究了缓冲层中组分过冲对材料特性的影响.原子力显微镜结果表明,在InAlAs缓冲层中采用组分过冲可以使量子阱及探测器样品表面粗糙度都得到降低.对于相对较薄的量子阱结构,X射线衍射倒易空间扫描图和光致发光谱的测量表明,使用组分过冲可以增加弛豫度、减小剩余应力并改善光学性质.而对于较厚的探测器结构,X射线衍射和光致发光谱测试发现使用组分过冲后的材料性质没有明显的变化.量子阱和探测器结构的这些不同特性需要在器件设计应用中加以考虑.     

一种新材料结构的RTD器件的设计及实现

设计了一种带有Al0.22Ga0.78As/In0.15Ga0.85As/GaAs发射极空间层和GaAs/In0.15Ga0.85As/GaAs量子阱的共振隧穿二极管(RTD)材料结构,并且成功地制作了相应的RTD器件.在室温下,测试了RTD器件的直流特性,计算了RTD器件的峰谷电流比和可资电流密度.在分析器件特性的基础上,指出调整材料结构和优化工艺参数将进一步提高RTD器件的性能.     

离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和Ga In NAs/ Ga As量子阱的影响

研究了离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和 Ga In NAs/ Ga As量子阱的影响 .研究表明离子损伤是影响 Ga NAs和 Ga In NAs量子阱质量的关键因素 .去离子磁场能有效地去除了等离子体活化产生的氮离子 .对于使用去离子磁场生长的 Ga NAs和 Ga In NAs量子阱样品 ,X射线衍射测量和 PL 谱测量都表明样品的质量被显著地提高 .Ga In As量子阱的 PL 强度已经提高到可以和同样条件下生长的 Ga In As量子阱相比较 .研究也表明使用的磁场强度越强 ,样品的光学质量提高越明显     

（英）组分过冲对InP基InAlAs递变缓冲层的影响

通过在InP基InxAl1-xAs 递变缓冲层上生长In0.78Ga0.22As/In0.78Al0.22As量子阱和In0.84Ga0.16As探测器结构,研究了缓冲层中组分过冲对材料特性的影响。原子力显微镜结果表明,在InAlAs缓冲层中采用组分过冲可以使量子阱及探测器样品表面粗糙度都得到降低。对于相对较薄的量子阱结构,X射线衍射倒易空间扫描图和光致发光谱的测量表明,使用组分过冲可以增加弛豫度、减小剩余应力并改善光学性质。而对于较厚的探测器结构,X射线衍射和光致发光谱测试发现使用组分过冲后的材料性质没有明显的变化。量子阱和探测器结构的这些不同特性需要在器件设计应用中加以考虑。     

量子阱平面光学各向异性的偏振差分反射谱研究

在室温下用偏振差分反射谱技术观察到了 Ga As/Al Ga As、In Ga As/Ga As和 In Ga As/In P三种量子阱材料的平面光学各向异性。我们发现 Ga As/Al Ga As量子阱 1 h→ 1 e跃迁的偏振度与阱宽成反比 ,与 In Ga As/In P量子阱的报道结果类似。 Ga原子偏析引起的界面不对称可以很好地解释这种行为。与之相反 ,In Ga As/Ga As量子阱的光学各向异性倾向于与阱宽成正比。目前还不能很好地解释这种现象。     

微光电子集成灵巧象素器件

我们采用 MBE生长出大周期 Ga As/ Al Ga As多量子阱 (MQW)外延材料 ,研制了适用于倒装焊结构的自电光效应器件 (SEED)列阵 ,并与 Si CMOS电路通过倒装焊工艺集成为微光电子集成灵巧象素器件。通过对光电特性测试表明 ,器件具有良好的光探测和光调制性能。     

掺In对反型AlGaAs/GaAs异质界面质量的改善及其应用

研究了Al Ga As层掺1%的In对Al Ga As/Ga As量子阱光致发光谱的半峰宽的影响.2 5 K的光致发光结果表明,In作为表面活化剂能有效改善Al Ga As/Ga As异质界面的粗糙度.将此方法应用到反型Al Ga As/Ga As高电子迁移率晶体管(HEMT)材料结构中,Hall测量表明该方法能有效提高反型HEMT的电学性能     

低压金属有机化合物气相外延生长的 (Al_x Ga_(1-x))_(0 .5 1)In_(0 .49)P折射率测量(英文)

采用测量反射谱方法确定了低压金属有机化合物气相外延生长的与 Ga As衬底匹配 (Alx Ga1 - x) 0 .5 1 In0 .49P外延材料的折射率 .实验中测量的反射谱波长范围为 0 .5— 2 .5 μm.在拟合实验数据过程中采用了单振子模型 .折射率数据用于分析应变量子阱 Ga In P/ Al Ga In P可见光激光二极管波导 ,计算出的器件远场图与实验数据吻合很好 .     

GaAs/GaAlAs量子限制Stark效应及自电光双稳现象的实验研究

我们研制了GaAs/GaAlAs多量子阱pin结构的SEED器件。分析了器件的光电流光谱、光电流-电压特性。对于如何实现器件光学双稳态工作的有关问题进行了讨论。     

Multiple Quantum Well SEED Arrays for Flip-Chip Bonding Optoelectronic Smart Pixels

The investigation on GaAs/AlGaAs multiple quantum well Self Electro-optic Effect Device (SEED) arrays for flip-chip bonding optoelectronic smart pixels has been reported. In order to increase the absorption of the intrinsic region, the number of quantum well periods is defined as 90 pairs. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays.     

GaAs/GaAlAs多量子阱自电光效应光学双稳态

采用国产分子束外延系统生长的GaAs/GaAlAs多量子阱材料,成功地制备出室温自电光效应(Self Electrooptic Effect)光学双稳态器件(SEED).报道了这种器件在对称工作(S-SEED)和非对称工作时的光学双稳态特性.     

Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

Double-crystal x-ray diffraction (DCXD) is shown to reveal the onset of relaxation in strained-layer InGaAs/GaAs multiple quantum well (MQW) structures. The MQW structures contain 10 nm thick In_0.16Ga_0.84As quantum wells and 55 nm thick GaAs barrier layers. As the number of periods in the structure was increased from to 3 to 15, the x-ray rocking curves were characterized by increasing distortion of superlattice interference fringes, broadening of superlattice peaks, and reduction in peak intensity. The x-ray diffraction data are correlated with an asymmetric crosshatched surface pattern as observed under Nomarski contrast microscopy. By using DCXD and Nomarski microscopy, the onset of strain relaxation in InGaAs/GaAs MQW structures was established for samples with various GaAs barrier layer thicknesses. For MQW structures in which the thickness of the barrier layers is the same or greater than that of the strained quantum wells, the critical layer thickness can be calculated according to the Matthews and Blakeslee force-balance model with dislocation formation by the single-kink mechanism.     

10-Gb/s Direct Modulation up to 100 $^{circ}$C Using 1.3- $mu$m-Range Metamorphically Grown Strain Compensated InGaAs–GaAs MQW Laser on GaAs Substrate

We have realized 10-Gb/s direct modulation up to 100degC using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mum-range lasing and an increased number of QWs (six). This laser with a 200-mum-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies of 13 and 6 GHz at 25degC and 100degC, respectively. A 10-km single-mode fiber error-free transmission was successfully obtained at a temperature of 85degC .     

Electrically pumped, micro-cavity based single photon source driven at 1 GHz

A resonant cavity light emitting diode combined with a submicron oxide current aperture, to pump individual InGaAs/GaAs quantum dots electrically, has been designed and fabricated. Pulsed correlation measurements demonstrated true single photon emission with g²(0) = 0 at a rate of 1 GHz.     

Optically bistable operation in InGaAs/lnAIAs MOW laser diodes using resonant tunnelling effect

A new type of optically bistable operation using a resonant tunnelling effect has been achieved for InGaAs/lnAIAs MQW laser diodes for the first time. A clear optical bistability with a large on/off ratio was observed in the light output/voltage characteristics. Optical memory operation was also obtained with this MQW laser diode.