Thermo-physical Properties of Continuous Carbon Fiber Reinforced Copper Matrix Composites

Continuous carbon fiber reinforced copper matrix composites with 70％(volume fraction)of carbon fibers prepared by squeeze casting technique have been used for investigation of the coefficient of thermal expansion(CTE)and thermal conductivity．Thermo-physical properties have been measured in both, longitudinal and transversal directions to the fiber orientation．The results showed that Cf／Cu composites may be a suitable candidate for heat sinks because of its good thermo-physical properties e．g．the low CTE(4.18×10-6／K)in longitudinal orientation and(14．98×10-6／K)in transversal orientation at the range of 20-50℃，a good thermal conductivity(87．2 W／m·K)in longitudinal orientation and(58．2 W／m·K)in transversal orientation．Measured CTE and thermal conductivity values are compared with those predicted by several well-known models．Eshelby model gave better results for prediction of the CTE and thermal conductivity of the unidirectional composites．     

Thermal transport across twin grain boundaries in polycrystalline graphene from nonequilibrium molecular dynamics simulations

We have studied the thermal conductance of tilt grain boundaries in graphene using nonequilibrium molecular dynamics simulations. When a constant heat flux is allowed to flow, we observe sharp jumps in temperature at the boundaries, characteristic of interfaces between materials of differing thermal properties. On the basis of the magnitude of these jumps, we have computed the boundary conductance of twin grain boundaries as a function of their misorientation angles. We find the boundary conductance to be in the range 1.5 × 10(10) to 4.5 × 10(10) W/(m(2) K), which is significantly higher than that of any other thermoelectric interfaces reported in the literature. Using the computed values of boundary conductances, we have identified a critical grain size of 0.1 μm below which the contribution of the tilt boundaries to the conductivity becomes comparable to that of the contribution from the grains themselves. Experiments to test the predictions of our simulations are proposed.     

High-sensitivity bolometers from self-oriented single-walled carbon nanotube composites

In this work, films of horizontally aligned single-walled carbon nanotubes were thermally and electrically characterized in order to determine the bolometric performance. An average thermal time constant of τ = 420 μs along with a temperature coefficient of resistance of TCR = -2.94% K(-1) were obtained. The maximum voltage responsivity and detectivity obtained were R(V) =230 V/W and D* = 1.22 × 10(8) cm Hz(1/2)/W, respectively. These values are higher than the maximum voltage responsivity (150 V/W) and maximum temperature coefficient of resistance (1.0% K(-1)) previously reported for carbon nanotube films at room temperature. The maximum detectivity was obtained at a frequency of operation of 1.25 kHz.     

Micro/nanoscale spatial resolution temperature probing for the interfacial thermal characterization of epitaxial graphene on 4H-SiC

Limited internal phonon coupling and transfer within graphene in the out-of-plane direction significantly affects graphene-substrate interfacial phonon coupling and scattering, and leads to unique interfacial thermal transport phenomena. Through the simultaneous characterization of graphene and SiC Raman peaks, it is possible, for the first time, to distinguish the temperature of a graphene layer and its adjacent 4H-SiC substrate. The thermal probing resolution reaches the nanometer scale with the graphene (≈1.12 nm) and is on the micrometer scale (≈12 μm) within SiC next to the interface. A very high thermal resistance at the interface of 5.30 (-0.46) (+0.46) x 10(-5) Km2 W(-1) is observed by using a Raman frequency method under surface Joule heating. This value is much higher than those from molecular dynamics predictions of 7.01(-1.05) (+1.05) x 10(-1) and 8.47(-0.75) (+0.75) x 10(-10) Km2 w(-1) for surface heat fluxes of 3 × 10(9) and 1 × 10(9) and 1 x 10(10) W m(-2) , respectively. This analysis shows that the measured anomalous thermal contact resistance stems from the thermal expansion mismatch between graphene and SiC under Joule heating. This mismatch leads to interface delamination/separation and significantly enhances local phonon scattering. An independent laser-heating experiment conducted under the same conditions yielded a higher interfacial thermal resistance of 1.01(-0.59) (+1.23) x 10(-4) Km2 W(-1). Furthermore, the peak width method of Raman thermometry is also employed to evaluate the interfacial thermal resistance. The results are 3.52 × 10(-5) and 8.57 × 10(-5) K m2 W(-1) for Joule-heating and laser-heating experiments, respectively, confirming the anomalous thermal resistance between graphene and SiC. The difference in the results from the frequency and peak-width methods is caused by the thermal stress generated in the heating processes.     

Room-temperature tests of an optical transducer for resonant gravitational wave detectors

A two-oscillator transducer incorporating a laser-illuminated Fabry-Perot cavity with a finesse of 77,500 and a power dissipation of 1.2 μW was tested at room temperature. The energy of the last resonator with a mass of 1.25 g was measured to be k(B)T within 8%, and no back action from the sensor could be detected. The lowest value of the noise measured away from resonance was 1.0 × 10(-15)m/√Hz, and the electronic noise was 3.2 × 10(-17) m/√Hz. That transducer is designed for a 2400-kg gravitational wave antenna operating at cryogenic temperatures. At 4.2 K and for mechanical quality factors of 3 × 10(6), the measured thermal and electronic noise levels would translate into a sensitivity in h equal to 7.0 × 10 (-19) and 1.5 × 10(-19), respectively.     

Room temperature deposited vanadium oxide thin films for uncooled infrared detectors

We demonstrate the room temperature deposition of vanadium oxide thin films by pulsed laser deposition (PLD) technique for application as the thermal sensing layer in uncooled infrared (IR) detectors. The films exhibit temperature coefficient of resistance (TCR) of 2.8%/K implies promising application in uncooled IR detectors. A 2-D array of 10-element test microbolometer is fabricated without thermal isolation structure. The IR response of the microbolometer is measured in the spectral range 8-13 μm. The detectivity and the responsivity are determined as ∼6×10⁵ cm Hz^1/2/W and 36 V/W, respectively, at 10 Hz of the chopper frequency with 50 μA bias current for a thermal conductance G∼10-3 W/K between the thermal sensing layer and the substrate. By extrapolating with the data of a typical thermally isolated microbolometer (G∼10⁻⁷ W/K), the projected responsivity is found to be around 10⁴ V/W, which well compares with the reported values.     

Thermo-optic coefficients and thermal lensing in Nd-doped KGd(WO4)2 laser crystals

We measured the thermo-optic coefficients dn/dT of anisotropic Nd:KGd(WO(4))(2) crystals at the wavelengths of 1.064 μm and 532 nm (300 K) by a beam deflection method. The values of dn/dT are determined to be dn(p)/dT = -16.0 × 10(-6) K(-1), dn(m)/dT = -11.8 × 10(-6) K(-1), and dn(g)/dT = -19.5 × 10(-6) K(-1) (at 1.064 μm) and dn(p)/dT = -14.3 × 10(-6) K(-1), dn(m)/dT = -10.0 × 10(-6) K(-1), and dn(g)/dT = -15.0 × 10(-6) K(-1) (at 532 nm). Thermal lensing in the flashlamp-pumped N(p)- and N(g)-cut Nd:KGd(WO(4))(2) laser rods was studied at 1.064 μm by a probe beam technique in the nonlasing conditions, and the contribution of the photoelastic term to the thermal lens optical power was estimated. Athermal propagation directions with the definitions dn/dT + (n-1)α(T) = 0 and dn/dT + nα(T) = 0 were found in Nd:KGd(WO(4))(2).     

单根沥青基炭纤维热导率的温度特性研究

采用"T"形法测量了温度100K～400K范围内单根沥青基炭纤维的热导率.结果表明,在300K以下,由于边界散射的影响,炭纤维热导率随着温度升高而增大,350K左右渐趋于饱和,对应热导率约为800W/(in·K),400K附近热导率又增大至920W/(in·K).在不改变接触点的前提下,通过测量同一根纤维小同长度对应的热导率,估计了炭纤维与热线节点处的接触热阻,并讨论了不同温度下辐射对热导率测量的影响,最后得到热导率的测量不确定度在±13%以内.     

Reduction in the thermal conductivity of single crystalline silicon by phononic crystal patterning

Phononic crystals (PnCs) are the acoustic wave equivalent of photonic crystals, where a periodic array of scattering inclusions located in a homogeneous host material causes certain frequencies to be completely reflected by the structure. In conjunction with creating a phononic band gap, anomalous dispersion accompanied by a large reduction in phonon group velocities can lead to a massive reduction in silicon thermal conductivity. We measured the cross plane thermal conductivity of a series of single crystalline silicon PnCs using time domain thermoreflectance. The measured values are over an order of magnitude lower than those obtained for bulk Si (from 148 W m(-1) K(-1) to as low as 6.8 W m(-1) K(-1)). The measured thermal conductivity is much smaller than that predicted by only accounting for boundary scattering at the interfaces of the PnC lattice, indicating that coherent phononic effects are causing an additional reduction to the cross plane thermal conductivity.     

A metallization and bonding approach for high performance carbon nanotube thermal interface materials

A method has been developed to create vertically aligned carbon nanotube (VACNT) thermal interface materials that can be attached to a variety of metallized surfaces. VACNT films were grown on Si substrates using standard CVD processing followed by metallization using Ti/Au. The coated CNTs were then bonded to metallized substrates at 220?°C. By reducing the adhesion of the VACNTs to the growth substrate during synthesis, the CNTs can be completely transferred from the Si growth substrate and used as a die attachment material for electronic components. Thermal resistance measurements using a photoacoustic technique showed thermal resistances as low as 1.7 mm(2) K W(-1) for bonded VACNT films 25-30 μm in length and 10 mm(2) K W(-1) for CNTs up to 130 μm in length. Tensile testing demonstrated a die attachment strength of 40 N cm(-2) at room temperature. Overall, these metallized and bonded VACNT films demonstrate properties which are promising for next-generation thermal interface material applications.     

Electrical and thermal conductivity of low temperature CVD graphene: the effect of disorder

In this paper we present a study of graphene produced by chemical vapor deposition (CVD) under different conditions with the main emphasis on correlating the thermal and electrical properties with the degree of disorder. Graphene grown by CVD on Cu and Ni catalysts demonstrates the increasing extent of disorder at low deposition temperatures as revealed by the Raman peak ratio, IG/ID. We relate this ratio to the characteristic domain size, La, and investigate the electrical and thermal conductivity of graphene as a function of La. The electrical resistivity, ρ, measured on graphene samples transferred onto SiO2/Si substrates shows linear correlation with La(-1). The thermal conductivity, K, measured on the same graphene samples suspended on silicon pillars, on the other hand, appears to have a much weaker dependence on La, close to K～La1/3. It results in an apparent ρ～K3 correlation between them. Despite the progressively increasing structural disorder in graphene grown at lower temperatures, it shows remarkably high thermal conductivity (10(2)-10(3) W K(-1) m(-1)) and low electrical (10(3)-3×10(5) Ω) resistivities suitable for various applications.     

碳纤维增强水泥基复合材料的制备及热电性能研究

将不同含量(0.5%,1.0%,1.5%(质量分数))的碳纤维掺入到硫铝酸盐水泥基体中,制备了碳纤维增强水泥基复合材料。通过SEM、阿基米德排水测试法、四探针法等手段,研究了碳纤维含量对增强水泥基复合材料断面结构、抗弯强度、孔隙率、电导率、热导率和塞贝克系数的影响,并模拟太阳辐射进行了能量收集实验。结果表明,碳纤维均匀地分布在水泥基体中形成网格结构,碳纤维与水泥基体有很强的结合力。当碳纤维含量由0.5%(质量分数)增加到1.5%(质量分数)时,水泥基复合材料的抗压强度由71.36 MPa增加到106.51 MPa,增长了49.26%;孔隙率由0.8%增加到2.0%,增长了150.0%;电导率由0.0214 S/m增加到0.2408 S/m,增长了1025%;热导率由0.261 W/(m·K)减小到0.210 W/(m·K),减少了19.54%;塞贝克系数迅速增大,最大为1.22×10^4μV/K。当碳纤维含量为1.5%(质量分数)时,厚度为20 mm的水泥基复合材料每1 m^2可输出5~6μW的功率;在400 min辐照下,试样表面温度迅速达到70℃左右,1 m^2水泥基复合材料面板上收集到的能量高达8.1×10^-6 J。由此可知,碳纤维含量的增加,极大地提高了碳纤维增强水泥基复合材料的热电性能。     

Local voltage drop in a single functionalized graphene sheet characterized by Kelvin probe force microscopy

We studied the local voltage drop in functionalized graphene sheets of subμm size under external bias conditions by Kelvin probe force microscopy. Using this noninvasive experimental approach, we measured ohmic current-voltage characteristics and an intrinsic conductivity of about 3.7 × 10(5) S/m corresponding to a sheet resistance of 2.7 kΩ/sq under ambient conditions for graphene produced via thermal reduction of graphite oxide. The contact resistivity between functionalized graphene and metal electrode was found to be <6.3 × 10(-7) Ωcm(2).     

Thermal conductivity of carbon nanotube cross-bar structures

We use non-equilibrium molecular dynamics (NEMD) to compute the thermal conductivity (κ) of orthogonally ordered cross-bar structures of single-walled carbon nanotubes. Such structures exhibit extremely low thermal conductivity in the range of 0.02-0.07 W m(-1) K(-1). These values are five orders of magnitude smaller than the axial thermal conductivity of individual carbon nanotubes, and are comparable to the thermal conductivity of still air.     

BN表面沉积纳米Sn对BN/环氧树脂复合材料导热绝缘性能的影响

采用液相还原法,制备了BN表面沉积纳米Sn粒子(BN-Sn NPs)杂化材料,用于环氧树脂(EP)的导热绝缘填料。BN-Sn NPs表面纳米Sn的粒径和熔点分别为10~30 nm 和166.5~195.3℃。BN表面沉积纳米Sn后,粉体Zeta电位及压片的导热系数增加,EP滴在压片表面的接触角降低。在BN-Sn NPs/EP复合材料固化过程中,BN-Sn NPs表面纳米Sn熔融烧结,有利于填料相互桥联在一起,降低接触热阻,并改善界面性能,从而提高BN-Sn NPs/EP复合材料的导热系数。当填料体积含量为30vol%时,BN-Sn NPs/EP复合材料的导热系数达1.61 W(m·K)?1,比未改性BN/EP复合材料的导热系数(1.08 W(m·K)?1)提高了近50%。Monte Carlo法模拟表明,BN和BN-Sn NPs在EP基体中的接触热阻(R_c)分别为6.1×106 K·W?1和3.7×106 K·W?1。与未改性BN/EP复合材料相比,BN-Sn NPs/EP复合材料的介质损耗增加,介电强度及体积电阻率降低,但仍具有良好电绝缘性能。      

Measurement on the Thermal Properties of Graphene Powder

We report on an in-plane thermal diffusivity study of suspended graphene powder (GP) measured by the transient electro-thermal (TET) technique. The GP with a density of 0.24 \(\hbox {g}\,\cdot \,\hbox {cm}^{-3}\) is made up of five–six-layer graphene. And the average size of graphene flakes used in our study is 0.98 \(\upmu \)m. The intrinsic thermal conductivity perpendicular to in-plane of GP is determined at 18.8 \(\hbox {W}\,\cdot \,(\hbox {m}\,\cdot \,\hbox {K})^{-1}\) using the thermal conductivity instrument, and the range of the in-plane thermal diffusivity of GP is identified from \(0.86\times 10^{-5 }\,\hbox {m}^{2 }\,\cdot \,\hbox {s}^{-1}\) to \(1.52\times 10^{-5 }\,\hbox {m}^{2}\,\cdot \,\hbox {s}^{-1}\) measured by the TET technique. Accordingly, the corresponding intrinsic thermal conductivity is 13.5 \(\hbox {W}\,\cdot \,(\hbox {m}\,\cdot \,\hbox {K})^{-1}\)–23.8 \(\hbox {W}\,\cdot \,(\hbox {m}\,\cdot \,\hbox {K})^{-1}\). It is obvious that the two methods used in the experimental research on the intrinsic thermal conductivity of GP in different directions are not only the same order of magnitude but also have a maximum difference of only 5 \(\hbox {W}\,\cdot \,(\hbox {m}\,\cdot \,\hbox {K})^{-1}\). The results of our experiments are about one order of magnitude lower than those reported for four–five-layer graphene. There are various porosities in the whole sample after the compaction steps in the preparation of the samples, which gives rise to a large thermal contact resistance. And widely uneven surface defects observed under an optical microscope for the studied GP lead to substantial phonon scattering. Those factors combine together to give the observed significant reduction in the thermal conductivity.     

Graphene-multilayer graphene nanocomposites as highly efficient thermal interface materials

We found that the optimized mixture of graphene and multilayer graphene, produced by the high-yield inexpensive liquid-phase-exfoliation technique, can lead to an extremely strong enhancement of the cross-plane thermal conductivity K of the composite. The "laser flash" measurements revealed a record-high enhancement of K by 2300% in the graphene-based polymer at the filler loading fraction f = 10 vol %. It was determined that the relatively high concentration of the single-layer and bilayer graphene flakes (~10-15%) present simultaneously with the thicker multilayers of large lateral size (~1 μm) were essential for the observed unusual K enhancement. The thermal conductivity of the commercial thermal grease was increased from an initial value of ~5.8 W/mK to K = 14 W/mK at the small loading f = 2%, which preserved all mechanical properties of the hybrid. Our modeling results suggest that graphene-multilayer graphene nanocomposite used as the thermal interface material outperforms those with carbon nanotubes or metal nanoparticles owing to graphene's aspect ratio and lower Kapitza resistance at the graphene-matrix interface.     

Thermal characterization of gallium arsenic nitride epilayer on gallium arsenide substrate using pulsed photothermal reflectance technique

Thermal conductivity of gallium arsenic nitride (GaAsN) epilayer on gallium arsenide (GaAs) substrate prepared by molecular beam epitaxy technique was measured using pulsed photothermal reflectance technique. Three-layer model incorporated thermal boundary resistance was applied to extract the thermal properties from the sample's photothermal response. Within the thickness ranging from 20 to 80 nm, no thickness dependent relationship with thermal conductivity of GaAsN epilayer was found, and the average thermal conductivity is approximately 27 W/mK at room temperature. The thermal boundary resistance at the Au/GaAsN interface is in the order of 10⁻⁸ m²K/W.     

Measurement of the Intrinsic Thermal Conductivity of a Multiwalled Carbon Nanotube and Its Contact Thermal Resistance with the Substrate

The intrinsic thermal conductivity of an individual carbon nanotube and its contact thermal resistance with the heat source/sink can be extracted simultaneously through multiple measurements with different lengths of the tube between the heat source and the heat sink. Experimental results on a 66‐nm‐diameter multiwalled carbon nanotube show that above 100 K, contact thermal resistance can contribute up to 50% of the total measured thermal resistance; therefore, the intrinsic thermal conductivity of the nanotube can be significantly higher than the effective thermal conductivity derived from a single measurement without eliminating the contact thermal resistance. At 300 K, the contact thermal resistance between the tube and the substrate for a unit area is 2.2 × 10^?8 m² K W^?1, which is on the lower end among several published data. Results also indicate that for nanotubes of relatively high thermal conductance, electron‐beam‐induced gold deposition at the tube–substrate contacts may not reduce the contact thermal resistance to a negligible level. These results provide insights into the long‐lasting issue of the contact thermal resistance in nanotube/nanowire thermal conductity measurements and have important implications for further understanding thermal transport through carbon nanotubes and using carbon nanotube arrays as thermal interface materials.     

Experimental Reconstruction of Thermal Parameters in CNT Array Multilayer Structure

The thermal conductivities, thermal diffusivity, thermal anisotropy ratio, and thermal boundary resistance for the multilayered microstructure of a carbon nanotube (CNT) array are reconstructed experimentally using the 3ω method with two different width metal heaters. The thermal impedance in the frequency domain and sensitivity coefficients are introduced to simultaneously determine the multiple thermal parameters. The thermal conductivity at 295 K is 38 W · m⁻¹ · K⁻¹ along the nanotube growth direction, and two orders of magnitude lower in the direction perpendicular to the tubes with the anisotropy ratio as large as 86. Separation of the contact and CNT array resistances is realized through circuit modeling. The measured thermal boundary resistances of the CNT array/Si substrate and insulating diamond film interfaces are 3.1 m² · K · MW⁻¹ and 18.4 m² · K · MW⁻¹, respectively. The measured thermal boundary resistance between the heater and diamond film is 0.085 m² · K · MW⁻¹ using a reference sample without a CNT array. The thermal conductivity for a CNT array already exceeds those of phase-changing thermal interface materials used in microelectronics.