Magnetron sputtering deposition of [FePt/Ag]n multilayers for perpendicular recording

[FePt/Ag]n multilayers were deposited on glass substrates by RF magnetron sputtering and ex situ annealed at 550℃ for 30 min. The effects of inserted Ag layer thickness and the number of bilayer repetitions （n） on the structure and magnetic properties of the multilayers were investigated. It was found that the difference between in-plane and out-of-plane coercivities varied with an increase of inserted Ag layer thickness in the [FePt 2 nm/Ag x nm]10 multilayers. The ratio of out-of-plane coercivity to in-plane coercivity reached the maximum value with the Ag layer thickness of 5 nm, indicating that the Ag layer thickness plays an important role in obtaining perpendicular orientation. For the [FePt 2 nm/Ag 5 um]n multilayers, perpendicular orientation is also influenced by n. The maximum value of the ratio of out-of-plane coercivity to in-plane coercivity appeared when n was given as 8. It was found that the [FePt 2 nm/Ag 5 nm]8 had a high perpendicular coercivity of 520 kA/m and a low in-plane one of 88 kA/m, which shows a strong perpendicular anisotropy.     

MAGNETORESISTANCE EFFECT OBSERVED IN Fe／Mo MULTILAYERS PREPARED BY ELECTRON BEAM EVAPORATION

The Fe/Mo multilayers were prepared by electron beam evaporation, the micro structure and magnetic properties of the multilayers were studied by X-ray diffraction, vibrating-sample magnetometer (VSM) et al. The experimental results revealed that the Fe/Mo multilayers in our experimental conditions behaved magnetoresistance effect with a sharp peak on magnetoresistance (MR) ratio curve, and magnetoresistance is easily saturated at low applied magnetic fields. For [Fe(1.5nm)/Mo(1.0nm)]4,2 multilayers, MR ratio could arrive to 0.1%. The antiferromagnetic interlayer coupling could be observed in some films at room temperature. The strength of the antiferromagnetic interlayer coupling J in the films is low because of the low saturation field Hs. The relationship between magnetic properties and micro structure was also discussed in this paper.     

Electrical properties of La0.6Sr0.4Co1-yFeyO3 cathode material

The electrical properties of La0.6Sr0.4Co1-yFeyO3 （LSCF, y=0-1.0） cathode materials were measured by DC four probes, X-ray photo-electron spectrum （XPS） was also introduced to determine the chemical state of Co, F.e ions in LSCF. It is found that the electrical conductivity of each sample has a maximum value with increasing temperature. XPS analysis shows that Co ion has three different chemical states, corresponding to two with Fe ion. The analyses indicates that the small-polaron hopping mechanism dominates the electron conduction at low temperature, while at high temperature, the three factors such as the thermally activated disproportionation of Co^3＋ ions into Co^2＋ and Co^4＋ pairs, the ionic compensation of oxygen vacancies formed at high temperatures, and Fe^4＋ ions charge compensation preferential to Co^4＋, all contribute to electrical conduction.     

Theoretical and experimental investigation on giant magnetoresistive materials with amorphous ferromagnetic layer

Pseudo-spin-valve （PSV） sandwiches using amorphous CoNbZr alloy as soft magnetic layer were fabricated by magnetron sputtering. The giant magnetoresistance （GMR） and its dependence on the thickness of magnetic layer were investigated. Anti-parallel magnetization alignments were observed in the samples with very thin CoNbZr thickness （2-4 nm） and a maximum GMR ratio of 6.5% was obtained. The Camley-Barnas semiclassical model was extended for amorphous layer based ：nagnetic sandwiches by considering that the mixed layers exist between the ferromagnetic and nonmagnetic layer. The calculated results agree with the experimental results very well, indicating that the new model gives a more realistic picture of the physical processes that take place in the magnetic sandwiches. Moreover, the calculated results for amorphous sandwiches also clarify that the occurrence of maximum GMR at very small thickness of amorphous layer is ascribed to the short mean-flee-path in amorphous materials.     

Ultrahigh frequency properties of discontinuous CoFeB/SiO2 multilayer films with high resistivity

A series of multilayers of C036Fe46B18/SiO2 were fabricated by DC/RF magnetron sputtering, and further post-annealed in vacuum magnetic field at 200℃ for 2 h. The results show that the microstructures and electromagnetic properties of C036Fea6BIs/SiO2 multilayer films can be altered by varying the thickness of CoFeB and the process of annealing. High permeability along with high magnetic loss in the GHz frequency range is achieved in the optimized discontinuous multilayer films. Both real and imaginary parts of the complex permeability are larger than 260 at 1.6 GHz for this film, and the resistivity is as high as 1.4 mΩcm. The discontinuous Co36Fea6B18/SiO2 multilayers are supposed to serve as the microwave absorbers and EMI shielding materials in GHz range.     

Layer Thickness-Dependent Hardness and Strain Rate Sensitivity of Cu–Al/Al Nanostructured Multilayers

Cu–Al/Al nanostructured metallic multilayers with Al layer thickness hAlvarying from 5 to 100 nm were prepared, and their mechanical properties and deformation behaviors were studied by nanoindentation testing. The results showed that the hardness increased drastically with decreasing hAldown to about 20 nm, whereafter the hardness reached a plateau that approaches the hardness of the alloyed Cu–Al monolithic thin films. The strain rate sensitivity(SRS, m),however, decreased monotonically with reducing hAl. The layer thickness-dependent strengthening mechanisms were discussed, and it was revealed that the alloyed Cu–Al nanolayers dominated at hAlB 20 nm, while the crystalline Al nanolayers dominated at hAl[ 20 nm. The plastic deformation was mainly related to the ductile Al nanolayers, which was responsible for the monotonic evolution of SRS with hAl. In addition, the hAl-dependent hardness and SRS were quantitatively modeled in light of the strengthening mechanisms at different length scales.     

PREPARING NANO-CRYSTALLINE La DOPED WC/Co POWDER BY HIGH ENERGY BALL MILLING

The La doped WC/Co powder was prepared by high energy ball milling. The changes of crystal structure, micrograph and defect of the powder were investigated by means of XRD (X-ray diffraction), SEM (scanning electron microscope) and DTA (differential thermal analysis). The results show that adding trace La element into carbides is effective to minish the grain size of WC/Co powder. The La doped carbides powder with grain size of 30nm can be obtained after 10h ball milling. The XRD peak of Co phase disappeared after 20h ball milling, which indicated solid solution (or secondary solid solution) of Co phase in WC phase. The La doped powder with grain size of 10nm is obtained after 30h ball milling. A peak of heat release at the temperature of 470℃ was emerged in DTA curve within the range of heating temperature, which showed that the crystal structure relaxation of the powder appeared in the process of high energy ball milling. After consolidated the La doped WC/Co alloy by high energy ball milling exhibits     

The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon

The main purpose of the present micro-structural analysis by transmission electron microscopy(TEM)and X-ray diffraction(XRD)was to investigate whether amorphous Zr-Ge-N films are a potential candidate as a diffusion barrier for Cu wiring used in Si devices.The Zr-Ge-N films were prepared by a radio frequency(RF)reactive magnetron sputter-deposition technique using N2 and Ar mixed gas,and the film structure was found to be sensitive to the gas flow ratio of N2 vs.Ar during sputtering.Polycrystalline Zr-Ge-N films were obtained when the N2/(Ar+N2)ratio was smaller than 0.2 and amorphous-like Zr-Ge-N films were obtained when the ratio was larger than 0.3.Diffusion barrier test was performed by annealing the Cu/Zr-Ge-N/Si film stack under Ar atmosphere.The deposited Zr-Ge-N(C)films remained amorphous even after high temperature annealing.The Cu diffusion profile in the film was assessed by the Auger electron spectroscopy(AES).The results indicate that Cu diffusion was minimal in amorphous Zr-Ge-N(C)films even at high annealing temperatures of 800℃.     

Preparation of layered oxide Li（Co1/aNi1/3Mn1/3）O2 via the sol-gel process

To obtain homogenous layered oxide Li(Co1/3Ni1/3Ni1/3Mn1/3)O2 as a lithium insertion positive electrode material,the sol-gel process using citric acid as a chelating agent was applied.The material Li(Co1/3,Ni1/3Mn1/3)O2 was synthesized at different calcination temperatures.XRD experiment indicated that the hyered Li(Co1/3Ni1/3Mn1/3)O2material could he synthesized at a lower temperature of 800℃,and the oxidation state of Co,Ni,and Mn in the cathode confirmed by XPS were 3, 2,and 4,respectively.SEM observations showed that the synthesized material could form homogenous particle morphology with the particle size of about 200nm In spite of different calcination temperatures,the charge-discharge curves of all the samples for the initial cycle were similar,and the cathode synthesized at 900℃ showed a small irreversible capacity loss of 11.24% and a high discharge capacity of 212.2 mAh.g-1 in the voltage range of 2.9-4.6 V.     

Arc Erosion Behavior of Cu–0.23Be–0.84Co Alloy after Heat Treatment: An Experimental Study

The arc erosion behavior of Cu–0.23Be–0.84 Co alloy after heat treatment was investigated experimentally by a JF04 C electric contact test system. The arc duration, arc energy, contact resistance and contact pressure of Cu–0.23Be–0.84 Co alloy after solution treatment and aging treatment were analyzed. The arc erosion morphologies were contrastively observed by a three-dimensional measuring system and scanning electron microscopy. For the Cu–0.23Be–0.84 Co alloy in solution state and aging state, the maximum values of arc duration are 90 and 110 ms, and the arc energies are 15,000 and18,000 m J, respectively. The maximum value of the contact resistance of Cu–0.23Be–0.84 Co alloy in different states is about 33 m X. The contact pressure of Cu–0.23Be–0.84 Co alloy in solution state generally changes between 50 and 60 c N during whole make-and-break contacts, while in aging state, it has a larger fluctuation range. Moreover, the quality of moving contact(anode) decreases, while static contact(cathode) increases. The materials transfer from anode to cathode during make-and-break contacts. The total mass losses of Cu–0.23Be–0.84 Co alloy in solution state and aging state are 3and 1.2 mg, respectively. In addition, a number of discrete corrosion pits, molten droplet, porosity and cavity distribute on the surface of moving contact and static contact. The arc erosion model of Cu–0.23Be–0.84 Co alloy in make-and-break contact was built. The arc erosion resistance of Cu–0.23Be–0.84 Co alloy after heat treatment is closely related to the microstructure and the properties of contact materials. This experimental study is important to evaluate the anode or cathode electrocorrosion fatigue life.     

插入Bi层对NiFe/Cu/NiFe/FeMn自旋阀多层膜交换耦合的影响

对于NiFe/Cu/NiFe/FeMn自旋阀多层膜，Cu原子偏聚到NiFe/FeMn界面将导致自旋阀多层膜中NiFe/FeMn的交换耦合Hex下降，然而，少量的表面活化原子Bi被沉积到Cu层和被钉扎NiFe层之间。Cu原子在NiFe/FeMn界面的偏聚可以被抑制。而且，更重要的是Ta/NiFe/Cu/NiFe/FeMn/Ta自旋阀多层膜中的交换耦合场Hex可以被有效地提高。     

Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy

Pseudo spin valves(SVs) exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt(5.0 nm)/[Co(0.4 nm)/Pt(0.6 nm)]3/Co(0.4 nm)/Cu(3.0 nm)and Cu(3.0 nm)/[Co(0.4 nm)/Pt(1.5 nm)]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity(HC) of both layers. The perpendicular giant magnetoresistance(GMR) of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV.     

[Co／Ti],[Co／Cu（Ni）]多层膜的结构与磁性

用双对向靶溅射方法制备了具有非晶磁性的「Ｃｏ／Ｔｉ」３０，「Ｃｏ／Ｃｕ（Ｎｉ）３０」两组多层膜，分别用Ｘ射线衍射，透射电镜和振动样品磁强计做了结构和磁性测量，在以非晶Ｃｏ和Ｃｉｕ－Ｎｉ合金构成的「Ｃｏ／Ｃｕ（Ｎｉ）」多层膜中，发现饱和磁化强度Ｍｓ随非磁性层厚度ｄｓ的增国发生振荡变化；在以非晶Ｃｏ和Ｔｉ构成的「Ｃｏ／Ｔｉ」多层膜中，ＭＳ和则随ｄｓ的增加而减小。     

STRUCTURE, MAGNETISM AND MAGNETORESISTANCE OF ANNEALED Co/Cu DISCONTINUOUS MULTILAYERS

1.IntroductionGiantmagnetoresistance(GMR)inmultilayprsandgranularfilmshasattractedmuchattentionforitsimportanceintheoriesandapplications.Recently,inordertoredlicethesaturationmagneticfieldofGMRl'orlow--fieldsensorapplications,someattemptshavebeenmadetoprepareintermediatesystemsbetweenmultilayersandgranularfiimsfl--6],suchasmultilayerswith1lltrathinandthereforediscontinuousmagneticlayersll,2]orannealedmagneticmultilayers[3--6].However,theverythinmagneticlayersbecomesuperparamagneticatroomtemp…     

Organic spintronics: The case of Fe/Alq3/Co spin-valve devices

We have embarked on studying magneto-transport response of organic spin-valves made of evaporated Alq₃ spacer sandwiched between two ferromagnetic (FM) electrodes with spin-injecting capability. Recently, we have fabricated and completed studies on organic spin-valve devices using half-metallic manganites as one of the spin-injecting FM electrode, which have shown giant magnetoresistance (GMR) of up to 40% at 11 K. Also we found that the GMR response decreases at higher temperatures, and actually disappears at temperatures above ∼180 K, partially because the FM manganite loses its magnetic properties at ambient temperature. In order to realize room temperature organic spin-valve devices, we have begun studying spin-valve devices where both spin-injecting FM electrodes have high Curie temperatures, and thus maintain their magnetic properties at ambient temperature. In this paper we report our preliminary investigations of Fe/Alq₃/Co spin-valves, where both electrodes are regular, d-band metallic FM's. We found that these devices show GMR with maximum of about 5% at 11 K. However, at elevated temperatures the GMR value steeply decreases, and in fact vanishes at 90 K. We attribute this decrease to the increase of the spin-lattice relaxation rate of the injected spin-1/2 carriers in the Alq₃ spacer at elevated temperatures, where there is also change in the spin carrier injection mechanism at the Fe/Alq₃ interface.     

Co/Pt多层膜的调制结构对磁光性能的影响

研究了Ｃｏ／Ｐｔ多层膜中,Ｃｏ层厚度,Ｃｏ、Ｐｔ含量比,溅射温度对多层膜磁光性能的影响。研究发现Ｃｏ层厚度及Ｃｏ、Ｐｔ含量比对Ｃｏ／ｐｔ多层膜的磁光性能起决定性影响。当ｔＣｏ〈０．４ｎｍ,ｔＣｏ／ｔＰｔ＝１／２时。可获得较好的综合磁光性能;适当提高溅射时基体的温度,可改善多层膜的结晶性并获得较好的调制周期结构,最终改善其磁光性能。     

Magnetic anisotropy of Co/Cu/Co nanocrystalline films upon magnetic annealing

The magnetic anisotropy of Co/Cu/Co films with the thickness of the copper spacer corresponding to the antiferromagnetic and ferromagnetic indirect exchange coupling between Co layers has been studied. The films deposited on naturally oxidized (111) Si single crystals were produced by magnetron sputtering. The films were annealed at 240°C. Such an annealing virtually neither changes the grain size nor leads to the mixing of layers; i.e., no disturbance of the coupling type between the cobalt layers takes place. Changes in the surface and induced magnetic anisotropy and in the effective energy of indirect exchange coupling have been studied upon annealing in the presence and absence of a magnetic field. It has been found that the shape of surface inhomogeneities in the films changes upon annealing in the magnetic field applied along the film plane, which substantially affects, the surface anisotropy. In the films characterized by antiferromagnetic coupling, the easy axis of magnetization is induced only in the magnetic fields exceeding the saturation field. The induced-anisotropy constant estimated theoretically agrees well with those determined experimentally.     

离子束溅射制备Co／Pt多层膜的结构

采用高角Ｘ射线衍射（ＨＸＲＤ）和ＴＥＭ研究用离子束溅射（ＩＢＳＤ）技术制备的Ｃｏ／Ｐｔ多层膜的晶体结构和显微组织形貌，结果表明：Ｃｏ／Ｐｔ多层膜的晶体结构与Ｃｏ、Ｐｔ层厚度ｔＣｏ、ｔＰｔ密切相关。当ｔＣｏ＜ｔＰｔ＜２１０时，Ｃｏ、Ｐｔ层为共格ｆｃｃ结构，随ｔＣｏ、ｔＰｔ增加，逐渐向非共格关系转变，同时，Ｐｔ、Ｃｏ层晶格发生了严重畸变。ＴＥＭ发现Ｃｏ／Ｐｔ多层膜的组织形貌明显受基底影响，与沉积在Ｓｉ基底表面上的Ｃｏ／Ｐｔ多层膜相比，沉积在ＮａＣｌ上的Ｃｏ／Ｐｔ多层膜的晶粒出现择优取向且呈条纹状分布，晶粒明显粗化