Co/Cu/Co纳米多层膜的铁磁耦合效应

采用洛仑兹电子显微镜研究了磁控溅射沉积制备的Cu(20 nm)/Co/Cu/Co纳米多层膜磁畴结构随铁磁层间耦合效应的变化. Cu中间层厚度较薄时, 由于铁磁层之间的耦合作用, 纳米多层膜为垂直易磁化, 磁畴为磁泡结构, 磁泡的平均直径随Cu中间层厚度的增加而减小, 多层膜矫顽力呈减小趋势. 当Cu中间层厚度大于3 nm时, 铁磁层之间的耦合作用减弱, 纳米多层膜为面内易磁化, 磁泡结构的磁畴消失, 全部为具有波纹状的接近180°畴壁的磁畴结构.     

退火对Co/Cu多层膜微观结构和磁性能的影响

研究了退火对磁控溅射Co/Cu多层膜微观结构和磁性能的影响。用扫描电子显微镜(SEM),透射电子显微镜(TEM)观察了沉积态及在不同温度退火后Co/Cu多层膜表面及截面的显微组织,用能谱仪(EDS)分析了退火后Co/Cu多层膜截面的元素分布,用综合物性测量系统(PPMS)对Co/Cu多层膜的磁滞回线进行了测量。表面显微组织的观察结果表明退火温度低于450℃时,多层膜表面形貌变化不大,均是由细小的晶粒组成。退火温度高于该温度后,随退火温度的升高,晶粒迅速长大。截面显微组织的观察结果和元素分布的测试结果表明,磁控溅射的Co/Cu多层膜内有大量柱状晶,随退火温度升高柱状晶长大。当退火温度达到600℃后,多层膜内的层状结构被破坏。磁滞回线的测量结果表明,退火温度低于400℃时,Co/Cu多层膜的磁性能变化不大,退火温度高于该温度后,随退火温度升高,矫顽力迅速增大。     

Cr,Cu,Co对Fe—Si—B非晶合金磁致伸缩系数的影响

本文报道了Fe_(80-x)Cr_xSi_5B_(15),Fe_(80-x)Cr_xC_5B_(15),Fe_(80-x)Cu_xSi_5B_(15)和(Fe_(1-x)Co_x)_(32)Cu_(0.4)Si_(4.4)B_(13.2)四系列非晶合金在室温下的饱和磁致伸缩系数λs随成分x的变化关系,讨论了C,Si,Cr,Cu,Co原子对磁致伸缩系数的影响。发现少量Cu,Co的加入大大提高了非晶合金的λs。特别是(Fe_(1-x)Co_x)_(82)Cu_(0.4)Si_(4.4)B_(13.2)系列中当x=0.02时峰值λs=70×10~(-6)。     

Si粉表面溶胶-凝胶预处理制备Cu/Si复合材料

以Si粉在Al_2O_3/TiO_2复合溶胶中预处理形成的凝胶膜层作为扩散阻挡层抑制Cu-Si反应,制备出Cu/Si复合材料,研究了Cu/Si复合材料的相组成、显微结构与性能.结果表明:Si粉预处理的Cu/Si复合材料主要由Cu和Si组成,含有少量的Cu_3Si相;其硬度为147HV0.1,室温热扩散系数为26.4 mm~2/s.复合材料烧结过程中Cu原子与Si原子借助膜层中的缺陷部位进行扩散,在Cu/Si界面局部反应形成Cu-Si化合物.相比之下,Si粉未预处理的Cu/Si复合材料只含有Cu_3Si相,无Cu与Si残留;其硬度高达399HV0.1,室温热扩散系数仅为3.0 mm~2/s.所以,Si粉表面溶胶-凝胶预处理可以有效降低Cu-Si反应程度,保持复合材料中的Cu相与Si相,提高导热性能.     

Cu/Al/Cu层状金属复合材料电子束焊接接头特征

研究了Cu/Al/Cu层状金属复合材料的电子束焊,对焊接接头的表面成形、微观组织、力学性能进行分析。结果表明,采用电子束焊可以实现Cu/Al/Cu层状金属复合材料的有效连接。不同金属层焊缝宽度明显不同,铝层焊缝宽度最大,且铝层金属大量进入顶部和底部的铜层焊缝中。各层母材和焊缝界面均出现了IMCs层,铝层主要是Al2Cu,铜层则主要是AlCu,Al2Cu。在焊缝中心生成大量的块状Al2Cu,均匀分布在α-Al和Al2Cu组成的共晶组织基体中。接头抗拉强度为44 MPa,断口呈现明显的脆性断裂特征,拉伸断裂位置于显微硬度最高的焊缝中心区。创新点： (1)采用Cu/Al/Cu层状金属复合材料代替纯铜在工业领域的应用。(2)采用电子束焊接技术实现Cu/Al/Cu三明治结构层状金属复合材料的焊接。     

[Co／Ti],[Co／Cu（Ni）]多层膜的结构与磁性

用双对向靶溅射方法制备了具有非晶磁性的「Ｃｏ／Ｔｉ」３０，「Ｃｏ／Ｃｕ（Ｎｉ）３０」两组多层膜，分别用Ｘ射线衍射，透射电镜和振动样品磁强计做了结构和磁性测量，在以非晶Ｃｏ和Ｃｉｕ－Ｎｉ合金构成的「Ｃｏ／Ｃｕ（Ｎｉ）」多层膜中，发现饱和磁化强度Ｍｓ随非磁性层厚度ｄｓ的增国发生振荡变化；在以非晶Ｃｏ和Ｔｉ构成的「Ｃｏ／Ｔｉ」多层膜中，ＭＳ和则随ｄｓ的增加而减小。     

Co/Pt多层膜X射线小角衍射分析

对Ｃｏ／Ｐｔ多层膜进行Ｘ射线小角衍射分析,测量出多层膜的周期厚度,解释多层膜小角衍射主峰之间出现次峰的现象,并确立了次峰个数与膜周期数之间的关系。     

Cu/Ni多层膜强化机理的分子动力学模拟

运用分子动力学方法模拟了Cu／Ni薄膜结构在纳米压入和微摩擦过程位错的运动规律,探讨了薄膜结构中位错与界面的相互作用规律．结果表明：Cu／Ni多层膜结构中的层间界面会阻碍位错继续向材料内部扩展,阻碍作用主要来自于两个方面：界面失配位错网对位错运动的排斥阻力使其难以到达或穿过界面;由弹性模量差而产生的界面镜像力使位错被限制在Cu单层膜内运动．这种阻碍作用有利于提高Cu／Ni多层薄膜的力学性能．     

Co/Pt多层膜的结构和饱和磁化强度

采用离子束溅射技术制备Ｃｏ／Ｐｔ多层膜,用ＲＢＳ、小角ＸＲＤ和断面ＴＥＭ研究了多层膜的周期性调制结构,用ＶＳＭ研究了磁性层Ｃｏ和顺磁性层Ｐｔ的厚度变化对饱和磁化强度的影响。结果表明,多层膜具有良好的周期性层状结构,和设计值一致。样品的饱和磁化强度（Ｍｓ）随Ｃｏ层厚度增加而增大,随Ｐｔ层的厚度增大而减小。当Ｃｏ层和Ｐｔ层的厚度比一定时,样品的饱和磁化强度不受周期数的影响,符合Ｍｓ＝ＭｃｏｔＣｏ／Ｄ模     

组分调制Cu/Ni多层膜的合金化及其合金化镀层的耐蚀特性

采用双槽电沉积方法制备出了Cu/Ni多层膜。探讨了调制波长、热处理条件等对Cu/Ni多层膜合金化行为影响的规律,并借助于SEM和XRD等对Cu/Ni多层膜及其合金化镀层的结构与组成进行了分析表征。结果表明,利用Cu/Ni多层膜合金化方法可以制备出组织均一、成分均匀的Cu-Ni合金镀层,且多层膜调制波长的减小、热处理时间的延长及保温温度的升高均有利于Cu/Ni多层膜的合金化。此外,利用电化学综合测试技术对合金镀层的耐蚀行为进行了评估。结果表明,合金化后的Cu-Ni合金镀层比相应条件下的纯Cu镀层、Ni镀层具有更正的自腐蚀电位、更低的极化电流密度以及更小的腐蚀速率。     

Giant magnetoresistance and super-paramagnetism in electrodeposited NiFe/Cu multilayers

The giant magnetoresistance of electrodeposited NiFe/Cu multilayers from a single bath under potentiostatic control is studied. The observed nonsaturating behavior urged us to investigate the probability of the occurrence of superparamagnetic regions in these multilayers. In this research, for the first time, the presence of super-paramagnetic regions in electrodeposited NiFe/Cu multilayers is shown and proved via high resolution transmission electron microscopy. The reason was found to be the existence of a very large anodic transient at the beginning of the copper deposition pulse, which could be eliminated by choosing a more negative potential.     

界面散射对Ni_(80)Co_(20)/M(M=Co,Cr,Ag)多层膜各向异性磁电阻的影响

用磁控溅射方法制备了Ｎｉ８０Ｃｏ２０／Ｍ（Ｍ＝Ｃｏ,Ｃｒ,Ａｇ）多层膜样品系列,Ｃｏ,Ｃｒ,Ａｇ杂质层的标称厚度为０．１ｎｍ,研究了界面散射对多层膜的磁及输运性质的影响．零场电阻率ρ的测量结果表明,对含Ｃｒ样品,ρ随杂质层间距Ｌ的依赖关系能较好的用Ｆｕｃｈｓ－Ｓｏｎｄｈｅｉｍｅｒ（Ｆ－Ｓ）理论描述．而对含Ｃｏ和Ａｇ样品,ρ随Ｌ的依赖关系在Ｌ小于１５ｎｍ时开始偏离Ｆ－Ｓ理论．磁电阻测量表明,含Ｃｒ和Ａｇ样品,各向异性磁电阻Δρ在Ｌ＜１５ｎｍ时随Ｌ的减小陡然下降．对含磁性Ｃｏ元素的样品,其Δρ值在Ｌ＞１５ｎｍ时高于Ｎｉ８０Ｃｏ２０单层薄膜的Δρ值;在Ｌ＜１５ｎｍ时Δρ值随Ｌ呈现振荡变化的趋势．磁性测量表明,三个系列样品的矫顽力Ｈｃ在Ｌ＜１５ｎｍ时都随Ｌ近似直线上升,在Ｌ＞１５ｎｍ后趋于饱和;经４００℃真空退火后Ｈｃ都显著下降．     

STRUCTURE, MAGNETISM AND MAGNETORESISTANCE OF ANNEALED Co/Cu DISCONTINUOUS MULTILAYERS

1.IntroductionGiantmagnetoresistance(GMR)inmultilayprsandgranularfilmshasattractedmuchattentionforitsimportanceintheoriesandapplications.Recently,inordertoredlicethesaturationmagneticfieldofGMRl'orlow--fieldsensorapplications,someattemptshavebeenmadetoprepareintermediatesystemsbetweenmultilayersandgranularfiimsfl--6],suchasmultilayerswith1lltrathinandthereforediscontinuousmagneticlayersll,2]orannealedmagneticmultilayers[3--6].However,theverythinmagneticlayersbecomesuperparamagneticatroomtemp…     

Colossal magnetoresistance in La-Ca-Mn-O

When an external magnetic field is applied to the colossal magnetoresistance (CMR) materials such as La-Ca-Mn-O, a very large change in electrical conductivity by several orders of magnitude is obtained. The magnetoresistance is strongly temperature-dependent, and exhibits a sharp peak below room temperature, which can be shifted by adjusting the composition or processing parameters. The control of lattice geometry or strain, e.g., by chemical substitution, epitaxial growth or post-deposition anneal of thin films appears to be crucial in obtaining the CMR properties. The orders of magnitude change in electrical resistivity could be useful for various magnetic and electric device applications. This article based on a presentation made in the symposium “The 1999 KSEA Materials Symposium in Honor of Professor Sang Joo Kim’s 70th Anniversary”, held at UCLA, Los Angeles, CA, USA, August 12–14, 1999 under the auspices of Korea—US American Scientists and Engineers Association.     

非平衡条件下Fe/SiO2/p-Si复合结构的巨磁阻效应

研究了基于简单Fe/SiO 2/p-Si结构的2个拼接Schottky二极管的巨磁阻效应。该巨磁阻效应只在光辐照非平衡条件下才显现,且磁阻率可达到100以上。该磁阻效应对经过器件的偏流大小与方向以及磁场极性具有高度依赖性。更重要的是巨磁阻效应只在当子系统中少量电荷载子转移至非平衡状态下时才显现。这种磁敏感装置可为半导体器件开辟一个新的发展方向提供参考。     

A new single bath for the electrodeposition of NiFe/Cu multilayers exhibiting giant magnetoresistance behavior

A new single bath for the electrodeposition of ultrathin NiFe/Cu multilayers was developed and magnetoresistance measurements were conducted. Complementary methods such as scanning electron microscopy (SEM), x-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the multilayers. Magnetoresistance measurements indicated that the multilayers grown from this new bath exhibited a giant magnetoresistance (GMR) behavior.     

Research progress in anisotropic magnetoresistance

Anisotropic magnetoresistance (AMR) is an important physical phenomenon that has broad application potential in many relevant fields. Thus, AMR is one of the most attractive research directions in material science to date. In this article, we summarize the recent advances in AMR, including traditional permalloy AMR, tunnel AMR, ballistic AMR, Coulomb blockade AMR, anomalous AMR, and antiferromagnetic AMR. The existing problems and possible challenges in developing more advanced AMR were briefly discussed, and future development trends and prospects were also speculated.