单线的~(57)Co穆斯堡尔源的制作

穆斯堡尔谱学的发展,希望能获得更理想的穆斯堡尔源。本文报道了为穆斯堡尔实验制作这种源的程序:首先生产出纯度高的~(57)Co,配成电镀液,待~(57)Co沉积在源基体上后,经热扩散后测试所作源的各个参量。     

~(119)Sb穆斯堡尔源制备

一、引言离子注入穆斯堡尔谱学是新近发展起来的研究离子掺杂时引起的晶格微观结构变化的重要手段。用同位素分离器进行放射性离子注入是离子注入穆斯堡尔诺学中最为行之有效的方法,因为它的注入剂量与通常离子注入相比可大大降低。问题是希望能找到满足研究     

~(119m)Sn穆斯堡尔谱学

~(119m)Sn穆斯堡尔诺学从六十年代末期以来有了很大发展,它已深入到各个学科领域,在化学方面的应用尤为突出。1976年,我们首次利用~(119m)Sn穆斯堡尔谱研究新型高级脱氢Pt-Sn体系催化剂和性能优良的稀土钻永磁合金。本文扼要介绍了~(119m)Sn穆氏谱基本原理,重点讨论了应用于上述两个领域的研究成果和前景。 在新型铂-锡脱氢催化剂研究中,~(119m)Sn穆斯堡尔谱的研究不仅表明,铂存在促进了锡还原,(SnO_2)氧化 Pt→PtOx (sn)还原,而且在一定程度上证明非络合浸渍法催化剂中铂与锡的相互作用不及络合法中的强,     

利用压缩原子模型对~(57)Fe穆斯堡尔谱的理论研究

穆斯堡尔同质异能移的基本物理概念已经被知道很长时间了。然而具体的理论表示却一直是人们关心的课题。由于这种超精细相互作用始终涉及核因子和电子因子(或称固体因子)的乘积,给解释这些数据带来困难。近年来,随着大型计算机的使用,人们可以较好地计算核内电子浓度,再利用测量的同质异能移,找出定标常量α来代替核因子,从而大大推动了这方面的研究工作。但是目前关于电子浓度的理论计算,大部分是以自由原子模型为基础的,而当原子被携带在一起形成固体时,这种自由原子是根本不存在的。     

含铁镍金属间键化合物的~(57)Fe穆斯堡尔谱

测定了9个未见报导的新化合物中~(57)Fe的穆斯堡尔谱,每个化合物都含有一个铁镍金属间键。第一组3个化合物的通式为[(C_6H_5)_2PR]_2NiFe(CO)_4(R=CH_3,n-C_3H_7,C_6H_5),其同质异能移在—0.220～—0.260,四极裂距在2.140～2.520。根据文献数据分析,这些化合物中的铁可能具有五配位三角双锥构型,镍基团以一定方式接受了铁的d-电子密度。第二组化合物是第一组化合物分别与外加膦配体反应的产物,通式为[(C_6H_5)_2-     

关于拟合穆斯堡尔谱的AWMI法

解非线性最小二乘问题的常用算法是高斯-牛顿法。它的缺点是迭代的每一步都要进行逆矩阵运算,对参数初估值的要求也比较严。I.A.Slavic提出的不用逆矩阵运算的方法(简记为AWMI法),已被金慧娟等用于穆斯堡尔谱的拟合,认为收敛性很好,计算量也较小。 本文通过理论分析说明按AWMI法的参数修正方向比较接近于x~2量的最快速下降方向,因此在步长不太     

样品有限厚度穆斯堡尔谱失真的修正

将穆斯堡尔谱扣除背景后,用傅立叶分析对穆斯堡尔谱进行有限厚度修正,可以得到理想单色源无限薄样品的穆斯堡尔谱。对Ure-Flinn程序进行了改进。对下列各种样品的穆斯堡尔谱进行了厚度修正:(1)α-Fe标准样品;(2)不同厚度的α-Fe_2O_3样品(3,12、48mg/cm~2);(3)退火状态的Fe-4wt％V合金样品。经修正后各     

Fe~(3 )-Vc体系的穆斯堡尔研究

用穆斯堡尔方法研究了Fe3 Vc体系中铁离子的价态及冻干粉末中Fe2 与大颗粒晶体中Fe2 的差别。结果表明 :Fe3 Vc溶液结晶后 ,大颗粒晶体中还原得到的Fe2 未被空气氧化 ,但Fe2 有 2种配位环境 ,数量比为 2∶3;冻干粉末中Fe2 绝大部分未变成Fe3 ,自然升温冻干的粉末中以其中一种配位环境为主 ,而控温冻干则以另一种配位环境为主。     

~(57)Fe共振过滤γ射线的时间相依性和穆斯堡尔谱

~(57)Fe 14.4keVγ射线的衰变几率在这个态形成后,随时间指数衰减。1960年R.E.Holland观察到当与14.4keV入射γ射线共振的~(57)Fe薄膜用作过滤片(即吸收体)时,由符合测量技术测得的γ射线数目偏离指数型。随后M.Hamermesh和S.Harris分别用经典力学和量子力学的方法推导出理论曲线,经过厚度修正,使理论和实验曲线符合较好。     

从回旋加速器上照过的镍靶中分离~(57)Co

制作穆斯堡尔源~(57)Co的纯度要求很高,杂质含量应小于0.12μg/mCi~(57)Co。稳定性钴含量的增加,使源的线宽加宽甚至发生劈裂现象。降低稳定性钴含量的办法,即可在照射前对靶材料进行纯化,也可在照射后利用核衰变特性和放化分离法相结合,进行钴的同位素分离。本文报导了采用α-粒子轰击镍试制~(57)Co的实验结果。 1.照射靶的制作 天然镍有五种同位素,其中~(58)Ni的丰度最高(67.88％)。α轰击天然镍除得到~(57)Co外,还可生成十多种其     

高温超导体EuBa_2(Cu_(1-x)Fe_x)_3O_(7-y)的穆斯堡尔谱学新研究

利用~(57)Fe和~(151)Eu穆斯堡尔效应对EuBa_2(Cu_(1-x)Fe_x)_3O_(7-y)高温超导体作了研究。在液氮温区,分别测量了样品中有和无电流通过时的~(57)Fe穆斯堡尔谱,结果表明取代了Cu(2)位置的Fe的同质异能位移和四极分裂与通过超导体的电流无关,而取代Cu(1)位置的Fe的穆斯堡尔谱参数则与电流有关。不同Fe含量样品的穆斯堡尔谱分析表明,超导电性和穆斯堡尔谱参数都与Fe的含量有关。     

Effect of Fe ion implantation on tribological properties and Raman spectra characteristics of diamond-like carbon film

1 Introduction It is well known that DLC (diamond-like carbon)prepared by physical vapor deposition, plasma en-hanced chemical vapor deposition (PECVD) and otherplasma processing is an amorphous carbon materialcontaining sp2 and sp3 bonded carbon atoms. DLCfilm possesses some interesting properties, such ashigh hardness and Young's modulus, chemical inert-ness and low friction coefficient. The property andstructure of DLC film can be modified by addingsome metals. Ion implantation…     

从回旋加速器上照过的铁靶中分离~(57)Co

穆斯堡尔效应在许多方面得到广泛应用后,~(57)Co的生产引起了人们的重视。本文报导了从回旋加速器上照过的铁靶中分离出~(57)Co的实验结果。     

Structure and thermal stability of Au–Fe alloy nanoclusters formed by sequential ion implantation in silica

Sequential ion implantation of Au and Fe ions has been performed in silica. Despite the fact that the two species are not miscible in the bulk, structural characterizations show that the nanoparticles produced are a Au–Fe alloy. The crystalline structure of the nanoparticles is fcc with a lattice parameter of 0.395 nm. The nanocomposite is ferromagnetic at 3 K, with a magnetic moment per Fe atom equal to 1.4μ_B and it shows a hysteresis loop with a coercive field of 24 mTorr. Due to alloying, the optical absorption spectrum does not exhibit the typical surface plasmon resonance of gold nanoparticles. The sample exhibits a change of its optical and structural properties when is annealed at 600 °C.     

Formation of amorphous carbon on the surface of poly(ethylene terephthalate) by helium plasma based ion implantation

The surface modification of poly(ethylene terephthalate) (PET) by helium plasma based ion implantation (He PBII) was studied. The effect of the main process parameters (acceleration voltage, fluence and fluence rate) on the alterations of the surface chemical composition and structure were investigated by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy.According to SRIM calculations, at ion energies above 2 keV the stopping power of PET for He⁺ ions is dominated by the electronic component and the contribution of the nuclear component is relatively small. Degradation of the ester group and carbonisation were observed by XPS due to elimination of O-rich fragments. The total C-content of the modified layer increased with the increase of fluence rate and acceleration voltage of particles, enabling the purposeful alteration of the surface composition. A strong broadening was detected in the Raman spectrum between 1000 and 1700 cm⁻¹, testifying to the intense formation of amorphous carbon. The area ratio of the D (∼1410 cm⁻¹) to G (∼1570 cm⁻¹) band increased with the increase of particle fluence and the increase of acceleration voltage, offering the possibility of tailoring the chemical structure of the amorphous carbon layer created by the He PBII treatment.     

质谱检测用同位素15N标记样品的处理方法

采用质谱法分析稳定同位素¹⁵N标记化合物的¹⁵N丰度,进样形式为氮气时,具有记忆效应小、不发生同位素分馏的优点,因此,待测样品处理方法非常关键。选用具有代表性的¹⁵N无机标记化合物和¹⁵N有机标记化合物进行了次溴酸盐氧化还原法、半微量的消化 氧化还原联用法和微量的高温燃烧法等样品处理方法的条件试验,消除了样品转化处理过程中的同位素分馏效应和记忆效应的影响,样品的检测结果准确度和精确度令人满意,误差小于±0.05%。研究得到了具有可行性的样品转化条件和操作方法。采用数理统计方法对得到的质谱检测数据进行检验,获得了满意的结果。     

Influence of the residual oxygen in the plasma immersion ion implantation (PI3) processing of materials

In this work, we investigated the effects of the contaminants present in the vacuum chamber of the PI3 system, in particular, the residual oxygen, which results in the formation of the oxide compounds on the surface and hence is responsible for the high implantation energies required to achieve reasonably thick treated layers. We used a mass spectrometer (RGA) with a quadruple filter to verify the composition of the residual vacuum and pressure of the elements present in the chamber. Initially we found a high proportion of residual oxygen in a vacuum with a pressure of 1 × 10⁻³ Pa. Minimizing the residual oxygen percentage in about 80%, by efficient cleaning of the chamber walls and by improving the gas feeding process, we mitigated the formation of oxides during the PI3 process. Therefore we achieved a highly efficient PI3 processing obtaining implanted layers reaching about 50 nm, even in cases such as an aluminum alloy, where is very difficult to nitrogen implant at low energies. We performed nitrogen PI3 treatment of SS304 and Al7075 using pulses of only 3 kV and 15 × 10⁻⁶ s at 1 kHz with an operating pressure of 1 Pa.