硅/碳化硅材料显微特征与强度关系研究

通过改变坯体碳/碳化硅质量比,采用反应烧结方法制备了不同硅相含量和次生碳化硅分布形式的硅/碳化硅复合材料。探讨了该复合材料不同显微组织的形成机理。用三点弯曲法评价了材料强度与显微组织的关系,结合断口断裂模式,从热失配引起颗粒周围残余应力和界面能两个方面对强度-组织之间的关系进行了定性讨论。结果表明,硅/碳化硅相体积含量、碳化硅分布形态、热失配导致的残余应力是影响材料强度的主要因素,优化制备工艺参数是获得高性能材料的关键。     

渗硅碳化硅材料结构与性能关系的研究

采用低廉石油焦碳分为原料制造全碳粉生坯，通过有机添加剂来调配生坯中碳的比例，以控制烧结体中游离硅（fsi）、游离碳（fC）含量（其中fs,fc为烧结中未反应的硅和碳），研究了全碳粉反应硅碳化硅（PCRSC）材料的结构与力学性能的关系，分析了渗硅碳化硅材料中游离硅、游了碳含量对抗弯强度的影响。结果表明：渗硅碳化硅材料中随游离硅含量的增加，其抗弯速度下降，并且二者呈直线关系，符合线性复合规则，另一方面，游离碳含量较高的渗硅碳化硅材料，尽管游离硅含量低，但其抗弯强度低于等量或较多游了硅含量的渗硅碳化硅材料的抗弯强度。     

钛酸铝陶瓷热电偶保护管的试制

以工业氧化铝和钛白粉为基本原料、滑石为添加剂，采用注浆成型工艺，试制出了钛酸铝陶瓷热电偶保护管。     

碳化硅材料中游离硅及游离碳对性能的影响

研究了全碳粉反应渗硅碳化硅（PCRBSC）材料的结构与力学性能的关系。分析了渗硅碳化硅材料中游离硅（fsi),游离碳（fc)含量对抗折强度的影响。结果表明：参硅碳化硅材料中随游离硅（fsi)含量的增加,其抗折强度下降,并且二者呈直线关系,符合线性复合规划,另一方面,游离碳（fc)含量较高的渗硅碳化硅材料,尽管游离硅（fsi)含量低,但其抗折强度低于等量或较多游离硅（fsi)含量的渗硅碳化硅材料的抗折强度。     

高温处理对渗硅碳化硅性能的影响

研究了全碳粉反应渗硅碳化硅（PCRBSC）材料在1700℃高温氩气氛中4h的处理,研究结果表明,RCPBSC材料的结构对高温处理后的强度有很大的影响,特别是游离硅sfi,游离碳fc的含量明显影响高温处理后PCRBSC材料的抗折强度。     

碳化硅微粉中去除硅和二氧化硅工艺的研究

本文主要研究了除去碳化硅微粉中硅和二氧化硅的方法及最佳工艺条件.     

高温处理对渗硅碳化硅性能的影响

研究了全碳粉反应渗硅碳化硅（ＰＣＲＢＳＣ）材料在１７００℃高温氩气氛中４ｈ的处理,研究结果表明：ＰＣＲＢＳＣ材料的结构对高温处理后的强度有很大的影响,特别是游离硅ｆｓｉ、游离碳ｆｃ的含量明显影响高温处理后ＰＣＲＢＳＣ材料的抗折强度。     

利用自结合碳化硅制造的结构材料

列举了关于利用自结合碳化硅制造新型陶瓷的材料。采用由绿色碳化硅粉调制的热泥浆进行浇注的工艺,排出结合剂,用碳使气孔饱和,随后用半导体纯度的硅废料溶体进行渗硅的方法制成了密度为3.0g·cm-3及横向抗折强度为330MPa的自结合碳化硅。用该材料制造断面形状复杂的制品,使先前开发的OTM-923材料达到最佳化。采用半干法成型,可使其强度从187MPa提高到220MPa,从而扩大了其应用范围。     

三维针刺碳/碳化硅刹车材料的摩擦磨损性能

采用单向加压浸渍、加压固化和碳化制备了密度为1.20g/cm3的多孔碳纤维增强碳(carbon fiber reinforced carbon,C/C)复合材料,然后利用反应熔体浸渗法制备了密度为2.11g/cm3的低成本三维针刺碳纤维增强碳化硅(carbon fiber reinforced silicon carbide,C/SiC)刹车材料,研究了材料的微结构和摩擦磨损性能.结果表明:随刹车速度升高,刹车盘的平均磨损率逐渐升高,而平均摩擦系数先升高后降低,刹车速度为15m/s时,摩擦系数达到最大值0.57.低速刹车时摩擦系数曲线光滑、平稳上升;高速时曲线出现波动,存在"翘尾".低速刹车时磨屑为大颗粒,摩擦面上犁沟明显;高速时宏观犁沟消失,微米级磨屑弥散分布于摩擦面.     

逆反应烧结制备铝电解槽用氮化硅-碳化硅复合材料

采用常规的反应烧结工艺制作铝电解槽侧壁材料用Si3N4／SiC时存在不足，为此，提出应用逆反应烧结工艺进行生产性试验的设想。在制备Si3N4／SiC复合材料时，常规反应烧结是以Si和SiC为原料经氮化烧结；逆反应烧结是以Si3N4和SiC为原料，首先使Si3N4反向反应生成活性氧化物后进行烧结。结果表明：该工艺特点是新生的Si2N2O或SiO2进行活性烧结；制品具有良好的物理和化学性能。制品结构紧密，新生氧化物或亚氧化物紧密地充填在Si3N4和SiC颗粒间界，新工艺制备的砖的抗冰晶石熔体侵蚀的性能优于常规工艺烧成砖，是铝电解槽侧壁的良好材料。     

Thermal conductivity mapping of oxidized SiC/SiC composites by time-domain thermoreflectance with heterodyne detection

Silicon carbide/silicon carbide (SiC/SiC) composites are often used in oxidizing environments at high temperatures. Measurements of the thermal conductance of the oxide layer provide a way to better understand the oxidation process with high spatial resolution. We use time-domain thermoreflectance (TDTR) to map the thermal conductance of the oxide layer and the thermal conductivity of the SiC/SiC composite with a spatial resolution of 3 μm. Heterodyne detection using a 50-kHz-modulated probe beam and a 10-MHz-modulated pump suppresses the coherent pick-up and enables faster data acquisition than what has previously been possible using sequential demodulation. By analyzing the noise of the measured signals, we find that in the limit of small integration time constants or low laser powers, the dominant source of noise is the input noise of the preamplifier. The thermal conductance of the oxide that forms on the fiber region is lower than the oxide on the matrix due to small differences in thickness and thermal conductivity.     

Si3N4／纳米SiC复相陶瓷的研究

采用纳米ＳｉＣ粉体制备了Ｓｉ３Ｎ４／纳米ＳｉＣｐ复相陶瓷。研究了制备工艺、纳米ＳｉＣ含量对材料性能及显微结构的影响,并对材料显微结构特点与强韧化机制进行了分析 。结果表明：添加２０ｖｏ％〈１００ｎｍ的ＳｉＣ粉体时,复相陶瓷的室温抗弯强度达８５６ＭＰａ,当添加１０ｖｏ％上述ＳｉＣ粉体时,复相陶瓷的增韧效果最佳,断裂韧性达８．２７ＭＰａｍ＾１／２,比基体材料提高了２３％。     

Effect of Carbon Containing Materials on Pure Carbon Reaction-bonded SiC

Petroleum coke, graphite, gas carbon and lower sulfur carbon black were used to prepare reaction-bonded silicon carbide. The influences of different carbon containing materials on properties of carbonaceous precursors, sintering process, and microstructure of the prepared SiC were researched. The results show that ： （ 1 ） With the density of carbon containing materials increasing, the porosity of carbonaceous precursors decreases and the infiltrating process of liquid silicon is more difficult. （2） The reaction between carbon containing materials and liquid silicon, the volume effect is more obvious with the density of carbon containing materials increasing. （3） As the carbon containing materials density decreasing, residual carbon in reaction bonded SiC also decreases.     

Preparation of SiC/SiC Composites by Hot Pressing, Using Tyranno-SA Fiber as Reinforcement

The development of advanced Tyranno SA SiC fiber with a near-stoichiometric composition and a well-crystallized microstructure has made it possible to prepare SiC/SiC composites even under harsh conditions. To assess the reinforcing effectiveness of Tyranno SA fiber at high temperature under pressure, unidirectional SiC/SiC composites were prepared by hot pressing, using pyrolytic carbon (PyC)-coated Tyranno SA fiber as a reinforcement and nanopowder SiC with sintering additives for matrix formation. The effects of sintering conditions on the microstructural evolution and mechanical properties of the composites were characterized. As the sintering temperature increased (from 1720° to 1780°C) and the sintering pressure increased (from 15 to 20 MPa), the density of the composites gradually increased. Simultaneously, the elastic modulus, the proportional limit stress, and the strength, under both bend and tensile tests, also improved. At lower temperature and/or pressure, long fiber pullout was a predominant fracture behavior, indicating relatively weak fiber/matrix bonding. However, at high temperature and/or pressure, short fiber pullout became a main fracture characteristic, indicating relatively strong fiber/matrix bonding. These phenomena were also confirmed by the characteristics of the hysteresis loops derived from the stress–strain curves produced by a tensile test with unloading–reloading cycles. In the present investigation, the reinforcement of Tyranno SA fiber is effective for providing noncatastrophic fracture behavior to composites.     

逆反应烧结制备碳化硅/氮化硅复合材料的工艺

制备Si3N4／SiC复合材料的常规反应烧结是以Si和SiC为原料进行氮化烧结,而逆反应烧结是以Si3N4和SiC为原料,首先使Si3N4反向反应为活性氧化物后再进行烧结。建立逆反应烧结工艺制备Si3N4／SiC复合材料的热力学基础。确定了Si3N4先于SiC氧化;氧化产物可以是SiO2,也可以是Si2N2O;形成的SiO2氧化膜不会与基体材料反应;在膜与基体之间可能生成Si2N2O。论证了逆反应烧结的热力学可行性。通过6个烧结实验,证实了其热力学分析的正确性,并从工艺参数与密度变化、残氮率和比强度等关系筛选出最佳的烧结工艺参数。     

SiCp／Si3N4复合材料的低温冷处理与强韧化

研究了ＳｉＣｐ粒径与ＳｉＣｐ／Ｓｉ３Ｎ４复合材料的抗弯强度和断裂韧性之间的关系，详细探讨了低温冷处理对材料性能的影响。研究结果表明，ＳｉＣｐ颗粒增加粒径范围为３０～５０μｍ增强的粒径范围为〈２５μｍ，低温冷处理不仅可以进一步提高强度和韧性，而且可以改变增韧的粒径范围，使增韧和增强的粒径范围部分重合，这为正确材料的强韧化设计和合理制定强韧化工艺提供了依据。     

Effect of Interfacial Reaction on the Thermal Conductivity of Al–SiC Composites with SiC Dispersions

The effect of interfacial reactions between Al and SiC on the thermal conductivity of SiC-particle-dispersed Al-matrix composites was investigated by X-ray diffraction and transmission electron microscopy (TEM), and the thermal barrier conductance ( h _c) of the interface in the Al–SiC composites was quantified using a rule of mixture regarding thermal conductivity. Al–SiC composites with a composition of Al (pure Al or Al–11 vol% Si alloy)–66.3 vol% SiC and a variety of SiC particle sizes were used as specimens. The addition of Si to an Al matrix increased the thermal barrier conductance although it decreased overall thermal conductivity. X-ray diffraction showed the formation of Al₄C₃ and Si as byproducts in addition to Al and SiC in some specimens. TEM observation indicated that whiskerlike products, possibly Al₄C₃, were formed at the interface between the SiC particles and the Al matrix. The thermal barrier conductance and the thermal conductivity of the Al–SiC composites decreased with increasing Al₄C₃ content. The role of Si addition to an Al matrix was concluded to be restraining an excessive progress of the interfacial reaction between Al and SiC.     

Microstress in the matrix of a melt‐infiltrated SiC/SiC ceramic matrix composite

Microstress in the SiC: Si matrix of a ceramic matrix composite (CMC) has been characterized, using Raman spectroscopy. The matrix of the composite was manufactured using liquid melt infiltration, and has about 20% unreacted free silicon. During the processing of the composite, the unreacted free silicon expands 11 vol% when transforming from liquid to solid. This crystallization expansion creates compressive microstress in the silicon phase of the matrix, which ranges from 2.4 to 3.1 GPa, and tensile microstress in the SiC of the matrix which ranges from 0.24 to 0.75 GPa. The microstress varies significantly with position, following a normal distribution.     

SiC纳米粉体悬浮液导热系数研究

本文作采用非稳态热丝法,测量了水中加平均粒为25nm的碳化硅粉（简称n-SiC),乙二醇中加n-SiC,水中加平均粒径为0.6μm的碳化硅粉（简称μ-SiC）和乙醇中加μ-SiC等4个系列不同固体积含量悬浮液的有效热系数,实验结果表明：对于所研究的悬浮液,其有效导热系数相对增加量随固相加入量的增加而线性增加;固相颗粒形貌对有效导热系数相对增加量有显著影响;基体液体虽对有效导热系数相对增加量无明显影响,但有效导热系数的绝对量由基体液体的导热系数决定。