MOSFET衬底电流模型及参数提取

在短沟道ＭＯＳＦＥＴ器件物理的基础上,导出了其衬底电流解析模型,并通过实验进行了模型参数提取。模型输出与短沟ＭＯＳＦＥＴ实测结果比较接近,可应用于ＶＬＳＩ／ＵＬＳＩ可靠性模拟与监测研究和亚微米ＣＭＯＳ电路设计。     

多胞MOSFET器件的射频建模和参数提取

对纳米级金属氧化物半导体场效应管器件提出了改进的小信号模型.该改进模型中综合考虑了馈线的趋肤效应和器件多胞结构的影响.提取过程中, 根据可缩放规律, 由传统模型的参数推导出元胞参数.将模型应用于8×0.6×12 μm (栅指数×栅宽×元胞数量)、栅长为90 nm的MOSFET器件在1~40 GHz范围内的建模, 测试所得S参数和模型仿真所得S参数能够高度地吻合.     

一个适用于模拟电路的深亚微米SOIMOSFET器件模型

从数值解源端和饱和点的表面电势出发 ,考虑模拟电路对 SOI MOSFET模型的一些基本要求如电荷守恒、器件源漏本征对称、各个工作区间连续并且高阶可导以及全耗尽和部分耗尽两种工作模式的转变 ,构建了一个能够满足这些要求的精确的器件模型 .同时包含了深亚微米 SOI MOSFET的一些二级效应如漏极诱生势垒降低效应 (DIBL )、速度饱和效应、自热效应等 .这个模型的参数相对较少并且精确连续 ,能够满足在模拟电路设计分析中的应用要求     

多端口T/R组件的单通道噪声系数测试方法

多端口T/R组件输出端口的噪声由各个通道共同决定,要测试单独通道的噪声系数非常困难。提出了一种基于衰减器改变的多端口TR组件单通道噪声系数测试方法,消除了其他通道的噪声影响,实现了对单独通道噪声系数的测试。通过测试一个8通道T/R组件的各个通道噪声系数,与单独通道测试结果进行了对比,两种方法测试结果最大差异为0.08 dB,验证了该方法可以很准确地测量多端口网络的单通道噪声系数。     

短沟道MOSFET器件物理模型研究

通过求解经修正的二维泊松方程，并考虑了主要的短沟效应和高场效应，得到一个描述短沟道ＭＯＳＦＥＴ器件Ｉ－Ｖ特性的统一物理模型。该模型适用于包括亚阈区在内的不同工作区域，对０．８μｍ和１．４μｍ器件的漏极电流特性能较好地描述，可应用于亚微米、深亚微米级ＭＯＳＦＥＴ的电路模拟。     

110 GHz铟磷异质结双极晶体管小信号模型参数提取方法

介绍了一种可以用于频率高达110GHz的InP基HBT小信号模型模型参数提取方法, 并且在所提出的模型中考虑了基极馈线的趋肤效应.该方法将直接提取和优化技术相结合, 将本征参数描述为寄生电阻的系列函数进行后续优化.实验结果表明在2～110GHz频率范围内S参数吻合很好.     

半导体激光器大信号等效电路模型的参数提取

本文提出了一种由半导体激光器（ＬＤ）的外特性，如端口电特性和小信号频率响应，确定其大信号等效电路模型参数的新方法。并对一个ＩｎＧａＡｓＰ脊形波导ＬＤ和一个隐埋异质结ＬＤ进行了参数提取。这种方法，不需要了解ＬＤ的内部特性，分析的结果与已报道的理论、实验值一致。     

一种新颖的HBT小信号模型参数直接提取方法

提出了一种改进了的HBT小信号参数直接提取的方法。该方法中在提取极间寄生参数的基础上采用fly-back技术提取发射极和集电极电阻,降低了传统的采用集电极开路的方法提取全部电阻参数的复杂度,并且建立了一套完整的直接提取HBT小信号模型的新方法。与文献报道的小信号模型参数提取的方法相比,该方法的优点是,提取过程具有简明清晰的物理意义,提取速度快,并且具有较好的精度和较宽频带范围的可实用性。     

A unified short-channel compact model for cylindrical surrounding-gate MOSFET

For the first time, a continuous and explicit model valid in all operating regions, for undoped short-channel cylindrical gate-all-around (GAA) MOSFETs, is presented in this study. From a two-dimensional analysis, the threshold voltage roll-off, the drain-induced barrier lowering (DIBL) and the subthreshold swing are explicitly modeled. Short-channel effects are then implemented into a continuous drain-current model based on an effective surface potential approach using the gradual channel approximation. Improving the model behavior in the saturation operating region by accounting the channel pinch-off displacement, channel length modulation is studied and implemented as well. Analytical results are compared to TCAD-Atlas numerical simulations and validate the short-channel model in all operating modes making it suitable for circuit design simulations.     

一种新颖的HEMT小信号模型参数直接提取方法

建立了一套完整的直接提取高电子迁移率器件(HEMT)小信号模型等效电路参数的新方法。采用Open去嵌图形对器件寄生电容进行近似提取,避免了ColdFET方法提取的寄生参数为负值的现象;通过Yong Long方法对寄生源电阻进行提取,减少了模型参数提取复杂度。与其它文献报道的小信号模型参数提取方法相比,该方法物理意义简明清晰,提取速度快,并且对新材料、新器件结构有较强的实用性。     

On the limitations of transimpedance amplifiers as tools for low-frequency noise characterization

An experimental set-up for the characterization of low-frequency noise on two terminal devices is reported. The experimental set-up is based on the use of the commercial transimpedance amplifier (TA) EG&G5182. This paper addresses the influence of the TA on the noise characterization process by describing the TA as a non-ideal operational amplifier with a feedback resistor. The impact of the TA finite input resistance and voltage gain is highlighted through comparison with measurements carried out on resistors and diodes.     

A new small-signal MOSFET model and parameter extraction method for RF IC's application

In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10 GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance g_m, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered.     

Extraction method for polycrystalline TFT above and below threshold model parameters

A procedure is presented to extract above and sub-threshold model parameters in polysilicon TFTs. It is based on the integration of the experimental data current, which has the advantage of reducing the effects of experimental noise. This method is applied to the linear and saturation regions for the above-threshold regime and allows the extraction of all the above-threshold and sub-threshold parameters. We already presented a unified extraction method for the above threshold parameters of a-Si:H and polysilicon TFTs, where the above-threshold regime the mobility is modeled as a function of the gate voltage to a power. An integration procedure is used to extract the device model parameters. In this paper, we complete the extraction procedure to cover all the device operation regions, that is the sub-threshold and above-threshold regimes. The extraction procedure provides in addition the possibility of monitoring the crystallization process of a-Si:H TFTs into polysilicon, which has become a widely used process of fabricating low temperature polysilicon TFTs. The process of polycrystallization manifests itself by a variation and change in sign of one of the model parameters. Extracted parameters can be correlated to input parameters required by AIM-Spice circuit simulator for device modeling. The accuracy of the simulated curves using the extracted parameters is verified with measurements.     

毫米波肖特基二极管表征和在片测试方法

本文分析了单口和双口毫米波频段肖特基二极管的测试方法并设计了相应的测试版图,计算了截止频率随寄生电阻和零偏本征电容的变化曲线,给出了小信号和大信号等效电路模型。利用两个实际肖特基二极管测试实例对器件的小信号模型参数进行了提取,实验结果表明,在导通和截止的S参数吻合较好。     

一种新的HEMT小信号模型参数提取方法

介绍了一种高电子迁移率晶体管(HEMT)的小信号参数提取方法——综合多偏置点优化参数提取法。该文首先推导并提出了器件的模型、确定外部参数和内部参数，其次介绍了多偏置点优化算法。最后，以PHEMT器件为例进行鲁棒性和精确性测试，实验采用一系列随机起始值，结果表明，提取的参数值与经验值相差小于1％。     

Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects

An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency.     

Impact of latch phenomenon on low-frequency noise in SOI MOSFETs

The low-frequency noise in fully (FD) and partially (PD) depleted SOI MOSFETs is experimentally investigated for channel lengths down to 0.1 μm. The noise is discussed in terms of carrier number and mobility fluctuations for a wide range of SOI structures. Furthermore, the influence of the latch effect on low-frequency noise is analyzed. It is found that the flicker noise is mainly caused by the carrier number fluctuations due to the dynamic trapping of electrons (or holes) by oxide interface traps in all the SOI devices. However, an excess noise is also obtained in the presence of a parasitic bipolar action.     

一种采用自适应测角噪声的交互多模型跟踪方法

针对转换瑞利滤波器(SRF)由于测角误差先验信息不准确而导致跟踪性能退化的问题,提出了一种基于交互式多模型转换瑞利滤波器(IMM-SRF)的目标跟踪方法。该方法采用多个不同测角噪声水平的SRF模型进行滤波,并且通过对滤波结果的自适应加权融合解决测角误差未知的问题。与SRF方法相比,该方法无需测角误差的先验信息,鲁棒性和实用性更好。仿真结果表明,IMM-SRF方法可实现对匀速运动和曲线运动目标的准确跟踪,并且收敛速度也较快,验证了所提方法的有效性。     

氮化镓功率器件小信号模型参数提取算法研究

针对氮化镓高电子迁移率晶体管(GaN High Electron Mobility Transistor,GaN HEMT)小信号等效电路模型参数提取和优化过程中存在的误差累计问题,基于GaN HEMT 19元件小信号模型,提出了一种扫参与迭代相结合的参数提取算法.该算法在迭代过程中,每次使用比前一次更准确的元件值进行计算,可使结果趋向最优解.通过Mat-lab编程实现后计算结果表明,仿真与实测S参数在0.1～40 GHz频率范围内吻合良好.     

Application of a combined methodology for extraction of the electrical model of a lead frame chip-scale package

An ultra-miniature interconnect (IC) package such as a chip-scale package (CSP) provides a difficult challenge in electrical model extraction, particularly to multi-GHz frequencies, because the very small parasitics can easily be swamped by test fixture parasitics and/or by small measurement errors that might be negligible in a larger package. Incomplete data for the high-frequency electrical properties of package materials and small dimensional errors in physical model entry into electromagnetic (EM) simulators, again negligible in larger packages, may also cause significant error. Therefore, for ultra-miniature packages it is necessary to cross-correlate multiple measurement and simulation methods to ensure that an accurate package electrical model is obtained. This paper therefore presents a closed-loop cross-correlation of s-parameter and time domain reflectometry (TDR) measurements with EM simulation and TDR simulation for a 16-pin lead frame chip-scale package (LFCSP) and the extraction of a cross-verified electrical model to 10 GHz. The authors are not aware of the previous application of these multiple techniques to a CSP to this bandwidth.