用离子束溅射法制备长波段X射线多层膜

叙述了用离子束溅射镀膜机ＯＸＦＯＲＤ进行Ｘ射线长波段多层实验及制备Ｘ躬一多层膜光学元件方面的工作。简述离子束溅射镀膜机的工作原理,Ｘ射线多摹制备过程,主要工艺参数,以及用Ｘ射线小角衍射仪对制备样品周期结构的检测和用软Ｘ射线反射率计测反射率的部分结果。     

用离子束溅射法制备X射线多层膜的实验和工艺

叙述了用离子束溅射镀膜机进行X射线波段多层膜镀膜实验及制备X射线多层膜光学元件方面的工作，简述离子束溅射镀膜机的工作原理，X射线多层膜的制备过程，主要工艺参数及注意事项，以及用X射线小角衍射仪对制备样品进行检测的部分结果。     

用磁控溅射法制备软X射线多层膜

本文介绍用直流-射频平面磁控溅射法制备软x射线多层膜的初步实验结果。在一定工艺条件下,采用计算机定时控制膜厚的方法,严格按照设计周期制备了多层膜样品,并给出了X射线衍射仪小角衍射的检测结果。     

同步辐射软X射线多层膜反射率计的设计

分析了同步辐射软X射线多层膜反射率计;介绍了单色器系统、反射率计系统、真空系统以及双重二倍角机构的设计要点。     

C/Al软X射线多层膜反射镜的制备与测量

在λ＝ ２８．５ｎｍ 波长处,我们选择了一种新的多层膜材料对Ｃ／Ａｌ。正入射Ｃ／Ａｌ多层膜在１５．０ｎｍ 附近有很低的二级衍射峰。磁控溅射法制备的Ｃ／Ａｌ多层膜样品,用Ｘ射线小角衍射法对其结构进行了测试,并测得Ｃ／Ａｌ软Ｘ射线多层膜的正入射反射率２２％ ±４％ 。     

膜厚控制误差对软X射线多层膜性能影响的分析

针对影响多层膜性能的关键因素———膜厚控制误差进行了全面的分析计算,指出影响多层膜性能的主要误差是仪器本身的系统偏差,它使多层膜的峰值反射波长偏离设计值,使得制作出的多层膜无法满足要求;镀膜过程中的随机误差使多层膜的反射率降低,但不影响多层膜峰值反射率波长的位置,因此,在制作多层膜过程中,不但要严格控制镀膜时的系统误差,而且要控制随机误差。     

高反射率13nmMo／Si多层膜

采用离子束溅射在不同的工艺参数下制备一系列单层Mo膜、Si膜及多层膜,并用原子力显微镜分析单层膜表面粗糙度及两种材料间的界面扩散.当束流电压超过一定数值时,可避免单层膜的柱状生长;在Mo-on-Si和Si-on-Mo界面中,Mo-on-Si界面扩散对反射率的影响更大.采用X射线衍射仪分析多层膜中Mo、Si材料的晶体结构,均为多晶结构,其中Mo为(110)晶向,Si为(400)晶向.根据上述分析优化工艺参数,获得的13nmMo/Si多层膜反射率达到60%.     

高反射率13nmMo/Si多层膜

采用离子束溅射在不同的工艺参数下制备一系列单层Mo膜、Si膜及多层膜,并用原子力显微镜分析单层膜表面粗糙度及两种材料间的界面扩散.当束流电压超过一定数值时,可避免单层膜的柱状生长;在Mo-on-Si和Si-on-Mo界面中,Mo-on-Si界面扩散对反射率的影响更大.采用X射线衍射仪分析多层膜中Mo、Si材料的晶体结构,均为多晶结构,其中Mo为(110)晶向,Si为(400)晶向.根据上述分析优化工艺参数,获得的13nmMo/Si多层膜反射率达到60%.     

高反射率13nmMo/Si多层膜

采用离子束溅射在不同的工艺参数下制备一系列单层 Mo膜、Si膜及多层膜 ,并用原子力显微镜分析单层膜表面粗糙度及两种材料间的界面扩散。当束流电压超过一定数值时 ,可避免单层膜的柱状生长 ;在 Mo- on- Si和 Si- on- Mo界面中 ,Mo- on- Si界面扩散对反射率的影响更大。采用 X射线衍射仪分析多层膜中 Mo、Si材料的晶体结构 ,均为多晶结构 ,其中 Mo为 ( 1 1 0 )晶向 ,Si为 ( 4 0 0 )晶向。根据上述分析优化工艺参数 ,获得的 1 3nm Mo/Si多层膜反射率达到 60 %。     

28.4nm和30.4nm波段的C/Si多层膜

对于宇宙的探讨,特别是对太阳大气层的研究,需要用Ｘ射线、极紫外及远紫外波段望远镜来观测。我们报道了一种新的材料组合Ｃ／Ｓｉ用于２８．４ｎｍ（４３．６５ｅＶ）和３０．４ｎｍ （４０．７８ｅＶ）波段的多层膜反射镜,并且用离子束溅射装置制备了正入射条件下的Ｃ／Ｓｉ多层膜反射镜。同时,我们用软Ｘ射线反射计测量了其反射率,在正入射条件下测得最大反射率达１４％ （３０．４ｎｍ ）。     

软X射线多层膜成像系统带宽匹配条件研究

从多层膜反射软X射线的特性出发,分析了两块多层膜组成系统的光强传输效率和位相变化关系,给出了成像系统带宽匹配条件。     

用透射光栅谱仪测量多层膜的反射特性

软X射线多层膜是当前应用光学和工程光学的研究热点之一,反射率是其性能和膜层质量最直观的参数,它的测量对了解多层膜性能和改进多层膜制备工艺具有重要意义。本文介绍采用带有前置光学系统的大面积透射光栅光谱仪分光,让软X射线多层膜反射+1级或-1级软X射线,用国产的SIOFM型X射线胶片接受软X射线,通过测量可定性地判断多层膜制备质量,为改进多层膜制备工艺提供重要的参考依据。     

Application of ion beam sputtering for high-resolution electron microscopy

Ion beam sputtering for high-resolution electron microscopy has basically provided miscellaneous operational features such as atomic shadowing, uncoated observation, and etching of biological specimens coupled with tungsten sputter coating and thinning of solid materials. Based on the power-potential law of Lindhard for ionic impact phenomena on metal surfaces, the universal yield-energy relationship has been derived. Thereby the sputtering deposition rate with reference to the sputtering removal rate was obtained as a function of sputtering yield, and the most important angular distribution of sputtering yield could be measured by using the hemicylindrical specimen stage. Evidence is presented to show that ion beam sputtering has become one of the most powerful tools for high-resolution electron microscopy.     

Multilayer Fresnel zone plate for soft X-ray microscopy resolves sub-39nm structures

Best resolutions in X-ray focusing are obtained to date by using diffractive lenses called Fresnel zone plates (FZPs). Their further improvement is nevertheless hindered by fundamental limitations in the employed manufacturing techniques. Here, we show a novel method to fabricate FZPs based on multilayer deposition with atomic layer deposition (ALD) and subsequent sectioning with focused ion beam (FIB). For the first time a multilayer FZP working in the soft X-ray range was prepared and could achieve the best resolution obtained so far for multilayer FZPs by resolving features below 39 nm in size in a scanning soft X-ray microscope. The new technique presents high potential for high resolution microscopy in both the soft and hard X-ray range.     

Measures for spectral quality in low-voltage X-ray microanalysis

Characteristic x-ray production with energetic electrons depends strongly on the overvoltage, the ratio of the incident beam energy to the critical excitation energy for the atomic species of interest. Low-voltage x-ray microanalysis (beam energy < or = 5 keV) is especially susceptible to artifacts due to sample charging because the overvoltage is low and even slight charging can strongly affect peak intensities. The Duane-Hunt bremsstrahlung limit is a good diagnostic to detect sample charging. Dynamic charging effects, however, can influence spectra despite an apparently satisfactory Duane-Hunt limit. Dynamic charging effects must be examined by time series experiments, or through use of dynamic energy windows continuously measuring count rates placed across the spectrum. When charging is a problem, conductive surface coatings can eliminate the effects. When pristine surfaces must be examined without coating, the use of a conductive grid can control charging so that useful x-ray spectra can be obtained.