HgTe／CdTe超晶格的分子束外延生长和电容－电压谱研究

在ｐ－型ＨｇＴｅ／ＣｄＴｅ超晶格材料上制作金属－绝缘体－半导体（ＭＩＳ）结构．报道了ＨｇＴｅ／ＣｄＴｅ超晶格的分子束外延生长、器件制作和测量结果．研究表明，比较宽的ＣｄＴｅ势垒阻碍了少子（电子）到界面的迁移，在７７Ｋ强反型区域的低频电容不能达到绝缘层电容，类似于普通ＭＩＳ器件的高频Ｃ—Ｖ曲线．     

Parameter Calculation and Investigation of a MIS Varicap with Charge Transfer for L-Range Microwave Devices

The characteristics of a MIS varicap with charge transfer designed for control microwave devices are analyzed. The limiting frequency of the device is shown to be at least twice as high as that of the standard MIS varicap based on a MIS system with a thicker dielectric in the varicap with charge transfer. A method for parameter measurements in the microwave range is developed. Some device samples are fabricated based on thin substrates of monocrystalline silicon with epitaxial layers. The correspondence between the theoretical and experimental characteristics of the varicap is established.     

Recent progress in MIS solar cells

Metal–insulator–semiconductor (MIS)-type solar cells have an inherent cost advantage compared to p-n junction solar cells. First-generation MIS–inversion layer (MIS–IL) solar cells, already successfully produced in an industrial pilot line, are restricted to efficiencies of 15–16%. With the second-generation MIS–IL silicon solar cells, based on drastically improved surface passivation by plasma-enhanced chemical vapour-deposited silicon nitride, simple technology can be combined with very high efficiencies. The novel inversion layer emitters have the potential to outperform conventional phosphorus-diffused emitters of Si solar cells. A 17.1% efficiency could already be achieved with the novel point-contacted ‘truncated pyramid’ MIS–IL cell. A new surface-grooved line-contact MIS–IL device presently under development using unconventional processing steps applicable for large-scale fabrication is discussed. By the mechanical grooving technique, contact widths down to 2 μm can be achieved homogeneously over large wafer areas. Bifacial sensitivity is included in most of the MIS-type solar cells. For a bifacial 98 cm² Czochralski (Cz) Si MIS-contacted p-n junction solar cell with a random pyramid surface texture and Al as grid metal, efficiencies of 16.5% for front and 13.8% for rear side illumination are reported. A 19.5% efficiency has been obtained with a mechanically grooved MIS n⁺p solar cell. The MIS-type silicon solar cells are able to significantly lower the costs for solar electricity due to the simple technology and the potential for efficiencies well above 20%.©1997 John Wiley & Sons, Ltd.     

InSb电荷注入成像阵列

采用InSb MIS技术已成功研制出线列和面阵型自扫描3～5μm红外焦平面器件。本文介绍了InSb MIS结构理论和界面电学特性分析;结构设计和工艺实现途径。介绍了器件性能结果。     

Au／CdTe＋ZnS／HgCdTe双层介质膜MIS器件的制备及研究

通过介质膜ZnS、CdTe薄膜材料的Ar^ 束溅射沉积研究,结合HgCdTe器件工艺,成功制备了以ZnS、CdTe双层介质膜为绝缘层的HgCdTe MIS器件;通过对器件的C－V特性实验分析,获得了CdTe/HgCdTe界面电学特性参数。实验表明：溅射沉积介质膜CdTe ZnS对HgCdTe的表面钝化已经可以满足HgCdTe红外焦麦面器件表面钝化的各项要求。     

本征α－Si：H中隙态的时间常数及俘获截面

制成一批本征α－Ｓｉ：Ｈ的金属－绝缘体－半导体（ＭＩＳ）结构；用高精密差分电容谱仪测量了这种结构在５０℃时的电容、电导谱；通过修正获得了由隙态决定的电导并求得了隙态俘获电子的时间常数及截面。     

The Physics of Failure of MIS Devices Under Radiation

Unlike the solar cell and the NPN transistor, the MOS device does not sustain a degradation as the principal effect of exposure to nuclear radiation. Instead, the MOS device undergoes a change of operating region, the change being in the nature of a parallel shift of the characteristic curve of the device, produced by the trapping of radiation-excited holes within the 2000-? insulator and the consequent buildup of a fixed bulk space charge in the insulator. Less significant changes under radiation are variations in the shape of the characteristic curve and increased leakage current. These are genuine degradation effects and are closely analogous to the strong effects of ionizing radiation in planar-passivated junction devices such as bipolar transistors, SCRs, diodes, etc. In the latter cases, the devices are acting as MIS devices and hole trapping in the oxide is again responsible for their degradation. A consideration of the case of simple MIS devices under radiation is thus found helpful in elucidating some other important types of failure under radiation of silicon junction devices.     

A power SIPOS MISS device

Power metal-insulator-silicon-switch (MISS) devices fabricated using semi-insulating polysilicon (SIPOS) for the insulator layer are discussed. The SIPOS MISS devices have an active area of 4.5 mm² and can carry in excess of 8 A. The typical switching voltage of these devices is 20 to 25 V with a negative temperature coefficient. They have a typical switching time of 200 ns and a very fast turn-off time. No degradation in device performance is observed after high current pulsing. Power SIPOS MISS devices offer an alternative to conventional four-layer switching devices, yielding faster switching characteristics while maintaining process compatibility     

高增益、低h_(FE)温度系数硅横向MIS隧道结晶体管

设计并研制出直流电流增益为842、交流电流增益为1080的高增益挂横向MIS隧道晶体管。测量了器件的电学特性和hFE的温度特性，发现孩器件在较大的温度范围内hFE具有很小的负温度系数．并对测量结果进行了分析讨论。     

Graphene/SiO2/p‐GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters

Advanced materials that combine novel functionality and ease of applicability are central to the development of light‐emitting diodes (LEDs), which is of ever increasing commercial importance. Here a new metal‐insulator‐semiconductor (MIS) LED structure that combines economical fabrication with novel device properties is reported. The presented MIS‐LED consists of a graphene electrode on p‐GaN substrate separated by an insulating SiO₂ layer. It is found that the MIS‐LED possesses a unique tunability of the electroluminescence spectra depending on the bias conditions. Tunnel injection from graphene into the p‐GaN can explain the difference in luminescence spectra under forward and reverse bias. The demonstrated MIS‐LED expands the use of graphene and also possibly allows the direct integration of light emitters with other circuit elements.     

Effect of illumination on the characteristics of a proposedhetero-MIS diode

A novel heterostructure metal-insulator-semiconductor (MIS) diode is proposed and studied theoretically to examine the effect of illumination on the characteristics of the device. The capacitance of the proposed structure has been calculated in the dark as well as in various illuminated conditions. It is found that the capacitance of the proposed MIS diode can be controlled by varying the incident light intensity. By incorporating the capacitor in the tuned circuit of an oscillator it will be possible to convert the intensity-modulated optical signal. The device is also expected to find useful application in optical CCDs for solid-state imaging and optical tuning     

Thermal resistance of MIS mesa varactors

The thermal resistance of MIS mesa varactors is calculated and measured. Results are given for varactors in a diode package as a function of device diameter. The measurement technique used is based on the temperature dependence of the inversion layer generation time.     

A lateral metal—insulator—p-Si tunnel transistor

We report the fabrication of a lateral MIS tunnel transistor whose emitter and collector are Al/SiO2/p-Si tunnel junctions. All processing is carried out at room temperature except for the growth of the passivating field oxide. The small signal common emitter current gain is 20. Two coupled gain mechanisms exist for such a lateral MIS tunnel transistor. The first mechanism relies on a high minority-carrier injection ratio of the emitter junction. Second, the minority carriers injected into the reverse-biased collector junction may produce additional gain through multiplication of majority-carrier current. Lateral MIS tunnel transistors on n-Si make use of the second mechanism. Our device takes advantage of the high minority-carrier injection ratio achievable with Al/SiO2/p-Si tunnel junctions.     

基于无线传感网络电力巡检系统

电力输电线巡检是电力安全生产的一个重要环节.目前的电力线巡检系统存在定位精度较低,自动化程度较低、耗费人力物力等问题.提出一种新的基于无线传感网络技术的电力线巡检系统.该系统将电力线巡检系统划分为三部分:杆塔线路信息采集系统,手持设备,和中心站管理信息系统.信息采集系统从各传感器节点收集信息,并使用无线网络将信息发送到手持设备,手持设备发送的信息中心站管理信息系统.最后讨论了该系统在电力线巡检的应用前景.     

Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAsmetal-insulator-semiconductor-like (MIS) structure for multiple-valuedlogic applications

A new GaAs-In_xGa_1-xAs metal-insulator-semiconductor-like (MIS) device with the interesting dual-route and multiple-negative-differential-resistance (MNDR) current-voltage (I-V) characteristics has been fabricated and demonstrated. These performances are caused by the successive barrier lowering and potential redistribution effect. A novel multiple-route I-V characteristic is obtained in the studied device at low temperature (-130°C). This performance is different from the previously reported NDR switching device and has not yet been found in other devices. The interesting property of the studied structure provides a promising candidate for switching device applications     

HgCdTe MIS器件制备及其C-V特性研究

通过在P-HgCdTe上生长阳极硫化膜和ZnS介质钝化层,制备出了性能较好的MIS器件,并通过对MIS器件C-V特性的分析,获得了ZnS/自身钝化膜/P-HgCdTe的界面特性.所测的界面电荷密度在1010～1011cm-2之间,平带电压在2 V以下.     

Development and research of MIS varicaps with charge transfer

A new type of a double-electrode MIS varicap with a carrier transfer has been proposed. It is shown that in a device of this type, there are no negative effects associated with the processes of thermal generation and accumulation of minority carriers. This makes it possible to increase the limiting frequency and improve the temperature stability of varicap operation. Two designs of the device are considered. The characteristics of the varicaps that were measured experimentally agree with the results of the calculations.     

MIS结构电容器的湿敏特性研究

在室温情况下,研究了MIS结构电容器的湿敏特性。用交流串联电路,测量其电流与相对湿度和频率的依赖关系,实验结果表明:此结构有良好的感湿灵敏度和短的响应时间。其中相对湿度从12%变化到98%时,在较宽频率范围(102~105Hz)内,元件的电流有较大的变化。还对器件的物理模型进行了分析。     

Optical characterization of diamond MIS capacitors

The transient photoresponse properties of diamond metal-insulator-semiconductor (MIS) capacitors have been characterized for the first time. Capacitors were fabricated on natural diamond using an electrochemical cleaning step with a CVD SiO₂ dielectric and an optional carbon implantation to create a nonuniform doping profile. Devices were found to function as integrating photodetectors and were evaluated by the spectral dependence of the transient photocapacitance (PC). We discuss a model that distinguishes between the responses due to inversion layer population and that due to bulk trap occupancy changes. Inversion charge generation was observed at all wavelengths investigated and it dominated the PC transient at photon energies above 3 eV. Possible reasons for this result are discussed and analyzed. We could not demonstrate a suitable way to use carbon implantation to form a surface n-type layer in a MIS device without degrading the device IV properties and eliminating the integrating photoresponse observed on non-implanted devices. These results suggest that diamond charge-storage devices can function only if the diamond surface is prepared properly before device fabrication     

A proposed model of MISS composed of two active devices

A model is proposed for MISS operation which explains the discrepancies in threshold voltage, switching current and the physical mechanism reported previously. A complete physical picture of the current-voltage characteristics of the device is given considering the coupled action of two devices; a bipolar transistor with open base and an amplifying MIS structure in non-equilibrium. An approximate value for holding voltage is given. Some experimental results supporting the suggested physical picture are reported showing the charge-storage effect anticipated by this model and a capacitive-current behaviour evidencing the existence of an internal positive feedback in the device.