改进型镁扩散法制备高临界电流密度MgB2超导体性能研究

本文采用一种改进型镁扩散法成功制备出密度达到1.95g/cm₃的MgB₂超导块材。论文研究了不同的热处理条件对MgB₂块材的超导转变温度(T_c)和临界电流密度(J_c)性能的影响。采用最佳热处理条件制备的MgB₂超导体T_c和J_c分别达到了38.1K和0.53MA/cm₂(10K,自场)。为了改进镁扩散法MgB₂超导体中弱的高场磁通钉扎性能,本文还研究了nano-Pr₆O₁₁和C掺杂对MgB₂超导体的临界电流密度和不可逆场(H_irr)的影响。结果表明C掺杂的MgB₂超导体临界电流密度在10K,6T下达到了10₄A/cm₂,该结果比未掺杂MgB₂超导体在同样条件下性能提高了两个量级,甚至比固态反应法制备的nano-C掺杂MgB₂超导体性能更好。利用该方法制备的nano-Pr₆O₁₁掺杂的MgB₂超导体在10K,2T下也比未掺杂样品J_c提高达9.4倍。根据大量的实验结果和理论分析我们提出基于改进型镁扩散法和化学掺杂,包括纳米粒子和C掺杂,很有可能是一种制备高性能MgB₂超导体非常有效的途径。     

不同包套石墨烯掺杂MgB2线材的超导性能研究

分别采用Fe和Nb作为阻隔层包套材料,通过原位粉末装管法工艺(in-situ PIT)制备出石墨烯掺杂的MgB₂/Fe(Nb)/Cu线材和Nb包套未掺杂的MgB₂单芯线材。在高纯氩气保护下、670~800 ℃保温2 h热处理线材。X-ray衍射显示,670 ℃热处理的线材主相均为MgB₂超导相,其中Fe包套线材的MgB₂相中含有Fe₂B杂相。三种线材的微观结构显示,未掺杂线材基体中的孔洞相对较大,而石墨烯掺杂的Fe、Nb包套线材晶粒之间的孔洞相对较小。线材样品的拉伸性能结果显示,热处理前由于加工硬化,三种线材的拉伸应变值远远低于热处理后的拉伸应变值,其中铁包套线材的硬化最为严重,但无论是否热处理,Fe包套样品的强度都是最大的。四引线法传输性能测试显示,670 ℃热处理Nb包套掺杂线材的临界电流密度(J_c)在4.2 k,2 T、4 T、6 T范围内均高于Fe包套掺杂线材的J_c,石墨烯掺杂线材(Nb、Fe包套)在2 T具有更好的传输性能,Nb包套掺杂线材的J_c最高可达到4.5×10₅A/cm₂。大于4 T后,两种包套的掺杂线材的J_c均低于未掺杂的线材,Fe包套样品的超导性能降低更大,显示其掺杂未全部进入晶格,导致在高场失去了磁通钉扎作用。     

Fe3O4/SiO2/Bi2WO6磁性复合光催化剂的制备及其光催化性能

钨酸铋(Bi₂WO₆),结构最简单的Aurivillius相化合物,是近期受到研究者关注的新型光催化材料。然而,光催化剂粉末在反应介质中难被回收,工业化应用成本较高。本文用三步方法合成了可回收的Fe₃O₄/SiO₂/Bi₂WO₆磁性复合光催化剂,通过溶剂热法合成具有磁性的Fe₃O₄,用溶胶凝胶法在Fe₃O₄表面覆盖SiO₂层,后将磁性颗粒与Bi₂WO₆纳米片相结合。光催化剂的形貌结构及性能通过XRD、SEM、PL、UV-vis进行表征测试。结果表明,直径约500 nm的Fe₃O₄微球附着在边长约500 nm的Bi₂WO₆纳米片的表面,SiO₂在两者之间起到了粘连作用。光催化剂Fe₃O₄/SiO₂/Bi₂WO₆对于罗丹明B的光降解活性较好,且有一定磁性,可以通过外加磁场将其从溶液中分离,有较大的应用潜力。     

La2O3掺杂氧化铝气凝胶的制备与耐温性能研究

以仲丁醇铝为前驱体,采用溶胶-凝胶法结合丙酮-苯胺原位生成水技术,通过乙醇超临界干燥,制备出不同含量(1.5 mol%~12 mol%)La₂O₃掺杂的氧化铝气凝胶。采用电子扫描电镜(SEM)、透射电子显微镜(TEM)、X线衍射仪(XRD)、N₂吸附分析仪等仪器表征了La₂O₃掺杂对氧化铝气凝胶的微结构和耐温性能的影响。结果表明：La₂O₃的引入使氧化铝气凝胶的形貌由球状颗粒向大的片状结构转变。适量的La₂O₃掺杂能提高氧化铝气凝胶的比表面积,9 mol% La₂O₃掺杂的氧化铝气凝胶比表面积最大。通过La₂O₃掺杂,能够抑制氧化铝晶粒在高温下的生长和α-Al₂O₃的相变,提高氧化铝气凝胶的耐温性能。1200℃热处理后,La₂O₃掺杂的氧化铝气凝胶仍维持在θ-Al₂O₃,比表面积为86.5 m₂/g,高于未掺杂的氧化铝气凝胶(46 m₂/g)。     

La2O3掺杂AgSnO2电接触材料的制备及性能研究

以Ag、Sn、La₂O₃粉为原料,采用机械合金法制备复合粉体。结合氧化法与粉末冶金工艺,对复合粉体进行氧化、压制、烧结。采用扫描电镜(SEM)和能谱仪、硬度计、金相显微镜、金属电导率测量仪等对复合粉体氧化前后的形貌以及电接触材料烧结前后的性能进行表征。结果表明：烧结后,电接触材料硬度较于烧结前明显下降。同时电接触材料随Sn含量增大,电阻率升高,密度反而下降。在一定的La₂O₃(0wt.%、0.75wt.%、1.5wt.%、2.25wt.%、3wt.%)含量范围内,La₂O₃掺杂量越高,密度越低。同时电接触材料经烧结后,随La₂O₃含量增加,其电阻率先降后升,在La₂O₃含量为0.75wt.%时,电接触材料的电阻率最低。     

Cr3+掺杂LiNi0.5Mn1.5O4材料的制备及性能研究

采用高温固相法合成了Cr₃₊掺杂的LiNi_0.5Mn_1.5O₄正极材料,研究了掺杂量对材料物理性能和电化学性能的影响。利用XRD、SEM对材料的结构和形貌进行了表征,结果显示样品具有棱边清晰的尖晶石形貌。讨论了不同Cr₃₊掺杂量对LiCr_xNi_0.5-0.5xMn_1.5-0.5xO₄(x=0,0.05,0.1,0.15,0.2)正极材料性能的影响。充放电测试、循环伏安和交流阻抗测试结果表明：当Cr₃₊的掺杂量为x=0.1时(LiCr_0.1Ni_0.45Mn_1.45O₄)正极材料的性能最好,0.1C、0.5C、1C、2C及5C的首次放电比容量依次为131.54mAh g_-1、126.84mAh g_-1、121.28mAh g_-1、116.49mAh g_-1和96.82mAh g_-1,1C倍率下循环50次,容量保持率仍为96.5%。     

SNDC/La2Mo2O9复合电解质材料的制备及性能表征

本文采用甘氨酸-硝酸盐法(GNP)和溶胶凝胶法分别合成了Sm_0.1Nd_0.1Ce_0.8O_1.9(SNDC) 和La₂Mo₂O₉(LAMOX)粉末,并用常压烧结的方法制备了不同比例的SNDC和LAMOX的复合材料,通过XRD和SEM等手段表征了不同复合比例样品的物相和表面形貌并测试了烧结样品的电导率。结果表明,复合样品的电导率在相变点前后随着复合量增加变化趋势相反,其中LAMOX含量为20mol%的样品在550℃时的电导率能达到0.01S/cm,高于同温度下SNDC电导率。     

MgB2线带材工艺及性能研究进展

MgB_2线带材的加工经历了近15年的研究与发展,生产出的线带材可以在制冷机、较低磁场下使用,另外生产MgB_2线带材的原材料相对低廉,应用前景十分广泛。本文从MgB_2传统线带材加工和后续工艺方法的优化出发,概述了MgB_2线带材研究的进展,详细介绍了内部镁扩散法,即用中心镁棒代替传统镁粉,使用铜镍材料为包套,钽或铌为阻隔层并与镁之间填充硼粉,热处理后得到致密的MgB_2相。论述了未来MgB_2线带材加工的研究重点。     

β-Ga2O3：B3+蓝色长余辉性能的研究

利用高温固相法制备了蓝色长余辉材料β-Ga₂O₃: B₃₊. β-Ga₂O₃: B₃₊在 260 nm紫外光辐照5分钟后,撤去紫外光,在380-600nm光谱范围内呈现宽带的蓝色余辉,余辉时间超过0.5小时。通过激发光谱,发射光谱,余辉衰减曲线,热释光谱等实验手段对样品进行表征。实验结果表明,B₃₊的掺入能够提高β-Ga₂O₃的发光性质。β-Ga₂O₃: 80% B₃₊的热释光谱表明B₃₊的掺入能够增加陷阱数目及陷阱深度。     

La2O3含量对搅拌摩擦加工制备Ni /Al复合材料组织和性能的影响

采用搅拌摩擦加工方法在Al基体中添加不同La₂O₃含量的混合粉末(Ni+La₂O₃),制备 (Ni+La₂O₃)/Al复合材料。采用SEM、EDS、 EPMA及XRD对复合区微观结构及相组成进行分析,采用室温拉伸试验对 (Ni+La₂O₃)/Al复合材料力学性能进行了测试。结果表明,随着La₂O₃含量的增加,(Ni+La₂O₃)/Al复合材料的组织和性能先变好后变差。当La₂O₃添加量达到5%时,复合材料中Al₃Ni增强颗粒分布均匀、颗粒数量最多,块状的Ni粉团聚减少,其抗拉强度达到最大值215MPa,相比Ni/Al复合材料(抗拉强度176MPa),其抗拉强度提高了22%;当La₂O₃的添加量为7%时,复合材料中Al₃Ni增强颗粒含量减少,块状Ni粉团聚重新出现,抗拉强度下降至201MPa。     

Enhanced superconducting properties of bulk MgB2 prepared by in situ Powder-In-Sealed-Tube method

A systematic study on the superconducting properties of polycrystalline MgB₂ synthesized by in situ Powder-In-Sealed-Tube technique is carried out at different temperatures (750–900 °C). Both XRD and SEM results show well-crystallized MgB₂ grains in all the samples and grain size is found to be increasing with the sintering temperature. Sharp superconducting transitions are observed for all samples, irrespective of sintering temperatures, which implies the high degree phase purity and homogeneity of MgB₂ formed, while J_C(H) plot gives sample dependent critical current density. The samples heat treated at relatively low temperatures show enhanced flux pinning and hence improved J_C(H) performance. The reduced grain size and hence increased density of grain boundary pinning centers of MgB₂ bulks synthesized at low temperature are mainly responsible for the enhanced flux pinning and J_C.     

Dielectric relaxation behaviors of pure and Pr6O11-doped CaCu3Ti4O12 ceramics in high temperature range

Pure and Pr₆O₁₁-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics were prepared by conventional solid-state reaction method. The compositions and structures were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The influences of Pr-ion concentration on dielectric properties of CCTO were measured in the ranges of 60 Hz-3 MHz and 290-490 K. The third phase of Ca₂CuO₃ was observed from the XRD of CCTO ceramics. From SEM, the grain size was decreased obviously with high valence Pr-ion (mixing valence of Pr³⁺ and Pr⁴⁺) substituting Ca²⁺. The room temperature dielectric constant of Pr-doped CCTO ceramics, sintered at 1323 K, was an order of magnitude lower than the pure CCTO ceramics due to the grain size decreasing and Schottky potential increasing. The dielectric spectra of Pr-doped CCTO were flatter than that of pure CCTO. The loss tangent of Pr-doped CCTO ceramics was less than 0.20 in 2 × 10²-10⁵ Hz region below 440 K. The complex impedance spectra of pure and Pr-doped CCTOs were fitted by ZView. From low to high frequency, three semicircles were observed corresponding to three different conducting regions: electrode interface, grain boundary and grain. By fitting the resistors R and capacitors C, the activation energies of grain boundary and electrode contact were calculated. All doped CCTOs showed higher activation energies of grain boundary and electrode than those of pure CCTO ceramics, which were concordant with the decreasing of dielectric constant after Pr₆O₁₁ doping.     

As-deformed filament's density and transport currents of MgB2/Ti/Glidcop wire

Filamentary MgB₂/Ti/Glidcop wire has been manufactured by in situ process using hydrostatic extrusion, cold drawing and finally subjected to high pressure and standard densifications. Filament density of as-deformed wires was evaluated by micro-hardness measurements and related to applied deformation. It was found that filament's density and uniformity in as-deformed wire have a strong effect on the critical current density (J_c) of annealed samples. The highest J_c was measured for the filaments densified by cold isostatic pressing with 2 GPa and also for rotary swaged ones showing the best uniformity. Presented results showed the importance of filament density and homogeneity and also demonstrate suitability of hydrostatic extrusion for uniform long-length filamentary MgB₂ wires production.     

Piezoelectric and dielectric properties of Dy2O3-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics

(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ + x wt% Dy₂O₃ with x = 0-0.3 ceramics were synthesized by conventional solid-state processes. The effects of Dy₂O₃ on the microstructure, the piezoelectric and dielectric properties were investigated. X-ray diffraction pattern confirmed that the coexistence of tetragonal and rhombohedral phases in the (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ composition was not changed by adding 0.05-0.3 wt% Dy₂O₃. SEM images indicate that all the ceramics have pore-free microstructures with high density, and that doping of Dy₂O₃ inhibits the grain growth of the ceramics. The addition of Dy₂O₃ shows the double effects on decreasing the piezoelectric and dielectric properties for 0 < x < 0.15 when Dy³⁺ ions substitute B-site Ti⁴⁺ ions, and increasing the properties for 0.15 < x < 0.3 when Dy³⁺ ions enters into A-site of the perovskite structure. The optimum electric properties of piezoelectric constant d₃₃ = 170 pC/N and the dielectric constant ?_r = 1900 (at a frequency of 1 kHz) are obtained at x = 0.3.     

原位粉末装管法37芯MgB2线材的制备及性能研究

传统的Cu包套原位粉末装管法(in situ PIT)制备多芯MgB₂超导线材时,易于出现断芯、断线现象。针对一问题,本实验中以强度较高的梦乃尔合金(Monel 400)作为包套材料,以旋锻、拉拔、轧制及中间热处理相结合的加工手段成功的制备出直径Φ1.0 mm、37芯结构的多芯MgB₂超导长线材。微观结构分析表明多芯线材中MgB₂芯丝及替换芯丝等亚组元的分布较为规整,阻隔层未出现明显破损现象,最终线材中MgB₂超导芯丝的平均直径约80 μm。室温拉伸性能显示热处理前MgB₂线材的屈服强度为759 MPa,热处理后的线材为248 MPa。4.2 K、4 T下,线材的临界电流密度J_c达到2.31×10^₅ A.cm^_-2,工程临界电流密度达到3.16×10^₄ A.cm^_-2。     

Optical floating zone method growth and photoluminescence property of MgNb2O6 crystal

MgNb₂O₆ single crystals are grown by the optical floating zone method. The as-grown crystals are dark brown and have dimensions of Ø 4-6 mm × L 87 mm, with the largest crystal domain being Ø 5 mm × L 32 mm. After being annealed, the crystals fade to light brown. The powder X-ray diffraction analysis shows that the crystals have a columbite-type MgNb₂O₆ structure. The crystal grows along the c-axis and the cleavage plane is the (0 1 0) plane. Transmission polarized light microscopy measurements show that the crystal is free of low-angle grain boundaries and inclusions. The crystals have been characterized by Raman scattering, which reveals the change of Nb-O band in annealed and non-annealed samples. The photoluminescence spectra exhibit a broad and strong blue emission band centered at 435 nm.     

La2O3含量对Al2O3/Cu基复合材料组织与性能的影响

以La₂O₃粉、Al粉、CuO粉为反应物原料、纯铜为基体,采用原位合成技术和近熔点铸造法制备颗粒增强Cu基复合材料,研究La₂O₃对Al-CuO体系制备的Cu基复合材料组织及性能的影响。结果表明：添加La₂O₃可获得纳米Al₂O₃颗粒,且弥散分布于Cu基体中,制备的材料组织更加细小、均匀,其材料的电导率及摩擦磨损性能明显提高。当添加0.6%wtLa₂O₃,复合材料的电导率达到90.2%IACS,磨损量达到最小,相比未添加La₂O₃,其导电率提高10.1%,磨损量减小36.6%。     

Production of MgB2 superconducting coatings by electrophoresis on metal substrates

Production of MgB₂ coatings on various metallic substrates was achieved by means of the direct electrophoretic deposition technique. An inexpensive simple heat treatment in evacuated quartz tubes was developed as an alternative to inert gas flow during the process. The films were characterized by XRD, SEM and SQUID. It resulted that the procedure led to the production of uniform, dense and well-adhesive superconducting films. Stainless steel proved to be the best substrate among the investigated metals.